• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.70-70
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• 1999

• 한국세라믹학회지
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• 제41권2호
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• pp.102-105
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• 2004

ZnO-In$_2$O$_3$ films were fabricated on Corning 1737 glass substrate by an electron beam evaporation technique and their characteristics were investigated. The composition of ZnO-In$_2$O$_3$ films had a marked effect on the electrical properties of the films. The ZnO-In$_2$O$_3$ films showed superior transparent-conducting characteristics with increase of Zn content. The resistivity and carrier concentration of the film having Zn content of 45 at% are 4.45${\times}$10$^{-3}$ cm and 3.1${\times}$10$^{19}$ cm$^{-3}$ , respectively. Also, the transmittance was higher than 80% throughout the visible range. The average roughness of the film was 14.6 $\AA$ in terms of root mean square.

• 한국에너지공학회:학술대회논문집
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• 한국에너지공학회 1995년도 춘계학술발표회 초록집
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• pp.41-44
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• 1995

The electrochromic WO$_3$ thin films were prepared by using an electron - beam evaporation technique. The influence of the electron - beam evaporation conditions. especially the vacuum pressure, and resistance of ITO substrate on the structural and electrochromic properties of the investigated film was presented. This films showed electrochromic behavior in an aqueous electrolyte of 1 M H$_2$SO$_4$. Among these WO$_3$ thin films, films prepared at a vacuum pressure of 10$^{-4}$ mbar were found to be most stable in terms of cycling durability. The chemical stability of film against dissolution in the aqueous solution was also shown to depend on the quantity of water in the film.

• 한국분말재료학회지
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• 제12권3호
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• pp.167-173
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• 2005

Production of weakly agglomerated nanopowders with the characteristic size of about 10 nm and a narrow particle size distribution is still a topical problem especially if the matter is an acceptable output (>50 g/hour), a high purity of the final product, and a low (energy consumption. The available experience and literature data show that the most promising approach to production of such powders is the evaporation-condensation method, which has a set of means for heating of the target. From this viewpoint the use of pulsed electron accelerators for production of nanopowders is preferable since they allow a relatively simple adjustment of the energy, the pulse length, and the pulse repetition rate. The use of a pulsed electron accelerator provides the following opportunities: a high-purity product; only the target and the working gas will interact and their purity can be controlled; evaporation products will be removed from the irradiation zone between pulses; as a result, the electron energy will be used more efficiently; adjustment of the particle size distribution and the characteristic size of particles by changing the pulse energy and the irradiated area. Considering the obtained results, we developed a design and made an installation for production of nanopowders, which is based on a hollow-cathode pulsed gas-filled diode. The use of a hollow-cathode gas-filled diode allows producing and utilizing an electron beam in a single chamber. The emission modulation in the hollow cathode will allow forming an electron beam 5 to 100 ms long. This will ensure an exact selection of the beam energy. By now we have completed the design work, manufactured units, equipped the installation, and began putting the installation into operation. A small amount of nanopowders has been produced.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2172-2174
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• 2005

MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.468-473
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• 2008

A MgO layer is used as electrode protective film in the alternating current plasma display panel (AC PDP). The properties of MgO layer are thought to be one of the most important factors that affects the panel reliability through the firing voltage variation. In this study, we investigated the relations between the surface characteristics and e-beam evaporation process parameters such as deposition rate, temperature of substrate and distance between the MgO pellet and substrate. To produce the MgO layer of (200) crystal orientation, we suggest the high temperature of the substrate, the long distance between the pellet and substrate and the high deposition rate.

• 반도체디스플레이기술학회지
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• 제2권4호
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

• 한국광학회지
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• 제13권3호
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• pp.209-214
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• 2002

기판의 표면거칠기가 반사경의 산란에 미치는 영향을 조사하였다. 기판의 표면거칠기가 다른 다섯 종류의 기판에 이온빔 스퍼터링 방법과 전자총 증착 방법으로 각각 반사율이 1에 가까운 고반사율 박막을 증착하고 산란을 TIS 방법으로 측정하였다. 기판의 표면거칠기가 2$\AA$ 이상인 경우의 기판의 산란에 대한 반사경 산란 비율은 표면거칠기가 2$\AA$ 미만인 경우의 산란 비율에 비하여 급격한 증가를 나타냄을 알 수 있었으며, 기판의 표면거칠기가 낮은 경우 반사경의 산란은 기판의 표면거칠기보다 반사경을 구성하는 박막의 미세구조에 의존하는 것으로 판단되었다. 한편 반사경 중에서 가장 작은 산란은 2.1 ppm이었고, 이것은 표면거칠기 0.23$\AA$인 기판에 이온빔 스퍼터링 방법으로 제작되었다.

• Progress in Superconductivity
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• 제10권2호
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• pp.99-102
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• 2009

We report our development of the fabrication process of sub-micron scale $Al-AlO_x-Al$ tunnel junction by using electron-beam lithography and double-angle shadow evaporation technique. We used double-layer resist to construct a suspended bridge structure, and double-angle electron-beam evaporation to form a sub-micron scale overlapped junction. We adopted an e-beam insensitive resist as a bottom sacrificing layer. Tunnel barrier was formed by oxidation of the bottom aluminum layer between the bottom and top electrode deposition, which was done in a separate load-lock chamber. The junction resistance is designed and controlled to be 50 $\Omega$ to match the impedance of the transmission line. The junctions will be used in the broadband shot noise thermometry experiment, which will serve as a link between the electrical unit and the thermodynamic unit.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.311-312
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• 2005

By using 45$^{\circ}$ obliqued evaporation method with electron beam system, uniformly vertical liquid crystal (LC) alignment was achieved. And a high pretilt angles of about 2.5$^{\circ}$ were measured. Also, it was verified that there are no variations of pretilt angle as a function of $SiO_x$ thin film thickness 20nm and 50nm. A good LC alignment states were observed at annealing temperature of 250$^{\circ}C$. The high pretilt angle and the good thermal stability of LC alignment by 45$^{\circ}$ obliqued electron beam evaporation method on the $SiO_x$ thin film can be achieved.