• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.6-12
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• 1995

High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.57-57
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• 2009

In this work, we carried out the variation of surface characteristics of organic polymer films by O2 plasma. The plasma diagnostics were performed by DLP(Double Langmuir Probe) and OES(Optical Emission Spectroscopy) measurements. Moreover, variation of surface characteristics were measured by AFM(Atomic Force Microscope), XPS(X-ray Photoelectron Spectroscopy), and contact angle goniometer. It was found that the etch rate of organic films was controlled by O radicals flux and dc bias voltage. And O radical density and dc bias voltage increased with increasing bias power. So, it was changed surface energy as a function of surface roughness and O/C ratio in organic films.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.53-57
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• 2012

In this paper, by designing 20 W class driving circuit for driving high-power LED (Light Emitting Diode), we are going to comparatively carry out the analysis of characteristics for power circuit according to each design method. In this case, 200 V 60 Hz was performed as input data. The electrical characteristics such as voltage, current and ripple are checked for constant current circuit and constant voltage circuit in the LED module. In addition, as the ripple has an influence on illumination of LED light, low temperature working (-20 [$^{\circ}C$]) and high temperature working(80 [$^{\circ}C$]) are measured to make sure the ripple characteristics in accordance with temperature. In low temperature operation -20 [$^{\circ}C$] measurements, both constant current circuit and constant-voltage circuit were less impacted on input fluctuation, whereas in the high temperature operation 80 [$^{\circ}C$], current voltage in constant voltage circuit was surge after 430 [hour]. Voltage current ripple of constant current circuit was much less than constant voltage circuit, therefore we can show that constant current circuit is more stable.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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• pp.78-81
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• 1988

Nitroxide films were made from the $NH_3$ gas nitridation of as-grown $SiO_2$. The electrical characterization results including C-V characteristics and BT stress generally indicate that the high field stress instability and insulator-substrate interfacial characteristics are improved by nitridation of $SiO_2$. A C-V technique was used to determine the surface state density $N_{55}$ and then $N_{55}$ in the nitroxide-substrate interface was $8{\times}10(/eVcm^2$). This $N_{55}$ is related with 1/f noise was revealed experimentally and relationship was plotted and 1/f noise characteristics were also improved by nitridation of of $SiO_2$By the results of measurements on these films show that very thin thermal silicon nitroxide films can be used as gate dielectrics for future highly scaled-down VLSI device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.247-248
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• 2008

The etching characteristics of Titanium Nitride (TiN) and etch selectivity of TiN to $SiO_2$ and $HfO_2$ in $CH_4$/Ar plasma were investigated. It was found that TiN etch rate shows a non-monotonic behavior with increasing both Ar fraction in $CH_4$ plasma, RF power, and gas pressure. The maximum TiN etch rate of nm/min was obtained for $CH_4$ (80%)/Ar(20%) gas mixture. The plasmas were characterized using optical emission spectroscopy (OES) analysis measurements. From these data, the suggestions on the TiN etch characteristics were made.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

• 한국전기전자재료학회논문지
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• 제32권4호
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• pp.263-266
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• 2019

In the Airport Railroad, the Yeongjong Bridge has a length of 4,420 m and connects Yeongjong Island with the mainland of Incheon City. The bridge is a two-level structure, consisting of a six-lane road at the upper level and a combination of a road and railroad at the lower level. The environmental conditions for the electric railway come mainly from the salt injury area and a heavy industry zone, and the maintenance cycles are determined differently depending on these conditions. This study analyzed the deterioration characteristics of long rod insulators produced with a movable ceramic bracket and polymer materials in the Yeongjong Bridge section of the Airport Railway operating in the salt injury area according to the material characteristics. Comparison of the corona measurements when the insulators were cleaned at the same time showed that the polymer insulator had a higher insulation performance than the ceramic insulator.

• 한국전자파학회논문지
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• 제20권1호
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• pp.37-44
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• 2009

본 논문에서는 TRS(Trunked Radio System: $806{\sim}866\;MHz$) 대역의 전후방비 특성이 우수한 이동통신 기지국용 배열 안테나를 제안하였다. 제안된 배열 안테나는 양호한 전후방비 특성을 갖도록 후면에 캐비티를 둔 마이크로스트립 다이폴 안테나를 복사 소자로 하고, 이를 $5{\times}3$ 배열한 안테나이다. 제안된 안테나의 타당성을 보이기 위하여 $5{\times}3$ 배열 안테나를 설계 제작하고 복사 특성을 측정하였다. 복사 특성 측정 결과, 제안된 배열 안테나는 사용 주파수 범위에서 이득 13.3 dBi 이상, 전후방비 40 dB 이상을 갖는 것으로 나타났다. 이로서 본 논문에서 제안된 배열 안테나는 후방 로브 특성이 우수한 기지국 안테나로 널리 이용될 수 있음이 확인되었다.

• 전기학회논문지
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• 제64권12호
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• pp.1730-1736
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• 2015

This paper presents a 16-channel transimpedance amplifier (TIA) array implemented in a standard $0.18-{\mu}m$ CMOS technology for the applications of panoramic scan LADAR (PSL) systems. Since this array is the front-end circuits of the PSL systems to recover three dimensional image for unmanned vehicles, low-noise and high-gain characteristics are necessary. Thus, we propose a voltage-mode inverter TIA (I-TIA) array in this paper, of which measured results demonstrate that each channel of the array achieves $82-dB{\Omega}$ transimpedance gain, 565-MHz bandwidth for 0.5-pF photodiode capacitance, 6.7-pA/sqrt(Hz) noise current spectral density, and 33.8-mW power dissipation from a single 1.8-V supply. The measured eye-diagrams of the array confirm wide and clear eye-openings up to 1.3-Gb/s operations. Also, the optical pulse measurements estimate that the proposed 16-channel TIA array chip can detect signals within 20 meters away from the laser source. The whole chip occupies the area of $5.0{\times}1.1mm^2$ including I/O pads. For comparison, a current-mode 16-channel TIA array is also realized in the same $0.18-{\mu}m$ CMOS technology, which exploits regulated-cascode (RGC) input configuration. Measurements reveal that the I-TIA array achieves superior performance in optical pulse measurements.

• Journal of Korean Society for Atmospheric Environment
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• 제20권E2호
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• pp.69-75
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• 2004

In this study, thin film gas sensor based on tin oxide was fabricated to examine its characteristics. Target gas is acetonitrile ($CH_3$CN) which is a blood simulant for the chemical warfare agent. Sensing materials are SnO$_2$ SnO$_2$/Pt, and Sn/Pt with thickness from 1000 to 3000 $\AA$. The sensor consists of a sensing electrode with inter-digit (IDT) type in front side and a heater in rear side. Resistance changes of sensing materials are monitored on real time basis using a data acquisition board with a 12-bit analog to digital converter. Sensitivities are measured at different operating temperatures also with different gas concentrations and film thickness. The high sensitivity is obtained for Sn (3000 $\AA$)/Pt (30 $\AA$) at 30$0^{\circ}C$ for 3 ppm. Response and recovery times were about 40 and 160 s, respectively. Repetition measurements showed very good results with $\pm$3% in full scale range.