Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Impact Ionization Rates of Electron in GaAs/AlGaAs Qunantum Well Using EMC Simulation

EMC Simulation을 이용한 GaAs/AlGaAs 양자 우물 내 전자의 충돌 이온화율

  • 윤기정 (동의공업전문대학 전자과) ;
  • 홍창희 (동아대학교 전자공학과)
  • Published : 1994.11.01

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Abstract

We described the impact ionization rates of electron in GaAs/AlGaAs MQH(multi- quantum well) using EMC(ensenble Monte Carlo) simulation. Hot electron energy of injected into quantum well is increasing nearly liearly due to the applied electric field to the barrier of MQM inspite of various Al mole fraction in AlGaAs or barrier width. Impact ionization rates are decreasing exponentially by increasing Al mole fraction, and they have peak vague due to the barrier width.

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