• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.12
• /
• pp.1059-1068
• /
• 2016

This paper proposes slow wave structure(SWS) utilized to increase antenna gain of printed dipole antenna(PDA) and to suppress sidelobe level simultaneously, and makes sure of electrical characteristics of the antenna according to parameter variations of components of the slow wave structure. The printed slow wave structure which is composed of a dielectric substrate and a metal rods array is located on excited direction of the PDA, affecting the radiation pattern and its intensity. Parasitic elements of the metal rods are arrayed in narrow consistent gap and have a tendency to gradually decrease in length. In this paper, array interval, element length, and taper angle are selected as the parameter of the parasitic element that effects radiation characteristics. Magnitude and phase distribution of the electrical field are observed and analyzed for each parameter variations. On the basis of these results, while the radiation pattern is analyzed, array methods of parasitic elements of the SWS for high gain characteristics are provided. The proposed antenna is designed to be operated at the Wifi band(5.15~5.85 GHz), and parameters of the parasitic element are optimized to maximize antenna gain and suppress sidelobe. Simulated and measured results of the fabricated antenna show that it has wide bandwidth, high efficiency, high gain, and low sidelobe level.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.10
• /
• pp.805-810
• /
• 2012

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.