• Progress in Superconductivity and Cryogenics
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• v.19 no.1
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• pp.1-4
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• 2017

Forefront ultrafast experimental techniques have recently proven their potential as new approaches to understand materials based on non-equilibrium dynamics in the time domain. The time domain approach is useful especially in disentangling complicated coupling among charge, spin and lattice degrees of freedom. Various ultrafast experiments on Fe-based superconductors have observed strong coherent oscillations of an $A_{1g}$ phonon mode of arsenic ions, which shows strong coupling to the electronic and magnetic states. This paper reviews the recent reports of ultrafast studies on Fe-based superconductor with a focus on the coherent oscillations. Experimental results with ultrashort light sources from the terahertz-infrared pulses to the hard X-rays from a free electron laser will be presented.

• Journal of Magnetics
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• v.16 no.4
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• pp.408-412
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• 2011

We investigated theoretically the magnetic field dependence of the quantum optical transition of qusi 2-Dimensional Landau splitting system, in GaN and ZnO. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). Through the analysis of this work, we found the increasing properties of the optical Quantum Transition Line Shapes(QTLSs) which show the absorption power and the Quantum Transition Line Widths(QTLWs) with the magnetic-field in GaN and ZnO. We also found that QTLW, ${\gamma}(B)_{total}$ of GaN < ${\gamma}(B)_{total}$ of ZnO in the magnetic field region B < 25 Tesla.

• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.9-12
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• 2019

We performed Raman spectroscopy on two different over-doped Bi₂Sr₂CaCu₂O_8+x (BSCCO), of which superconducting transition temperatures are 89 K and 77 K. Line-shape analysis of the Raman-spectrum was done, focused on B_1g bond buckling mode which have drawn a lot of attention, since photoemission studies showed an evidence for strong coupling between the mode and electron. The line-shapes show asymmetry and are well fitted by the Fano line-shape formula. Remarkably, we found that the peak line-widths from B_1g bond buckling mode in BSCCO show much broader than those in YBa₂Cu₃O_7-x. The broad line width can be attributed to the superstructure modulation of BSCCO. Our results imply that B_1g bond buckling mode may have close relation to the origin of superconductivity or to boosting the superconducting transition temperature in BSCCO.

• Progress in Superconductivity
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• v.12 no.2
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• pp.104-109
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• 2011

We have investigated the anisotropy of the superconducting properties for $CaC_6$ and $SrC_6$ using upper critical fields ($H_{c2}$) and specific heat ($C_p$). From the upper critical fields of $CaC_6$ at different magnetic field orientations, H//c and H// ab, the anisotropy is found to be ~ 5 at low temperatures, much larger than that of $SrC_6$. These results are in contrast to the stronger anisotropy in the electronic structure for $SrC_6$ than for $CaC_6$ indicating a stronger anisotropy in the superconducting gap in $CaC_6$. The findings are confirmed by the temperature dependence of the superconducting specific heat below $T_c$ for $CaC_6$ and $SrC_6$, suggesting the important role of anisotropic electron-phonon coupling in superconducting intercalated graphites.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.172-172
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• 1999

Perovskite Manganese Oxide has been intensively investigated since the discovery of the colossal magnetoresistive(CMR) effect. In this paper, we studied the effect of temperature dependence and various doping dependence of rare earth site ions of La0.7-xPrxCa0.3MnO3 series using Ultraviolet Photoelectron spectroscopy(UPS). They show unusual temperature dependent features and the doped rare earth ions seem to affect the electron-phonon coupling strongly. We found clear evidence of metal-insulator transition from the spectral density at the Fermi level. but the transition temperature is lower than that deduced from transport measurements. Also we found that the spectral features change as time goes on implying that the surface of these materials is somewhat unstable in the vacuum. We can conclude from these results that the surface oxygen atoms correlated to the hopping electrons can escape from the material into the vacuum and that the surface state of these material is different from the bulk state.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.139.2-139.2
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• 2016

Electrons and phonons in chalcogenide-based materials play are important factors in the performance of an optical data storage media and thermoelectric devices. However, the fundamental kinetics of carriers in chalcogenide materials remains controversial, and active debate continues over the mechanism responsible for carrier relaxation. In this study, we investigated ultrafast carrier dynamics in an multilayered $\{Sb(3{\AA})/Te(9{\AA})\}n$ thin film during the transition from the amorphous to the crystalline phase using optical pump terahertz probe spectroscopy (OPTP), which permits the relationship between structural phase transition and optical property transitions to be examined. Using THz-TDS, we demonstrated that optical conductance and carrier concentration change as a function of annealing temperature with a contact-free optical technique. Moreover, we observed that the topological surface state (TSS) affects the degree of enhancement of carrier lifetime, which is closely related to the degree of spin-orbit coupling (SOC). The combination of an optical technique and a proposed carrier relaxation mechanism provides a powerful tool for monitoring TSS and SOC. Consequently, the response of the amorphous phase is dominated by an electron-phonon coupling effect, while that of the crystalline structure is controlled by a Dirac surface state and SOC effects. These results are important for understanding the fundamental physics of phase change materials and for optimizing and designing materials with better performance in optoelectronic devices.