• Progress in Medical Physics
• /
• v.20 no.2
• /
• pp.97-105
• /
• 2009

Absorbed dose to water based protocols recommended that plane-parallel chambers be calibrated against calibrated cylindrical chambers in a high energy electron beam with $R_{50}$>7 $g/cm^2$ (E${\gtrsim}$16 MeV). However, such high-energy electron beams are not available at all radiotherapy centers. In this study, we are compared the absorbed dose to water determined according to cross-calibration method in a high energy electron beam of 16 MeV and in electron beam energies of 12 MeV below the cross-calibration quality remark. Absorbed dose were performed for PTW 30013, Wellhofer FC65G Farmer type cylindrical chamber and for PTW 34001, Wellhofer PPC40 Roos type plane-parallel chamber. The cylindrical and the plane-parallel chamber to be calibrated are compared by alternately positioning each at reference depth, $Z_{ret}=0.6R_{50}-0.1$ in water phantom. The $D_W$ of plane-parallel chamber are derived using across-calibration method at high-energy electron beams of 16, 20 MeV. Then a good agreement is obtained the $D_W$ of plane-parallel chamber in 12 MeV. The agreement between 20 MeV and 12 MeV are within 0.2% for IAEA TRS-398.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.10a
• /
• pp.326-329
• /
• 2005

As a flexible method to fabricate sub-micrometer patterns, Focused Ion Beam (FIB) instrument and Self-Assembled Monolayer (SAM) resist are introduced in this work. FIB instrument is known to be a very precise processing machine that is able to fabricate micro-scale structures or patterns, and SAM is known as a good etch resistance resist material. If SAM is applied as a resist in FIB processing fur fabricating nano-scale patterns, there will be much benefit. For instance, low energy ion beam is only needed for machining SAM material selectively, since ultra thin SAM is very sensitive to $Ga^+$ ion beam irradiation. Also, minimized beam spot radius (sub-tens nanometer) can be applied to FIB processing. With the ultimate goal of optimizing nano-scale pattern fabrication process, interaction between SAM coated specimen and $Ga^+$ ion dose during FIB processing was observed. From the experimental results, adequate ion dose for machining SAM material was identified.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.24 no.10 s.181
• /
• pp.2597-2602
• /
• 2000

The most effective means of evaluating remaining life is through the creep testing of samples removed from the component. But sampling of large specimen from in-service component is actually impossible. So, sampling device and small-specimen creep tester have been applied. Sampling device has been devised to extract mechanically small samples by hemispherical, diamond -coated cutter from the surface of turbine rotor bores and thick-walled pipes without subsequent weld repairs requiring post weld heat treatment. A method of manufacturing small creep specimen, 2min gage diameter and 10min gage length, using electron beam welding to attach grip section, has been proven. Small-specimen creep tester has been designed to control atmosphere to prevent stress increment by oxidation during experiment. To determine whether the small specimens successfully reproduce the behavior of large specimens, creep rupture tests for small and large specimens have been performed at identical conditions. Creep rupture times based on small specimens have closely agreed within 5% error compared with that of large specimen. The errors in rupture time have decreased at longer test period. This comparison validates the procedure for fabricating and testing on small specimen. This technique offers potential as an efficient method for remaining life assessment by direct sampling from in -service high temperature components.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.7
• /
• pp.56-61
• /
• 1997

I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A $l_{0.48}$As pseudomorphic high electron mobility transistor (P-HEMT) structures were grown on semi-insulating InP substrates by molecular beam epitzxy method. The hall effect measuremetn was used to measure the electrical properties and the photoluminescence (PL) measurement was used to measure the electrical properties and the photoluminescence(PL) measurement for optical propety. By the cross-sectional transmission electron microscopy (XTEM) investigation of the V and X shape defects including slip with angle of 60.deg. C and 120.deg. C to surface in the sampel, the defects formation mecahnism in the I $n_{0.52}$A $l_{0.48}$As epilayers on InP substrates could be explained with the different thermal expansion coefficients between I $n_{0.52}$A $l_{0.48}$As epilayers and InP substrate.d InP substrate.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.291-291
• /
• 2010

Electron-beam lithography (EBL) process is a versatile tool for a fabrication of nanostructures, nano-gap electrodes or molecular arrays and its application to nano-device. However, it is not appropriate for the fabrication of sub-5 nm features and high-aspect-ratio nanostructures due to the limitation of EBL resolution. In this study, the precision assembly and alignment of DNA molecule was demonstrated using sub-5 nm nanostructures formed by a combination of conventional electron-beam lithography (EBL) and plasma ashing processes. The ma-N2401 (EBL-negative tone resist) nanostructures were patterned by EBL process at a dose of $200\;{\mu}C/cm2$ with 25 kV and then were ashed by a chemical dry etcher at microwave (${\mu}W$) power of 50 W. We confirmed that this method was useful for sub-5 nm patterning of high-aspect-ratio nanostructures. In addition, we also utilized the surface-patterning technique to create the molecular pattern comprised 3-(aminopropyl) triethoxysilane (APS) as adhesion layer and octadecyltrichlorosilane (OTS) as passivation layer. DNA-templated gold nanoparticle chain was attached only on the sub-5 nm APS region defined by the amine groups, but not on surface of the OTS region. We were able to obtain DNA molecules aligned selectively on a SiO2/Si substrate using atomic force microscopy (AFM).

• Applied Microscopy
• /
• v.50
• /
• pp.22.1-22.6
• /
• 2020

In-situ transmission electron microscopy (TEM) holders that employ a chip-type specimen stage have been widely utilized in recent years. The specimen on the microelectromechanical system (MEMS)-based chip is commonly prepared by focused ion beam (FIB) milling and ex-situ lift-out (EXLO). However, the FIB-milled thin-foil specimens are inevitably contaminated with Ga⁺ ions. When these specimens are heated for real time observation, the Ga⁺ ions influence the reaction or aggregate in the protection layer. An effective method of removing the Ga residue by Ar⁺ ion milling within FIB system was explored in this study. However, the Ga residue remained in the thin-foil specimen that was extracted by EXLO from the trench after the conduct of Ar⁺ ion milling. To address this drawback, the thin-foil specimen was attached to an FIB lift-out grid, subjected to Ar⁺ ion milling, and subsequently transferred to an MEMS-based chip by EXLO. The removal of the Ga residue was confirmed by energy dispersive spectroscopy.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.34 no.11
• /
• pp.1637-1642
• /
• 2010

In this paper, we present the fabrication of a high-quality diffractive-lens mold having submicron patterns, which is suitable for an ultra-slim optical system. In order to fabricate high-quality diffractive lens with a variety of submicron patterns, the multi-alignment method was used; high-resolution electron-beam lithography and FAB plasma etching were carried out to obtain the patterns. The most important key technology in the multi-alignment method is to reduce alignment error, lithography error, and etching error. In this paper, these major fabrication errors were minimized, and a high-quality diffractive lens with a diameter of $267\;{\mu}m$ (NA = 0.25), minimum pattern width of 226 nm, and thickness of 819 nm was successfully fabricated.

• Progress in Medical Physics
• /
• v.11 no.2
• /
• pp.147-155
• /
• 2000

Patient dose verification is one of the most important parts in quality assurance of the treatment delivery for radiation therapy. The dose distributions may be meaningfully improved by modulating two dimensional intensity profile of the individual high energy radiation beams In this study, a new method is presented for the pre-treatment dosimetric verification of these two dimensional distributions of beam intensity by means of a charge coupled device video camera-based fluoroscopic device (henceforth called as CCD-VCFD) as a radiation detecter with a custom-made software for dose calculation from fluorescence signals. This system of dosimeter (CCD-VCFD) could reproduce three dimensional (3D) relative dose distribution from the digitized fluoroscopic signals for small (1.0$\times$1.0 cm$^2$ square, ø 1.0 cm circular ) and large (30$\times$30cm$^2$) field sizes used in intensity modulated radiation therapy (IMRT). For the small beam sizes of photon and electron, the calculations are performed In absolute beam fluence profiles which are usually used for calculation of the patient dose distribution. The good linearity with respect to the absorbed dose, independence of dose rate, and three dimensional profiles of small beams using the CCD-VCFD were demonstrated by relative measurements in high energy Photon (15 MV) and electron (9 MeV) beams. These measurements of beam profiles with CCD-VCFD show good agreement with those with other dosimeters such as utramicro-cylindrical (UC) ionization chamber and radiographic film. The study of the radiation dosimetric technique using CCD-VCFD may provide a fast and accurate pre-treatment verification tool for the small beam used in stereotactic radiosurgery (SRS) and can be used for verification of dose distribution from dynamic multi-leaf collimation system (DMLC).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.333-333
• /
• 2011

We have investigated the breakdown properties in liquids by high voltage pulse system. High voltage pulse power system is consisted of the Marx-generator with two capacitors (0.5 ${\mu}F$, withstanding voltage is 40 kV), to which the charging voltage can be applied to maximum 30 kV DC, spark gap switch and charging resistor of 20 $M{\Omega}$. We have made use of tungsten pin electrodes of anode-cathode (A-K), which are immersed into the liquids. The breakdown voltage and current signals are measured by high voltage probe (Tektronix P6015A) and current monitor (IPC CM-1.S). Especially the high speed breakdown or plasma propagation characteristics in the pulsed A-K gap have been investigated by using the high speed ICCD camera. We have measured the electron temperature through the Boltzmann plot method from the breakdown spectrums. Here the A-K gap has been changed by 1 mm, 2 mm, and 3 mm. The used liquids are distilled water and solution of salt (0.9 %). The output voltage and current signals at breakdown in distilled water are shown to be bigger than those in saline solution. The breakdown voltage and current characteristics in liquids will be discussed in accordance with A-K gap distances. It is also found that the electron temperatures and plasma densities in liquids are decreased in conformity with A-K gap.

• Polymer(Korea)
• /
• v.35 no.2
• /
• pp.157-160
• /
• 2011

In this paper, poly (dimethyl siloxane) (PDMS) was modified using electron beam irradiation and its property was investigated. PDMS sheets prepared using a conventional thermal curing method were irradiated by electron beams at absorbed doses between 20 and 200 kGy and their properties were characterized using swelling degree and contact angle measurements, universal testing machine (UTM), thermogravimetric analyzer (TGA), and X -ray photoelectron spectrometer (XPS). The results of the swelling degree measurements, UTM, and TGA revealed that the swelling degree of the irradiated PDMS sheets was reduced down to 24% in comparison to the control sheet, and their compression strength and thermal decomposition temperature increased up to maximum 2.5 MFa and $10^{\circ}C$, respectively, due to the increase in crosslinking density by irradiation. In addition, on the basis of the results of contact angle measurements and XPS, the wettability of the PDMS sheets was enhanced up to 24% owing to the generation of hydrophilic functional groups on the PDMS surface by oxidation during electron beam irradiation.