• Title/Summary/Keyword: electron transition

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Metal-insulator Transition in $(Sr_{0.75},\;La_{0.25})TiO_3$ Ultra-thin Films

  • Choi, Jae-Du;Choi, Eui-Young;Lee, Yun-Sang;Lee, Jai-Chan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.19.2-19.2
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    • 2011
  • The $(Sr_{0.75},\;La_{0.25})TiO_3$ (SLTO) ultra-thin films with various thicknesses have been grown on Ti-O terminated $SrTiO_3$(100) substrate using Laser-Molecular Beam Epitaxy (Laser MBE). By monitoring the in-situ specular spot intensity oscillation of reflection high energy electron diffraction (RHEED), we controlled the layer-by-layer film growth. The film structure and topography were verified by atomic force microscopy (AFM) and high resolution thin film x-ray diffraction by the synchrotron x-ray radiation. We have also investigated the electronic band structure using x-ray absorption spectroscopy (XAS). The ultra thin SLTO film exhibits thickness driven metal-insulator transition around 8 unit cell thickness when the film thickness progressively reduced to 2 unit cell. The SLTO thin films with an insulating character showed band splitting in Ti $L_3-L_2$ edge XAS spectrum which is attributed to Ti 3d band splitting. This narrow d band splitting could drive the metal-insulator transition along with Anderson Localization. In optical conductivity, we have found the spectral weight transfer from coherent part to incoherent part when the film thickness was reduced. This result indicates the possibility of enhanced electron correlation in ultra thin films.

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Synthesis and Mesomorphic Behavior of Cholesteryl S-Alkoxybenzene Thiocarbonates. (Cholesteryl S -Alkoxybenzene Thiocarbonates의 합성과 액정 성질에 관한 연구)

  • Jeon, Young-Jai
    • Korean Journal of Materials Research
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    • v.2 no.6
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    • pp.398-407
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    • 1992
  • Cholesteryl S-alkoxybenzene thiocarbonates was synthesized and their liquid crystal transition temperature were determined. Those compounds exhibit enantiotropic cholesteric mesophases. The cholestric-isotropic transition temperatures decrease gradually with increasing alkoxy chain length and mesophase transition were investigated by differential scanning calorimetry.

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Computational Study on the Dependence of Electronic Transition Energies of Porphin, Chlorin, Mg-Chlorin and Chlorophyll a on an External Charge

  • Kwon, Jang Sook;Yang, Mino
    • Bulletin of the Korean Chemical Society
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    • v.34 no.2
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    • pp.453-459
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    • 2013
  • In phtosynthetic light harvesting complexes, the electronic transition energies of chlorophylls are influenced by the Coulombic interaction with nearby molecules. Variation of the interactions caused by structural inhomogeneity in biological environment results in a distribution of disordered electronic transition energies of chlorophylls. In order to provide a practical guide to predict qualitative tendency of such distribution, we model four porphyrin derivatives including chlorophyll a molecule interacting with an external positive charge and calculate their transition energies using the time dependent density functional method. It is found that ${\pi}-{\pi}^*$ transition energies of the molecules are generally blue-shifted by the charge because this stabilizes occupied molecular orbitals to a greater extent than unoccupied ones. Furthermore, new transitions in the visible region emerge as a result of the red-shift in energy of an unoccupied Mg orbital and it is suggested that light-induced electron transfer may occur from the tetrapyrrole ring to the central magnesium when the molecules are interacting with a positive charge.

The optical characteristics of $Al_{0.25}Ga_{0.75}As/In_{0.15}Ga_{0.85}As$/GaAspseudomorphic high electron mobility transistor structure grown by molecular beam epitaxy (분자선 에피탁시법으로 성장된 $Al_{0.25}Ga_{0.75}As/In_{0.15}Ga_{0.85}As$/GaAs 슈우도형 고 전자 이동도 트랜지스터 구조의 광학적 특성)

  • 이동율;이철욱;김기홍;김종수;김동렬;배인호;전헌무;김인수
    • Journal of the Korean Vacuum Society
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    • v.9 no.2
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    • pp.130-135
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    • 2000
  • We have analyzed characteristics for the structure of $Al_{0.25}/Ga_{0.75}/As/In_{0.15}/Ga_{0.85}$/AS/GaAS pseudomorphic high electron mobility transistor (PHEMT) by photoluminescence (PL) and photoreflectance (PR) measurements. By the PL measurement at 10 K, we observed el-hl transition peak at 1.322 eV and e2-hl transition peak at 1.397 eV in the InGaAs quantum well. We calculated value of 23 meV, the difference between the first energy level and the second energy level of a valence band by dependence of temperatures. Also, (e2-h2) transition signal was observed at 300 K by PR measurement. From the PR measurement, we recognized that the transition was dominated the second energy level of conduction band than the first energy level of conduction band due to band filling. The other hand, PL signal of the first energy level of conduction band was dominated because of the electron screening effect.

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Electrical Transport Properties of La0.5Sr0.5CrO3 Ceramics (La0.5Sr0.5CrO3 세라믹스의 전기전도특성)

  • Jung, Woo-Hwan
    • Korean Journal of Materials Research
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    • v.26 no.1
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    • pp.35-41
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    • 2016
  • The electrical transport properties of $La_{0.5}Sr_{0.5}CrO_3$ below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below $T_c$, $La_{0.5}Sr_{0.5}CrO_3$ contains a dielectric relaxation process in the tangent loss and electric modulus. The $La_{0.5}Sr_{0.5}CrO_3$ involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in $La_{0.5}Sr_{0.5}CrO_3$ indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.

Atomic Force Microscopy Study of Conducting Layered Transition Metal Ditellurides

  • Kim Sung-Jin;Park So-Jung;Oh Hoon-Jung;Jeon, Il Cheol;Song Sunae
    • Bulletin of the Korean Chemical Society
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    • v.15 no.12
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    • pp.1098-1103
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    • 1994
  • Atomic force microscopy (AFM) images of two conducting layered transition-metal ditellurides, $TaTe_2$ and $Ta_{0.5}$$V_{0.5}$$Te_2$, were examined and their surface and bulk structural features were compared. All the measured unit cell parameters from AFM image were consistent and in complete agreement with the results of the X-ray diffraction. The microscopic structures of corrugated surface tellurium sheets were strongly affected by the modification of metal double zig-zag chains underneath Te surface. Large difference in the height amplitudes of AFM images in $TaTe_2$ and $Ta_{0.5}$$V_{0.5}$$Te_2$ phases was observed and this reflects large difference in the surface electron densities of two phases. On surface, the shorter intralayer Te…Te contacts in $TaTe_2$ induce more electron transfer from Te p-block bands to Ta d-block bands, thus electron density on surface observed in $TaTe_2$ is much lower than that of $Ta_{0.5}$$V_{0.5}$$Te_2$. However, in bulk, interlayer Te…Te contacts in V substituted phase are shorter than those in $TaTe_2$ phase, thus tellurium-to-metal electron transfer occurs more easily in $Ta_{0.5}$$V_{0.5}$$Te_2$ phase.

Characteristics of the Ionospheric Mid-Latitude Trough Measured by Topside Sounders in 1960-70s

  • Hong, Junseok;Kim, Yong Ha;Lee, Young-Sook
    • Journal of Astronomy and Space Sciences
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    • v.36 no.3
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    • pp.121-131
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    • 2019
  • The ionospheric mid-latitude trough (IMT) is the electron density depletion phenomenon in the F region during nighttime. It has been suggested that the IMT is the result of complex plasma processes coupled to the magnetosphere. In order to statistically investigate the characteristics of the IMT, we analyze topside sounding data from Alouette and ISIS satellites in 1960s and 1970s. The IMT position is almost constant for seasons and solar activities whereas the IMT depth ratio and the IMT feature are stronger and clearer in the winter hemisphere under solar minimum condition. We also calculated transition heights at which the densities of oxygen ions and hydrogen/helium ions are equal. Transition heights are generally higher in daytime and lower in nighttime, but the opposite aspects are seen in the IMT region. Utilizing the Incoherent Scatter Radar (ISR) electron temperature measurements, we find that the electron temperature in the IMT region is enhanced at night during winter. The increase of electron temperature may cause fast transport of the ionospheric plasma to the magnetosphere via ambipolar diffusion, resulting in the IMT depletion. This mechanism of the IMT may work in addition to the simply prolonged recombination of ions proposed by the traditional stagnation model.

Test of a Multi-Reference Many-Body Perturbation Theory for the Description of Electron Correlations in four Valence Electron States of Transition Metal Atoms

  • Lee, Yoon-Sup;Sun, Ho-Sung;Freed, Karl F.;Hagstrom, S.
    • Bulletin of the Korean Chemical Society
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    • v.7 no.4
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    • pp.262-266
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    • 1986
  • A multi-reference many-body perturbation theory (MRMBPT) method is critically tested in second order by comparing with the corresponding configuration interaction (CI) calculations. Excitation energies of the four-valence-electron states of transition metal atoms and ions are used for the comparison. The agreement between the second order MRMBPT and CI calculations is very reasonable, confirming the reliability of the second order MRMBPT method. The reliability of calculations with the present second order MRMBPT method was only been inferred empirically in the past since most results have been gauged by the agreement with experiment and/or with other MRMBPT calculations based upon different sets of orbitals and configuration spaces. The present MRMBPT method appears to be an efficient ab initio multi-reference method for the calculation of electron correlation effects in atoms and molecules, and it is shown how MRMBPT can be used to estimate core-core and core-valence correlation effects which are often omitted in CI calculations because too many configurations and correlating electrons are involved.

The Effect of Cr doping on the Magnetic and Magnetocaloric Properties of MnCoGe Alloys

  • Emre, S. Yuce
    • Journal of Magnetics
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    • v.18 no.4
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    • pp.405-411
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    • 2013
  • The structural, magnetic and magnetocaloric properties of $CoMn_{1-x}Cr_xGe$ (x=0.05-0.125) have been investigated by using electron microscopy, x-ray diffraction, calorimetric and magnetic measurements. In this study, our aim is to justify the magnetocaloric effect by tuning the structural and magnetic transition temperature with Cr doping on CoMnGe pure system. The substitution of Cr for Mn leads to a decrease of both structural and magnetic transition temperatures. However, structural and magnetic transition temperatures do not close to each other. From magnetization measurement, we calculate that isothermal entropy change associated with magnetic transition can be as high as 3.82 J $kg^{-1}K^{-1}$ at 302 K in a field of 7 T. Meanwhile, structural phase transition contribution to isothermal entropy change is calculated as 5.85 J $kg^{-1}K^{-1}$ at 322 K for 7 T.

Qantum Transition properties of Si in Electron Deformation Potential Phonon Interacting Qusi Two Dimensional System (준 2차원 시스템에서 전자 변위 포텐셜 상호 작용에 의한 Si의 양자 전이 특성)

  • Joo, Seok-Min;Cho, Hyun-Chul;Lee, Su-Ho
    • Journal of IKEEE
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    • v.23 no.2
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    • pp.502-507
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    • 2019
  • We investigated theoretically the quantum optical transition properties of qusi 2-Dinensinal Landau splitting system, in Si. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on two transition processes, namely, the phonon emission transition process and the phonon absorption transition process. Through the analysis of this work, we found the increasing properties of QTLW and QTLS of Si with the temperature and the magnetic fields. We also found the dominant scattering processes are the phonon emission transition process.