• 한국식품영양학회지
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• 제28권1호
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• pp.126-133
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• 2015

Ohmic heating uses electric resistance heat which occurs equally and rapidly inside food when the electrical current is transmitted into. Prior to the study, we have researched the potato starch's thermal property changes during ohmic heating. Comparing with conventional heating, the gelatinization temperature and the range of potato starch treated by ohmic heating are increased and narrowed respectively. This result is appeared equally at wheat, corn and sweet potato starch. At this study, we treated potato, wheat, corn and sweet potato starch by ohmic/conventional method and observed change of external structure by microscope and internal structure by X-ray diffractometer. Conventional heated at $55^{\circ}C$ potato starch was not external structural changes. But ohmic heated potato starch is showed largely change. Some small size starch particle were broken or small particles are made of larger particle together or small particles caught up in the large particle. Changes in ohmic heated potato starch at $60^{\circ}C$ was greater. The inner matter came to an external particle burst inside and only the husk has been observed. The same change was observed in the rest of the starch. The change of internal structure of potato starch was measured using X-ray diffraction patterns. There was no significant difference between ohmic and conventional heating at $55^{\circ}C$. But almost every peak has disappeared ohmic at $60^{\circ}C$. Especially $5.4^{\circ}$ peak to represent the type B was completely gone. When viewed from the above results, external changes with change in the internal crystal structure of the starch particles were largely unknown to appear. In conclusion, during ohmic heating changes of starch due to the electric field with a change in temperature by the heating was found to have progressed at the same time.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권6호
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• pp.297-301
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• 2006

In the present work, we investigate the characteristics of new composition material, chalcogenide $Ge_1Se_1Te_2$ material in order to overcome the problems of conventional PRAM devices. The Tc of $Ge_1Se_1Te_2$ bulk was measured $231.503^{\circ}C$ with DSC analysis. For static DC test mode, at low voltage, two different resistances are observed. depending on the crystalline state of the phase-change resistor. In the first sweep, the as-deposited amorphous $Ge_1Se_1Te_2$ showed very high resistance. However when it reached the threshold voltage(about 11.8 V), the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The phase transition between the low conductive amorphous state and the high conductive crystal]me state was caused by the set and reset pulses respectively which fed through electrical signal. Set pulse has 4.3 V. 200 ns. then sample resistance is $80\sim100{\Omega}$. Reset pulse has 8.6 V 80 ns, then the sample resistance is $50{\sim}100K{\Omega}$. For such high resistance ratio of $R_{reset}/R_{set}$, we can expect high sensing margin reading the recorded data. We have confirmed that phase change properties of $Ge_1Se_1Te_2$ materials are closely related with the structure through the experiment of self-heating layers.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.114.2-114.2
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• 2017

Transparent film heaters (TFHs) based on Joule heating are currently an active research area. However, TFHs based on an indium tin oxide (ITO) monolayer have a number of problems. For example, heating is concentrated in part of the device. Also, heating efficiency is low because it has high sheet resistance ($R_S$). Resistance of indium zinc oxide (IZO) is similar to ITO and it can be used to flexible applications due to its amorphous structure. To solve these problems, our study introduced hybrid layers of IZO/Ag/IZO deposited by magnetron sputtering, and the electrical, optical, and thermal properties were estimated for various thickness of the metal interlayer. It was found that the sheet resistance of the multilayer was mainly dependent on the thickness of the Ag layers. The $R_S$ of IZO(40)/Ag/IZO(40nm) multilayer was 5.33, 3.29, $2.15{\Omega}/{\Box}$ for Ag thickness of 10, 15, and 20nm, respectively, while the $R_S$ of an IZO monolayer(95nm) was $59.58{\Omega}/{\Box}$. The optical transmittance at 550nm for the IZO(95nm) monolayer is 81.6%, and for the IZO(40)/Ag/IZO(40nm) multilayers with Ag thickness 10, 15 and 20nm, is for 72.8, 78.6, and 63.9%, respectively. The defrost test showed that the film with the lowest RS had the highest heat generation rate (HGR) for the same applied voltage. The results indicated that IZO(40)/Ag(15)/IZO(40nm) multilayer has the best suitable property, which is a promising thin film heater for the application in vehicle windshield.

• 공업화학
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• 제28권1호
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• pp.80-86
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• 2017

본 연구에서는 흑연섬유(GF)의 전기적 특성을 변화시키기 위하여 질소관능기 도입을 실시하였고, 처리조건에 따라 흑연섬유의 발열성능을 평가하였다. 흑연섬유는 $200^{\circ}C$에서 2 h 동안 열-고상반응법으로 처리되었다. 질소도핑 된 흑연섬유의 표면특성은 XPS로 조사되었으며, 저항 및 발열온도는 전위계 시스템과 열화상카메라를 이용하여 측정하였다. XPS 결과 우레아 함량이 증가함에 따라 흑연섬유 표면의 질소관능기가 증가하였으며, 이 질소관능기가 도입됨에 따라서 흑연섬유의 발열특성이 또한 향상되었다. 우레아 처리된 흑연섬유의 최대 발열온도는 60 V에서 $53.8^{\circ}C$로 나타났으며, 이는 미처리 흑연섬유와 비교하여 발열특성이 약 55% 향상됨을 알 수 있었다. 이러한 효과는 열고상반응법에 의해서 흑연섬유 표면에 도입된 질소관능기 때문에 기인한 것으로, 이는 흑연섬유의 열적 특성에 상당히 영향을 주었다.

• Journal of Electrical Engineering and Technology
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• 제6권4호
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• pp.543-550
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• 2011

Conductive SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol%) mixture of zirconium diboride (ZrB2) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering (SPS). Sintering was carried out for 5 min in an argon atmosphere at a uniaxial pressure and temperature of 50 MPa and $1500^{\circ}C$, respectively. The composite sintered at a heating speed of $25^{\circ}C$/min and an on/off pulse sequence of 12:2 was denoted as SZ12L. Composites SZ12H, SZ48H, and SZ10H were obtained by sintering at a heating speed of $100^{\circ}C$/min and at on/off pulse sequences of 12:2, 48:8, and 10:9, respectively. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined and thermal image analysis of the composites was performed. The apparent porosities of SZ12L, SZ12H, SZ48H, and SZ10H were 13.35%, 0.60%, 12.28%, and 9.75%, respectively. At room temperature, SZ12L had the lowest flexural strength (286.90 MPa), whereas SZ12H had the highest flexural strength (1011.34 MPa). Between room temperature and $500^{\circ}C$, the SiC-$ZrB_2$ composites had a positive temperature coefficient of resistance (PTCR) and linear V-I characteristics. SZ12H had the lowest PTCR and highest electrical resistivity among all the composites. The optimum SPS conditions for the production of energy-friendly SiC-$ZrB_2$ composites are as follows: 1) an argon atmosphere, 2) a constant pressure of 50 MPa throughout the sintering process, 3) an on/off pulse sequence of 12:2 (pulse duration: 2.78 ms), and 4) a final sintering temperature of $1500^{\circ}C$ at a speed of $100^{\circ}C$/min and sintering for 5 min at $1500^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제30권10호
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• pp.609-614
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• 2017

The proposed stretchable transparent electrodes based on silver nanowires (AgNWs) were prepared on a polyurethane (PU) substrate. In order toavoid the surface roughness caused by the silver nanowires, a titanium oxide ($TiO_2$) buffer layer was addedby coating and heating the organometallic sol-gel solution. The fabricated stretchable electrodes showedan electrical sheet resistance of $24{\Omega}sq^{-1}$, 78% transmittance at 550 nm, and an average surface roughness below 5 nm. Furthermore, the AgNW-based electrode maintained its initial electrical resistance under 130% strain testing conditions, without the assistance of additional conductive polymer layers. In this paper, the critical role of the $TiO_2$ buffer layer between the AgNW network and the PU substrate has been discussed.

• 전기학회논문지
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• 제68권1호
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• pp.69-76
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• 2019

Microheaters with different structures were fabricated and compared to find an optimal configuration enhancing the performances of $C_2H_2$ gas sensor. Three temperature sensors were integrated on the surface of the insulation layer over the microheater, and resistance changes were observed to check the generated heat from the microheater. A low operating voltage of 1mV was applied to the temperature sensor to minimize any influence of thermal heat from the resistance type temperature sensor, whereas high voltages in the range between 10 and 20V were applied to the microheater. A microheater structure generating maximum heat at low voltage was determined. The generated heat was verified by the temperature sensors on the top of the $Si_3N_4$ and infrared camera. A long term stability and accuracy of the microheater were observed. The developed microheater was applied to enhance the performances of $C_2H_2$ gas sensor and successfully confirmed that the developed microheater greatly contributes to the improvement of sensitivity and selectivity of gas sensor.

• 마이크로전자및패키징학회지
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• 제30권1호
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• pp.90-94
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• 2023

금속 발열체는 높은 열손실과 화재 위험성 등의 문제점이 있어 우수한 열전도도와 전기전도도 특성을 갖는 탄소섬유가 대체소재로 각광받고 있다. 그러나 탄소섬유는 약 200℃ 이상에서 산화하여 단선되기 때문에 발열체 적용이 제한적이며, 현재 진공관 형태로 탄소섬유 발열체가 일부 사용되고 있다. 본 연구에서는 진공관을 사용하지 않고 대기 중탄소섬유 산화방지를 위해 전기영동증착법으로 탄소섬유 표면에 내열성이 높은 폴리이미드를 코팅하였으며 인가전압에 따른 코팅 두께와 내열성을 확인하였다. 폴리이미드를 코팅한 탄소섬유 발열체를 직렬 연결하여 만든 히터는 최대 292℃ 까지 안정적인 발열 특성을 보였으며 이는 열전달 시뮬레이션의 발열온도 결과와 유사하였다. 전기영동증착방법으로 코팅한 폴리이미드 층은 200℃ 이상에서 탄소섬유의 산화방지에 효과적이며 발열 안정성을 요구하는 2차전지, 우주항공, 전기자동차 등 다양한 발열 부품에 적용 가능할 것으로 기대된다.

• 한국건축시공학회지
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• 제13권6호
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• pp.513-521
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• 2013

This study aimed to examine whether heat curing methods of concrete subjected to $-10^{\circ}C$ could be effective by varying the combination of heating cable and surface heat insulations. Three different concrete specimens incorporating 30% fly ash with 50% W/B were fabricated to simulate wall, column and slab members with dimensions of $1600{\times}800{\times}200$ mm for slab, $800{\times}600{\times}200$ mm for wall and $800{\times}800{\times}800$ mm for column. For heat curing combinations, Type-1 specimens applied PE film for slab, plywood for wall and column curing. Type-2 specimens applied double layer bubble sheet (2LB) and heating coil for slab, and 50 mm styrofoam for wall and column curing. Type-3 specimen applied 2LB for slab, electrical heating mat for wall and column inside heating enclosure. The test results revealed that the temperature of Type 1 specimen dropped below $0^{\circ}C$ beginning at 48 hours after placement due to its poor heat insulating capability. Type 2 and 3 specimens maintained a temperature of around $5{\sim}10^{\circ}C$ after placement due to favorable heat insulating and thermal resistance.

• 한국표면공학회지
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• 제47권5호
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.