• 반도체디스플레이기술학회지
• /
• 제20권3호
• /
• pp.32-38
• /
• 2021

We developed an inductively coupled plasma (ICP) etcher for GaN etching using a parallel plasma electrode source with a multifunctional chuck matched to it in order for the low power consumption and low process cost in comparison with the conventional ICP system with a helical-type plasma electrode source. The optimization process condition using it for the micro light-emitting diode (µ-LED) chip fabrication was established, which is an ICP RF power of 300 W, a chuck power of 200 W, a BCl₃/Cl₂ gas ratio of 3:2. Under this condition, the mesa structure with the etch depth over 1 ㎛ and the etch angle over 75° and also with no etching residue was obtained for the µ-LED chip. The developed ICP showed the improved values on the process pressure, the etch selectivity, the etch depth uniformity, the etch angle profile and the substrate temperature uniformity in comparison with the commercial ICP. The µ-LED chip fabricated using the developed ICP showed the similar or improved characteristics in the L-I-V measurements compared with the one fabricated using the conventional ICP method

• 한국재료학회지
• /
• 제33권6호
• /
• pp.229-235
• /
• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• 한국전자파학회논문지
• /
• 제20권4호
• /
• pp.406-412
• /
• 2009

본 연구에서는 주변 환경이 복잡하고 토양의 특성이 잘 알려지지 않은 지역에서는 적용이 가능한 중파대역 유효 대지 도전율 계산법을 제안하였다. 제안된 방법은 해안 기지국에서 측정된 전계 강도와 일반적인 중파대역 감쇠 모델을 이용하여 유효 대지 도전율을 계산하며, 오차를 최소화하기 위해 통계적인 방법을 이용하였다. 다음으로, 제안된 방법을 이용하여 국내의 중파대역 유효 대지 도전율을 얻었으며, 전계 강도 비교 및 오차 분석을 통해 제안된 방법의 정확도와 유용성을 확인하였다.

• 한국전자통신학회논문지
• /
• 제10권9호
• /
• pp.965-972
• /
• 2015

본 논문은 송지호 재첩서식의 적지선정을 위한 방법에 대해 살펴본다. 수차례에 걸쳐 현장탐사와 시료채취를 통한 수질검사로 수집된 자료를 지리정보시스템(GIS)을 이용하여 분석하였다. 송지호의 재첩 서식환경의 특성을 파악하기 위해 수온, 염분, 용존산소 농도, PO4-P 농도를 활용하였다. 본 연구는 서식환경이 유사한 여타 석호 등에서 재첩 증식의 기초자료로 활용할 수 있을 것으로 기대된다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
• /
• pp.200-202
• /
• 2006

A impedance model simulating the electrical characteristics of the Electrodeless fluorescent lamp operated at high frequency is proposed. The model is constructed from a two parameter equation which is derived based on a set of two measurements. This is a readily constructed and computer simulator oriented model which is suitable for a preliminary design of electronic ballasts. Simulated and experimental results are used to verify the analytical discussions, and moreover, an electronic ballast design example using the proposed model is presented to further demonstrate ist applications.

• 한국전기전자재료학회논문지
• /
• 제21권7호
• /
• pp.599-602
• /
• 2008

Growth of well-aligned ZnO nanostructures on various substrates such as GaN, ITO/glass, and sapphire was realized via a simple aqueous solution method at low temperature of $90^{\circ}C$. Morphology of ZnO nanostructures grown on various substrates as function of substrate was studied. It was found that ZnO nanostructures is a strong function of substrate. It was clearly observed that the morphology of ZnO nanostructures could be varied by change of substrate. Morphology, crystallinity, and crystal characteristics were carried out by FE-SEM, synchrotron x-ray scattering measurements, and high-resolution electron microscopy, respectively.

• Journal of Electrical Engineering and Technology
• /
• 제6권4호
• /
• pp.539-542
• /
• 2011

Thin-film transistors (TFTs) are fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel layer by rf-magnetron sputtering. Oxygen partial pressure significantly changed the transfer characteristics of a-IGZO TFTs. Measurements performed on a-IGZO TFT show the change of threshold voltage in the transistor channel layer and electrical properties with varying $O_2$ ratios. The device performance is significantly affected by adjusting the $O_2$ ratio. This ratio is closely related with the modulation generation by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

• 한국전기전자재료학회논문지
• /
• 제18권9호
• /
• pp.870-875
• /
• 2005

We measured the optogalvanic signal and discharge voltage-current(V-I) curve under the two different discharge conditions with different buffer gases, Ar, and Ne. When the Gd was used as a cathode material at low discharge current less than 10mA, a significant change was observed in the current-voltage curve. Time resolved optogalvanic signal measurement were measured by the diode laser of which wavelengths correspond to metastable transition line of these gases (Ar, Ne). From these measurements, we found that the characteristics of the V-I curve strongly depend on the Penning ionization process.

• 한국전기전자재료학회논문지
• /
• 제19권4호
• /
• pp.328-333
• /
• 2006

In this paper, we developed a pressure measurement apparatus with the parallel structure to improve the measurement efficiency of pressure sensors by reducing the measurement time of pressure. The developed system has two parallel positions for loading Silicon pressure sensor and has a dual valve structure. The semiconductor pressure sensors prepared by Copal Electronics were used to confirm the performance of the developed measurement system. Two stage differential amplifier circuit was employed to amplify the weak output signal and the amplified output signal was improved utilizing a low-pass filter. New apparatus shows the measurement time of pressure two times shorter than that of conventional one with the serial structure, while both structures show the similar linear output versus pressure characteristics.

• 한국전기전자재료학회논문지
• /
• 제18권3호
• /
• pp.199-205
• /
• 2005

Polycrystalline cadmium sulfide(CdS) thin films were deposited on glass substrate by chemical bath deposition(CBD) and vacuum evaporation (VE) techniques. VE-CdS films consisted primarily of hexagonal phase, whereas CBD CdS films containing primarily the cubic form. VE-grown films were shown to have better crystallinity than CBD-grown films. The grain size of the CBD films is smaller than the ones of VE films. VE-CdS films exhibited relatively high transmittance in the above-gap region and band gap compared with CBD films. However, CdTe solar cells with these low quality CBD-CdS layers yield higher and more stable characteristics. Current-voltage-temperature measurements showed that the current transport for both cells was controlled by both tunneling and interface recombination but the cells with CBD-CdS displayed less tunneling.