• Title/Summary/Keyword: epitaxial C49-TiSi$_2$

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Thermal Behavior and Crystallographic Characteristics of an Epitaxial C49-$TiSi_2$ Phase Formed in the Si (001) Substrate by $N_2$Treatment (Si (001) 기판에서 $N_2$처리에 의해 형성된 에피택셜 C49-$TiSi_2$상의 열적 거동과 결정학적 특성에 관한 연구)

  • Yang, Jun-Mo;Lee, Wan-Gyu;Park, Tae-Soo;Lee, Tae-Kwon;Kim, Joong-Jung;Kim, Weon;Kim, Ho-Joung;Park, Ju-Chul;Lee, Soun-Young
    • Korean Journal of Materials Research
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    • v.11 no.2
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    • pp.88-93
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    • 2001

  • The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

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In situ Epitaxial Growth of the $TiSi_2$ on si(111)-7$\times$7 Substrate by Codeposition (동시증착에 의한 Si(111)-7$\times$7 기판 위에 $TiSi_2$ 에피택셜 성장)

  • 최치규;류재연;오상식;염병렬;박형호;조경익;이정용;김건호
    • Journal of the Korean Vacuum Society
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    • v.3 no.4
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    • pp.405-413
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    • 1994

  • 초고진공에서 기판 Si(111)-7$\times$7 위에 Ti:Si 또는 1:2의 조성비로 Ti와 Si을 동시증착한 후 in situ 열처리하여 TiSi2 박막을 에피택셜 성장시켰다 XRD와 XPS 분석결과 동시증착된 혼합 층에서 C49-TiSi2 박막의 성장은 핵형성에 의함을 확인하였으며 양질의 C49-TiSi2 박막은 Ti를 증착한후 Ti와 Si를 동시 증착한 (Ti+2Si)/(Ti)/Si(111)-7$\times$7구조의 시료를 초고진공에서 50$0^{\circ}C$에서 열처리하여 얻을수 있었다. 형성된 C49-TiSi2/Si(111)의 계면은 깨끗하였고 HRTEM 분석 결과 C49-TiSi2\ulcornerSi(111)의 계면은 약 10。 의 편의를 가지면서 TiSi2[211]∥Si[110] TiSi2(031)/Si(111) 의 정합성을 가졌으며 시료의 전 영 역에 에피택셜 성장되었다.

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Phase stability and epitaxy of C49 $TiSi_2$ on Si(111) (C49 $TiSi_2$상의 에피구조 및 상안정성)

  • Jeon, Hyeong-Tak;Nemanich, R.J.
    • Korean Journal of Materials Research
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    • v.4 no.2
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    • pp.136-142
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    • 1994

  • Epitaxial TiSiz films have been grown by UHV deposition of Ti on atomically clean Si(ll1)- orientated substrates. The Ti film of 50$\AA$ was deposited on the reconstructed Si(ll1) surface at room temperature. The sample was annealed up to $800^{\circ}C$ in $100^{\circ}C$ increments. The structure of the TiSiL films have been identified as the C49 metastable phase by electron diffraction patterns. Scanning electron microscopy( SEM) shows three different types of Tiksilicide island morphologies. The individual island structures are single crystal and are considered to be epitaxy with different crystallographic orientations. The orientational relationships of the $TiSi_{2}$ islands is given by [ 172 1 C49 $TiSi_{2}$//[110] Si and (021) C49 $TiSi_{2}$// (111)Si.

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