• 한국산학경영학회:학술대회논문집
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• 2004.11a
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• pp.4-22
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• 2004

The Internet provides a new distribution channel of digital contents for conventional media firms such as newspaper, magazine and encyclopedia publishers and broadcasting companies with very low marginal production and distribution cost. In comparison to traditional offline channel, there have been various revenue models in online content markets such as advertising model, subscription model, affiliation fee model, etc. In the earlier of the Internet era, most of online content firms provided their services free in order to boost offline revenue or they depend on advertising revenue sources in lieu of attaining revenue from their contents. However, as many online content firms are confronted with many difficulties in attaining revenues from online advertising model, they began to charge their contents. This paper shows why they charge their contents and explores entry conditions when conventional firms enter online content markets. And also this paper discusses managerial implications related to pricing strategies in online content markets.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.208-212
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• 2011

In this work, the calculated nuclear quadrupole coupling constants of $^{17}O$ in some styrylquinoline conformers were presented. The calculations were carried out to find the relationships between the charge distribution of styrylquinolines and their pharmaceutical behavior and to explore the differences among the electronic structures of some conformers of these potent HIV IN inhibitors. Furthermore, the HIV IN inhibitory of R1 and R2 rotamers was compared. On the basis of our results: - Charge density on oxygen atoms of carboxyl moiety has a dominant role in the drug activity. - The a conformer in which a divalent hydrogen atom is a link, has more capability in antiviral drug treatment. - The R1 conformer, as a $Mg^{+2}$ chelating agent, is better than R2 conformer and thus it is more inhibitor of HIV IN.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.14-17
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• 1992

To analyze Nonvolatile SNOSFET(polySilicon-Nitride-Oxide-Semiconductor Field Effect Transistor) memory device, two dimensional numerical computer simulation program was developed. The equation discretization was performed by the Finite difference method and the solution was derived by the Iteration method. The doping profile of n-channel device which was fabricated by 1Mbit CMOS process was observed. The electrical potential and the carrier concentration distribution to applied bias condition were observed in the inner of a device. As a result of the write and the erase to memory charge quantity, the threshold voltage shift is expected. Therefore, without device fabrication, the operating characteristics of the device was observed under various the processing and the operating condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.368-368
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• 2008

Ion implantation has been widely developed during the past decades to become a standard industrial tool. To comply with the growing needs in ion implantation, innovative technology for the control of ion beam parameters is required. Beam current, beam profile, ion fractions are of great interest when uniformity of the implant is an issue. Especially, it is important to measure the spatial distribution of beam power and also the energy distribution of accelerated ions. This energy distribution is influenced by the proportion of mass for ion in the plasma generator(ion source) and by charge exchange and dissociation within the accelerator structure and also by possible collective effects in the neutralizer which may affect the energy and divergence of ions. Hydrogen atom has been the object of a good study to investigate the energy distribution. Hydrogen ion sources typically produce multi-momentum beams consisting of atomic ion ($H^+$) and molecular ion ($H_2^+$ and $H_3^+$). In the beam injector, the molecular ions pass through a charge-exchanges gas cell and break up into atomic with one-half (from $H_2^+$) or one-third (from $H_3^+$) according to their accelerated energy. Burrell et al. have observed the Doppler shifted lines from incident $H^+$, $H_2^+$, and $H_3^+$ using a Doppler shift spectroscopy. Several authors have measured the proportion of mass for hydrogen ion and deuterium using an ion source equipped with a magnetic dipole filter. We developed an ion implanter with 50-KeV and 20-mA ion source and 100-keV accelerator tube, aiming at commercial uses. In order to measure the proportion of mass for ions, we designed a filter system which can be used to measure the ion fraction in any type of ion source. The hydrogen and helium ion species compositions are used a filter system with the two magnets configurations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.314-317
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• 2002

Since the early work of Tersoff and Hamann on the theory of the scanning tunneling microscope (STM), many theoretical approaches have been developed in order to gain further physical insight into the real space image that this technique provides. In this Paper, the STM image of Carbon nanotubes (CNT's) was calculated through the theoretical study. The optimized structure of CNT's was simulated using Brenner's hydrocarbon potential. The structure of simulation is (5. 5) armchair CNT and (10. 0) zigzag CNT. Also we have used that the extended Huckel tight binding (EHTB) theory already provides a fairly good qualitative description of the main processes that control the final contrast in the STM image. we found that the shape of the calculated images is hardly dependent on the exact electronic charge distribution at the surface. The STM images are not too sensitive to the precise electronic structure but, rather, they reflect its qualitative features. As a result of the simulation, The STM images of CNT's and the electronic density distribution were investigated. It found that the EHTB theory is appropriate for STM image calculation and that the STM images are in agreement with the result of Experiment.

• Transactions on Electrical and Electronic Materials
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• v.11 no.1
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• pp.42-47
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• 2010

Polymer insulating materials such as cross linked polyethylene (XLPE) are employed in electric cables used for extra high voltage. These materials can degrade due to chemical, mechanical and electric stress, possibly caused by voids, the presence of extrinsic materials and protrusions. Therefore, this study measured discharge patterns, discharge phase angle, quantity and occurrence frequency as well as changes in XLPE under different temperatures and applied voltages. To quantitatively analyze the irregular partial discharge patterns measured, the discharge patterns were examined using a statistical program. A three layer sample was fabricated, wherein the upper and lower layers were composed of non-void XLPE, while the middle layer was composed of an air void and copper particles. After heating to room temperature and $50^{\circ}C$ and $80^{\circ}C$ in silicone oil, partial discharge characteristics were studied by increasing the voltage from the inception voltage to the breakdown voltage. Partial discharge statistical analysis showed that when the K-means clustering was carried out at 9 kV to determine the void discharge characteristics, the amount discharged at low temperatures was small but when the temperature was increased to $80^{\circ}C$, the discharge amount increased to be 5.7 times more than that at room temperature because electric charge injection became easier. An analysis of the kurtosis and the skewness confirmed that positive and negative polarity had counterclockwise and clockwise clustering distribution, respectively. When 5 kV was applied to copper particles, the K-means was conducted as the temperature changed from $50^{\circ}C$ to $80^{\circ}C$. The amount of charge at a positive polarity increased 20.3% and the amount of charge at a negative polarity increased 54.9%. The clustering distribution of a positive polarity and negative polarity showed a straight line in the kurtosis and skewness analyses.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.271-277
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• 2022

We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the N_it distribution using TCAD simulation. As interface trap number density (N_it) increased, the threshold voltage increased while the drain current density decreased. Under N_it=5.0×10¹⁰ cm^-2 condition, the threshold voltage was 3.2 V for V_DS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the N_it distribution type, there was an increase in the subthreshold swing (SS) following an increase in N_it. Under U-shaped N_it distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Q_f) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.495-498
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• 2001

The distribution line through which electricity is supplied from substation to customer generally varies by underground line and overhead line. In contrast that the underground line is shielded, the overhead lines do not have the shield layer. To overcome this weak point of the overhead lines, the aerial bundled cable(ABC) connection systems have been developed. The basic concept of the ABC connection system is the application of the underground cable system containing complete shield layer to the overhead cable system. The ABC system is the innovative technologies which enable the prevention of electric shocks, reduction of the maintenance charge and damage of the cable. This paper give a full detail of vertical connection system applied within a country.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.265-269
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• 1996

In this paper, electric field interference was analyzed in the Printed Circuit Board to restrain the elcctromagnetic wave using Boundary Element Method and Finite Element Method. First, charge density distribution was simulated using Boundary Element Method and the characteristic impedance was caculated to restrain the reflex wave, and mutual capacitance was caculated in the multi-strip line PCB. Finally, electric field was simulated in the variable patterns using Finite Element Method. As a result, the optimal structure and characteristics of strip line was obtained and the imformations about the optimal design pattern could be obtained with the analysing the feild distribution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.260-264
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• 1996

In this study, the dieiectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability . As a result. first of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature, and the breakdown strength of specimens because it is believed that the adding filler farms interface and charge is accumulated in it, therefore the molecular motility is raised, the electric field is concentrated, and the acceleration of electron and the growth of electron avalanche are early accomplished. In the case of filled specimens with treating silane, the breakdown strength become much higher since the suggests that silane coupling agent improves interfacial combination and relays electric field concentration. Finally, from the analysis 7f weibull distribution. it was confirmed that as the allowed breakdown probability was given by 0.11[%].