• Title/Summary/Keyword: electronic state

Search Result 3,085, Processing Time 0.03 seconds

Electrical Properties of HTS Using Chemical Process (Bi 소결체의 전기적 특성)

  • Lee, Sang-Heon;Choi, Yong;Hong, Jin-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.06a
    • /
    • pp.34-35
    • /
    • 2007
  • A high Tc superconducting with a nominal composition of BSSCCO was prepared by the citarte method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12h is not in the amorphous state as expected but in a crystalline state. X-ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor. After pyrolysis at $400^{\circ}C$ and calcination at $840^{\circ}C$ for 4h. the (001) peak of the high Tc phase was cleary observed.

  • PDF

Lattice Deformation and Electronic Structure of the $C_{60}{^+}$ Cation

  • 이기학;이한명;전희자;박성수;이왕로;Park, T. Y.;Xin Sun
    • Bulletin of the Korean Chemical Society
    • /
    • v.17 no.5
    • /
    • pp.452-457
    • /
    • 1996
  • The effects caused by the ionization on the electronic structure and geometry on C60 are studied by the modified Su-Schriffer-Heeger (SSH) model Hamiltonian. After the ionization of C60, the bond structure of the singly charged C60 cation is deformed from Ih symmetry of the neutral C60 to D5d, C1, and C2, which is dependent upon the change of the electron-phonon coupling strength. The electronic structure of the C60+ cation ground state undergoes Jahn-Teller distortion in the weak electron-phonon coupling region, while self-localized states occur in the intermediate electron-phonon region, but delocalized electronic states appear again in the strong electron-phonon region. In the realistic strength of the electron-phonon coupling in C60, the bond structure of C60+ shows the layer structure of the bond distortion and a polaron-like state is formed.

Nonlinear Dynamics of Orthogonally Polarized Dual-mode Solid-state lasers (서로 수직으로 편광된 이중 모드 고체레이저에 대한 동력학)

  • Park, Jong-Dae;Cho, Chang-Ho
    • The Journal of Natural Sciences
    • /
    • v.17 no.1
    • /
    • pp.39-50
    • /
    • 2006
  • There are two relaxation frequencies in orthogonally polarized dual-mode solid-state lasers. Complex dynamic behaviors such as chaos can be observed by modulating orthogonally polarized dual-mode solid-state lasers. In this paper, we derived Maxwell-Bloch equations by considering anisotropy explicitly in laser-atom interactions and explained the complex nonlinear dynamical behaviors.

  • PDF

A Novel IGBT with Double P-floating layers (두 개의 P-플로팅 층을 가지는 새로운 IGBT에 관한 연구)

  • Lee, Jae-In;Choi, Jong-Chan;Yang, Sung-Min;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.14-15
    • /
    • 2009
  • Insulated Gate Bipolar Transistor(IGBTs) are widely used in power device industry. However, to improve the breakdown voltage, IGBTs are suffered from increasing on-state voltage drop due to structural design. In this paper, the new structure is proposed to solve this problem. The proposed structure has double p-floating layer inserted in n-drift layer. The p-floating layers improve the breakdown voltage compared to conventional IGBT without change of other electrical characteristics such as on-state voltage drop and threshold voltage. this is because the p-floating layers expand electric field distribution at blocking state. A electrical characteristic of proposed structure is analyzed by using simulators such as TSUPREM and MEDICI. As a result, on-state voltage drop and threshold voltage are same to a conventional TIGBT, but breakdown voltage is improved to 16%.

  • PDF

Measurement Time-Delay Error Compensation for Transfer Alignment (전달정렬의 측정치 시간지연 오차보상 기법)

  • Lim, You-Chol;Song, Gi-Won;Lyou, Joon
    • Journal of Institute of Control, Robotics and Systems
    • /
    • v.7 no.11
    • /
    • pp.953-957
    • /
    • 2001
  • This paper is concerned with a transfer alignment method for the SDINS under ship motions. Major error sources of transfer alignment are data transfer time-delay, lever-arm velocity and ship body flexure. Specifically, to reduce alignment errors induced by measurement time-delay effects, the error compensation method through delay state augmentation is suggested. A linearized error model for the velocity and attitude matching transfer alignment system is first derived by linearizing the nonliner measurement equation with respect to its time delay and augmenting the delay state into the conventional linear state equations. And then it is shown via observability analysis and computer simulations that the delay state can be estimated and compensated during ship motions resulting in considerably less alignment errors.

  • PDF

Study on Electric characteristics of Optically Compensated Bend formed initially bend state by Reactive Mesogen monomer (RM 단분자를 이용한 초기 밴드 상태 OCB 셀의 전기적 특성 연구)

  • Jeon, Eun-Jeong;Kim, Seong-Su;Lim, Young-Jin;Lee, Myoung-Hoon;Lee, Seung-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.04a
    • /
    • pp.49-50
    • /
    • 2008
  • OCB mode has advantages such as fast response time and wide viewing angle. But it has inevitable shortcoming which initial splay state must be changed to bend state. To overcoming this problem, OCB cell filled LC with RM monomer was cured by UV when voltage applied. Through previously mentioned methods, even if electric field is none, bend state was made by stabilized LC director. In this paper, we investigated the electric characteristics of polymer stabilized OCB mode.

  • PDF

The Characteristics of Te-light doped S $b_{85}Ge_{15}$Thin Film as Phase Change Optical Recording Media (Te 을 미세 도핑한 S $b_{85}Ge_{15}$ 상변화 기록 박막의 특성)

  • 김종기;김홍석;이영종;정홍배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1997.04a
    • /
    • pp.20-22
    • /
    • 1997
  • In ours study, we investigated the various properties in Te-light doped $Sb_{85}$G $e_{15}$ thin films such as the change of reflectance and transmittance according to phase change from amorphous to crystalline states In all films the transmittance was decreased, but the reflectance was increased by annealing. Particularly, the reflectance between as- deposited state and annealed state showed the largest change in the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film at 780nm, which was about 40% in as-deposited state and about 70% in annealed state. Therefore, it might be considered that the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film is recording medium showing to a good optical properties if it is used to optical recording of the phase change type. change type.ype.

  • PDF

A Study on Diagnosis of Transformers Aging Sate Using Wavelet Transform and Neural Network (이산웨이블렛 변환과 신경망을 이용한 변압기 열화상태 진단에 관한 연구)

  • 박재준;송영철;전병훈
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.14 no.1
    • /
    • pp.84-92
    • /
    • 2001
  • In this papers, we proposed the new method in order to diagnosis aging state of transformers. For wavelet transform, Daubechies filter is used, we can obtain wavelet coefficients which is used to extract feature of statistical parameters (maximum value, average value, dispersion skewness, kurtosis) about each acoustic emission signal. Also, these coefficients are used to identify normal and fault signal of internal partial discharge in transformer. As improved method for classification use neural network. Extracted statistical parameters are input into an back-propagation neural network. The number of neurons of hidden layer are obtained through Result of Cross-Validation. The network, after training, can decide whether the test signal is early aging state, alst aging state or normal state. In quantity analysis, capability of proposed method is superior to compared that of classical method.

  • PDF

Numerical Analysis on the Electrical Characteristics of FS TIGBT

  • Lee, Jong-Seok;Kang, Ey-Goo;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.11a
    • /
    • pp.63-64
    • /
    • 2006
  • Here we present detailed simulation results of trench field stop IGBTs. Besides the reduced on-state voltage drop there is also an Increase of forward blocking voltage. A trench gate IGBT has low on-state voltage drop mainly due to the removal of the JFET region and a field stop IGBT has high forward blocking voltages due to the trapezoidal field distribution under blocking condition. We have simulated the static characteristics of TIGBT with field stop technology by 2D simulator(MEDICI). The simulated result of forward blocking voltage and on-state voltage drop is about 1,408V and 1.3V respectively at $110{\mu}m$ N-drift thickness.

  • PDF

All Solid State Electrochromic (전 고체형 일렉트로크로믹 소자)

  • 채종우;조봉희;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1996.05a
    • /
    • pp.295-298
    • /
    • 1996
  • In this study, we have fabricated all solid state electrochromic devices using WO$_3$ film as the working electrode, V$_2$O$\_$5/ film as the counter electrode and PEO-LiClO$_4$-PC film as the solid electrolyte. The WO$_3$ thin films for working electrode and V$_2$O$\_$5/ thin films for counter electrode were deposited onto ITO glass by vacuum evaporation and were shown good electrochromic and state properties after 1x10$\^$5/ cycles. PEO-LiClO$_4$-PC polymer electrolyte can easily be formed into thin films, do not absorb in the visible region of the light. Therefore, such electrolyte have electrochromic properties suitable for large-scale all solid-state electrochromic devices. All solid-staeelectrochromic devices fabricated in this polymer electrolyte have optical modulation of 20%∼30% at 1.5 V.

  • PDF