• Title/Summary/Keyword: electron impact

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Impact Ionization Rates of Electron in GaAs/AlGaAs Qunantum Well Using EMC Simulation (EMC Simulation을 이용한 GaAs/AlGaAs 양자 우물 내 전자의 충돌 이온화율)

  • 윤기정;홍창희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.11a
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    • pp.221-225
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    • 1994
  • We described the impact ionization rates of electron in GaAs/AlGaAs MQH(multi- quantum well) using EMC(ensenble Monte Carlo) simulation. Hot electron energy of injected into quantum well is increasing nearly liearly due to the applied electric field to the barrier of MQM inspite of various Al mole fraction in AlGaAs or barrier width. Impact ionization rates are decreasing exponentially by increasing Al mole fraction, and they have peak vague due to the barrier width.

A Study on electron beam veldability of 9%Ni steels (III) - Microstructures and mechanical properties of welded joints - (9%Ni 강의 전자빔 용접성에 관한 연구 (III) - 전자빔 용접부 기계적 특성과 조직 -)

  • 김숙환;강정윤
    • Journal of Welding and Joining
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    • v.15 no.4
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    • pp.116-125
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    • 1997
  • Electron beam weldability of 9%Ni steels has been investigated to apply EBW to the construction of LNG storage tank. While mechanical properties of welded joints were satisfied by ASTM specification, impact energy of weld metal was as low as 27 - 55J at $-196^{\circ}C$. As the result of Ni wires inserted at the joint to be welded, Ni content of weld metal was increased to about 10%, resulting on the improvement of impact toughness to 110 ~ 120J at $-196^{\circ}C$. This improvement of impact toughness in weld metal was due to the formation of tempered martensite and retained austenite. Above results indicate that, if Ni content of weld metal was increased about 10% by Ni wires addition, electron beam welded 9%Ni steels weld metal had sufficient impact energy necessary for a LNG storage tank.

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Intracluster Ion/Molecule Reactions within 1,1-Difluoroethylene Homocluster

  • 이선영;최창주;정경훈
    • Bulletin of the Korean Chemical Society
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    • v.18 no.3
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    • pp.296-300
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    • 1997
  • The intracluster ion/molecule reactions within 1,1-difluoroethene homocluster have been studied by electron-impact quadrupole mass spectrometry. When CH2CF2 seeded in helium is expanded and ionized by electron impact, two different types of ion/molecule association (polymerization) reaction products, i.e., (CH2CF2)n+ (n≥l) and (CF2CH2)qX+ (X=fragment species, q≤n), are formed. The higher association products, (CH2CF2)n+ (n=3, 4), have shown stronger intensities over the lower association product, (CH2CF2)2+, in the low electron impact energy region ( < 39 eV). These stronger intensities are interpreted in terms of the stabilization of these ions due to the ring formations over the dimer ion in this energy region. The evidence of ring formation mechanism is on the basis of the intensity distribution of fragments at various electron impact energy. In another typical branched-chain growth reaction of these compounds, the F-shift reaction path is found to be more favorable energetically than the H-shift via the fragment patterns of clusters and semi-empirical calculation.

Electron Transport Characterization Including L Valley at High Field (실리콘의 L valley를 고려한 강한 전계에서 전자 수송의 특성)

  • Rhee, Jun-Koo;Park, Young-June;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 1990.07a
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    • pp.257-260
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    • 1990
  • Monte Carlo simulations of electron impact ionization in silicon utilizing simple spherical band approximation including L valley are presented. The mean energy of electron at high electric field is lowered and the threshold energy of electron impact ionizaiotn is smeared out to $E_x$ by including L valley. This work also presents the importance of the modeling of L valley by calculating the electron population rate of it over the threshold energy of eletron impact ionization, which is higher than 10%

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Tail Electron Hydrodynamic Model for Consisten Modeling of Impact Ionization and Injection into Gate Oxide by Hot Electrons (고온전자의 충돌 이온화 및 게이트 산화막 주입 모델링을 위한 Tail 전자 Hydrodynamic 모델)

  • 안재경;박영준;민홍식
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.3
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    • pp.100-109
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    • 1995
  • A new Hydrodynamic model for the high energy tail electrons(Tail Electron Hydrodynamic Model : TEHD) is developed using the moment method. The Monte Carlo method is applied to a $n^{+}-n^{-}-n^{+}$ device to calibrate the TEHD equations. the discretization method and numerical procedures are explained. New models for the impact ionization and injection into the gate oxide using the tail electron density are proposed. The simulated results of the impact ionization rate for a $n^{+}-n^{-}-n^{+}$ device and MOSFET devices, and the gate injection experiment are shown to give good agreement with the Monte Carlo simulation and the measurements.

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Anaysis of electron transport characteristics using full band impact ionization model on GaAs - field direction dependent analysis - (풀밴드 임팩트이온화모델을 이용한 GaAs 전자전송특성 분석 - 전계방향에 따른 분석 -)

  • 정학기;이종인
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.3 no.4
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    • pp.915-922
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    • 1999
  • The field dependent characteristics of electron transport with GaAs impact ionization have been analyzed, using GaAa full band E-k relationship. The E-k relationship is derived from empirical pseudopotential method, using Fermi's golden rule and local form factor, and Brillouin zone is divided into tetrahedrons for calculating impact ionization rate, and tetrahedron method, in which integrates each tetrahedrons, is used. Monte Carlo simulation is used for analyzing anisotropy of impact ionization. A result of transient analysis for impact ionization has presented that anisotropy of impact ionization only arises during transient state and impact ionization is isotropic under steady state. Anisotropic characteristics of impact ionization for GaAs, which is presented in this paper, can be used in carrying out a transient analysis for GaAs devices.

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A study on the electron transport properties in HgCdTe using monte carlo method (몬테칼로 방법을 사용한 HgCdTe에서의 전자 전송 특성에 관한 연구)

  • 유상동;곽계달
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.2
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    • pp.40-51
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    • 1998
  • Electron transport properties are investigated by Monte Carlo simulation in n-HgCdTe. The material is easily degenerated at low temperature or being slightly doped, and is characterized by small band gap and large nonparabolic factor. The degeneracy is incorporated in the Monte Carlo simulation by taking into account the electron-electron scattering and the pauli exclusion principle. In the conventional method, however, the electron-electron scattering rate was developed under the assumption of parabolic conduction band. A new formulation of the electron-electron scattering rate is develop considering the band nonparabolicity and overlap integral. The electron-electron scattering effects on the electron distribution,impact ionization coefficienty, electron temperature, drift velocity and electron energy are presented.

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Electron collision cross sections of molecules relevant to plasma processing

  • Jo, Hyeok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.34-34
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    • 2010
  • Absolute electron-impact cross sections for molecular targets including their radicals are important in developing plasma reactors and testing various plasma processing gases. However, low-energy electron collision data for these gases are sparse and only the limited cross section data are available. In this presentation, the methods and the status of measurements of, mainly, absolute elastic cross sections for electron-polyatomic molecule collisions will be discussed with recent results from Chungnam National University. Elastic cross sections are essential for the absolute scale conversion of inelastic cross sections, as well as for testing computational methods.

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Analysis of Heat Generation Induced by Electron Impact in X-Ray Tube Using FEM and Monte Carlo Method (유한요소법과 몬테카를로법을 이용한 X선 튜브에서 전자빔 충격에 의한 열 발생 해석)

  • Kim, Heungbae;Yoo, Tae Jae
    • Journal of the Korean Society for Precision Engineering
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    • v.32 no.4
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    • pp.387-394
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    • 2015
  • We analyze heat generation as well as temperature distribution induced by accelerated electron impact on a target in a closed x-ray tube. For the sake of accuracy, we use Monte carlo analysis. This method gives accurate energy deposit in a medium with additional information such as secondary and backscattered electron as well as their paths. A Tungsten coated layer is divided by small rectangular cell which accumulate energy loss of primary electron beam. The cells and their accumulated energy datum are used for the input of finite element analysis. The Maximum temperature rising and temperature distribution were analyzed by transient heat analysis. Some temperature parameters such as target size and coating thickness were varied to investigate temperature sensitivity. Temperatures were compared each other to find primary variable that affect temperature rising on the x-ray target. The results will be helpful in development highresolution x-ray tube and related industries.

Simulation Study of Capacitively Coupled Oxygen Plasma with Plasma Chemistry including Detailed Electron Impact Reactions (전자충격반응을 포함하는 플라즈마 화학반응을 고려한 용량결합형 산소플라즈마의 전산모사 연구)

  • Kim, Heon Chang
    • Applied Chemistry for Engineering
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    • v.22 no.6
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    • pp.711-717
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    • 2011
  • Two dimensional simulation results of a capacitively coupled oxygen plasma in a cylindrical reactor geometry are presented. Detailed electron impact reaction rates, which strongly depend on electron energy, are computed from collision cross sections of electrons with $O_2$ and O. Through the coupling of a three moment plasma model with a neutral chemistry/transport model are predicted spatiotemporal distributions of both charged species (electron, $O_2{^+}$, $O^+$, $O_2{^-}$, and $O^-$) and neutral species including ground states ($O_2$ and O) and metastables, known to play important roles in oxygen plasma, such as $O_2(a^1{\Delta}_g)$, $O_2(b^1{{\Sigma}_g}^+)$, $O(^1D)$, and $O(^1S)$. The simulation results clearly verify the existence of a double layer near sheath boundaries in the electronegative plasma.