• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.54-60
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• 1994

In this paper, we present the analytical models for the change of the lateral electric field distribution and the velocity saturation region length with the electron trapping of stressed SC-PMOSFET in the saturation region. To derive the hot-electron-induced lateral electric field of stressed SC-PMOSFET. Ko's pseudo two dimensional box model in the saturation region which illustrates the analysis of the velocity saturation region is modified under the condition of electron trapping in the oxide near the drain region. From the results, we have the following lateral electric field in the y-direction, that is, E(y) ES1satT.cosh(y/l) qNS1tT.sinh(y/l)/lCox. It is shown that the trapped electrons influence the field in the drain region. decreasing the lateral electric field. Calculated velocity saturaion length increases with the trapped electrons. increasing the drain current of stressed SCPMOSFET. This results well explain the HEIP phenomenon of PMOSFET's.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.519-523
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• 2000

Using plasma-enhanced chemical vapor deposition (PECVD), carbon thin film as electron field emitter were fabricated. These carbon thin film were deposited on Si(100) substrate at several RF power. These film were estimated by raman spectroscopy, scanning electron microscopy, and field emission. The field electron emission property of these carbon thin film was estimated by a diode technique. As the result, we observed that the field emission properties of these films were promoted by higher RF power. These results are explained as change of surface morphology and structural properties of carbon thin film

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.385-388
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• 1999

Electron field emission properties from various CVD diamond films were studied. Diamond films were synthesized by microwave plasma CVD at 1173K and at 673K substrates temperature and pulse microwave plasma CVD at 1173K. B-doped diamond film was synthesized by microwave plasma CVD at 1173K also. Estimation by SEM, both the non-doped diamond film and B-doped diamond film which were synthesized at 1173K substrate temperature were $2~3\mu\textrm{m}$ in diameter and nucleation densities were $10^{8}{\;}numbers/\textrm{cm}^2$ order. The diamond film synthesized at 673K was $0.2\mu\textrm{m}$ in diameter and nucleation densities was 109 numbers/cm2 order. The diamond film synthesized by pulse microwave plasma CVD at 1173K was $0.2\mu\textrm{m}$ in diameter and nucleation density was $10^{9}{\;}numbers/\textrm{cm}^2$ order either. From the result of electron field emission measurement, electron field emission at $20V/\mu\textrm{m}$ from CVD diamond film synthesized by pulse microwave plasma CVD was $37.3\mu\textrm{A}/\textrm{cm}^2$ and the diamond film showed the best field emission property comparison with other CVD diamond.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.4
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• pp.107-112
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• 2001

Laser Thomson scattering measurements of electrom temperature and density in a neutral loop discharge (NLD) plasma were performed in order to reveal the electron behavior around the neutral loop (NL). The experimental results were examined by using a simulation model that included effects of a three dimensional electromagnetic field with spatial decay of the RF electric field, and the limitation of the spatial extent of the electron motion and collision effect. From the experiments and modeling of the electron behavior, it was found that NLD plasma posses the electron temeprature $T_{e}$ and density ne peaks around the NL is essential for the formation of plasma. Also, the optimum condition of plasma production could be simply estimated by the calculation of $U_{av}$ and $F_{0}$././.

• International Journal of Aeronautical and Space Sciences
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• v.15 no.3
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• pp.320-334
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• 2014

Over the last two decades, numerous experimental and numerical efforts have examined physical phenomena in plasma discharge devices. The physical mechanisms that govern the anomalous electron diffusion from the cathode to the anode in the Hall Effect Thruster (HET) are not fully understood. This work used 1-D numerical method to improve our understanding and gain insight into the effect of the anomalous electron diffusion in the HET. To this end, numerical solutions are compared with various experimental HET performance measurements and the effects of anomalous electron diffusion are analyzed. The relationships between the anomalous electron diffusion and important parameters of the HET are also studied quantitatively. The work identifies the cathode mass flow rate fraction, radial magnetic field distribution, and discharge voltage as significant factors that affect anomalous electron diffusion. Additionally, the study demonstrates a computational process to determine the radial magnetic field distribution required to achieve specific thruster performance goals.

• Journal of Powder Materials
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• v.24 no.4
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• pp.285-291
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• 2017

We propose a custom analysis technique for the dark field (DF) image based on transmission electron microscopy (TEM). The custom analysis technique is developed based on the $DigitalMicrograph^{(R)}$ (DM) script language embedded in the Gatan digital microscopy software, which is used as the operational software for most TEM instruments. The developed software automatically scans an electron beam across a TEM sample and records a series of electron diffraction patterns. The recorded electron diffraction patterns provide DF and ADF images based on digital image processing. An experimental electron diffraction pattern is recorded from a IrMn polycrystal consisting of fine nanograins in order to test the proposed software. We demonstrate that the developed image processing technique well resolves nanograins of ~ 5 nm in diameter.

• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.314-318
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• 2002

We examine the adjustment of the semiconvergent angle and current for the miniaturized micro column working at low voltage but producing maximized current. Our study shows that the minimum electron beam sizes are 10 ㎚ for the cold field emitter (CFE) and 20 ㎚ for the thermal field emitter (TFE) at a given condition.

• The Journal of Korean Society for Radiation Therapy
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• v.14 no.1
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• pp.175-186
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• 2002

The purpose of this study is directly measure and evaluate about absorbed dose change according to nominal energy and electron cone or medical accelerator on isodose curve, percentage depth dose, contaminated X-ray, inhomogeneous tissue, oblique surface and irradiation on intracavitary that electron beam with high energy distributed in tissue, and it settled standard data of hish energy electron beam treatment, and offer to exactly data for new dote distribution modeling study based on experimental resuls and theory. Electron beam with hish energy of $6{\sim}20$ MeV is used that generated from medical linear accelerator (Clinac 2100C/D, Varian) for the experiment, andwater phantom and Farmer chamber md Markus chamber und for absorbe d dose measurement of electron beam, and standard absorbed dose is calculated by standard measurements of International Atomic Energy Agency(IAEA) TRS 277. Dose analyzer (700i dose distribution analyzer, Wellhofer), film (X-OmatV, Kodak), external cone, intracavitary cone, cork, animal compact bone and air were used for don distribution measurement. As the results of absorbed dose ratio increased while irradiation field was increased, it appeared maximum at some irradiation field size and decreased though irradiation field size was more increased, and it decreased greatly while energy of electron beam was increased, and scattered dose on wall of electron cone was the cause. In percentage depth dose curve of electron beam, Effective depth dose(R80) for nominal energy of 6, 9, 12, 16 and 20 MeV are 1.85, 2.93, 4.07, 5.37 and 6.53 cm respectively, which seems to be one third of electron beam energy (MeV). Contaminated X-ray was generated from interaction between electron beam with high energy and material, and it was about $0.3{\sim}2.3\%$ of maximum dose and increased with increasing energy. Change of depth dose ratio of electron beam was compared with theory by Monte Carlo simulation, and calculation and measured value by Pencil beam model reciprocally, and percentage depth dose and measured value by Pencil beam were agreed almost, however, there were a little lack on build up area and error increased in pendulum and multi treatment since there was no contaminated X-ray part. Percentage depth dose calculated by Monte Carlo simulation appeared to be less from all part except maximum dose area from the curve. The change of percentage depth dose by inhomogeneous tissue, maximum range after penetration the 1 cm bone was moved 1 cm toward to surface then polystyrene phantom. In case of 1 cm and 2 cm cork, it was moved 0.5 cm and 1 cm toward to depth, respectively. In case of air, practical range was extended toward depth without energy loss. Irradiation on intracavitary is using straight and beveled type cones of 2.5, 3.0, 3.5 $cm{\phi}$, and maximum and effective $80\%$ dose depth increases while electron beam energy and size of electron cone increase. In case of contaminated X-ray, as the energy increase, straight type cones were more highly appeared then beveled type. The output factor of intracavitary small field electron cone was $15{\sim}86\%$ of standard external electron cone($15{\times}15cm^2$) and straight type was slightly higher then beveled type.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.234-240
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• 2001

Using RF magnetron sputtering, amorphous carbon(a-C) thin films as electron filed emitter were fabricated. these a-C thin films were deposited on Si(001) substrate at several temperatures. The field electron emission property of these a-C thin films was estimated by a diode technique. As the result, we observed that the field emission properties of the films were changed singnificantly with the substrate temperature and structural features of a-C film. The field emission properties were promoted by higher substrate temperatures. Furthermore N-doped a-C film exhibits more field emission property than that of undoped a-C film. These results are explained as change of surface morphology and structural properties of a-C film.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.148-151
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• 2011

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.