• JSTS:Journal of Semiconductor Technology and Science
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• 제15권1호
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• pp.114-121
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• 2015

In conventional LEDs, a mesa-structure is usually used and it causes the current to be overcrowded in a specific region. We propose a novel structure of GaN-based LED to overcome this problem. In order to distribute the current in an active region, a spreading pad is inserted at the p-type region in the GaN based LED device. The inserted spreading pad helps the current flow because it is more conductive than the p-type GaN layer. By performing electrical and optical simulations, the effects of the spreading pad insertion are confirmed. The results of electrical simulation show that the current spreads more uniformly and more radiative recombination is produced as well. Moreover, from the optical simulation, it is revealed that the ITO is less absorptive material than p-GaN if the condition of specific wavelength sources is satisfied. Considering all of the results, we can conclude that the luminescent power is enhanced by the spreading pad.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1438-1439
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• 2011

In this paper, we studied effects on the efficiency, according to thickness of the electron injection layer(EIL) for improving efficiency of Organic Light Emitting Diodes(OLEDs). For the first time, after confirming the optimum thickness of the EIL material $Cs_2CO_3$, we designed OLED devices having a structure of ITO/TPD/$Alq_3/Cs_2CO_3$/Al. And we manufactured devices applying for the optimum thickness of the material in the simulation with thermal evaporating method. And we investigated how the EIL material $Cs_2CO_3$ effects on efficiency of OLEDs in the EIL. As the result, because the EIL material $Cs_2CO_3$ reduces energy potential barrier of the EIL, it facilitated the electron transfer. And, as blocking the hole transfer contributes to an increased recombination, we confirmed that the efficiency of OLEDs increased. And compared to the device without using the EIL material, the device using thickness 1.0 nm of $Cs_2CO_3$ in the EIL shows the excellent efficiency. Therefore, we confirmed that the luminance and the external quantum efficiency increase about 600% and 500% respectively.

• 한국응용과학기술학회지
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• 제17권1호
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• pp.63-66
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• 2000

Organic Electroluminescent devices(OELD) consisted of multilayer structures have been studied for the application the application to flat-panel display. Metal-chelate complexes, zinc bis(2-(2-hydroxyphenyl)benzoxazolate) ($Zn(BOX)_{2}$) and zinc bis(2-(2-hydroxyphenyl)benzothiazolate) ($Zn(BOX)_{2}$), have been intensively investigated as an white-light emitting layer and recognized to have good electroluminescent(EL) properties. In this study, ($Zn(BOX)_{2}$) and ($Zn(BTZ)_{2}$) were synthesized and characterized by FT-IR, $^{1}H-NMR$, UV-VIS and PL. Their EL properties were also studied and their ionization potential(IP) and electron affinity(EA) were also measured by cyclic voltammetry(CV).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.53-56
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.68-72
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• 2008

AlGaInP high-brightness LEDs(HB-LEDs) have gained importance a variety of application operating in the red, orange, yellow and yellow-green wavelength. The light generated from inside LED chips should be emitted to the air through the surfaces of the chips. However, because of the differences between the semiconductor and air or epoxy's refractive index, some of the light was blocked so that caused lowering external quantum efficiency. In this study, nano-scale roughness on the top-GaP layer of AlGaInP epitaxial wafer was fabricated to improve' the brightness of AlGaInP LEDs. Nano-scale roughness was made by ICP dry etcher. Our AlGaInP LEDs with nano-scale roughness has higher brightness (about 28.5 %) than standard AlGaInP LEDs.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.60.1-60.1
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• 2011

비정질 indium-gallium-zinc-oxide (a-IGZO)는 thin film transistor (TFT)에 적용되는 대표적인 active layer로써 높은 이동도를 갖고, 도핑 농도의 제어가 용이하며 낮은 온도에서도 대면적에 증착할 수 있는 특성을 가지고 있다. 특히 저온에서 대면적 증착이 가능한 장점을 갖고 있어 LCD 분야뿐만 아니라 다양한 분야에서 상용화하려는 연구가 시도되고 있다. a-IGZO를 구성하는 물질 중에 이동도에 중요한 역할을 미치는 In은 대표적인 투명전극물질인 indium-tin oxide (ITO)에서 고전류 구동에 의한 확산이 널리 알려져 이에 대한 증명과 개선을 위한 연구가 진행되고 있다. 보고된 결과에 따르면 device에 지속적인 구동 전압을 가했을 때 In이 유기층로 확산되어 organic light emitting diode(OLED)의 성능을 저하시키는 것으로 알려져 있다. 따라서, a-IGZO에서도 고전류 구동에 의한 indium의 이동이 필수불가결하다고 판단된다. 본 연구에서는 a-IGZO TFT에 고전압 구동을 반복적으로 시행함으로써 발생하는 전기적 특성의 변화를 확인하였고, 동일한 소자의 전극과 채널 사이의 계면에서 In 분포를 energy dispersive spectrometer (EDS)로 관찰하여 In 분포와 전기적 특성 간의 상관관계에 대해 연구하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1638-1641
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• 2008

We have investigated the effectiveness of a gravure printing method for the fabrication of organic light-emitting diode (OLED) and Organic Thin Film Transistor (OTFT). Printing of the organic layers was performed with a small-scale gravure coating machine, while the metallic layers were vacuum-evaporated. Devices with gravure-printed layers are at least comparable with the spin-coated devices. Effects of the solvent formulation and surface energy mismatch between the organic layer materials on the printed patterns and device performance were discussed. We will present the initial design and experimental data of OTFT fabricated by roll-type soft contact transfer process.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.920-923
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• 2003

We fabricated composite materials as a pellet structure with the various kinds of inorganic material powder. The composite materials were deposited onto the plastic film by the electron beam evaporation and water vapor transmission rates (WVTRs) were measured by the MOCON facility. As a result of WVTRs, the composite materials had lower WVTR value than any other inorganic materials. So, these films were proposed to protect the organic light emitting device (OLED) from moisture and oxygen. We can consider that the composite thin-film is one of the more suitable candidates for the thin-film passivation layer in the OLED. And, we are processing the XRD, XPS and EPMA to analyze the property of the composite material. We will also analyze properties of the current-voltage and luminescence for lifetime both the composite thin-film passivated OLED and non-passivated OLED.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.185-185
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• 2010

유기 발광 소자에서 $Li_2CO_3$를 전자 주입층으로 사용하여 전류, 전압, 휘도 그리고 수명을 살펴 보았다. 전자 주입층을 사용함으로써 음전극과 전자 수송층 사이의 전자 주입의 에너지 장벽을 낮출 수 있다. 전자 주입층에 Ca, Mg, Li 등과 같은 낮은 일 함수의 금속을 사용하면, 음전극과 유기물층 사이의 효과적인 전자 주입을 도울 수 있다. 소자의 구조는ITO/TPD(40nm)/$Alq_3$(60nm)/$Li_2CO_3$(xnm)/Al(100nm)으로 하였으며, $Li_2CO_3$의 두께를 0.1, 0.2, 0.3, 0.5, 0.7, 0.9, 1.2, l.5nm로 변화시켜 소자를 제작하였다. $Li_2CO_3$의 박막 두께가 0.3nm일 때, 전자 주입층을 사용하지 않은 소자에 비하여 효율은 2.4배 증가하였고, 구동전압은 0.75V 낮아졌다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.176-176
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• 2010

OLED(Organic Light Emitting Device)는 LCD(Liquid Crystal Display)의 뒤를 잇는 차세대 디스플레이의 선두주자로서 자체발광형이기 때문에 백라이트 등의 보조광원이 불필요하며, 구동전압이 낮고 넓은 시야각과 빠른 응답속도 등의 특징을 가지고 있다. 또한 플렉서블 기판을 사용할 수 있어 차세대 디스플레이인 플렉서블 디스플레이에 적합하다. 플렉서블한 디스플레이를 만들기 위해서 플라스틱 기판에 OLED 물질을 사용하여 기존에 무겁고, 깨지기 쉬우며, 변형이 불가능한 유리로 만든 소자 보다 더 가볍고 깨지지 않고 변형이 가능한 플렉서블 디스플레이를 제작 할 수 있다. 그러나 플라스틱 기판은 매우 큰 투습율을 가지고 있어 OLED소자에 적용시키면 공기 중의 수분이나 산소와 접촉이 많아져 쉽게 산화되어 소자의 효율 및 수명이 짧아진다. 또한 OLED에 사용되는 유기물도 산소나 수분에 의해 특성이 급격히 저하되기 때문에 산소 및 수분의 차단은 필수적이다. 이러한 단점을 최소화하기 위해서 PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride), $SiO_2$(Sillicon dioxide), $Si_3N_4$(Sillicon nitride) 박막을 차단막(Passivation layer)으로 사용하였다. PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride), $SiO_2$(Sillicon dioxide), $Si_3N_4$(Sillicon nitride) 각각의 박막의 Crack의 특성을 85%-$85^{\circ}C$조건에서 24hr 측정하였다.