• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.8-8
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• 2003

Electron-phonon interaction plays a significant role in forming of colossal magnetoresistance effect (CMR). Polaron formation was observed by neutron diffraction and by extended X-ray absorption fine structure (EXAFS) analysis. Local probe as given by the EXAFS is a useful method to study the polaronic charge and its dependence on temperature and ions size. Here we present the EXAFS study of polaronic charge in La/sub 0.7/Ca/sub 0.3-X/Ba/sub X/MnO₃ compositions. The single phase La/sub 0.7/Ca/sub 0.3-X/Ba/sub X/MnO₃ manganites (x=0; 0.03; 0.06, ..., 0.3) were prepared by ceramic technology [1]. The Curie temperature was determined by extrapolation of the temperature dependence of the magnetization (down to zero magnetization). EXAFS experiments were carried out at the 7C EC beam line of the Pohang Light Source (PLS) in Korea. The atomic pair distribution functions (PDF) were obtained by re-regularization method [2] from filtered spectra. The PDF for the x=0.3 sample showed a single peak function and for x=0.0, 0.03, 0.06, 0.09, 0.12 compositions were asymmetric in agreement with a small Jahn-Teller elongation of two (short and long) bonds of the MnO/sub 6/ octahedron. Dispersion, σ/sub Min-O//sup 2/, and asymmetry, σ/sub Min-O//sup 3/, of the Mn-O bond distances varied significantly with x and showed a maximums at x=0.09. The maximum of σ/sub Min-O//sup 2/ is caused by increase of dynamic rms displacements of the Mn-O distances near the T/sub C/. The observed x dependence of σ/sub Min-O//sup 3/ reflects the reduction of charge carriers mobility at approaching to T/sub C/ from low as well as high temperatures.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.73-80
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• 2007

For the sub-65 nm CMOS process, it is necessary to develop a new silicide material and an accompanying process that allows the silicide to maintain a low sheet resistance and to have an enhanced thermal stability, thus providing for a wider process window. In this study, we have evaluated the property and unit process compatibility of newly proposed composite silicides. We fabricated composite silicide layers on single crystal silicon from $10nm-Ni_{1-x}Co_x/single-crystalline-Si(100),\;10nm-Ni_{1-x}Co_x/poly-crystalline-\;Si(100)$ wafers (x=0.2, 0.5, and 0.8) with the purpose of mimicking the silicides on source and drain actives and gates. Both the film structures were prepared by thermal evaporation and silicidized by rapid thermal annealing (RTA) from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, surface composition, were investigated using a four-point probe, a field emission scanning probe microscope, a field ion beam, an X-ray diffractometer, and an Auger electron depth profi1ing spectroscopy, respectively. Finally, our newly proposed composite silicides had a stable resistance up to $1100^{\circ}C$ and maintained it below $20{\Omega}/Sg$., while the conventional NiSi was limited to $700^{\circ}C$. All our results imply that the composite silicide made from NiCo alloy films may be a possible candidate for 65 nm-CMOS devices.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.422-426
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• 2008

The effects of an addition of $ZrO_2$ on the microstructure and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. MgO + a 200 ppm $ZrO_2$ protective layer prepared by e-beam evaporation exhibited a secondary electron emission coefficient ($\gamma$) that was improved by 21% compared to that of a pure MgO protective layer. The relative density and Vickers hardness increased with a further addition of $ZrO_2$. These results suggest that the discharge properties and optical properties of MgO protective layers are closely related to the relative density and Vickers hardness. The good optical and electrical properties of $\gamma$, at 0.080, a grain size of $19\;{\mu}m$ and an optical transmittance of 91.93 % were obtained for the MgO + 200 ppm $ZrO_2$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• Radiation Oncology Journal
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• v.16 no.3
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• pp.351-355
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• 1998

Cutaneous angiosarcomas are uncommon malignancies which account about 1$\%$ of sarcomas. They are found most commonly in the head and neck regions, frequently on the scalp. Although preferred treatment has been combined surgery and postoperative radiation therapy, the extensiveness and multiplicity of the lesions set limits to such an approach and the patient is often referred for radiotherapy without surgery. As the entire scalp usually needs to be treated, radiation therapy is a challenging problem to radiation oncology staffs. We report a case of angiosarcoma of the scalp, which was treated successfully by radiation therapy with a simple and repeatable method using mixed Photon and electron beam technique. Using a bolus to increase the surface dose of the scalp and to minimize dose to the normal tissues of the brain desirable but difficult technically to be well conformed to the three dimensional curved surface such as vertex of the head. A helmet made of thermoplastics filled with paraffin was elaborated and used for the treatment, resulting of the relatively uniform surface doses along the several points measured on the scalp, the difference among the points not exceeding 7$\%$ of the prescribed dose by TLD readings.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.180-180
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• 2013

반도체, 디스플레이와 같이 저압, 극청정 조건에서 진행되는 공정에서 발생한 오염입자는 수 율에 큰 영향을 미친다. 따라서 공정 중에 발생한 오염입자를 실시간으로 모니터링할 수 있는 장비에 대한 연구가 활발히 진행되고 있다. Particle Beam Mass Spectrometer (PBMS)는 저압에서 실시간으로 나노 입자의 크기를 측정할 수 있는 대표적인 장비 중 하나이다. 입자를 포함한 가스 유동이 PBMS로 유입되면, 우선 입자를 입자빔의 형태로 집속하는 공기역학렌즈를 통과하게 된다. 집속된 입자는 노즐에 의해서 가속되며, 이로 인해 충분한 관성을 가지게 된 입자는 양극과 음극, 필라멘트로 구성된 electron gun에서 전자충돌에 의해 포화상태로 하전된다. 하전한 입자는 electrostatic deflector에서 크기에 따라 분류되어 Faraday detector와 electrometer에 의해 측정된다. 그러나 공기역학렌즈는 입자의 크기가 작아질수록 집속 효율이 급격히 낮아진다는 문제점을 지니고 있다. 이는 입자가 작아질수록 점성에 의한 영향이 관성에 의한 영향보다 커짐으로써 나타나는 현상이다. 최근 이러한 문제점을 해결하기 위해 사중극자를 사용하여 입자를 집속시키는 방법이 대안으로 제시되었다. 사중극자는 서로 마주보는 쌍곡선 형태의 전극구조에 AC 전기장을 인가하는 방식을 사용한다. 사중극자의 중심은 정확히 평형점을 가지게 되며 입자는 사중극자 내에서 진동을 반복하며 평형점을 향해 모이게 된다. 입자의 크기가 작을수록 전기력에 의한 영향을 크게 받으므로 사중극자를 이용한 입자집속 방법은 나노입자의 집속에 있어 공기역학렌즈를 이용한 집속에 비해 이점을 지닌다. 또한 집속 하고자 하는 입자 대상이 바뀔 경우 구조를 바꿔야 하는 공기역학렌즈와 달리 사중극자를 이용한 방법은 AC 전기장을 조절하는 것 만으로 제어가 가능하다. 본 연구에서는 저압 조건에서 나노입자를 집속하기 위한 사중극자의 전극 구조를 이론적인 계산을 통하여 구하였다. 그 결과 0.1 torr의 압력 조건하에서 5~100 nm 범위의 기본 입자를 AC 전압과 진동수를 조절하여 집속할 수 있는 사중극자 형태를 설계하였다.

• Journal of the Mineralogical Society of Korea
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• v.23 no.3
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• pp.211-217
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• 2010

A micro-focus X-ray computed tomography (CT) was employed to determine quantitative phase analysis of skarn Zn-Pb-Cu ore by nondestructive visualization of the internal mineral distribution of a skarn ore. The micro CT images of the ore were calibrated to remove beam hardening artifacts, and compared with its scanning electron microscope (SEM) images to set the threshold of CT number range covering sulfide ore minerals. The volume ratio of sulfide and gangue minerals was calculated 20.5% and 79.5%, respectively. The quantitative 3D X-ray CT could be applied to analyse the distribution of economic minerals and their recovery.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

• Restorative Dentistry and Endodontics
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• v.24 no.4
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• pp.604-613
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• 1999

This study was performed to evaluate the effect of resin and filler type on the fracture toughness of light-activated composites. Experimental composites were prepared using urethane tetramethacrylate(UTMA) and bisphenol glycidylmethacrylate(Bis-GMA) monomers and five different types of silica fillers. Fracture toughness was measured by a single edge V-notched beam(SEVNB) method, which was discussed from ASTM E399-78. Rectangular bars of $2.5{\times}5{\times}26mm$ were prepared with experimental composites and a notch about 2.25mm deep was carved at the center of the long axis of the specimen using a dental diamond disk driven by a dental micro engine. The flexural test was carried out at a crosshead speed of 0.05mm/min and fracture surfaces were observed under scanning electron microscope. The results obtained were summarized as follows: 1. The fracture toughness values of UTMA-based composites were relatively higher than those of Bis-GMA-based composites. 2. The highest fracture toughness value was observed in the UTMA-based composite containing the $1.5{\mu}m$-spherical fillers. 3 Aging in the distilled water at $37^{\circ}C$ for 10 days showed the increase of fracture toughness, which was severer in the Bis-GMA-based composites than those of UTMA-based composites. 4. The AE amplitude occurring during the fracture toughness tests was the highest at the point of macroscopic fracture.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.383-389
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• 2001

We report on the design, fabrication, and characterization of 0.35${\mu}{\textrm}{m}$-gate AIGaAs/InGaAs PHEMTs for millimeter-wane applications. The epi-wafer structures were designed using ATLAS for optimum DC and AC characteristics, 0.351m-gate AIGaAs/rnGaAs PHEMTs having different gate widths and number of fingers were fabricated using electron beam lithography Dependence of RF characteristics of PHEMT on gate finger with and number of gate fingers have been investigated. PHEMT haying two 0.35$\times$60${\mu}{\textrm}{m}$$^2$ gate fingers showed the knee voltage, pinch-off voltage, drain saturation current density, and maximum transconductance of 1.2V, -1.5V, 275㎃/mm, and 260.17㎳/mm, respectively. The PHEMT showed fT(equation omitted)(current gain cut-off frequency) of 45㎓ and fmax(maximum oscillation frequency) of 100㎓. S$_{21}$ and MAG of the PHEMT were 3.6dB and 11.15dB, respectively, at 35㎓