• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 한국세라믹학회지
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• 제45권9호
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• pp.549-555
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• 2008

The thermal barrier coating must withstand erosion when subjected to flowing gas and should also maintain good stability and mechanical properties while it must also protect the turbine component from high temperature, hot corrosion, creep, and oxidation during operation. In this study we investigated the influence of subsurface layer, $Al_2O_3$ or NiCrCoAIY bond coat layer, on the indentation damage behavior of YSZ thermal barrier coating layers deposited by electron beam physical vapor deposition (EB-PVD). The bond coat is deposited using different process such as air plasma spray (APS) or spray of high velocity oxygen fuel (HVOF) and the thickness is varied. Hertzian indentation technique is used to induce micro damages on the coated layer. The stress-strain behaviors are characterized by results of the indentation tests.

• 한국결정성장학회지
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• 제29권6호
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• pp.308-316
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• 2019

전자빔 물리기상증착기술(EBPVD)은 주상형 성장거동과 같이 고온에서의 구조 안정성에 기여할 수 있는 특성으로 인해 터빈블레이드 등과 같은 항공기 엔진 고온부품의 열차폐 코팅(TBC) 제조기술로 개발되어 상용화된 기술이다. 전자빔 증착으로 열·기계적 특성이 상용화 가능한 수준에 만족하는 고품질 열차폐 코팅제조를 위해서는 성장거동, 균일두께형성 등과 같은 구조적 요소의 제어가 반드시 수반되어야 한다. 본 연구에서는 실품형상에 근사한 터빈 블레이드 mock-up에 대한 기하학적 코팅인자 조건에 따른 7YSZ(7 wt% 이트리아 안정화 지르코니아) 열차폐 코팅의 성장거동과 구조변화를 고찰하였으며, 전산모사 기법을 활용한 기하학적 코팅인자 조건에 따른 코팅성장거동 모델링을 수행하여 실제 코팅결과와 비교하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.388-388
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• 2011

Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. The physical properties of graphene depend directly on the thickness. These properties lead to the possibility of its application in high-performance transparent conducting films (TCFs). Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ~60 ${\Omega}/sq$ and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. Here, we report an ingenious strategy, irradiation of MeV electron beam (e-beam) at room temperature under ambient condition,for obtaining size-homogeneous gold nanoparticle decorated on graphene. The nano-particlization promoted by MeV e-beam irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping, and energy dispersive X-ray spectroscopy. These results clearly revealed that gold nanoparticle with 10~15 nm in mean size were decorated along the surface of the graphene after 1.0 MeV-e-beam irradiation. The fabrication high-performance TCF with optimized doping condition showed a sheet resistance of ~150 ${\Omega}/sq$ at 94% transmittance. A chemical transformation and charge transfer for the metal gold nanoparticle were systematically explored by X-ray photoelectron spectroscopy and Raman spectroscopy. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.49-53
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• 2010

Microstructural origins of leakage current and physical degradation during operation in product-quality AlGaN/GaN high electron mobility transistor (HEMT) devices were investigated using photon emission microscopy (PEM) and transmission electron microscopy (TEM). AlGaN/GaN HEMTs were fabricated with metal organic chemical vapor deposition on semi-insulating SiC substrates. Photon emission irregularity, which is indicative of gate leakage current, was measured by PEM. Site specific TEM analysis assisted by a focused ion beam revealed the presence of threading dislocations in the channel below the gate at the position showing strong photon emissions. Observation of electrically degraded devices after life tests revealed crack/pit shaped defects next to the drain in the top AlGaN layer. The morphology of the defects was three-dimensionally investigated via electron tomography.

• 한국정밀공학회지
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• 제18권8호
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• pp.11-17
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• 2001

Industrial use of physical vapor deposition(PVD) has been widely expanded during last two decades, and in the mean time plasma assistance in PVD has become an essential tool in preparing compound films with dense microstructure. The principles of electron beam-based plating, balanced and unbalanced magnetron sputtering and cathodic arc deposition. consisting three basic configuration of plasma assisted PVD(PAPVD)process, were reviewed. Recent technical development in PVD coating process were discussed. This paper tries to show tendency for developing new coating film on cutting tools.

• 한국진공학회지
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• 제4권S2호
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• pp.24-29
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• 1995

The magnetic amd magneto-optical(MO)properties of Co-based multilayered(ML)films are known to vary sensitively according to the manufacturing methods and the film microstructures. Co/Pd and Co/Pt ML films with ultrathin layers of Co were prepared by alternating deposition in an ultrahigh-vacuum physical-vapor-deposition system. The individual layer thicknesses of the samples were estimated making use of the angular positions of x-ray diffraction peaks. The magnetic and MO properties were investigated, and correlated systematically to the structural parameters of the films. A Kerr spectrometer was self-manufactured to measure the MO properties such as Kerr rotation angle, ellipticity and reflectivity. The rms surface roughness was also measured using atomic force microscopy. Some of the samples showed good properties for MO medium, such as large perpendicular magnetic anisotropy and Kerr rotation, and perfect squareness of the magnetic hysteresis loop.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.318.1-318.1
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• 2014

Metal nano-crystals have been received much attentions owing to their excellent catalytic property and surface plasmon effect. In the last decade, many studies on synthesizing well-dispersive nanoparticles and on understanding their distinct physical properties have been performed. There were tremendous reports revealing the electrochemical activities and enhancement of surface plasmonic effect were dependent mainly on the size, shape, and composition. So far, most fabrication methods have been based on vacuum based deposition techniques, such as chemical vapor deposition and electron-beam evaporation, and then annealed them to transform into the nanoparticles. Recently, there were several reports regarding to the photoinduced nano-crystal synthesis as an effective way to produce the metal nanoparticles. In this study, we report synchrotron x-ray mediated synthesis of Au nanoparticles on ZnO nanowires. ZnO nanowires were fabricated by hydrothermal method, and then they were dip into a solution having Au clusters. Detailed structural evolution of Au nanoparticles was investigated using scanning electron microscopy and photoluminescence measurements. The results on formation of well-dispersive Au nanoparticles on ZnO nanowires will be presented.

• 공업화학
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• 제16권6호
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• pp.742-748
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• 2005

투명전극재료 indium tin oxide (ITO) 필름은 평판 디스플레이 전극재료로 널리 사용되고 있다. 이러한 ITO 필름은 마그네트론 스퍼터링법, 기상화학증착법 및 전자빔증착법 등의 방법으로 제조되어지고 있다. 본 실험에서는 전자빔 증착법으로 무게비로 $SnO_2$가 10%, $In_2O_3$가 90%인 ITO 타겟을 다른 플라스틱 기판보다 높은 유리전이 온도($Tg=330^{\circ}C$)를 가지는 polycyclic olefin polymer (POP) 플라스틱 기판에 증착시켰다. 본 연구에서는 ITO 박막의 물리적, 전기적 및 광학적 성질에 영향을 미치는 중요한 변수라 할 수 있는 기판온도와 산소도입속도가 증착된 ITO 박막의 전기적 및 광학적 성질에 미치는 영향을 살펴보았다. 주요공정 변수로는 온도 및 산소도입속도에 중점을 두어 실험하였으며 그 결과 8 sccm (Standard Cubic Centimeter per Minute)의 $O_2$, $200^{\circ}C$의 기판 온도, $5{\AA}/sec$의 증착 속도에서 $1000{\AA}$으로 증착된 ITO 박막 두께에서 우수한 전기적 광학적 성질인 $1.78{\times}10^{-3}{\Omega}{\cdot}cm$ 비저항 및 85% 광투과율을 얻을 수 있었다.

• The Korean Journal of Ceramics
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• 제4권4호
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• pp.340-344
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• 1998

Failure mechanisms were investigated for the two layer thermal barrier coatings consisting of NiCrAlY bond coat and $ZrO_2$-8wt.% $Y_2O_3$ ceramic coating during cyclic oxidation. $Al_2O_3$ developed at the ceramic coating/bond coat interface first, followed by the Cr/Ni rich oxides such as $NiCr_2O_4$ and $Ni(Al, Cr)_2O_4$ during cyclic oxidation. It was observed that the spalling of ceramic coatings took place primarily within the NiCrAlY bond coat oxidation products or at the interface between the bond coat oxidation products and zirconia based ceramic coating or the bond coat. It was also observed that the fracture within these oxidation products occurred with the formation of $Ni(Cr, Al)_2O_4$ spinel or Cr/Ni rich oxides. It was therefore concluded that the formation of these oxides was a life-limiting event for the thermal barrier coatings.