• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.127-128
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• 2000

Organic light-emitting diodes(OLEDs) are constructed using multilayer organic thin films. The hole-transport layer is PVK and the emitting material is rubrene and $Alq_3$. The emitting layer is doped with rubrene partially. As the partially-doped layer migrate from the interface PVK/emitting layer, the emission peak of rubrene decrease and diminish. By comparing with the previous reports, we propose the zero-field hole injection barrier at ITO/PVK interface and hole-trapping effect of rubrene in host materials as predominant factor to determine the emission zone.

• Journal of Information Display
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• v.8 no.3
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• pp.1-4
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• 2007

The influence of a silane layer on the performances of polymer light emitting diode(pLED)s has been studied. Glycidoxypropyltrimethoxysilane(GPS) with an epoxy functional group was used as a surface modifier for ITO substrates. The GPS layer was inserted between an ITO and a poly(3,4)-ethylenedioxythiophene/polystyrenesulfonate(PEDOT) by wet process and the performances of PLEDs were investigated. The introduction of GPS layer increased the brightness and efficiency of PLEDs by 30%. In addition, the lifetime of PLEDs was also improved considerably by using GPS as a surface modifier.

• Current Optics and Photonics
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• v.1 no.6
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• pp.613-617
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• 2017

Due to optimal advances such as chromatic performance, durability, low power consumption, high efficiency, long-lifetime, and excellent environmental friendliness, white LEDs (WLEDs) are widely used in vehicle front lighting, backlighting, decorative lighting, street lighting, and even general lighting. In this paper, the remote packaging WLEDs (RP-WLEDs) with bi-layer red-emitting $Sr_2Si_5N_8:Eu^{2+}$ and yellow-emitting YAG:Ce phosphor was proposed and investigated. The simulation results based on the MATLAB software and the commercial software Light Tools indicated that the color rendering index (CRI) of bi-layer phosphor RP-WLEDs had a significant increase. The CRI had a considerable increase from 72 to 94. In conclusion, the results showed that bi-layer red-emitting $Sr_2Si_5N_8:Eu^{2+}$ and yellow-emitting YAG:Ce phosphor could be a prospective approach for manufacturing RP-WLEDs with enhanced optical properties.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.779-780
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• 2009

New inverted architecture of a hybrid inorganic-organic light-emitting diode, utilizing ZrO2 electron-injecting layer, is presented. The thickness of the ZrO2, as well as the annealing of the light-emitting polymer, is found critical to obtain good performance. A range of light-emitting polymers is shown to operate efficiently in the proposed architecture.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.499-502
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• 2008

Effects of a dielectric capping layer on the luminous characteristics of top emitting organic light emitting diodes (TOLEDs) have been analyzed using a classical electromagnetic theory. Special attention was given to the influence of the cavity length on the effectiveness of the capping layer. The luminance characteristics of the TOLEDs influenced by the combined effects of the cavity length and the capping layer thickness. Furthermore, these combined effects also modify the emission spectrum and pattern of the TOLEDs, which result in the improvement of total luminance of the device, but no significant change in the device out-coupling efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1381-1382
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• 2005

We report improved efficiency in blue electrophosphorescent organic light emitting diodes by introducing an interfacial exciton blocking layer between light emitting layer (EML) and hole transport layer (HTL). Iridium(III) bis [(4,6-di-fluorophenyl)- pyridinato -N,C2']picolinate (FIrpic) was used as blue phosphorescent dopant and JHK6-3 with carbazole and electron transporting group as host and also as the interfacial layer, resulting in drastic increase in quantum efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.542-545
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• 2002

High performance organic electroluminescnet(EL) devices which are composed of organic thin multilayer films are fabricated. The basic structure is ITO/Emitting layer/LiF/Al in which have a blended emitting layer. The emitting layer is consisted of a host material(N,N' diphenyl-N,N' (3-methyl phenyl)-l,l'-biphenyl-4,4'diamine)(TPD)) and a guest emitting material(poly(3-hexylthiophehe)(P3HT)). We think that the energy transfer in blending layer occurred from TPD to P3HT. Red emitting multilayer EL devices were fabricated using tris(8-hydroxyqunolinate) aluminum$(Alq_3)$ as electron transport material. The device structure of ITO/blending layer(TPD+P3HT)$/Alq_3$/LiF/Al was employed. In the Voltage-current-luminance characteristics of multilayer device, the device tum on at the 2V and the luminance of $10{\mu}W/cm^2$ obtain at l0V. Red emission peak at 640nm was observed with this device structure. We have presented evidence that the excitation energy migration between a polymeric host and guest has to be explained. And by using multilayer, the red light emitting EL device enhances not only Voltage-current-luminance characteristic but also stability of device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.538-546
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• 2006

We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of $10^{11}$ electrons/$cm^3$ generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent $SiN_{x}$ passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below $50\;^{\circ}C$ without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the $SiN_x$ passivation layer without conventional lithography processes. Even at low substrate temperature, a $SiN_x$ passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of $5{\times}10^{-3}g/m^2/day$ and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.939-942
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• 2001

We fabricated Red Organic light-emitting devices(OLED). The Basic Device Structure is ITO/hole transfer layer, TPD(50nm)/red emitting layer, Alq3 doped with DCM2 or DCM2:rubrene(xnm)/electorn transfer layer, Alq3(50-xnm)/LiF(0.8nm)/Al(8nm) . The thickness of emitting layer(xnm) changed 5, 10, 20nm. we demonstrate red emitting OLED with dependent on the thickness and concentrators of Alq3 layer doped with DCM2 or co-doped with DCM2:ruberene. The Emission color and Brightness are changed with doping or co-doping condition, dopant concentarton. In the case of rubrene:DCM2 co-doped layer structure, the red color Purity and device efficiency is improved. The CIE index of rubrene co-doped OLED is x=0.67, y=0.31. By co-doping the Alq3 layer with DCM2, rubrene, EL efficiency improved from 0.38cd/A to 0.44cd/A in comparison whit DCM2 doped Alq3 layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1018-1021
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• 2003

We have synthesized poly(3-hexylthiophene) and studied the optical properties of P3HT for applying to the red emitting materials of organic electroluminescent device. Usually, an organic EL device is composed of single layer like anode/emitting layer/cathode, but additional layer such as hole transport, electron transport and buffer layer is deposited to improve device efficiency. In this study, Multilayer EL devices were fabricated using tris(8-hydroxyquinolinate) aluminum($Alq_3$) as electron transport material, (N,N'-diphenyl-N,,N'(3-methylphenyl)-1,1'-biphenyl-4,4'diamine))(TPD) as hole transport/electron blocking materials and LiF as buffer layer. That is, a device structure of ITO/blending layer(TPD+P3HT)/$Alq_3$/LiF/Al was employed. In the Multilayer device, the luminance of $10{\mu}W/cm^2$ obtained at 10V. And, we present the experimental evidence of the enhancement of the Foster energy transfer interaction in emitting layer.