• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.117-123
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• 2004

A 30 nm $In_{0.7}GaAs$ High Electron Mobility Transistor (HEMT) with triple-gate has been successfully fabricated using the $SiO_2/SiN_x$ sidewall process and BCB planarization. The sidewall gate process was used to obtain finer lines, and the width of the initial line could be lessened to half by this process. To fill the Schottky metal effectively to a narrow gate line after applying the developed sidewall process, the sputtered tungsten (W) metal was utilized instead of conventional e-beam evaporated metal. To reduce the parasitic capacitance through dielectric layers and the gate metal resistance ($R_g$), the etchedback BCB with a low dielectric constant was used as the supporting layer of a wide gate head, which also offered extremely low Rg of 1.7 Ohm for a total gate width ($W_g$) of 2x100m. The fabricated 30nm $In_{0.7}GaAs$ HEMTs showed $V_{th}$of -0.4V, $G_{m,max}$ of 1.7S/mm, and $f_T$ of 421GHz. These results indicate that InGaAs nano-HEMT with excellent device performance could be successfully fabricated through a reproducible and damage-free sidewall process without the aid of state-of-the-art lithography equipment. We also believe that the developed process will be directly applicable to the fabrication of deep sub-50nm InGaAs HEMTs if the initial line length can be reduced to below 50nm order.

• Journal of Electrochemical Science and Technology
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• v.1 no.1
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• pp.31-38
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• 2010

In this study, we have demonstrated the fine structure effect of PdCo electrocatalyst on oxygen reduction reaction activity with different alloy composition and heat-treatment time. In order to identify the intrinsic factors for the electrocatalytic activity, various X-ray analyses were used, including inductively coupled plasma-atomic emission spectrometer, transmission electron microscopy, X-ray diffractometer, and X-ray Absorption Spectroscopy technique. In particular, extended X-ray absorption fine structure was employed to extract the structural parameters required for understanding the atomic distribution and alloying extent, and to identify the corresponding simulated structures by using FEFF8 code and IFEFFIT software. The electrocatalytic activity of PdCo alloy nanoparticles for the oxygen reduction reaction was evaluated by using rotating disk electrode technique and correlated to the change in structural parameters. We have found that Pd-rich surface was formed on the Co core with increasing heating time over 5 hours. Such core shell structure of PdCo/C showed that a superior oxygen reduction reaction activity than pure Pd/C or alloy phase of PdCo/C electrocatalysts, because the adsorption energy of adsorbates was apparently reduced by lowering the dband center of the Pd skin due to a combination of the compressive strain effect and ligand effect.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.12
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• pp.1828-1835
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• 2012

In this paper, a conceptual design and a detailed design of novel cylindrical magnetic levitation stage is introduced. This is came from planar-typed magnetic levitation stage. The proposed stage is composed of cylinder-typed permanent magnet array and semi-cylinder-typed 3 phase winding module. When a proper current is induced at winding module, a magnetic levitation force between the permanent magnet array and winding module is generated. The proposed stage can precisely move the cylinder to rotations and translations as well as levitations with the magnetic levitation force. This advantage is useful to make a nano patterning on the surface of cylindrical specimen by using electron beam lithography under vacuum. Two methods are used to calculate required magnetic levitation forces. The one is 2D FEM analysis, the other is mathematical modeling. This paper shown that results of two methods are similar. An assistant plate is introduced to reduce required currents of winding module for levitations in vacuum. The mathematical model of cylindrical magnetic levitation stage is used for dynamic simulation of magnetic levitations. A lead-lag compensator is used for control of the model. Simulation results shown that the detail designed model of the cylindrical magnetic levitation stage with the assistant plate can be controlled very well.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.202-203
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• 2006

In the AC PDP, the MgO film is used as electrode protective film. This film must provide excellent ion bombardment protection, high secondary electron emission, and should be high transparent to visible radiation. In this study, we investigated the relations between the crystal orientation and e-beam evaporation process parameters. The crystal orientation of the MgO layer depends on the conditions of deposition. The parameters are the thickness of the MgO film $1000{\AA}-6500{\AA}$, the deposition rate $200{\AA}/min{\sim}440{\AA}/min$, the temperature $150^{\circ}C{\sim}250^{\circ}C$, and the distance between crucible and substrate 11cm ${\sim}$ 14cm. The temperature of substrate and evaporation rate of source material, or deposition rate of the film, are definitely related to the crystal orientation of the MgO thin film. The crystal orientation can be changed by the distance between the target(MgO tablet) and the substrate. However, the crystal orientation is not much affected by the thickness of MgO thin film.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.224-227
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• 2009

Nanofabrication is an essential process throughout industry. Technologies that produce general nanofabrication, such as e-beam lithography, dip-pen lithography, DUV lithography, immersion lithography, and laser interference lithography, have drawbacks including complicated processes, low throughput, and high costs, whereas nano-transfer printing (nTP) is inexpensive, simple, and can produce patterns on non-plane substrates and multilayer structures. In general nTP, the coherency of gold-deposited stamps is strengthened by using SAM treatment on substrates, so the gold patterns are transferred from stamps to substrates. However, it is hard to apply to transfer other metallic materials, and the existing nTP process requires a complicated surface treatment. Therefore, it is necessary to simplify the nTP technology to obtain an easy and simple method for fabricating metal patterns. In this paper, asnTP process with poly vinyl alcohol (PVA) mold was proposed without any chemical treatment. At first, a PVA mold was duplicated from the master mold. Then, a Mo layer, with a thickness of 20 nm, was deposited on the PVA mold. The Mo deposited PVA mold was put on the Si wafer substrate, and nTP process progressed. After the nTP process, the PVA mold was removed using DI water, and transferred Mo nano patterns were characterized by a Scanning electron micrograph (SEM) and Energy Dispersive spectroscopy (EDS).

• Macromolecular Research
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• v.12 no.1
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• pp.119-126
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• 2004

In this study, the influence of silane coupling agents, featuring different organo-functional groups on the interlaminar and thermal properties of woven glass fabric-reinforced nylon 6 composites, has been by means of short-beam shear tests, dynamic mechanical analysis, scanning electron microscopy, and thermogravimetric analysis. The results indicate that the fiber-matrix interfacial characteristics obtained using the different analytical methods agree well with each other. The interlaminar shear strengths (ILSS) of glass fabric/nylon 6 composites sized with various silane coupling agents are significantly improved in comparison with that of the composite sized commercially. ILSS of the composites increases in the order: Z-6076 with chloropropyl groups in the silanes > Z-6030 with methacrylate groups> Z-6020 with diamine groups; this trend is similar to that of results found in an earlier study of interfacial shear strength. The dynamic mechanical properties, the fracture surface observations, and the thermal stability also support the interfacial results. The improvement of the interfacial properties may be ascribed to the different chemical reactivities of the reactive amino end groups of nylon 6 and the organo-functional groups located at the ends of the silane chains, which results from the increased chemical reactivity in order chloropropyl > methacrylate > diamine.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.103-103
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• 1999

CeO2 는 cubic 구조의 일종인 CeF2 구조를 가지며 격자 상수가 0.541nm로 Si의 격자 상수 0.543nm와 거의 비슷하여 Si과의 부정합도가 0.35%에 불과하여 CeO2를 Si 기판 위에 에피택셜하게 성장시킬 수 있는 가능성이 크다. 따라서 SOI(Silicon-On-Insulator) 구조의 실현을 위하여 Si 기판위에 CeO2를 에피택셜하게 성장시키려는 많은 노력이 있었다. 또한 CeO2 는 열 적으로 대단히 안정된 물질로서 금속/강유전체/반도체 전계효과 트랜지스터(MFSFET : metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이에 완충층으로 사용되어 강유전체의 구성 원자와 Si 원자들간의 상호 확산을 방지함으로써 경계면의 특성을 향상시기키 위해 사용된다. e-beam evaporation와 laser ablation에 의한 Si 기판 위의 CeO2 격자 성장에 관한 많은 보고서가 있다. 이 방법들은 대규모 생산 공정에서 사용하기 어려운 반면 RF-magnetron sputtering은 대규모 반도체 공정에 널리 쓰인다. Sputtering에 의한 Si 기판위의 CeO2 막의 성장에 관한 보고서의 수는 매우 적다. 이 논문에서는 Ce target을 사용한 reactive rf-magnetron sputtering에 의해 Si(100) 과 Si(111) 기판위에 성장된 CeO2 의 구조 및 전기적 특성을 보고하고자 한다. 주요한 증착 변수인 증착 power와 증착온도, Seed Layer Time이 성장막의 결정성에 미치는 영향을 XRD(X-Ray Diffractometry) 분석과 TED(Transmission Electron Diffration) 분석에 의해 연구하였고 CeO2 /Si 구조의 C-V(capacitance-voltage)특성을 분석함으로써 증차된 CeO2 막과 실리콘 기판과의 계면 특성을 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.

• Journal of Information Display
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• v.7 no.3
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• pp.13-18
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• 2006

Currently, the flexible organic light emitting devices (OLEDs) are investigated. They are very vulnerable to moisture, and thus have been found to show some problems. Thus, an effective barrier layer is needed to protect from moisture in air. We deposited thin films with magnesium oxide (MgO) and silicon oxide $(SiO_{2})$ compounds mixed at various mixture ratios on flexible polyether sulfone (PES) substrates by an electron-beam evaporator to investigate their applizability for transparent barrier applications. In this study, we found that as the MgO fraction increased, thin films comprised of MgO and $(SiO_{2})$ compounds became more amorphous and their surface morphologies become smoother and denser. In addition, zirconium oxide $(ZrO_{2})$ was added to the above-mentioned compound mixtures. $ZrO_{2}$ made thin mixture films more amorphous and made the surface morphology denser and more uniform. The water vapor transmission rates (WVTRs) of the whole films decreased rapidly. The best WVTR was obtained by depositing thin films of Mg-Si-Zr-O compound among the whole thin films. As the thin mixture films became more amorphous, and the surface morphology become denser and more uniform, the WVTRs decreased. Therefore, the thin mixture films became more suitable for flexible OLED applications as transparent passivation layers against moisture in air.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2197-2202
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• 2014

In this paper, we report on an investigation of highly sensitive sensing performance of a hydrogen sensor composed of palladium (Pd) nanowires. The Pd nanowires have been grown by electrodeposition into nanochannels and liberated from the anodic aluminum oxide (AAO) template by dissolving in an aqueous solution of NaOH. A combination of photo-lithography, electron beam lithography and a lift-off process has been utilized to fabricate the sensor using the Pd nanowire. The hydrogen concentrations for 2% and 0.1% were obtained from the sensitivities (${\Delta}R/R$) for 1.92% and 0.18%, respectively. The resistance of the Pd nanowires depends on absorption and desorption of hydrogen. Therefore, we expect that the Pd nanowires can be applicable for detecting highly sensitive hydrogen gas at room temperature.