• 제목/요약/키워드: electronics

검색결과 71,331건 처리시간 0.062초

Towards a Colored Electronic Paper through a Fabrication of Color Microencapsulated Electrophoretic Display Panel

  • Kim, Chul-Am;Myoung, Hey-Jin;Kang, Seung-Youl;Chung, Hee-Sook;Kim, Gi-Heon;Ahn, Seong-Deok;You, In-Kyu;Oh, Ji-Young;Baek, Kyu-Ha;Soo, Kyung
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1415-1418
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    • 2006
  • The color electronic paper display panel, which is fabricated with about $300\;{\mu}m$ width of each color pixel strip and is possible to integrated into a fundamental full-color flexible display prototype, is presented. The monolayer of close-packed color electrophoretic microcapsules is formed on the ITO electrode. The color pixel strips are composed of each color electrophoretic microcapsules (i.e., cyan, magenta, yellow, and black).

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Effect of Hydrogen in the Gate Insulator on the Bottom Gate Oxide TFT

  • KoPark, Sang-Hee;Ryu, Min-Ki;Yang, Shin-Hyuk;Yoon, Sung-Min;Hwang, Chi-Sun
    • Journal of Information Display
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    • 제11권3호
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    • pp.113-118
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    • 2010
  • The effect of hydrogen in the alumina gate insulator on the bottom gate oxide thin film transistor (TFT) with an InGaZnO film as the active layer was investigated. TFT with more H-containing alumina films (TFT A) fabricated via atomic layer deposition using a water precursor showed higher stability under positive and negative bias stresses than that with less H-containing alumina deposited using ozone (TFT B). While TFT A was affected by the pre-vacuum annealing of GI, which resulted in $V_{th}$ instability under NBS, TFT B did not show a difference after the pre-vacuum annealing of GI. All the TFTs showed negative-bias-enhanced photo instability.

Development of a 14.1 inch Full Color AMOLED Display with Top Emission Structure

  • Jung, J.H.;Goh, J.C.;Choi, B.R.;Chai, C.C.;Kim, H.;Lee, S.P.;Sung, U.C.;Ko, C.S.;Kim, N.D.;Chung, K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.793-796
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    • 2005
  • A structure and a design of device were developed to fabricate large-scale active matrix organic light-emitting diode (AMOLED) display with good color purity and high aperture ratio. With these technologies, we developed a full color 14.1 inch WXGA AMOLED display. For the integration of OLED on an active matrix a-Si TFT backplane, an efficient top emission OLED is essential since the TFT circuitry covers a large position of the pixel aperture. These technologies will enable up the OLED applications to larger size displays such as desktop monitors and TVs.

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Novel Backplane for AM-OLED Device

  • Sung, Myeon-Chang;Lee, Ho-Nyun;Kim, Chang Nam;Kang, Sun Kil;Kim, Do Youl;Kim, Seong-Joong;Kim, Sang-Kyoon;Kim, Sung-Kab;Kim, Hong-Gyu;Kim, Sung-Tae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.133-136
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    • 2007
  • IGZO TFTs were fabricated by conventional photolithography and wet-etching processes on metal substrates for the flexible display. The characteristics of TFTs on metal substrates were comparable to those of TFTs on glass substrates. Moreover, AM-OLED panels based on IGZO TFT arrays on metal substrates were successfully driven, for the first time.

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Approach to High Stable Oxide Thin-Film Transistors for Transparent Active Matrix Organic Light Emitting Devices

  • Cheong, Woo-Seok;Lee, Jeong-Min;Jeong, Jae-Kyeong;KoPark, Sang-Hee;Yoon, Sung-Min;Cho, Doo-Hee;Ryu, Min-Ki;Byun, Chun-Won;Yang, Shin-Hyuk;Chung, Sung-Mook;Cho, Kyoung-Ik;Hwang, Chi-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.382-384
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    • 2009
  • In this study, high stable oxide thin-film transistors (TFTs) have been developed by using several approaching techniques, which including a change of the channel composition ratio in multi-component oxide semiconductors, a change of TFT structure with interfacial dielectric layers, a control of interface roughness, a channel-doping method, and so on.

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Education of Power Electronics in Japan

  • Matsui, Mikihiko;Ueda, Akiteru;Oguch, Kuniomi
    • Journal of Power Electronics
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    • 제2권4호
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    • pp.268-277
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    • 2002
  • Power electronics is an interdisciplinary area that is interstitial to all of the major disciplines of electrical engineering including power, electronics and control. Today, the covering field of power electronics has more widely spread out with the help of ever evolving microelectronics and computer science. Whereas, in Japan the tendency is becoming remarkable nowadays that science, especially "mathematics" and "hardware work", are falling into disfavor with the young people. For these reasons, it has become a very important problem to find out "what are the truest essentials of power electronics\ulcorner" and "How to give students incentives to learn power electronics\ulcorner " from an educational point of view In under-graduate and graduate courses in universities. On the other hand, the power electronics engineers in companies are always required to comply with the ever changing trend of global and open market. However, it takes long time to cultivate their skills. Against the background, "The Cooperative Research Committee on Education of Power Electronics" was established in the IEEJ Industry Applications Society during 2000-2001. The present status of the power electronics education in Japan is surveyed in this paper, and some problems with remedy are pointed out based on the discussions performed in the committee.sed on the discussions performed in the committee.

Implementation of mmWave long-range backhaul for UAV-BS

  • Jangwon Moon;Junwoo Kim;Hoon Lee;Youngjin Moon;Yongsu Lee;Youngjo Bang;Kyungyeol Sohn;Jungsook Bae;Kwangseon Kim;Seungjae Bahng;Heesoo Lee
    • ETRI Journal
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    • 제45권5호
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    • pp.781-794
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    • 2023
  • Uncrewed aerial vehicles (UAVs) have become a vital element in nonterrestrial networks, especially with respect to 5G communication systems and beyond. The use of UAVs in support of 4G/5G base station (uncrewed aerial vehicle base station [UAV-BS]) has proven to be a practical solution for extending cellular network services to areas where conventional infrastructures are unavailable. In this study, we introduce a UAV-BS system that utilizes a high-capacity wireless backhaul operating in millimeter-wave frequency bands. This system can achieve a maximum throughput of 1.3 Gbps while delivering data at a rate of 300 Mbps, even at distances of 10 km. We also present the details of our testbed implementation alongside the performance results obtained from field tests.

3.2-kW 9.7-GHz Polarization-maintaining Narrow-linewidth All-fiber Amplifier

  • Hang Liu;Yujun Feng;Xiaobo Yang;Yao Wang;Hongming Yu;Jue Wang;Wanjing Peng;Yanshan Wang;Yinhong Sun;Yi Ma;Qingsong Gao;Chun Tang
    • Current Optics and Photonics
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    • 제8권1호
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    • pp.65-71
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    • 2024
  • We present a Yb-doped narrow-linewidth polarization-maintaining all-fiber amplifier that achieves a high mode-instability (MI) threshold, high output power, and 9.7-GHz spectral linewidth. Six wavelength-multiplexed laser diodes are used to pump this amplifier. First, we construct a high-power fiber amplifier based on a master oscillator-power amplifier configuration for experiments. Subsequently, we examine the MI threshold by individually pumping the amplifier with wavelengths of 976, 974, 981, 974, and 981 nm respectively. The experimental results demonstrate that the amplifier exhibits a high MI threshold (>3.5 kW) when pumped with a combination of wavelengths at 974 and 981 nm. Afterward, we inject an optimized phase-modulated seed with a nearly flat-top spectrum into this amplifier. Ultimately, laser output of 3.2 kW and 9.7 GHz are obtained.