• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.305-306
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• 2005

The effects of As addition In amorphous selenium (a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating (MPG) technique We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As X-ray device. The fabricated a-Se (0.3%As) based X-ray detector exhibited the highest X-ray sensitivity of 5 samples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.121-125
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square- and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.19-23
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square-and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• Transactions on Electrical and Electronic Materials
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• 제18권3호
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• pp.176-179
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• 2017

Non-vacuum processing technology was used to produce $Cs_3Sb$ photocathodes on substrates and fabricate in-situ panel devices. Electrical properties of these panel devices were characterized by measuring anode current and charge dose as functions of devices operation time. An excitation light source with a 475 nm wavelength was used for photocathodes. Results showed that emission properties of these photocathode emitters depended heavily on the vacuum level of these devices and that $Cs_3Sb$ flat emitters had the potential of operating for a long lifetime with stable electron emission characteristics via re-cesiation process in the panel device. These features make $Cs_3Sb$ photocathodes suitable as flat emitters in panel device applications.

• 한국재료학회지
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• 제27권3호
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• pp.137-143
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• 2017

Boron-doped diamond (BDD) electrode has an extremely wide potential window in aqueous and non-aqueous electrolytes, very low and stable background current and high resistance to surface fouling due to weak adsorption. These features endow the BDD electrode with potentially wide electrochemical applications, in such areas as wastewater treatment, electrosynthesis and electrochemical sensors. In this study, the characteristics of the BDD electrode were examined by scanning electron microscopy (SEM) and evaluated by accelerated life test. The effects of manufacturing conditions on the BDD electrode were determined and remedies for negative effects were noted in order to improve the electrode lifetime in wastewater treatment. The lifetime of the BDD electrode was influenced by manufacturing conditions, such as surface roughness, seeding method and rate of introduction of gases into the reaction chamber. The results of this study showed that BDD electrodes manufactured using sanding media of different sizes resulted in the most effective electrode lifetime when the particle size of alumina used was from $75{\sim}106{\mu}m$ (#150). Ultrasonic treatment was found to be more effective than polishing treatment in the test of seeding processes. In addition to this, BDD electrodes manufactured by introducing gases at different rates resulted in the most effective electrode lifetime when the introduced gas had a composition of hydrogen gas 94.5 vol.% carbon source gas 1.6 vol.% and boron source gas 3.9 vol.%.

• Korean Membrane Journal
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• 제1권1호
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• pp.25-37
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• 1999

positron annihilation Lifetime Spectroscopy has been extensively applied in recent years to investigate the free volume in polymers owing to the capability of the electron-positron bound system (positronium) to probe the typical size of sub-nanometric cavities among the macromolecular chains. In this paper we show recent results obtained through this technique in some amorphous polymeric mem-branes(olyurethanes. PUs and polytrimethilsylilpropine PTMSP) after a brief survey of the general features of the annihilation process as well as of the experimental apparatus. Lifetime of o-ps decay({{{{ tau _3}}}}) in PUs increases going from sub {{{{ TAU _g}}}} to over {{{{ TAU _g}}}} temperatures following a sigmoid curve. The coefficient of dilatation of the free volume fraction is shown to be the sum of two contributes due to the variation with T of the number of holes and of their mean volume. PAL spectrum of PTMSP freshly prepared shows four lifetime components: {{{{ tau _3}}}} and {{{{ tau _4}}}}: only are useful for free volume study. Two kinds of holes of different equivalent radius are reported ({{{{ gamma _s}}}} 4.60 nm and {{{{ gamma _1}}}} 0.754) The equivalent volume does not change in a range of 100 K. however the physical aging increases density and decreases oxygen permeability while {{{{ gamma _s}}}} goes down to 0.374 and r1 to 0.735 The number of holes obtained from the intensities{{{{ IOTA _3}}}} and {{{{ IOTA _4}}}} of PAL spectra decreases with aging 21.7% and 3.5% for large and small holes respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.192-193
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• 2007

A hollow cathode which has extremely stable discharge characteristic has been developed. This is composed of the two separated lanthanum hexaboride ($LaB_6$) of a disk type in the tube as the electron emitters. The way of design is of great advantage to extend the surface discharge area of the $LaB_6$, which is also useful for optimal fixing of the $LaB_6$. The hollow cathode is capable of producing 30 kW (100 V, 300 A) of power continuously.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.306-309
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• 2016

The Cs₃Sb photocathode was formed by non-vacuum process technology. An in-situ vacuum device was fabricated successively with flat cesium antimonide photocathode emitters fabricated in a process chamber. The electrical properties of the device were characterized. Electron emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The electrical characteristics of the devices were investigated by measuring the anode current as a function of device operation times with respect to applied anode voltages. Planar blue LED light with a 450 nm wavelength was used as an excitation source. The results showed that the cesium antimonide photocathode emitter has the potential of long lifetime with stable electron emission characteristics in panel devices. These features demonstrate that the cesium antimony photocathodes produced by non-vacuum processing technology is suitable for flat cathodes in panel device applications.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.355-358
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• 2008

We report a method for improving characteristics of AC PDP in this study. This improvement is obtained by spreading MgO nanoparticles on transparent dielectric layer. These nanoparticles are covered with MgO protective layer by electron beam evaporation. MgO nanoparticle has difference in cathodoluminescence stronger than MgO layer by electron beam evaporation. This method worked for reducing statistical delay especially. Efficacy, discharge voltage and luminance were also improved But these improvements has limited lifetime because continuous ion bombardments changed characteristic of MgO surface.

• 제어로봇시스템학회논문지
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• 제14권4호
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• pp.365-368
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• 2008

Feasibility test for radical reactions in organic light emitting diode(OLED) has been applied on OLED consisting of hole transport layer(HTL) and electron transport layer(ETL). Organic molecules such as 4,4',-Bis[N-(1-naphthyl)-N-phenylamino] biphenyl(NPD) and 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine(m-MTDATA) are chosen for hole transport layer(HTL) and Bathocuproine(BCP) for electron transport layer(ETL) in this study. Informations on energy and shape of frontier orbitals and data on radical reactions of simple aromatics from semiconductor($TiO_2$) photocatalysis have provided basis for determining feasibility for radical reactions in OLED. The outcome of our feasibility test would be useful in designing optimum molecule for organic layer with a view to extending the lifetime of OLED.