• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1519-1521
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• 2007

In this work, a coplanar-type plasma flat fluorescent lamp having cross type of electrode was fabricated by screen printing and sealing technique. Cross type of electrode with a dielectric layer were screen-printed on a rear glass plate, and then fired at $550^{\circ}C$. Phosphor was printed on and fired at $450^{\circ}C$. Finally, the lamp was sealed by frit glass at $450^{\circ}C$. The lamp of cross electrode type was studied depending on the electrode gap and the thickness of dielectric layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1118-1123
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• 2008

High voltage multilayer ceramic capacitors (MLCCs) are classified into two classes-those for temperature compensation (class I) and high dielectric constant materials (class II). We manufactured high voltage MLCC with temperature coefficient characteristics of C0G and X7R and studied the characteristics of electric properties. Also we studied the characteristics of dielectric breakdown voltage (V) as the variation of thickness in the green sheet and how to pattern the internal electrodes. The dielectric breakdown by electric field was caused by defects in the dielectric materials and dielectric/electrode interface, so the dielectric thickness increased, the withstanding voltage per unit (E) thickness decreased. To overcome this problem, we selected the special design like as floating electrode and this design affected the increasing breakdown voltage(V) and realized the constant withstanding voltage per unit thickness(E). From these results, high voltage application of MLCCs can be expanded and the rated voltage can also be develop.

• Current Photovoltaic Research
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• v.10 no.1
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• pp.28-32
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• 2022

We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t₀)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t₀ = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R_□ = 7.24 Ω/□.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.962-965
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• 1999

We designed and fabricated a travelingwave CPW(coplanar waveguide) electrode for LiNbO$_3$ optical modulator. To Investigate the variation of microwave refractive index of these electrodes, we prepared the CPW electrode samples as a function of electrode thickness and measured the TDR and S-parameter. From this results, we could know the electrode conditions of index matching to 2.20 for 1550nm optical wave index for applying LiNbO$_3$ optical modulator and described. Also, we discussed the some properties of CPW electrode for applying LiNbO$_3$ optical modulator.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.3
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• pp.133-140
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• 2007

A 2-D model of fluid flow, mass transport and electrochemistry is analysed to examine the effect of current density at the current collector depending on active layer thickness of catlyst in polymer elecrolyte fuel cells. The finite element method is used to solve the continuity, potential and Maxwell-Stefan equations in the flow channel and gas diffusion electrode regions. For the material behavior of electrode reactions in the active catalyst layers, the agglomerate model is implemented to solve the diffusion-reaction problem. The calculated model results are described and compared with the different thickness of active catalyst layers. The significance of the results is discussed in the viewpoint of the current collecting capabilities as well as mass transportation phenomena, which is inferred that the mass transport of reactants dictates the efficiency of the electrode in the present analysis.

• Journal of the Korean Ceramic Society
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• v.37 no.6
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• pp.530-536
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• 2000

During the grain growth of the PZT thin films by selective nucleation method using PZT seed, it was found that the grain size was saturated with the annealing temperature. The saturation of grain size was analyzed by the interfacial energy which appeared during the crystallization. The factors affecting the saturation of grain size were found to be the interfacial energy between perovskite phase and pyrochlore phase, and PZT thin film and the bottom Pt electrode. When the ion damage was introduced to the grain-size saturated PZT thin films, further lateral growth was observed. Pt bottom electrode thickness was changed to control the interfacial energy between the PZT thin film and the Pt bottom electrode. When Pt thickness was increased, the grain size was also increased, because the lattice parameter of Pt films was increased with the thickness of the Pt films. The incubation time of nucleation was increased with the amount of the ion damage on the Pt films.

• Journal of the Korean Ceramic Society
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• v.30 no.1
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• pp.55-61
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• 1993

In the WSi2/CVD-Si/SiO2 polycide structure, electrode resistance and its property were studied as a function of deposition temperature and thickness of CVD-Si, diffusion condition of POCl3, and WSi2 being deposited or not. Resistivity of poly-Si is decreased with increment of thickness in the case of POCl3 diffusion of low sheet resistance, but it is increased in the case of high sheet resistance. The resistivity of amorphous-Si is generally lower than that of poly-Si. Initial sheet resistance of poly-Si/WSi2 gate electrode is affected by the thickness and resistance of poly-Si layer, but final resistance after anneal, 900$^{\circ}C$/30min/N2, is only determined by WSi2 layer. Flourine diffuses into SiO2, but tungsten does not. In spite of out-diffusion of phosphorus into WSi2 layer, the sheet resistance is not changed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.139-142
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• 1994

Ceramic filter using energy trapping pheonomenon is used bandpass filter at high frequency. In this paper, we analyzed theoretically ceramic filter characteristics of TS vibrational mode and also investigated experimentally it. The ceramic plate is PZT-4 poled in the thickness direction of Valpey Fisher Co. and electroded with two pairs. We analyzed the characteristics in appling to the all constant of ceramic and electrode material each other and vibrational mode. We also measured resonant frequency and bandpass width of the ceramic filter changing the thickness of ceramic plate and electrode spacing. Comparing of falter characteristics, theoretical value nearly corresponded with experimental value. So we saw that we can expect filter characteristics changing the thickness of ceramic plate and electrode spacing.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1998.11a
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• pp.9-11
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• 1998

A phenomenon of electroluminescent radiate as electric field applied in the phosphor, in this paper, we produced the Powder Electroluminescent Device(PELD) which was changing the structure and the thickness of phosphor and insulator for realization of the PELD with high brightness. We made PELD with structure that is WK-1(ITO film/Phosphor/Insulator/Electrode), WK-2(ITO film/Phosphor/Insulator/Electro de), WK-3(ITO film/Phosphor/Insulator/Electrode), WK-4(ITO film/Phosphor+Insulator/ Electrode). The property of the produced PELD are analyzed by measuring the spectrum which electrical and optical property, the brightness and the transferred charge density. In this result, the structure of WK-4 have good luminescence property than others, it's effective thickness is 60${\mu}{\textrm}{m}$. At 100V 400Hz, High brightness of 2700cd/m2 was performed.

• Journal of the Korea Safety Management & Science
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• v.1 no.1
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• pp.241-258
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• 1999

For hazardous air pollutants(HAP) such as NO and $NO_{2}$ decomposition efficiency, power consumption, and applied voltage were investigated by SPCP(surface induced discharge plasma chemical processing) reactor to obtain optimum process variables and maximum decomposition efficiencies. Decomposition efficiency of HAP with various electric frequencies(5~50 kHz), flow rates(100~1,000 mL/min), initial concentrations(100~1,000 ppm), electrode materials(W, Cu, Al), electrode thickness(1, 2, 3 mm) and number of electrode windings(7, 9, 11) were measured. Experimental results showed that for the frequency of 10 kHz, the highest decomposition efficiency of 94.3 % for NO and 84.7 % for $NO_{2}$ were observed at the power consumptions of 19.8 and 20W respectively and that decomposition efficiency decreased with increasing frequency above 20 kHz. Decomposition efficiency was increased with increasing residence times and with decreasing initial concentration of pollutants. Decomposition efficiency was increased with increasing thickness of discharge electrode and the highest decomposition efficiency was obtained for the electrode diameter of 3 mm in this experiment. As the electrode material, decomposition efficiency was in order : tungsten(W), copper(Cu), aluminum(Al).