• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3129-3131
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• 1999

The electronic ballast for MHD lamp was studied for automotive headlight application. Its basic principle is the Current Sourcing Push-Pull Resonant Inverter with DC I2Volt input Voltage. By changing the switching frequency according to the lamp state, the automotive requirement of very fast warm-up and the zero voltage switching condition were shown by the simulation of the ballast circuit.

• Proceedings of The Korean Society of Agricultural and Forest Meteorology Conference
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• 2001.06a
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• pp.93-96
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• 2001

Estimation of leaf wetness duration (LWD) facilitates assessment of the likelihood of outbreaks of many crop diseases. Models that estimate LWD may be more convenient and grower-friendly than measuring it with wetness sensors. Empirical models utilizing statistical procedures such as CART (Classification and Regression Tree; Gleason et al., 1994) have estimated LWD with accuracy comparable to that of electronic sensors.(omitted)

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.475-476
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• 2007

The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhibitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhibitory state.

• Journal of the Korean Graphic Arts Communication Society
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• v.30 no.3
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• pp.77-88
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• 2012

In this report, we performed the measurements of physical properties of optical discs as a long term preservation electronic recording device and showed how to improve the preservation method of them. We collect the 1,993 optical discs from the archives of the National Archives of Korea and tested various measurements. We used DVDT-SD4 equipment to measure the quality of data, deformation of disc, the various writing strategy and manufacturer derives, which can be happened in optical discs by physical factors. We found that th quality of data are closely related with write strategy between discs and drives. This relation gives us information about data quality in optical discs for long term preservation that can be obtained from the state between empty discs and optical drives before recording. Thus, the initial selection of optimal discs and drives is critical for long term recording data preservation and the data quality after long time preservation will not be much different from that of the initial ones.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.73-77
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• 2011

Specific heat of a crystal is the sum of electronic specific heat, which is the specific heat of conduction electrons, and lattice specific heat, which is the specific heat of the lattice. Since properties such as crystal structure and Debye temperature do not change even in the superconducting state, the lattice specific heat may remain unchanged between the normal and the superconducting state. The difference of specific heat between the normal and superconducting state may be caused only by the electronic specific heat difference between the normal and superconducting states. Critical temperature, at which transition occurs, becomes lower than $T_{c0}$ under the influence of a magnetic field. It is well known that specific heat also changes abruptly at this critical temperature, but magnetic field dependence of jump of specific heat has not yet been developed theoretically. In this paper, specific heat jump of superconducting crystals at low temperature is derived as an explicit function of applied magnetic field H by using the thermodynamic relations of A. C. Rose-Innes and E. H. Rhoderick. The derived specific heat jump is compared with experimental data for superconducting crystals of $MgCNi_3$, $LiTi_2O_4$ and $Nd_{0.5}Ca_{0.5}MnO_3$. Our specific heat jump function well explains the jump up or down phenomena of superconducting crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.192-195
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• 2007

Structural and electronic properties of bulk GaN with nitrogen vacancy($V_N$), oxygen substitution on nitrogen site($O_N$), and complex of nitrogen vacancy and oxygen substitution on nitrogen site($V_N-O_N$) were investigated using the first principle calculations. It was found that stability of defect formation is dependent on the epilayer growth conditions. The complex of $V_N-O_N$ is energetically the most favorable state in a condition of Ga-rich, however, oxygen substitution in nitrogen site is the most favorable state in N-rich condition. The electronic property of complex with negative charge states at $\Gamma$ point was changed from semiconductor to metal. On the contrary, the properties of nitrogen vacancy except for neutral charge state have shown the semiconductor characteristics at $\Gamma$ point. In the oxygen substitution on nitrogen site, the energy differences between conduction band minimum and Fermi level were smaller than that of defect-free GaN.

• Korean Journal of Materials Research
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• v.25 no.11
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• pp.642-646
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• 2015

Super alloys, which can be divided into three categories, i.e. Ni-base, Co-base, and Fe-base alloys, are widely used for high temperature applications. Since superalloys contain many alloying elements and precipitates, their chemistry and processing parameters need to be carefully designed. In this study, we designed a new Ni alloy to prevent corrosion due to water vapor and gases at high temperatures. The new alloy was designed using the theoretical value of the resulting energy electronic state calculation($DV-X{\alpha}$ method). The components that were finally used were Cr, Mo, and Ti, with Ni as a base. For these alloys, elements were selected in order to compare their values with that of the average theoretical basis for an Inconel 625 alloy. Finally, two kinds of Ni alloy were designed: Ni-28Cr-4Mo-2Ti and Ni-20Cr-10Mo-1Ti.

• Journal of the Semiconductor & Display Technology
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• v.8 no.1
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• pp.13-17
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• 2009

In PRAM applications, the devices can be made for both binary and multi-state storage. The ability to attain intermediate stages comes either from the fact that some chalcogenide materials can exist in configurations that range from completely amorphous to completely crystalline or from designing device structure such a way that mimics multiple phase chase phenomena in single cell. We have designed stack-structured phase change memory cell which operates as multi-state storage. Amorphous $Ge_xTe_{100-x}$ chalcogenide materials were stacked and a diffusion barrier was chosen for each stack layers. The device is operated by crystallizing each chalcogenide material as sequential manner from the bottom layer to the top layer. The amplitude of current pulse and the duration of pulse width was fixed and number of pulses were controlled to change overall resistance of the phase change memory cell. To optimize operational performance the thickness of each chalcogenide was controlled based on simulation results.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.392-397
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• 2015

Recently computer games have been widely spread. For the purpose of studying brain activities, EEG was measured during the computer game and analyzed in terms of channels and frequency bands. EEG data were obtained during the resting state and game immersion. Then the power spectra of alpha, beta and theta bands were computed. During game immersion, the ratio between theta / alpha could effectively differentiate between rest and game immersion. Changes in brain activity (26~53%) were observed in the parietal and occipital lobes. Interestingly, immersion shows different features compared to concentration. The state of game immersion could be detected. Therefore, it is possible to utilize the state of immersion as one of the game parameters or to generate a control signal that may be used to provide a warning message or abort the game when the situation of the excessive indulgence in the game reaches. EEG can be applied as smart interface for computer game.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.36-39
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• 2000

A small electrical potential difference which appears on any solid body when subjected to illumination by a modulated light beam generated by laser is called photocharge voltage(PCV)[1,2]. This voltage is proportional to the induced change in the surface electrical charge and is capacitatively measured on various materials such as conductors, semiconductors, ceramics, dielectrics and biological objects. The amplitude of the detected signal depends on the type of material under investigation, and on the surface properties of the sample. In photocharge voltage spectroscopy measurements[3], the sample is illuminated by both a steady state monochromatic bias light and the pulsed laser. The monochromatic light is used to created a variation in the steady state population of trap levels in the surface and space charge region of semiconductor samples which does result in a change in the measured voltage. Using this technique the spatial variation of PCV can be utilized to evaluate the surface conditions of the sample and the variation of the PCV due to the monochromatic bias light are utilized to characterize the surface states. A qualitative analysis of the proposed measurement is present along with experimental results performed on amorphous silicon samples. The deposition temperature was varied in order to obtain samples with different structural, optical and electronic properties and measurements are related to the defect density in amorphous thin film.