• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1275-1276
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• 2008

In this study, a micro-cavity organic light-emittingdevice (OLED) with semi-transparent-Ag/AgO hole injecting layer (HIL) was fabricated and their performance was investigated. For the fabrication of OLEDs N,N-diphenyl-N,N-(3-methyphenyl)-1,1-biphenyl-4-4-diamine (TPD), known as a hole transporting material and tris (8-hydroxyquinolinato)-aluminum ($Alq_3$) as both electron-transporting layer (ETL) and emission layer (EML) were deposited using thermal evaporation technique. And Al layer as cathode was then deposited using thermal evaporation technique. Effects of the semi-transparent-Ag/AgO layers on the resulting OLED performance were investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.250-250
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• 2012

Organic light-emitting diodes (OLED) and polymer light emitting diodes (PLED) have been regarded as the candidate for the next generation light source and flat panel display. Currently, the most common OLED industrial fabrication technology used in producing real products utilizes a fine shadow mask during the thermal evaporation of small molecule materials. However, due to high potential including low cost, easy process and scalability, various researches about solution process are progressed. Since polymer has some disadvantages such as short lifetime and difficulty of purifying, small molecule OLED (SMOLED) can be a good alternative. In this work, we have demonstrated high efficient solution-processed OLED with small molecule. We use CBP (4,4'-N,N'-dicarbazolebiphenyl) as a host doped with green dye (Ir(ppy)3 (fac-tris(2-phenyl pyridine) iridium)). PBD (2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole) and TPD (N,N'diphenyl-N,N'-Bis (3-methylphenyl)-[1,1-biphenyl]-4,4'-diamine) are employed as an electron transport material and a hole transport material. And TPBi (2,2',2''-(1,3,5-phenylene) tris (1-phenyl-1H-benzimidazole)) is used as an hole blocking layer for proper hole and electron balance. With adding evaporated TPBi layer, the current efficiency was very improved. Among various parameters, we observed the property of OLED device by changing the thickness of hole transporting layer and solvent which can dissolve organic material. We could make small molecule OLED device with finding proper conditions.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.285-295
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• 1999

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multi-color emission, and low operation voltage. An approach to realize such device characteristics is to use active layers of lanthanide complexes with their inherent extremely sharp emission bands in stead of commonly known organic dyes. In general, organic molecular compounds show emission due to their $\pi$-$\pi*$ transitions resulting in luminescence bandwidths of about 80 to 100nm. Spin statistic estimations lead to an internal quantum efficiency of dye-based EL devices limited to 25%. On the contrary, the fluorescence of lanthanide complexes is based on an intramolecular energy transfer from the triplet of the organic ligand to the 4f energy states of the ion. Therefore, theoretical internal quantum efficiency is principally not limited. In this study, Powders of TPD, $Eu(TTA)_3(phen) and AlQ_3$ in a boat were subsequently heated to their sublimation temperatures to obtain the growth rates of 0.2~0.3nm/s. Organic electrolumnescent devices(OELD) with a structure of $glass substrate/ITO/Eu(TTA)_3(phen)/AI, glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AI and glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AIQ_3AI$ structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and Tris(8-hydroxyquinoline)Aluminum$(AlQ_3)$ as an electron transporting layer. Electroluminescent(EL) and current density-voltage(J-V) characteristics of these OELDs with various thickness of $Eu(TTA)_3(phen)$ layer were investigated. The triple-layer structure devices show the red EL spectrum at the wavelength of 613nm, which is almost the same as the photoluminescent(PL) spectrum of $Eu(TTA)_3(phen)$.It was found from the J-V characteristics of these devices that the current density is not dependent on the applied field, but on the electric field.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.1-4
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• 2000

The Bis(8-oxyquinolino) zinc lII (Znq2) were synthesized successfully from zinc chloride $(ZnCl_2)$ as a initial material . The organic electroluminescece devices (ELDs) were fabricated with N-N'-diphenyl-N-N'-bis (3-meth-ylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) which act as a hole transporting layer and the Znq2 act as an EL emitting layer and electron transporting layer. In order to maximize luminance of ELD, TPD/Znq2/Al were deposited onto cleaned indium tin oxide (ITO) by changing thickness of EL emitting layer. The photoluminescence (PL) results show that Znq2 compound emits yellow green from 540nm. electrochemical behavior with V-J and V-L curve of carrier injection was investigated from 6 V. respectively. The maximum luminance were defected about $838 cd/m^2$. From these results, ai synthesized Znq2 material maybe one of the useful material of organic EL display material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.50-55
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• 2014

It was firstly found in 1st group element. Recently, it has been reported on the improvement of efficiency of the OLEDs by introducing thin layer of some carbonate materials of alkali metal. In order to improve the efficiency of OLEDs which is one of the next generation displays, we have studied the electrical characteristics of the device depending on the thickness ratio of the hole-injection layer to the electron-injection layer. Teflon-AF was used as the hole-injection material, and alkali-metal carbonates of $Li_2CO_3$ were used as the electron-injection materials. To obtain a proper thickness ratio, we manufactured. Four types of devices with the thickness ratio of HIL to EIL were made to be 1 : 4, 2 : 3, 3 : 2, and 4 : 1. The results of electrical and optical properties showed that the device with the thickness ratio of 4 : 1 is the most excellent result. In addition, to prepare a four-layer device by inserting the ${\alpha}$-NPD is a hole transporting material was compared with three-layer element. As a result, the maximum luminance, the maximum luminous efficiency, maximum external quantum efficiency of about 124 [%], 164 [%], 106 [%] improve was confirmed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.121-125
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• 2014

In this research, nanocomposite layers consisting of poly (3,4,-ethylene dioxythiophene):polystyrene sulfonic acid (PEDOT:PSS) and CuO nanoparticles were investigated as hole transport layers in organic solar cells based on poly (3-hexylthiophene) (P3HT) as the electron donor and (6.6) phenyl-C61-butyric acid methyl ester (PCBM) as the electron acceptor. The addition of CuO nanoparticles to PEDOT:PSS layer improved the solar cell performance with 0.5% CuO nanoparticle concentration. At optimized concentration, CuO mixed PEDOT:PSS films had good electrical ($4.131{\Omega}{\cdot}cm$) and optical (transmittance > 90%) properties for using hole transporting layer. We investigated that improved solar cell performance with CuO nanoparticles mixed PEDOT:PSS films.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3469-3472
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• 2012

• ETRI Journal
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• v.33 no.1
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• pp.32-38
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• 2011

We investigated the light-emitting performances of blue phosphorescent organic light-emitting diodes, known as PHOLEDs, by incorporating an N,N'-dicarbazolyl-3,5-benzen interlayer between the hole transporting layer and emitting layer (EML). We found that the effects of the introduced interlayer for triplet exciton confinement and hole/electron balance in the EML were exceptionally dependent on the host materials: 9-(4-tert-butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole, 9-(4-tert-butylphenyl)-3,6-ditrityl-9H-carbazole, and 4,4'-bis-triphenylsilanyl-biphenyl. When an appropriate interlayer and host material were combined, the peak external quantum efficiency was greatly enhanced by over 21 times from 0.79% to 17.1%. Studies on the recombination zone using a series of host materials were also conducted.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.272-279
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• 2003

In this work Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystals were grown by the chemical transport reaction method in which the iodine was used as the transporting agent. The Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystal was found to have a monoclinic structure. The optical absorption spectra of grown crystals were investigated using a temperature-controlled UV-VIS -NIR spectrophotometer. The temperature dependence of band-edge absorption was in a good agreement with the Varshni equation. The observed impurity absorption peaks could be explained as arising from the electron transition between energy levels of Co$^{2+}$ ion sited at the T$_{d}$ symmetry point.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.148-148
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• 2015

Over the past several years, Colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been developed for the future of optoelectronic applications. An inverted-type quantum-dot light-emitting-diode (QDLED), employing low work function organic material polyethylenimine ethoxylated(PEIE) (<10 nm)[1] modified ZnO nanoparticles (NPs) as electron injection and transport layer, was fabricated by all solution processing method, instead of electrode in the device. The PEIE surface modifier incorporated on the top of the ZnO NPs film, facilitates the enhancement of both electorn injection into the CdSe-ZnS QD emissive layer by lowering the workfunction of ZnO from 3.58eV to 2.87eV and charge balance on the QD emitter. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 7.5 V, the QDLED device emitted spectrally orange color lights with high luminance up to 11110 cd/m2, and showed current efficiency of 2.27 cd/A.[2]