• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.135-142
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• 2001

Recently, plastic optical fiber draws a lot of attention as a new transmission medium for local area network (LAN) and home network applications. As PMMA based GI-POF (Graded Index Plastic Optical Fiber) has very low loss at about 500 nm and 650 nm wavelengths, it is very important to have a compact ultra short optical pulse source at these wavelength windows. In this paper, we have investigated detailed characteristics of gain switched laser system by using a commercially available low cost RF devices and an InGaAlP Fabry Perot semiconductor laser operating at 650 nm wavelength. The shortest optical 'pulse obtained was 33 psec with 1 GHz repetition rate. Depending on the DC bias current and the modulation frequency, the FWHM and the pulse energy of the gain switched pulses show 33.3-82.8 psec and 0.97-9.69 pI respectively. Also, the spectral bandwidths for CW and gain switched operations are 0.44 nm and 1.50 nm. We believe that these results are quite useful for high bit rate optical transmission applications with PMMA based plastic optical fibers in addition to estimate properties of ultra fast optical components and electro-optic devices. vices.

• Journal of IKEEE
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• v.26 no.3
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• pp.515-519
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• 2022

In this paper, we propose the development of a high-sensitivity entry-level nuclide analysis module. The proposed measurement sensor module consists of an electronic driving circuit for nuclide analysis resolution, prototype production with nuclide analysis function, and GUI development applied to prototypes. The electronic part driving circuit for nuclide analysis resolution is divided into nuclide analysis resolution process by the electronic part driving circuit block diagram, MCU circuit design used for radiation measurement, and PC program design for Spectrum acquisition. Prototyping with nuclide analysis function is made by adding a 128×128 pixel OLED display, three buttons for operation, a Li-ion battery, and a USB-C type port for charging the battery. The GUI development department applied to the prototype develops the screen composition such as the current time, elapsed measurement time, total count, and nuclide Spectrum. To evaluate the performance of the proposed measurement sensor module, an expert witness test was conducted. As a result of the test, it was confirmed that the calculated result by applying the resolution formula to the Spectrum (FWHM@662keV) obtained using the Cs-137 standard source in the nuclide analysis device had a resolution of 17.77%. Therefore, it was confirmed that the nuclide analysis resolution method proposed in this paper produces improved performance while being cheaper than the existing commercial nuclide analysis module.

• Applied Chemistry for Engineering
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• v.33 no.1
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• pp.58-63
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• 2022

Graphite has been used as an anode material for lithium-ion batteries for the past 30 years due to its low de-/lithiation voltage, high theoretical capacity of 372 mAh/g, low price, and long life properties. Recently, all-solid-state lithium-ion batteries (ASSLB), which are composed of inorganic solid materials with high stability, have received great attention as electric vehicles and next-generation energy storage devices, but research works on graphite that works well for ASSLB systems are insufficient. Therefore, we induced the performance improvement of ASSLB anode electrode graphite material by removing the amorphous carbon present in the carbon material surface, acting as a resistive layer from the graphite. As a result of X-ray diffraction (XRD) analysis using heat treated graphite in air at 400, 500, and 600 ℃, the full width at half maximum (FWHM) at (002) peak was reduced compared to that of bare graphite, indicating that the crystallinity of graphite was improved after heat treatment. In addition, the discharge capacity, initial coulombic efficiency (ICE) and cycle stability increased as the crystallinity of graphite increased after heat treatment. In the case of graphite annealed in air at 500 ℃, the high capacity retention rate of 331.1 mAh/g and ICE of 86.2% and capacity retention of 92.7% after 10-cycle measurement were shown.

• Korean Journal of Radiology
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• v.24 no.10
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• pp.1006-1016
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• 2023

Objective: Computed tomography (CT) is an established method for the diagnosis, staging, and treatment of multiple myeloma. Here, we investigated the potential of photon-counting detector computed tomography (PCD-CT) in terms of image quality, diagnostic confidence, and radiation dose compared with energy-integrating detector CT (EID-CT). Materials and Methods: In this prospective study, patients with known multiple myeloma underwent clinically indicated whole-body PCD-CT. The image quality of PCD-CT was assessed qualitatively by three independent radiologists for overall image quality, edge sharpness, image noise, lesion conspicuity, and diagnostic confidence using a 5-point Likert scale (5 = excellent), and quantitatively for signal homogeneity using the coefficient of variation (CV) of Hounsfield Units (HU) values and modulation transfer function (MTF) via the full width at half maximum (FWHM) in the frequency space. The results were compared with those of the current clinical standard EID-CT protocols as controls. Additionally, the radiation dose (CTDIvol) was determined. Results: We enrolled 35 patients with multiple myeloma (mean age 69.8 ± 9.1 years; 18 [51%] males). Qualitative image analysis revealed superior scores (median [interquartile range]) for PCD-CT regarding overall image quality (4.0 [4.0-5.0] vs. 4.0 [3.0-4.0]), edge sharpness (4.0 [4.0-5.0] vs. 4.0 [3.0-4.0]), image noise (4.0 [4.0-4.0] vs. 3.0 [3.0-4.0]), lesion conspicuity (4.0 [4.0-5.0] vs. 4.0 [3.0-4.0]), and diagnostic confidence (4.0 [4.0-5.0] vs. 4.0 [3.0-4.0]) compared with EID-CT (P ≤ 0.004). In quantitative image analyses, PCD-CT compared with EID-CT revealed a substantially lower FWHM (2.89 vs. 25.68 cy/pixel) and a significantly more homogeneous signal (mean CV ± standard deviation [SD], 0.99 ± 0.65 vs. 1.66 ± 0.5; P < 0.001) at a significantly lower radiation dose (mean CTDIvol ± SD, 3.33 ± 0.82 vs. 7.19 ± 3.57 mGy; P < 0.001). Conclusion: Whole-body PCD-CT provides significantly higher subjective and objective image quality at significantly reduced radiation doses than the current clinical standard EID-CT protocols, along with readily available multi-spectral data, facilitating the potential for further advanced post-processing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.445-454
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• 2001

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect fby van der Pauw method are 9.62x10$^{16}$ cm$^{-3}$ , 296$\textrm{cm}^2$/V.s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film we have found that he values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 7meV and 5.9meV, respectivity. by Haynes rule, an activation energy of impurity was 50 meV.

• Journal of the Korean Society of Industry Convergence
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• v.6 no.1
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• pp.81-86
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• 2003

For the simultaneous removal of $SO_2$/NOx from an iron-ore sintering plant, industrial plasma experiments have been conducted with a flue gas flow rate of $5,000Nm^3/hr$. The maximum 40kW power using the magnetic pulse compression (MPC) system generates a peak value of 100-150kV pulse voltage with its risetime of 200nsec and full width at half maximum (FWHM) of 500nsec, and with a frequency <300Hz. The plasma reactor module adopts a wire-plate structure with a gap of 200-400mm ID between plates. Initial concentrations of $SO_2$ and NOx were around 100-150ppm, respectively in the presence of 15% $O_2$ and <10% $H_2O$. Various reaction parameters such as specific energy ($Whr/Nm^3$), $NH_3$ injection with corona discharge, flow rate and injection of hydrocarbons were investigated for $SO_2$/NOx removal characteristics. About 90/65% of $SO_2$/NOx were simultaneously removed with a specific energy of $3.0Whr/Nm^3$ when both $NH_3$ and hydrocarbons were injected. Practical implications that the pilot-scale plasma results provide are further discussed.

• Progress in Superconductivity
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• v.5 no.1
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• pp.70-74
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• 2003

We fabricated cube textured Ni substrate for YBCO coated conductor and evaluated the effects of processing parameters on microstructural evolution and texture formation. Ni-rods as an initial specimen were prepared by two different methods, i.e., powder metallurgy(PM) and plasma arc melting(PAM). Subsequently, the rods were cold rolled to 100 $\mu\textrm{m}$ thick substrate and annealed at temperatures of $700∼1200^{\circ}C$. The texture of the substrate was characterized by pole-figure. It was observed that the texture of substrate made by P/M did not significantly varied with annealing temperature of 600∼$l100^{\circ}C$ and the full-width at half-maximums (FWHM) of both in-plane and out-of-plane were 9$^{\circ}$∼$10^{\circ}$. On the other hand, the texture of substrate made by PAM was more dependent on the annealing temperature and the corresponding values were $9^{\circ}$ ∼$13^{\circ}$ at the temperature range. In addition, recrystallization twin texture, (221)＜221＞, was formed as the temperature increased further. OM profiles showed that the grain size of substrate made by P/M was smaller than that made by PAM and this difference was correlated to the microstructure of initial specimens.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.125-126
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• 2006

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$. $345cm^2/V{\cdot}s$ at 293 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ},X$) having very strong peak intensity. Then. the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule. an activation energy of impurity was 137 meV.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2170-2174
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• 2010

The surfaces of $TiO_2$ and ZnO nanoparticles have been modified by gold (Au) nanoparticles by a reduction method in solution. Their interfacial electronic structures and optical absorptions have been studied by depth-profiling X-ray photoelectron spectroscopy (XPS) and UV-vis absorption spectroscopy, respectively. Upon Au-modification, UV-vis absorption spectra reveal a broad surface plasmon peak at around 500 nm. For the as-prepared Au-modified $TiO_2$ and ZnO, the Au $4f_{7/2}$ XPS peaks exhibit at 83.7 and 83.9 eV, respectively. These are due to a charge transfer effect from the metal oxide support to the Au. For $TiO_2$, the larger binding energy shift from that (84.0 eV) of bulk Au could indicate that Au-modification site of $TiO_2$ is different from that of ZnO. On the basis of the XPS data with sputtering depth, we conclude that cationic (1+ and 3+) Au species, plausibly $Au(OH)_x$ (x = 1-3), commonly form mainly at the Au-$TiO_2$ and Au-ZnO interfaces. With $Ar^+$ ion sputtering, the oxidation state of Ti dramatically changes from 4+ to 3+ and 2+ while that (2+) of Zn shows no discernible change based on the binding energy position and the full-width at half maximum (FWHM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the $ZnGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $ZnGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnGa_{2}Se_{4}$ single crystal trun films measured from Hall effect by van der Pauw method are $9.63{\times}10^{17}cm^{-3}$, $296cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c axis of the $ZnGa_{2}Se_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 251.9 meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on $ZnGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton $(A^{0},X)$ having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.