• Title/Summary/Keyword: electronic charge distribution

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Microstructure and Electrical Properties of SnO2 Thin Films Grown by Thermal CVD Method (열 CVD법으로 증착된 SnO2 박막의 미세구조와 전기적 특성)

  • Jeong, Jin;Choi, Seong-Pyung;Shin, Dong-Chan;Koo, Jae-Bon;Song, Ho-Jun;Park, Jin-Seoung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.5
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    • pp.441-447
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    • 2003
  • When a SnO$_2$ thin film was deposited by thermal CVD, two different types of growth behavior that were dependent on the deposition temperature were observed. The film grown at 475$^{\circ}C$ had a wide grain size distribution and a faceted surface shape. On the other hand, the film grown at 5$25^{\circ}C$ had a relatively narrow grain size distribution and a rounded sulfate shape. The aspects of grain shape and growth behavior agree well with the theory of gram growth and a roughening transition. The charge tarrier density decreased with deposition time. According to photoluminescence measurements, the peak intensity of the spectra occurred at approximately 2.5 eV, which is related to oxygen vacancies, and decreased with increasing of deposition time. These measurement results suggest that the number of oxygen vacancies, which is related to the electrical conductivity, decrease with deposition time.

Optical Monte Carlo Simulation on Spatial Resolution of Phosphor Coupled X-ray Imaging Detector (형광체 결합형 X선 영상검출기의 공간 해상력 몬테카를로 시뮬레이션)

  • Kang, Sang-Sik;Kim, So-Yeong;Shin, Jung-Wook;Heo, Sung-Wook;Kim, Jae-Hyung;Nam, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.328-328
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    • 2007
  • Large area matrix-addressed image detectors are a recent technology for x-ray imaging with medical diagnostic and other applications. The imaging properties of x-ray pixel detectors depend on the quantum efficiency of x-rays, the generated signal of each x-ray photon and the distribution of the generated signal between pixels. In a phosphor coated detector the light signal is generated by electrons captured in the phosphor screen. In our study we simulated the lateral spread distributions for phosphor coupled detector by Monte Carlo simulations. Most simulations of such detectors simplify the setup by only taking the conversion layer into account neglecting behind. The Monte Carlo code MCNPX has been used to simulate the complete interaction and subsequent charge transport of x-ray radiation. This has allowed the analysis of charge sharing between pixel elements as an important limited factor of digital x-ray imaging system. The parameters are determined by lateral distribution of x-ray photons and x-ray induced electrons. The primary purpose of this study was to develop a design tool for the evaluation of geometry factor in the phosphor coupled optical imaging detector. In order to evaluate the spatial resolution for different phosphor material, phosphor geometry we have developed a simulation code. The developed code calculates the energy absorption and spatial distribution based on both the signal from the scintillating layer and the signal from direct detection of x-ray in the detector. We show that internal scattering contributes to the so-called spatial resolution drop of the image detector. Results from the simulation of spatial distribution in a phosphor pixel detector are presented. The spatial resolution can be increased by optimizing pixel size and phosphor thickness.

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Calculation on Electronic State and Chemical Bonding of $\beta$-$MnO_2$ by DV-X$\alpha$ Method (분자궤도계산법에 의한 $\beta$-$MnO_2$의 전자상태 및 화학결합 계산)

  • 이동윤;김봉서;송재성;김현식
    • Korean Journal of Crystallography
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    • v.14 no.1
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    • pp.16-23
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    • 2003
  • The electronic structure and chemical bonding of β-MnO₂ were theoretically investigated by DV-X/sub α/ (the discrete variation X/sub α/) method. which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The calculations on several cluster models having different sizes were carried out for the determination of a model suited for analyzing bulk state. The Mn/sub 15/O/sub 56/ model was selected as a sufficiently suitable model for the calculation of electronic state and chemical bonding by the comparison of the calculated XPS (X-ray photo-electron spectrum) and experimentally measured XPS. By using this model, the electron energy level, the density of state, the bond overlap population, the charge density distribution, and the net ionic transfer between cations and anions were calculated and discussed.

First Principles Study on Hydrolysis of Hazardous Chemicals PCl3 and POCl3 Catalyzed by Water Molecules (제일원리 계산을 통한 유해화학물질 PCl3와 POCl3의 물분자 촉진 수화반응 연구)

  • Jeong, Hyeon-Uk;Gang, Jun-Hui;Jeon, Ho-Je;Han, Byeong-Chan
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.126-126
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    • 2017
  • Using first principles calculations we unveil fundamental mechanism of hydrolysis reactions of two hazardous chemicals $PCl_3$ and $POCl_3$ with molecular water clusters nearby. It is found that the water molecules play a key role as a catalyst significantly lowing the activation barriers by transferring its protons to the reaction intermediates. Interestingly, torsional angles of molecular complexes at transition states are identified as a vital descriptor on the reaction rate. Analysis of charge distribution over the complexes further reinforces the finding with atomic level correlation between the torsional angle and variation of the orbital hybridization state of P in the complex. Electronic charge separation (or polarization) enhances thermodynamic stability of the activated complex at transition state and reduces the activation energy through hydrogen bonding network with water molecules nearby. Calculated potential energy surfaces (PES) for the hydrolysis reactions of $PCl_3$ and $POCl_3$ depict their two contrastingly different profiles of double- and triple-deep wells, respectively. It is ascribed to the unique double-bonding O=P in the $POCl_3$. Our results on the activation free energy show well agreements with previous experimental data within $7kcalmol^{-1}$ deviation.

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A Study on the DC and Impulse Breakdown Performances of PPLP Insulation in Liquid Nitrogen for DC Applications

  • Kim, W.J.;Kim, H.J.;Cho, J.W.;HwangBo, S.;Kim, S.H.
    • Progress in Superconductivity and Cryogenics
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    • v.14 no.4
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    • pp.32-35
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    • 2012
  • A high-$T_c$ superconducting (HTS) DC application has advantages such as the ultimately lower loss, more compact dimensions, and large capacity compared to AC application. In order to optimize the insulation design of a HTS DC machines, it is important to understand the high voltage insulation and materials at cryogenic temperature. Polypropylene laminated paper (PPLP) has been widely used as an insulating material for HTS AC machines. However, the fundamental data under DC voltage have not been revealed satisfactorily until now. In this paper, we will discuss mainly on the breakdown and dielectric characteristics of PPLP in liquid nitrogen ($LN_2$). The polarity effects of DC and impulse voltage were studied by using the semi-rod to cylindrical electrode. The volume resistivity of PPLP in $LN_2$ was studied. Also, the space charge distribution at room temperature was studied. However, it is necessary to study this topic at cryogenic temperature in the near future.

Silicon Electro-optic Orbital Angular Momentum Sign Modulator for Photonic Integrated Circuit (광 집적회로용 실리콘 기반 궤도 각운동량 부호 변환기)

  • Lee, In-Joon;Kim, Sang-In
    • The Journal of the Korea institute of electronic communication sciences
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    • v.15 no.4
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    • pp.659-664
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    • 2020
  • In this paper, we propose a silicon-based electro-optic (EO) modulator which can modulate a sign of a topological charge number l of |l|=1 orbital angular momentum (OAM) mode. The proposed EO modulator consists of position-dependent doped Si waveguide core and undoped SiO2, cladding, which enables control of the effective index and propagation loss of two OAM constitutive eigenmodes. The modulator functions as OAM mode maintaining waveguide at -0.33V and as topological charge sign inverter at 10V. The output OAM mode purity is calculated through electric field distribution, showing high purity of |l|>0.92 in both cases.

Effect of Transition Metal Dopant on Electronic State and Chemical Bonding of MnO2 (MnO2의 전자상태 및 화학결합에 미치는 천이금속 첨가의 효과)

  • 이동윤;김봉서;송재성;김양수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.7
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    • pp.691-696
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    • 2004
  • The electronic state and chemical bonding of $\beta$-MnO$_2$ with transition metal dopants were theoretically investigated by DV-X$_{\alpha}$ (the discrete variational X$_{\alpha}$) method, which is a sort of the first principles molecular orbital method using the Hartree-Fock-Slater approximation. The calculations were performed with a $_Mn_{14}$ MO$_{56}$ )$^{-52}$ (M = transition metals) cluster model. The electron energy level, the density of states (DOS), the overlap population, the charge density distribution, and the net charges, were calculated. The energy level diagram of MnO$_2$ shows the different band structure and electron occupancy between the up spin states and down spin states. The dopant levels decrease between the conduction band and the valence band with the increase of the atomic number of dopants. The covalency of chemical bonding was shown to increase and ionicity decreased in increasing the atomic number of dopants. Calculated results were discussed on the basis of the interaction between transition metal 3d and oxygen 2p orbital. In conclusion it is expected that when the transition metals are added to MnO$_2$ the band gap decreases and the electronic conductivity increases with the increase of the atomic number of dopants. the atomic number of dopants.

The effect of film morphology by bar-coating process for large area perovskite solar modules

  • Ju, Yeonkyeong;Kim, Byeong Jo;Lee, Sang Myeong;Yoon, Jungjin;Jung, Hyun Suk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.416-416
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    • 2016
  • Organic-inorganic metal halide perovskite solar cells have received attention because it has a number of advantages with excellent light harvesting, high carrier mobility, and facile solution processability and also recorded recently power conversion efficiency (PCEs) of over 20%. The major issue on perovskite solar cells have been reached the limit of small area laboratory scale devices produced using fabrication techniques such as spin coating and physical vapor deposition which are incompatible with low-cost and large area fabrication of perovskite solar cells using printing and coating techniques. To solution these problems, we have investigated the feasibility of achieving fully printable perovskite solar cells by the blade-coating technique. The blade-coating fabrication has been widely used to fabricate organic solar cells (OSCs) and is proven to be a simple, environment-friendly, and low-cost method for the solution-processed photovoltaic. Moreover, the film morphology control in the blade-coating method is much easier than the spray coating and roll-to-roll printing; high-quality photoactive layers with controllable thickness can be performed by using a precisely polished blade with low surface roughness and coating gap control between blade and coating substrate[1]. In order to fabricate perovskite devices with good efficiency, one of the main factors in printed electronic processing is the fabrication of thin films with controlled morphology, high surface coverage and minimum pinholes for high performance, printed thin film perovskite solar cells. Charge dissociation efficiency, charge transport and diffusion length of charge species are dependent on the crystallinity of the film [2]. We fabricated the printed perovskite solar cells with large area and flexible by the bar-coating. The morphology of printed film could be closely related with the condition of the bar-coating technique such as coating speed, concentration and amount of solution, drying condition, and suitable film thickness was also studied by using the optical analysis with SEM. Electrical performance of printed devices is gives hysteresis and efficiency distribution.

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Electrical characteristic and surface morphology of IBE-etched Silicon (이온빔 에칭된 실리콘의 전기적 특성 및 표면 morphology)

  • 지희환;최정수;김도우;구경완;왕진석
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.279-282
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    • 2001
  • The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

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The Electric Field Distribution Characteristic Of Outdoor ECT Using the Preventive Diagnostic Sensor (예방진단센서가 내장된 옥외용 ECT의 전계분포특성)

  • Lee, Han-Joo;Cho, Sung-Hoon;Jung, Eui-Hwan;Yoon, Jae-Hoon;Lim, Kee-Joo;Kang, Sung-Hwa
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03b
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    • pp.27-27
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    • 2010
  • The exact partial discharge pulse should be measured in order to estimate the discharge source in the solid insulation and diagnose the degree of deterioration. Partial discharges generated in the insulation occur in the internal voids or at the edge of the insulation, have unique characteristics following the type and location. When external voltage is applied, Partial discharges occurred in the restrictively presented voids increase the quantity of electrical charge at the discharge onset voltage. The discharge characteristics have remained constant as space is filled by the impurity such as a compound of gases accompanied with discharge. In this study, How to design the insulation about the problems of the built-in diagnostics in the transformer is discussed by the interpretation of electric field.

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