• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.253-257
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• 1998

Organic-based electroluminescent devices have attracted lots of interests because of their possible application as large-area flat pan디 display. In this study, current-voltage (I-V) characteristics of MEH-PPV thin films was investigated using various metal as a top electrode, where MEH-PPV thin films were prepared on 170 substrate by spin coating method and various metal such as Al, Ag, In, MgIn was deposited on MEH-PPV thin films as a top electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.121-124
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• 1998

Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.609-612
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• 1999

Organic electroluminescent(EL) devices have received a great deal of attention due to their potential application as full-color displays. They are attractive because of their capability of multicolor emission, ease of fabrication, and operation at a low driving voltage. In this study, single and multiple quantum-well structures consisting of Eu(TTA)$_3$(bpy) complex well layer sandwiched between triphenyldiamine derivative (TPD) layers were fabricated and their photoluminescent electroluminescent characteristics were also investigated. Sharp emission at 616 nm has been observed from the Eu complex in multilayer, single and multiple quantum-well structures. Details on the explanation of electrical properties of these structures will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.286-290
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• 1999

Electroluminescence is occurred when phosphor is located in electric field. In this paper, we made powder electroluminescent device (PELD) with structured ITO film/Phosphor/Insulator/Silver paste. The transparent electrode was ITO film and green(2704-01), orange(2702-02) and blue-green(2703-01) were used as phosphor. The insulator was BaTiO$_3$ and $Y_2$O$_3$, back electrode was silver paste. To investigate electrical and optical properties of PELDs, EL spectrum, Brightness, Transferred charge density using Sawyer-Tower\`s circuit was measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.582-585
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• 1999

Electroluminescence is occurred when phosphor is located in electric field. In this paper, we made powder electroluminescent device (PELD) with structured ITO film/Phosphor/Insulator/Silver paste. The transparent electrode was ITO film and green(2704-01) and orange(2702-02) and blue-preen(2703-01) were used as phosphor. The insulator was BaTiO$_3$ and $Y_2$O$_3$, bark electrode was silver paste. To investigate electrical and optical properties of PELDs, EL spectrum, Brightness . Transferred charge density using Sawyer-Towers circuit was measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.602-605
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• 1999

We dried emitting layer of EL device at 30, 80, I20 and $150^{\circ}C$ for Ihr to investigate the effects to the emission characteristics of devices. PL intensity of P3HT thin film decreased with increasing the drying temperature. But, the EL intensity and stability of device with emitting layer dried at $150^{\circ}C$ were the best. We think it s because of absence of water and remaining solvent in P3HT emitting layer. So, We suggest that the drying temperature of emitting layer of EL device should be select slightly low temperature than its glass transition temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.332-337
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• 2002

The applicability of models based on fractal geometry to characterize the surface of the EL devices was investigated. Insulating layer and phosphor layer of EL devices were deposited on ITO glass using e-beam method. The images of phosphor layer by scanning electron microscope(SEM) were transformed to binary coded data. The relations between fractal geometry and electrical characteristics of EL devices were investigated. When the fractal dimension of $Cas:EuF_3$ EL device was 1.82 and its grain boundary area was 19%, the brightness of $Cas:EuF_3$ EL device was 261 cd/$\textrm{m}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.349-353
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• 1999

In this paper, to fabricate the AC power electroluminescent device (PELD) with high brightness, new structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material were BaTiO3 and ZnS:Cu respectively. Fabricated AC power EL devices were estimated by optical and electrical properties of EL spectrum, brightness, CIE coordinate system, transferred charge density and EL emission wave in time domain. With above results, we found that brightness of newly proposed AC powder EL power EL device was 2754 cd/m2 at 100V, 400 Hz and compared with conventional device structure.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.752-758
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• 1995

Red emitting CaS:Eu,S electroluminescent(EL) device prepared at 550.deg. C by an electron-beam evaporation technique, demonstrated luminance of 175cd/m$\^$2/ and efficiency of 0.311m/W with 3kHz drive. Luminance was increased with the increase of applied voltage and frequency. From the results of the PL spectrum and the EL spectrum, the CaS:Eu, S device showed emission peak near 640nm resulted from the transition of EU$\^$2+/ 4f$\^$6/5d.rarw.4f$\^$7/. The capacitance of the phosphor layer from the Sawyer-Tower circuit was 10.5nF/cm$\^$2/.