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The Effect of Synthesis Conditions on the Electrochemical Properties of LiFePO4 for Cathode Material of Secondary Lithium Ion Batteries (리듐 2차 전지용 약극활물질 LiFePO4의 합성 조건에 다른 전기화학적 특성)

  • Kim, Do-Gyun;Park, Hyun-Min;Jeong, Yeon-Uk;Lee, Joon-Hyung;Kim, Jeong-Joo
    • Journal of the Korean Ceramic Society
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    • v.43 no.2 s.285
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    • pp.121-125
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    • 2006
  • [ $LiFePO_4$ ] is one of the promising materials for cathode material of secondary lithium batteries due to its high energy density, low cost, environmental friendliness and safety. $LiFePO_4$ was synthesized by the solid-state reaction method at 500 - 800°C. The crystal structure of $LiFePO_4$ was analyzed by X-ray powder diffraction. The samples synthesized at 600 and $700^{\circ}C$ showed a single phase of a olivine structure. The particle sizes were increased and the specific surface areas were decreased with heating temperatures. The electrochemical performance was investigated by coin cell test. The discharge capacities at 0.1 C-rate were 118 mAh/g and 112 mAh/g at $600^{\circ}C,\;700^{\circ}C$, respectively. In an attempt to improve the electrical conductivity of cathode materials, $LiFePO_4/graphite$ composite was prepared with various graphite contents. The electrical conductivity and discharge capacity were increased with increasing the graphite contents in composite samples. The rate capabilities at high current densities were also improved.

Model-Based Analysis of the $ZrO_2$ Etching Mechanism in Inductively Coupled $BCl_3$/Ar and $BCl_3/CHF_3$/Ar Plasmas

  • Kim, Man-Su;Min, Nam-Ki;Yun, Sun-Jin;Lee, Hyun-Woo;Efremov, Alexander M.;Kwon, Kwang-Ho
    • ETRI Journal
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    • v.30 no.3
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    • pp.383-393
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    • 2008
  • The etching mechanism of $ZrO_2$ thin films and etch selectivity over some materials in both $BCl_3$/Ar and $BCl_3/CHF_3$/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In $BCl_3$/Ar plasma, changes in gas mixing ratio result in non-linear changes of both densities and fluxes for Cl, $BCl_2$, and ${BCl_2}^+$. In this work, it is shown that the non-monotonic behavior of the $ZrO_2$ etch rate as a function of the $BCl_3$/Ar mixing ratio could be related to the ion-assisted etch mechanism and the ion-flux-limited etch regime. The addition of up to 33% $CHF_3$ to the $BCl_3$-rich $BCl_3$Ar plasma does not influence the $ZrO_2$ etch rate, but it non-monotonically changes the etch rates of both Si and $SiO_2$. The last effect can probably be associated with the corresponding behavior of the F atom density.

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Dy co-doping effect on photo-induced current properties of Eu-doped SrAl2O4 phosphor (Eu 도핑 SrAl2O4 형광체의 광 여기 전류 특성에 대한 Dy 코-도핑 효과)

  • Kim, Sei-Ki
    • Journal of Sensor Science and Technology
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    • v.18 no.1
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    • pp.48-53
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    • 2009
  • $Eu^{2+}$-doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors have been synthesized by conventional solid state method. Photocurrent properties of $Eu^{2+}$ doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors, in order to elucidate $Dy^{3+}$ co-doping effect, during and after ceasing ultraviolet-ray (UV) irradiation have been investigated. The photocurrent of $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors during UV irradiation was 4-times lower than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ during UV irradiation, and 7-times higher than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ after ceasing UV irradiation. The photocurrent results indicated that holes of charge carriers captured in hole trapping center during the UV irradiation and liberated after-glow process, and made clear that $Dy^{3+}$ of co-dopant acted as a hole trap. The photocurrent of ${SrAl_2}{O_4}$ showed a good proportional relationship to UV intensity in the range of $1{\sim}5mW/cm^2$, and $Eu^{2+}$-doped ${SrAl_2}{O_4}$ was confirmed to be a possible UV sensor.

Electroencephalography for Occupational Therapy for Stroke Patients: A Literature Review (뇌졸중 환자의 작업치료 중재 결과를 측정하기 위해 사용된 뇌전도(Electroencephalography)에 대한 문헌 고찰)

  • Kwak, Ho-Soung;Park, Ji-Hyuk
    • Therapeutic Science for Rehabilitation
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    • v.7 no.2
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    • pp.9-16
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    • 2018
  • Objective : The aim of this research was to provide EEG (electroencephalogram) basic data in clinical areas through identifying measurement tools, measurement methods, and evaluation and analysis method of the EEG which is a neurological change measurement of patients with brain injury. Methods : Previous studies were found in an electronic database (e.g., PubMed, Science Direct). The keyword search terms were 'Electroencephalography', 'stroke', 'intervention OR training'. Results : Utilitizing brain-computer interface, the EEG, which is a tool for measuring the effects of rehabilitation through changes of brain activation state. Also, it could identify functional brain reorganization mechanism. Whenever a research utilized the EEG, which is composed of various channels, different types of electrode, and varied electrode locations. Conclusions : Through this review, we found that Electroencephalography is possible to neurologically verify the effectiveness of intervention and formulate an intervention strategy for efficient occupational therapy.

Time-resolved photoluminescence spectroscopy of InGaN multiple quantum wells

  • Lee, Joo-In;Shin, Eun-joo;Lee, J.Y. m;Kim, S.T.;G.S. Lim;Lee, H.G.
    • Journal of Korean Vacuum Science & Technology
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    • v.4 no.1
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    • pp.23-26
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    • 2000
  • We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.

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MAX-MIN Flow Control Supporting Dynamic Bandwidth Request of Sessions (세션의 동적 대역폭 요구를 지원하는 최대-최소 흐름제어)

  • Cho, Hyug-Rae;Chong, Song;Jang, Ju-Wook
    • Journal of Institute of Control, Robotics and Systems
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    • v.6 no.8
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    • pp.638-651
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    • 2000
  • When the bandwidth resources in a packet-switched network are shared among sessions by MAX-MIN flow control each session is required to transmit its data into the network subject to the MAX-MIN fair rate which is solely determined by network loadings. This passive behavior of sessions if fact can cause seri-ous QoS(Quality of Service) degradation particularly for real-time multimedia sessions such as video since the rate allocated by the network can mismatch with what is demanded by each session for its QoS. In order to alleviate this problem we extend the concept of MAX-MIN fair bandwidth allocations as follows: Individual bandwidth demands are guaranteed if the network can accommodate them and only the residual network band-width is shared in the MAX-MIN fair sense. On the other hand if sum of the individual bandwidth demands exceeds the network capacity the shortage of the bandwidth is shared by all the sessions by reducing each bandwidth guarantee by the MAX-MIN fair division of the shortage. we present a novel flow control algorithm to achieve this extended MAX-MIN fairness and show that this algorithm can be implemented by the existing ATM ABR service protocol with minor changes. We not only analyze the steady state asymptotic stability and convergence rate of the algorithm by appealing to control theories but also verify its practical performance through simulations in a variety of network scenarios.

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Development of Land Compensation System Based on GIS for the Regional Construction Management Office (지리정보체계 기반의 지방청 용지보상시스템 구축)

  • Seo Myoung-Bae;Kim Nam-Gon;Kang Eui-Seok
    • Korean Journal of Construction Engineering and Management
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    • v.5 no.1 s.17
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    • pp.62-70
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    • 2004
  • The use of private property occurs fatally to achieve public work such as road construction and appropriate compensation for land expropriation must be performed to use private property such as land. Since compensation of land expropriation is complicated and compensation target is various, electronic processing system development for land compensation processing business is required. The land compensation system for Regional Construction Management Office applied geographic information system (GIS) technology to land drawing that becomes basis of compensation business when constructing roads. It can perform the establishment of compensation planning, the understanding of the present state of compensation and the management of compensation business by connecting with land position information on drawings. We also implemented our system so that it can effectively accomplish various kinds of works such as compensation by agreement, expropriation, decision and deposit etc. Development of the land compensation system that can reduce time for processing civil affair administration and decrease costs efficiently to handle land compensation business

The Characteristics of Surface Flashover on the Semiconductor in High Electric-Field (고전계 하에서 반도체 연면방전 특성)

  • 이세훈;이충식
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.16 no.1
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    • pp.35-43
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    • 2002
  • In the last decade, considerable efforts have been made to make a new class of solid state high power, high speed electronic device, namely, the Photo-Conductive Power Switch(PCPS), and to characterize the high-field performance of PCPS under high power, high voltage conditions. But the problem of surface flashover phenomena persist, preventing the realization of reliable and efficient high-speed, high voltage switching devices. It is essential to have a clear understanding on the physical processes behind the surface flashover problem to develop new technologies and device architectures so as to fabricate PCPS that are capable of high-field high-voltage. Also, it is imperative to identify new materials that could satisfy the requirements for high-field, high-power devices. Since surface flashover, surface breakdown phenomena is observed for all the devices that foiled at the applied field much lower than semiconductor bulk breakdown field, surface passivation is considered one of the important practical methods to improve the high field performance of the devices. Therefore, this paper was studied the main properties and mechanism of the semiconductor surface flashover before and after passivation under high electric-field.

A novel IGBT with improved electrical characteristics (향상된 전기적 특성을 갖는 IGBT에 관한 연구)

  • Koo, Yong-so
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.6 no.3
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    • pp.168-173
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    • 2013
  • In this paper, we tried different two approach to improve the performance of the IGBT. The first approach is that adding N+ region beside P-base in the conventional IGBT. It can make the conventional IGBT to get faster turn-off time and lower conduction loss. The second approach is that adding P+ region on right side under gate to improve latching current of conventional IGBT. The device simulation results show improved on-state, latch-up and switching characteristics in each structure. The first one was presented lower voltage drop(3.08V) and faster turn-off time(3.4us) than that of conventional one(3.66V/3.65us). Also, second structure has higher latching current(369A/?? ) that of conventional structure. Finally, we present a novel IGBT combined the first approach with second one for improved trade-off characteristic between conduction and turn-off losses. The proposed device has better performance than conventional IGBT.

A Review of Transaction-Based Energy Management Technology for Energy Prosumers (에너지 프로슈머를 위한 거래기반 에너지 관리기술 동향분석)

  • Koh, Seak Bai;Son, Sung-Yong
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.11 no.1
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    • pp.45-53
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    • 2018
  • The proliferation of distributed power sources such as renewable energy sources drives the changes of consumers to prosumers who actively want to deal with energy. The prosumer is a new type of consumer that can sell surplus energy or additionally generated energy to electric power companies, other energy service providers, or other consumers. To implement such a concept, a new technology and platform that can support the transaction of the prosumers are required. However, the study in the area is limited since it is in the early stage. This work examines the state-of-the-art transaction-based energy management technology through comparative analysis of representative technologies to show the future trends. Although, technologies and standards for transaction based energy are not much matured yet. related new research will be continued via competitions.