• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.102-104
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• 1989

The characteristics of stearic acid and PDA (pentacosaDiyonicAcid) LB films were studied using the XRD spectra for regularity of layers and ellipsometer for the total thickness of multilayer films. From the experiments of varying the PH and temperature, it was found that the stability of monolayer on the water subphase was very sensitive to its PH and temperature. The optimum condition of PH for the stable stearic acid LB film was 6$\sim$6.5. The PDA LB films were stable at the lower temperature than room temperature: we obtained very uniform PDA LB films at 12$^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1487-1489
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• 1998

In this paper, thin films of PI were fabricated VDPM of dry processes which are easy to control the film's thickness and hard to pollute due to volatile solvents. From FT-lR, PAA thin films fabricated by VDP were changed to PI thin films by thermal curing. From SEM, AFM and Ellipsometer experimental, as the higher curing temperatures the films thickness decreases and reflectance increases. Therefore, Pl could be fabricated stable by increasing curing temperature. The relative permitivity and dissipation loss factor were 3.7 and 0.008. Also, the resistivity was about $1.05{\times}10^{15}{\Omega}cm$ at $30^{\circ}C$.

• 한국광학회지
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• 제15권6호
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• pp.527-530
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• 2004

회전검광자방식 편광분석방법을 이용하여 LCD (liquid crystal display) 편광판에 부착되어 있는 보상판의 느린축이 편광판의 투과축 대비 틀어진 각도를 0.1도 이내로 정밀하게 측정할 수 있는 방법을 제안하였다. 본 방법을 이용하면 보상판을 LCD 편광판과 접합하는 공정에서 발생하는 광축정렬의 오차를 줄일 수 있고 궁극적으로 LCD의 화질을 일정하게 유지, 관리하는데 기여할 수 있을 것으로 기대된다.

• 한국결정성장학회지
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• 제15권4호
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• pp.157-161
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• 2005

Hot-wall epitaxy 법으로 GaAs 기판 위에 성장시킨 CdTe 박막을 실온에서 포톤에너지 1.5${\~}$5.5 eV 영역에서 타원 분광기로 복소 유전함수를 구하였다. 타원분광기의 스펙트럼에서는 $E_l,\;E_1+{\Delta}_1$, $E_2$의 임계점이 관찰되었으며 이들 에너지는 CdTe 박막의 두께가 증가함에 따라 감소하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.206-209
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• 2003

The purpose of AR and HR coating is acquire the very low reflection rate and the high reflection rate through the deposition of a thin film using the refraction ofmaterial. Basically if the high refractive material and the low refractive material are chosen and the condition for the experiment is determined, then we solve theproject with the optical design and multi thin film coating. First of all, we choose $SiO_2$for the low refractive material and $TiO_2$ for the high refractive material and apply Sputtering System easy to control the refraction rate and excellent in reconstruction to the equipment of thin film multiplication. For the control of the refraction rate and growth rate we modify RF Power and the ratio of Gas(Ar:O2), And we use Ellipsometer for estimation and analysis of the refraction rate and growth rate and AFM&SEM for the analysis of surface and component.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.381.2-381.2
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• 2014

In this study the amorphous carbon films were deposited by PECVD at the substrate temperature range of 250 to $600^{\circ}C$, and the process conditions of higher and lower precursor flow rate, respectively. The temperature was a main parameter to control the density and mirco-structures of carbon films, and their's properties depended with the process temperatrue are changed by controlling precursor flow rate. The precursor feeding rate affect on the plasma ion density and a deposition reactivity. This change of film properties was obtained the instrinsic stress, FT-IR & Raman analysis, refractive index (RI) and ext. coef. (k) measured by ellipsometer. In the process conditions of lower and higher flow rate of precursor it had a different intrinsic stress as a function of the substrate temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.168.2-168.2
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• 2014

반사방지막 코팅(Anti-reflection coating)은 태양전지(Solar cell), 발광다이오드(LED) 등의 반사율을 낮추어 효율을 증대시키기 위하여 사용되고 있다. 본 실험에서는 유리 기판 위에 실리콘 타겟을 이용한 반응성 high power impulse magnetron sputtering (HIPIMS) 장비를 활용하여, 높은 공정 압력(High-pressure)에서 펄스폭(Pulse width)을 조절하여 $SiO_2$ 반사방지막 코팅층을 형성하였다. 또한, 기공이 더 많은 박막을 제작하기 위해 빗각증착(Oblique-angle deposition)을 적용하여 더 좋은 광학 특성을 갖는 반사방지막 코팅층을 형성하였다. UV-Vis spectrometer를 이용하여, 380~800 nm 파장에서 투과율(Transmittance)을 측정하여 비교, 분석하였다. Ellipsometer를 이용하여 $SiO_2$ 박막층의 굴절률(Refractive index)을 측정한 결과, 반사방지막 코팅층 내부 기공에 따라 다양한 굴절률을 가지는 것을 확인할 수 있었다. 또한, 코팅층 내부 기공의 형상을 확인하기 위해 SEM(Secondary electron microscopy)을 활용하여 코팅층 단면(Cross section)을 측정하였다. 이를 활용하여 낮은 굴절률을 갖는 반사방지용 $SiO_2$ 코팅층을 형성하여 태양전지의 광 변환 효율을 상승 시킬 수 있고, 발광다이오드의 광 추출 효율을 증가시킬 있을 것으로 여겨진다.

• 한국표면공학회지
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• 제29권6호
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• pp.666-672
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• 1996

The optical property of CdTe thin film is important for applications such as the compound semiconductor type solar cells. CdTe films are prepared by RF sputtering at various substrate temperature between $25^{\circ}C$ and $300^{\circ}C$, then, annealed in argon gas environment at $400^{\circ}C$. The annealing process of the thin film caused variation in the film structure and the composition of films. The deformation of CdTe thin film was observed by X-ray diffractometry. After annealing, the grain size increased and the portion of the non-crystalline CdTe reduced. Futhermore, the structure of sputtered CdTe film grown at the substrate temperature more than $250^{\circ}C$ was enhanced in the (111) direction of zincblend structure. There was a discrepancy, in the spectroscopic ellipsometer spectrum, between the single crystal CdTe and the sputtered CdTe thin films, especially in the region over 3.2eV. An oxidation layer was found on the CdTe thin film by spectroscopic ellipsometry analysis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.194-194
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• 2011

The effects of argon neutral beam (NB) energy on the amorphous carbon (a-C) films were investigated, while the a-C films were deposited by neutral particle beam assisted sputtering (NBAS) system. The energy of neutral particle beam can be controlled by reflector bias voltage directly as a unique operating parameter in this system. The deposition characteristics of the films investigated of Raman spectra, UV-visible spectroscopy, electrical conductivity, stress measurement system, and ellipsometer indicate the properties of amorphous carbon films can be manipulated by only NB energy (or reflector bias voltage) without changing any other process parameters. We report the effect of reflector bias voltage in the range from 0 to -1KV. By the increase of the reflector bias voltage, the amount of cross-linked sp2 clusters as well as the sp3 bonding in the a-C film coated by the NBAS system can be increased effectively and the composition of carbon thin films can be changed from nano-crystalline graphite phase to amorphous carbon phase.