• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.634-639
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• 2002

Using laser ablation technique carbon thin films were deposited on Si(100) substrate as a function of substrate temperature. In this study, the surface morphologic, structural and field emission properties of these carbon thin films were investigated using Raman spectroscopy, scanning electron microscopy, and a diode technique, respectively. With increasing of the substrate temperature, the surface morphologies were changed significantly. Moreover, the intensity of D-band and the full width at half maximum of these bands were dependent on substrate temperatures. As the substrate temperature was increased, the field emission properties were improved. As the result, we find that the field emission properties of the films were changed significantly with the substrate temperature and structural features of carbon than films.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.383-383
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• 2011

Generally, field emitters can be categorized into two types according to the emitter shape, one is a planar field emitter and the other is a point emitter. The planar field emitter is used for displays, flat lamps and signage boards. On the other hands, the point field emitter is expected to play a significant role in x-ray sources and electron beam sources. Such applications of the point field emitters, especially, need large emission current and high emission stability with a small electron beam size. A few reports announced point emitters made by carbon nanotubes (CNTs). However, they still have suffered from poor reproducibility and low emission current. Here, we demonstrated high performance CNT point emitters by attaching CNTs onto graphite rod. Graphite rod exhibited good electrical conductivity and chemical stability. In this method, the shape of the point emitter could be easily controlled by changing the length and diameter of the graphite rod. The CNT point emitter showed emission current over 1 mA at an applied electric field of 1.4 V/${\mu}m$. We consider that the stable emission performance is attributed to the stable contact between CNTs and graphite rod.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.3
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• pp.376-379
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• 2013

Multi-walled carbon nanotubes (MWCNTs) were synthesized using catalytic chemical vapor deposition (CVD) method. Oxygen plasma treatment was applied to modify surface state of the CNTs synthesized for improvement of field emission performance. Surface state of the plasma treated CNTs was studied by X-ray photoelectron spectroscopy (XPS). The surface states of the CNTs were changed as a function of plasma treatment time. The oxygen related carbon shift was moved toward higher binding energy with the plasma treatment time. This result implies that the oxygen plasma treatment changes the surface state effectively. While any shift in carbon 1s peak was not detected for the as grown CNTs, oxygen related carbon shift was detected for the plasma treated CNTs. Carbon shift implies that closed CNT tips were opened by the oxygen plasma and reacted with oxygen species. Since the field emission occurs at pentagons or dangling bonds of the CNT tips, the increase of carbon-oxygen bonds plays an important role in field emission behavior by increasing the number of electron emission sites resulting in improvement of the field emission performance.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.92-97
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900 ^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^2$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• Journal of Information Display
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• v.2 no.3
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• pp.48-53
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• 2001

Carbon nanotube emitters, prepared by screen printing, have demonstrated a great potential towards low-cost, largearea field emission displays. Carbon nanotube paste, essential to the screen printing technology, was formulated to exhibit low threshold electric fields as well as an emission uniformity over a large area. Two different types of triode structures, normal gate and undergate, have been investigated, leading us to the optimal structure designing. These carbon nanotube FEDs demonstrated color separation and high brightness over 300 $cd/m^2$ at a video-speed operation of moving images. Our recent developments are discussed in details.

• Applied Science and Convergence Technology
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• v.23 no.2
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• pp.83-89
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• 2014

Adsorption of residual gas molecules damped the emission current of a W (310) field electron emission (FE) emitter. The damping speed was linearly proportional to the pressure gauge readings at pressure ranging from ${\sim}10^{-8}Pa$ to ${\sim}10^{-9}Pa$, and the proportionality constant was employed to measure pressure in the $10^{-10}Pa$ range. A time plot of FE current revealed the existence of an "initial stable region" after the flash heating of W(310) FE, during which the FE current damps very slowly. The presence of non-hydrogen gas removed this region from the plot, supplying a means of qualitatively analysing the gas species.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.4
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• pp.93-96
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• 2000

Microchannel plates (MCPs) have been developed by introducing new materials and process technologies. Main body was made of alumina by programmable punching, laminating, and firing. The channel walls of pore arrays of an MCP were deposited with thin films by electroless copper plating and sol-gel process. Our MCP has advantages such as easy fabrication, durability, high temperature endurance, and applicability to the large size comparing with the conventional MCPs. Experiments on the brightness of an MCP incorporated FED revealed that the FED with a MCP is three to four times brighter than a conventional FED. Moreover, the focusing in a FED is improved. Incorporating an MCP into a FED is one of promising methods to enhance the characteristics of the FED. In addition, amplification yield of the MCP is measured for varying the aspect ratio and the input current.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.4
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• pp.743-748
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• 2010

Boron nitride (BN) and carbon nitride (CN) films, which have relatively low work functions and commonly exhibit negative electron affinity behaviors, were coated on carbon nanotubes (CNTs) by magnetron sputtering. The CNTs were directly grown on metal-tip (tungsten, approximately 500nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The variations in the morphology and microstructure of CNTs due to coating of the BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM). The energy dispersive x-ray (EDX) spectroscopy and Raman spectroscopy were used to identify the existence of the coated layers (CN and BN) on CNTs. The electron-emission properties of the BN-coated and CN-coated CNT-emitters were characterized using a high-vacuum field emission measurement system, in terms of their maximum emission currents ($I_{max}$) at 1kV and turn-on voltage ($V_{on}$) for approaching $1{\mu}A$. The results showed that the $I_{max}$ current was significantly increased and the $V_{on}$ voltage were remarkably reduced by the coating of CN or BN films. The measured values of $I_{max}-V_{on}$ were as follows; $176{\mu}A$-500V for the 5nm CN-coated emitter and $289{\mu}A$-540V for the 2nm BN-coated emitter, respectively, while the $I_{max}-V_{on}$ of the as-grown (i.e., uncoated) emitter was $134{\mu}A$-620V. In addition, the CNT emitters coated with thin CN or BN films also showed much better long-term (up to 25h) stability behaviors in electron emission, as compared with the conventional CNT emitter.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.49-53
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• 1999

We have studied the field emission characteristics of diamond-like-carbon (DLC) films deposited by a layer-by-layer technique using plasma enhanced chemical vapor deposition, in which the deposition of a thin layer of DLC and a CH4 plasma exposure on its surface were carried out alternatively. The hydrogen-free DLC can be deposited by CH4 plasma exposure for 140 sec on a 5 nm DLC layer. N2 gas-phase doping in the CH4 plasma was also carried out to reduce the work function of the DLC. The optimum [N2]/[CH4] flow rate ratio was found to be 9% for the efficient electron emission, at which the onset-field was 7.2 V/$\mu\textrm{m}$. It was found that the hydrogen-free DLC has a stable electron emitting property.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.69-72
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^{2}$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.