• 제목/요약/키워드: electronic state

검색결과 3,095건 처리시간 0.032초

A Mechanical Sensorless Vector-Controlled Induction Motor System with Parameter Identification by the Aid of Image Processor

  • Tsuji Mineo;Chen Shuo;Motoo Tatsunori;Kawabe Yuki;Hamasaki Shin-ichi
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • 제5B권4호
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    • pp.350-357
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    • 2005
  • This paper presents a mechanical sensorless vector-controlled system with parameter identification by the aid of image processor. Based on the flux observer and the model reference adaptive system method, the proposed sensorless system includes rotor speed estimation and stator resistance identification using flux errors. Since the mathematical model of this system is constructed in a synchronously rotating reference frame, a linear model is easily derived for analyzing the system stability, including motor operating state and parameter variations. Because it is difficult to identify rotor resistance simultaneously while estimating rotor speed, a low-accuracy image processor is used to measure the mechanical axis position for calculating the rotor speed at a steady-state operation. The rotor resistance is identified by the error between the estimated speed using the estimated flux and the calculated speed using the image processor. Finally, the validity of this proposed system has been proven through experimentation.

Pd-SiC 쇼트키 다이오드의 수소 가스 감응 특성 (Hydrogen Gas Sensing Characteristics of Pd-SiC Schottky Diode)

  • 김창교;이주헌;이영환;최석민;조남인
    • 센서학회지
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    • 제8권6호
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    • pp.448-453
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    • 1999
  • Pd-SiC 쇼트키 다이오드를 이용한 수소 가스 센서를 개발하였다. Pd-SiC 쇼트키 다이오드의 수소 가스 감지특성을 I-V 및 ${\Delta}I$-t 분석을 통하여 수소 농도와 온도 함수로서 분석하였다. 또한, 수소 흡착에 의한 Pd-SiC 쇼트키 다이오드의 장벽 높이의 변화를 조사하였다. 수소 원자의 흡착이 다이오드의 장벽 높이의 변화와 관계되는 것을 I-V 분석을 이용하여 정상 상태에서의 가스 반응 속도론에 의하여 확인하였다.

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Active Distribution System Planning Considering Battery Swapping Station for Low-carbon Objective using Immune Binary Firefly Algorithm

  • Shi, Ji-Ying;Li, Ya-Jing;Xue, Fei;Ling, Le-Tao;Liu, Wen-An;Yuan, Da-Ling;Yang, Ting
    • Journal of Electrical Engineering and Technology
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    • 제13권2호
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    • pp.580-590
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    • 2018
  • Active distribution system (ADS) considering distributed generation (DG) and electric vehicle (EV) is an effective way to cut carbon emission and improve system benefits. ADS is an evolving, complex and uncertain system, thus comprehensive model and effective optimization algorithms are needed. Battery swapping station (BSS) for EV service is an essential type of flexible load (FL). This paper establishes ADS planning model considering BSS firstly for the minimization of total cost including feeder investment, operation and maintenance, net loss and carbon tax. Meanwhile, immune binary firefly algorithm (IBFA) is proposed to optimize ADS planning. Firefly algorithm (FA) is a novel intelligent algorithm with simple structure and good convergence. By involving biological immune system into FA, IBFA adjusts antibody population scale to increase diversity and global search capability. To validate proposed algorithm, IBFA is compared with particle swarm optimization (PSO) algorithm on IEEE 39-bus system. The results prove that IBFA performs better than PSO in global search and convergence in ADS planning.

제1원리 분자궤도계산법에 의한 $MnO_2$ 산화물 반도체의 전자상태에 미치는 불순물 첨가 효과의 계산 (Calculation on Effect of Impurity Addition on Electronic State of $MnO_2$ Oxide Semiconductor by First Principle Moleculat Orbital Method)

  • 이동윤;김봉서;송재성;김현식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.99-102
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    • 2003
  • The electronic structure of ${\beta}-MnO_2$ having impurities in the site of Mn was theoretically investigated by $DV-X_{\alpha}$ (the discrete variation $X{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The used cluster model was $[Mn_{14}MO_{56}]^{-52}$ (M = transient metals). Madelung potential and spin polarization were considered for more exact calculations. As results of calculations, the energy levels of all electron included in the model were obtained. The energy band gap and positions of impurity levies were discussed in association with impurity 34 orbital that seriously affect electrical properties of $MnO_2$. It was shown that the energy band gap decreased with the increase of the atomic number of transient metal impurity.

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III, IV족 불순물이 첨가된 ZnO의 전자상태계산 (Calculation on Electronic Structure of ZnO with Impurities Belonging to III and IV Family)

  • 이동윤;김현주;구보근;이원재;송재성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.309-312
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    • 2004
  • The electronic structure of ZnO oxide semiconductor having high optical transparency and good electric conductivity was theoretically investigated by $DV-X_{\alpha}$(the discrete variation $X_{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The electrical and optical properties of ZnO are seriously affected by the addition of impurities. The imnurities are added to ZnO in order to increase the electric conductivity of an electrode without losing optical transparency. In this study, the effect of impurities of III and IV family on the band structure, impurity levels and the density of state of ZnO were investigated. The cluster model used for calculations was $[MZn_{50}O_{53}]^{-2}$(M=elements belonging to III and IV family).

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DP-LinkNet: A convolutional network for historical document image binarization

  • Xiong, Wei;Jia, Xiuhong;Yang, Dichun;Ai, Meihui;Li, Lirong;Wang, Song
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제15권5호
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    • pp.1778-1797
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    • 2021
  • Document image binarization is an important pre-processing step in document analysis and archiving. The state-of-the-art models for document image binarization are variants of encoder-decoder architectures, such as FCN (fully convolutional network) and U-Net. Despite their success, they still suffer from three limitations: (1) reduced feature map resolution due to consecutive strided pooling or convolutions, (2) multiple scales of target objects, and (3) reduced localization accuracy due to the built-in invariance of deep convolutional neural networks (DCNNs). To overcome these three challenges, we propose an improved semantic segmentation model, referred to as DP-LinkNet, which adopts the D-LinkNet architecture as its backbone, with the proposed hybrid dilated convolution (HDC) and spatial pyramid pooling (SPP) modules between the encoder and the decoder. Extensive experiments are conducted on recent document image binarization competition (DIBCO) and handwritten document image binarization competition (H-DIBCO) benchmark datasets. Results show that our proposed DP-LinkNet outperforms other state-of-the-art techniques by a large margin. Our implementation and the pre-trained models are available at https://github.com/beargolden/DP-LinkNet.

CT-IGBT의 최적 설계 및 전기적 특성에 관한 분석 (An Analysis on Optimal Design and Electrical Characteristics of CT-IGBT(Circular Trench IGBT))

  • 곽상현;서준호;서인곤;성만영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.22-23
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    • 2008
  • The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the Breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from p base and n drift junction to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction change of current path which pass through reversed layer channel.

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다양한 게이트 구조에 따른 IGBT 소자의 전기적 특성 비교 분석 연구 (A Study Comparison and Analysis of Electrical Characteristics of IGBTs with Variety Gate Structures)

  • 강이구
    • 한국전기전자재료학회논문지
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    • 제29권11호
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    • pp.681-684
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    • 2016
  • This research was carried out experiments of variety IGBTs for industrial inverter and electric vehicle. The devices for this paper were planar gate IGBT, trench gate IGBT and dual gate IGBT and we designed using same design and process parameters. As a result of experiments, the electrical characteristics of planar gate IGBT were 1,459 V of breakdown voltage, 4.04 V of threshold voltage and 4.7 V of on-state voltage drop. And the electrical characteristics of trench gate IGBT were 1,473 V of breakdown voltage, 4.11 V of threshold voltage and 3.17 V of on-state voltage drop. Lastly, the electrical characteristics of dual gate IGBT were 1,467 V of breakdown voltage, 4.14 V of threshold voltage and 3.08V of on-state voltage drop. We almost knew that the trench gate IGBT was superior to dual gate IGBT in terms of breakdown voltage. On the other hand, the dual gate IGBT was better than the trench gate IGBT in terms of on state voltage drop.

Deadbeat Control with a Repetitive Predictor for Three-Level Active Power Filters

  • He, Yingjie;Liu, Jinjun;Tang, Jian;Wang, Zhaoan;Zou, Yunping
    • Journal of Power Electronics
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    • 제11권4호
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    • pp.583-590
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    • 2011
  • Three-level NPC inverters have been put into practical use for years especially in high voltage high power grids. This paper researches three-level active power filters (APFs). In this paper a mathematical model in the d-q coordinates is presented for 3-phase 3-wire NPC APFs. The deadbeat control scheme is obtained by using state equations. Canceling the delay of one sampling period and providing the predictive value of the harmonic current is a key problem of the deadbeat control. Based on this deadbeat control, the predictive output current value is obtained by the state observer. The delay of one sampling period is remedied in this digital control system by the state observer. The predictive harmonic command current value is obtained by the repetitive predictor synchronously. The repetitive predictor can achieve a better prediction of the harmonic current with the same sampling frequency, thus improving the overall performance of the system. The experiment results indicate that the steady-state accuracy and the dynamic response are both satisfying when the proposed control scheme is implemented.

습식 산화를 이용한 원형 트렌치 게이트 IGBT에 관한 연구 (An Analysis of IGBT(Insulator Gate Bipolar Transistor) Structure with an Additional Circular Trench Gate using Wet Oxidation)

  • 곽상현;경신수;성만영
    • 한국전기전자재료학회논문지
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    • 제21권11호
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    • pp.981-986
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    • 2008
  • The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.