• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.165-166
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• 2007

In these days $SF_6$ mixtures and alternative gas have been studied because of global warming and liquefying at low temperature and high pressure. At present work the breakdown characteristics of $SF_6/CF_4$ mixture in non-uniform field was performed. The experiments were carried out under positive and negative standard lightning impulse (SLT) voltages. The point-plane electrode was used with 3 mm gap distance in the test chamber. The $SF_6/CF_4$ mixture which contain 20% of $SF_6$ was compared with pure $SF_6$ and $CF_4$ gas. Experimental gas pressure ranged from 0.1 to 0.4 MPa. The breakdown voltage under negative SLI is higher than the breakdown voltage under positive voltage. And the breakdown voltage of $SF_6$ 20%, $CF_4$ 80% mixture is similar to that of pure $SF_6$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.227-228
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• 2007

Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of SFJCF4 mixtures in uniform field was performed. The experiments were carried out under AC and standard lightning impulse (SLI) voltages. The sphere-sphere electrode whose gap distance was 1 mm was used in a test chamber. $SF_6/CF_4$ mixtures contained from 0 to 100% $SF_6$ and the experimental gas pressure ranged from 0.1 to 0.4 MPa. The results show that addition of $SF_6$ to $CF_4$ increase AC and SLI breakdown voltages. Under AC voltages the breakdown voltages of each mixture were linearly increased according to the quantity of $SF_6$. However under SLI voltages the breakdown voltages of each mixture were similar.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.56-61
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• 1999

Highly conductive oxide films of BaRuO$_3$ have been grown heteroepitaxially on (100) LaAlO$_3$ single crystalline substrates by using pulsed laser deposition. The films are c-axis oriented with an in-plane epitaxial relationship of <010><100>BaRuO$_3$ // <110>LaAlO$_3$. Atomic force microscopy (AFM) observation shows that they consist of a fine-arranged network of grains and have a mosaic microstructure. Generally temperature-dependent resistivity shows the transition from metallic curve to semiconductor-metallic twofold curve by the deposition conditions for Ru oxide based materials like SrRuO$_3$, CaRuO$_3$, BaRuO$_3$, etc.. This twofold curve comes from the structural similarity of Ru oxide based materials including BaRuO$_3$. We find that the distance of Ru-Ru bonding in the unit cell of BaRuO$_3$ as well as the grain boundary scattering could be the two important causes of these interesting conductive properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.431-432
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• 2007

In this study, we used screen printing on the rear glass with silver electrodes, phosphor and a dielectric which is on the silver electrodes, and carried out firing in the temperature of $550^{\circ}C$, $570^{\circ}C$, $450^{\circ}C$ each. To seal the rear and top glass together, we used crystalline frit paste as a sealing material with dispenser and carried out firing up to $450^{\circ}C$. As using this panel, we focused on optimizing the condition which influences characteristics of discharging by the distance between electrodes, electrode structure, type and pressure of gases for FFL.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• 한국광학회지
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• 제3권3호
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• pp.178-182
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• 1992

내경 1.6cm, 길이 50cm의 알루미나 세라믹 방전관을 사용하여 방전전극간의 거리가 45cm인 공쟁식 방전가열형 구리증기레이저를 제작하였다. 방전가열 및 여기를 위한 6kV, 500mA 정격의 직류 고전압 전원장치, 1.8H의 중전 인덕터와 5nF의 에너지저장 캐패시터를 포함하는 resonant charging 방식의 고전압 충전회로와 1-7kHz 범위의 펄스반복률로 동작하는 thyratron 구동회로가 각각 설계 제작되었다. 개발된 레이저장치는 방전관의 온도 $1350^{\circ}C$ 부근에서 발진을 시작하였고, 충전전압 12kV, 펄스반복률 4.5kHz, 네온완충기체압력 50mbar, 동작온도 $1460^{\circ}C$일 때 0.7W의 최대평균 출력을 얻었다.

• Current Optics and Photonics
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• 제2권2호
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• pp.153-164
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• 2018

In semiconductor manufacturing, critical dimensions indicate the features of patterns formed by the semiconductor process. The purpose of measuring critical dimensions is to confirm whether patterns are made as intended. The deposition process for an organic light emitting diode (OLED) forms a luminous organic layer on the thin-film transistor electrode. The position of this organic layer greatly affects the luminescent performance of an OLED. Thus, a system for measuring the position of the organic layer from outside of the vacuum chamber in real-time is desired for monitoring the deposition process. Typically, imaging from large stand-off distances results in low spatial resolution because of diffraction blur, and it is difficult to attain an adequate industrial-level measurement. The proposed method offers a new superresolution single-image using a conversion formula between two different optical systems obtained by a deep learning technique. This formula converts an image measured at long distance and with low-resolution optics into one image as if it were measured with high-resolution optics. The performance of this method is evaluated with various samples in terms of spatial resolution and measurement performance.

• Current Photovoltaic Research
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• 제11권1호
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• pp.34-37
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• 2023

Solar energy had become the main energy industry of renewable energy along with hydroelectric power generation. One of the technologies that contributed to the popularization of photovoltaic power and the decrease in the unit price of photovoltaic modules was the large-area solar cell. However, as the area increased, the light receiving area increased and the current value increased accordingly. Since power loss occurs when the current value was large, the number of busbar was increased to increase the current collection rate, and a technology to lower the current value through half-cutting was developed. The bus bar of the solar cell served as a passage through which the generated current was transmitted. This was because when the number of busbar decreases, the moving distance of electrons increased, so the amount of power generation decreases and when it increases, shadows occured. An important aspect of the electrode design was the optimal balance of these busbars and number of fingers. Therefore, in this study, the characteristics of the solar cell according to the number of front bus bars of the large-area solar cell were simulated using Griddler 2,5 pro. After selecting the number of busbar with the best characteristics, the difference was compared by varying the number of fingers and a better direction for the number of cutting was presented.

• 공업화학
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• 제18권5호
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• pp.522-526
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• 2007

산화처리 탄소로부터 상분해시킨 코크스의 구조 및 전기화학적 특성을 조사하였고, KOH 활성화 코크스와 비교하였다. $NaCLO_3$/니들 코크스의 비율이 7.5 이상의 조건에서 산화처리를 행한 graphene 층간 구조를 가진 니들 코크스($d_{002}=3.5{\AA} $)는 산화흑연 구조로 상변화가 일어나고, 이 때 산소함량의 증가와 함께 층간 간격은 $6.9{\AA} $으로 증가하였다. 산화처리 탄소를 $200^{\circ}C$에서 열처리 건조를 하면 상분해가 일어나서 다시 graphene 층간 구조로 복원하고, 층간 간격은 $3.6{\AA} $으로 감소하였다. 그러나, KOH 활성화 과정에서 니들 코크스의 층간 변화는 관찰되지 않았다. 한편, 1차 충전에서 전해질 이온들에 의한 상분해 코크스에의 침입은 1.0 V에서 일어나고, 이는 KOH 활성 코크스보다 작은 수치이다. 상분해 코크스를 이용한 커패시터 셀은 1 kHz에서 $0.57{\Omega}$의 내부저항을 나타내고, 2 전극 시스템에서 0~2.5 V 범위 내에서 측정한 상분해 코크그의 중량 또는 전극 부피 당 용량은 각각 30.3 F/g과 26.9 F/mL을 나타내었고, 이들 특성은 KOH 활성 코크스보다 우수하였다. 상분해 코크스의 우수한 전기화학적 특성은 산화처리-상분해 과정에서의 층간 팽창-수축에 따른 층간 결함과 관련 있는 것으로 판단된다.

• 한국인터넷방송통신학회논문지
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• 제19권6호
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• pp.65-71
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• 2019

기존의 대지저항률과 접지저항 현장 측정 방식은 일정한 간격의 측정전극을 설치하여 전류를 인가하여 대지의 저항값에 따른 전압강하를 측정하게 되는데 현장 대지의 층상 구조가 특이성을 갖게 되면 역산 시 경계 조건의 오차를 발생하게 되고 접지 설계 시 중요한 대지저항률 분석이 시뮬레이션 상과 많은 차이를 보이게 된다. 본 연구는 정보통신 융합환경에서 아두이노 모듈과 스마트 접지 측정 기술를 활용하여 대지의 층상이 특이성을 갖는 구조라도 신뢰할 수 있는 스마트 대지 저항 측정장치를 개발하여 대지저항을 분석하고 데이터를 축적하여 대지의 경년변화를 예측한다. 현장의 지형적인 특성을 고려하여 접지저항과 대지저항 측정 시 각도와 거리를 정확하게 위치시켜 보조전극을 설치할 수 있는 접지저항 측정장치 및 측정방법을 제안한다. 정확한 접지저항 값을 선정할 수 있게 하기 위해 설치된 전극을 통해 접지저항 값뿐만 아니라, 대지저항률을 취득할 수 있어 유사지역에 전기시설물 설치 시에 유용한 자료로 활용할 수 있다. 또한 신뢰성 높은 데이터를 활용하고 현장의 대지구조를 분석하여 공사비용 뿐 아니라 접지설계에서 중요한 비중을 차지하는 대지에 대한 정밀한 분석으로 전위상승 등의 접지설비설계에서 많은 활용이 기대된다.