• Ocean Systems Engineering
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• v.14 no.2
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• pp.171-210
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• 2024

This paper focuses on the rigorous and holistic fatigue analysis of mooring chains for a deep draft semi-submersible platform in the challenging environment of the central Gulf of Mexico (GoM). Known for severe hurricanes and strong loop/eddy currents, this region significantly impacts offshore structures and their mooring systems, necessitating robust designs capable of withstanding extreme wind, wave and current conditions. Wave scatter and current bin diagrams are utilized to assess the probabilistic distribution of waves and currents, crucial for calculating mooring chain fatigue. The study evaluates the effects of Vortex Induced Motion (VIM), Out-of-Plane-Bending (OPB), and In-Plane-Bending (IPB) on mooring fatigue, alongside extreme single events such as 100-year hurricanes and loop/eddy currents including ramp-up and ramp-down phases, to ensure resilient mooring design. A detailed case study of a deep draft semi-submersible platform with 16 semi-taut moorings in 2,500 meters of water depth in the central GoM provides insights into the relative contributions of wave scatter diagram, VIMs from current bin diagram, the combined stresses of OPB/IPB/TT and extreme single events. By comparing these factors, the study aims to enhance understanding and optimize mooring system design for safety, reliability, and cost-effectiveness in offshore operations within the central GoM. The paper addresses a research gap by proposing a holistic approach that integrates findings from various contributions to advance current practices in mooring design. It presents a comprehensive framework for fatigue analysis and design optimization of mooring systems in the central GoM, emphasizing the critical importance of considering environmental conditions, OPB/IPB moments, and extreme single events to ensure the safety and reliability of mooring systems for offshore platforms.

• Journal of Radiation Industry
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• v.18 no.1
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• pp.15-21
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• 2024

The Non-Proliferation Treaty (NPT) is the basis of global efforts to prevent the spread of nuclear weapons. In Republic of Korea, safety measures are integrated with NPT approval through agreements with the International Atomic Energy Agency (IAEA) and the Safeguards Agreement. In contrast, Democratic People's Republic of Korea (DPRK), initially an NPT member, withdrew, refusing IAEA nuclear inspections. This inhibits the precise management of DPRK's nuclear facilities and limits access to related information. The Korean Peninsula, politically divided, sees DPRK in control of nuclear weapons. Although the IAEA periodically evaluates DPRK's nuclear facilities, there's a research gap in contamination and site management with nuclear activities. Recognizing the presence or absence of such activities is crucial for peaceful nuclear endeavors. This proposal suggests the number and locations for environmental sample collection using the Visual Sample Plan (VSP) software for nuclear activity analysis. VSP software is sample collection locations and quantities through statistical tests on collected data, ensuring reliability for decision-making. The proposal identifies sites and facilities for nuclear activity analysis based on IAEA safety reports, utilizing the software's embedded methods. Suggested sampling locations for undisclosed nuclear activities employ VSP's embedded techniques, including 'Show that at least some high % of the sampling area is acceptable' to confirm contamination and 'Estimate the Mean' to evaluate the average contamination level.

• Journal of the Korean Physical Society
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• v.80
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• pp.1-12
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• 2022

Over the past few decades, tetrafluoroethane (TFE, R134a Freon)-based gases have been widely used in the operation of phenolic resistive plate chambers (RPCs) in many high-energy experiments. However, TFE has a high global warming potential (GWP); therefore, a search for new eco-friendly gases to replace traditional TFE-based ones is now unavoidable. In this research, we present cosmic-ray test results of a prototype RPC for the SHiP (search for hidden particles) experiment using 1.6- and 1.4-mm-thick RPC electrodes containing mixtures of various gases, including 1,3,3,3-tetrafluoropropene (HFO1234ze), CO₂, iC₄H₁₀ and SF₆. We compare the performance data gathered with these new gas mixtures with those gathered with a traditional TFE-based gas used for RPCs in compact muon solenoid (CMS) and a toroidal LHC apparatus (ATLAS) experiments. The addition of CO₂ to the HFO1234ze-based gas was found to be fairly effective in reducing the working-point high voltage (HVWP) for RPC operation. The results of our experiments lead us to the conclusion that adding 40% CO₂ or less, when combined with HFO1234ze-based gas, is conducive to reliable detector performance for SHiP single-gap phenolic RPCs.

• Korean Journal of Agricultural Science
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• v.49 no.4
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• pp.823-835
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• 2022

In this study, the feasibility of alternative tractor Roll Over Protective Structure (ROPS) designed to evaluate conditions required for testing was confirmed. In accordance with Organization for Economic Cooperation and Development (OECD) code 4, the required load energy of the tractor ROPS was determined. First, the tractor ROPS test was performed and a repeated test was performed using a simplified ROPS as an alternative tractor ROPS. The test procedure is first rearward, second lateral, and last forward based on ROPS. The load test device consists of a load cell that measures force and a LVDT that measures deformation. Precision was confirmed by calculating the relative standard deviation of the simplified ROPS repeated test. Accuracy was analyzed by calculating the mean relative error between the mean measured values in the simplified ROPS test and the tractor ROPS test. As a result, the relative standard deviation was less than 2.5% for force and 3.3% for maximum deformation overall, showed the highest precision in lateral load. The mean relative error value for force measured at the lateral load of simplified ROPS was 0.5%, showing the highest accuracy. In the front load test, the mean relative error of maximum deformation was 20.5%, showing the lowest accuracy. The mean relative error (MRE) was high in the forward load test was because of structural factors of the ROPS. The simplified ROPS model is expected to save money and time spent preparing tractors.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.99-104
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• 2011

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. The crystal structure of these compounds has a rhombohedral structure with lattice constants $a_0=3.953\;{\AA}$, $c_0=38.890\;{\AA}$. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of $MgGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method were $6.21{\times}10^{18}\;cm^{-3}$ and 248 $cm^2/v{\cdot}s$ at 293 K, respectively. The optical absorption of $MgGa_2Se_4$ single crystal thin films was investigated in the temperature range from 10 K to 293 K. The temperature dependence of the optical energy gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's equation, $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$ and ${\beta}=251\;K$, respectively.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.42-49
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• 2011

We deposited $SiN_x$ thin films by using PECVD technique at $200^{\circ}C$ with various flow ratios of the $SiH_4/N_2$ gases. The photoluminescence measurements revealed that the maximum emission wavelength shifted to long wavelength as the ratio increased, however, positions of the several peak wavelengths, such as 1.9, 2.2, 2.4, and 3.1 eV, were independent on the ratio. Changes of the photoluminescence spectra were measured in the $N_{2}-$, $H_{2}-$, and $O_2$-annealed films. The luminescence intensities increased after the annealing process. In particular, the maximum emission wavelength shifted to short wavelength after $H_{2}-$ or $O_2$-annealing. But there were still several peaks on the spectra of all annealed films, several peak positions remained to be unchanged after the annealing. As for the light emission mechanism, we have considered the defect states of the Si- and N- dangling bonds in the $SiN_x$ energy gap, so that the energy transitions from/to the conduction/valence bands and the defect states in the gap were attributed to the light emission in the $SiN_x$ films. The experimental results point to the possibility of a Si-based light emission materials for flexible Si-based electro-optic devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.113-117
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• 2016

Recently, hydrogen is regarded as important energy in the future, because it is clean and renewable. The photoelectrochemical (PEC) system, which produce hydrogen using water splitting by solar energy, is one of the most promising energy systems because it has abundant energy sources and good theoretical efficiency. GaN has recently been regarded as suitable photoelectrode that could be used to split water to generate hydrogen without extra bias because its band edge position include water redox potential ($V_{redox}=1.23$ vs. SHE). GaN also shows considerable corrosion resistance in aqueous solutions and it is possible to control its properties, such as structure, band gap, and catalyst characteristics, in order to improve solar energy conversion efficiency. But, even if the band edge position of GaN make PEC reaction facilitate without bias, the overpotential of oxygen evolution reaction could reduce the efficiency of system. One of the ways to decrease overpotential is introduction of co-catalyst on photoelectrode. In this paper, we will investigate the effect of manganese dioxide ($MnO_2$) as a co-catalyst. $MnO_2$ particles were dispersed on GaN photoelectrode by spincoater and analyzed properties of the PEC system using potentiostat (PARSTAT4000). After coating $MnO_2$, the flat-band potential ($V_{fb}$) and the onset voltage ($V_{onset}$) were moved negatively by 0.195 V and 0.116 V, respectively. The photocurrent density increased on $MnO_2$ coated sample and time dependence was also improved. These results showed $MnO_2$ has an effect as a co-catalyst and it would enhance the efficiency of overall PEC system.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.89.1-89.1
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• 2010

Since Gratzel and co-workers developed a new type of solar cell based on the nanocrystalline $TiO_2$ electrode, dye-sensitized solar cells (DSSCs) have attracted considerable attention on account of their high solar energy-to-conversion efficiencies (11%), their easy manufacturing process with low cost production compared to conventional p-n junction solar cells. The mechanism of DSSC is based on the injection of electrons from the photoexcited dye into the conduction band of nanocrystalline $TiO_2$. The oxidized dye is reduced by the hole injection process from either the hole counter or electrolyte. Thus, the electronic structures, such as HOMO, LUMO, and HOMO-LUMO gap, of dye molecule in DSSC are deeply related to the electron transfer by photoexcitation and redox potential. To date, high performance and good stability of DSSC based on Ru-dyes as a photosensitizer had been widely addressed in the literatures. DSSC with Ru-bipyridyl complexes (N3 and N719), and the black ruthenium dye have achieved power conversion efficiencies up to 11.2% and 10.4%, respectively. However, the Ru-dyes are facing the problem of manufacturing costs and environmental issues. In order to obtain even cheaper photosensitizers for DSSC, metal-free organic photosensitizers are strongly desired. Metal-free organic dyes offer superior molar extinction coefficients, low cost, and a diversity of molecular structures, compared to conventional Ru-dyes. Recently, novel photosensitizers such as coumarin, merocyanine, cyanine, indoline, hemicyanine, triphenylamine, dialkylaniline, bis(dimethylfluorenyl)-aminophenyl, phenothiazine, tetrahydroquinoline, and carbazole based dyes have achieved solar-to-electrical power conversion efficiencies up to 5-9%. On the other hand, organic dye molecules have large ${\pi}$-conjugated planner structures which would bring out strong molecular stacking in their solid-state and poor solubility in their media. It was well known that the molecular stacking of organic dyes could reduce the electron transfer pathway in opto-electronic devices, significantly. In this paper, we have studied on synthesis and characterization of dendritic organic dyes with different number of electron acceptor/anchoring moieties in the end of dendrimer. The photovoltaic performances and the incident photon-to-current (IPCE) of these dyes were measured to evaluate the effects of the dendritic strucuture on the open-circuit voltage and the short-circuit current.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.107-112
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• 2010

The Cu$(In_{1-x}Ga_x)Se_2$ is the absorber material for thin film solar cell with high absorption coefficient of $1{\times}10^5cm^{-1}$. In the case of CIGS, the movable energy band gap from $CuInSe_2$ (1.00 eV) to $CuGaSe_2$ (1.68 eV) can be acquired while controlling Ga contain ratio. Generally, the co-evaporator method have used for development and fabrication of the CIGS absorption layer. However, this method should need many steps and lengthy deposition time with high temperature. For these reasons, in this paper, a new growth method of CIGS layer was attempted to hydride vapor transport (HVT) method. The CIGS mixed-source material reacted for HCl gas in the source zone was deposited on the substrate after transporting to growth zone. c-plane $Al_2O_3$ and undoped GaN were used as substrates for growth. The characteristics of grown samples were measured from SEM and EDS.