• 제목/요약/키워드: electrical line contact

검색결과 195건 처리시간 0.028초

팬터그래프와 전차선간 최소 이선아크 지속시간에 따른 이선율 변화량 분석 (Analysis of Percentage of Arcing between Pantograph and Overhead Contact Line as a Function of Duration of Arc)

  • 박영;이기원;권삼영;박철민;김재광;최원석
    • 전기학회논문지
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    • 제63권6호
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    • pp.855-859
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    • 2014
  • Quality criteria for interaction between a pantograph and overhead contact wire is a most important requirement to assess of the performance for the current collection system. Interaction performance between pantograph and catenary system is subject to approval by the infrastructure manager when a new design and contraction of overhead contact line and pantograph are installed. Among the various performance, percentage of arcing at maximum line speed is a simple test method compared with contact force of pantograph due to direct sensing of pantagraph, calibrations, installations of train, and etc. On the other hand, percentage of arcing is need to reliable arcing detector and general requirements with accordance with EN 50317. In this paper, percentage of arcing are investigated on the function of duration of arc and proposed which is satiable of percentage of arcing. As a results, we proposed which duration of arcs are unsuitable from infrastructures point of view as performance testing for quality of current collection.

Development of a Live-line Insulator Inspection Tool System for 154 kV Power Transmission Lines

  • Lee, Jae-Kyung;Park, Joon-Young;Cho, Byung-Hak;Oh, Ki-Yong
    • Journal of Electrical Engineering and Technology
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    • 제7권1호
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    • pp.23-33
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    • 2012
  • The current paper deals with a new live-line insulator inspection tool system that will be used by the Korea Electric Power Corporation for its 154 kV power transmission lines in 2011. Unlike the existing contact type tools, the developed inspection tool automates parts of the insulator inspection process using a sensor and an actuator. The tool sustains its weight independently, not by a lineman. In addition, the inspection tool measures the insulation resistance of an insulator together with its distribution voltage, thus providing more information for analysis and diagnosis. Such characteristics improve the system's operation efficiency, measurement reliability, and usability. We confirmed its effectiveness through live-line field tests with actual power transmission lines.

조가선 전류 검측 시스템의 활용기술 연구 - 고속선 경부2단계 시험결과를 중심으로 - (Utilizing Technology in Measurement System for Catenary Current: - Focusing on Testing Results for Kyoungbu High-speed Line in Korea -)

  • 박영;정호성;이기원
    • 전기학회논문지
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    • 제62권10호
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    • pp.1465-1469
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    • 2013
  • The resent developed high speed train called HEMU-430X (Highspeed Electric Multiple Unit - 430km/h eXperiment) recorded a 421.4 km/h in Kyoungbu high speed line in Korea. A verity of measurement systems are used to check the performance between pantograph and catenary system. An innovative measurement system is adopted to check the current of catenary wire in the track side during HEMU-430X test running. This paper presents the measurement results of catenary current in kyoungbu high-speed line and describe its utilizing technology in the experimental results of catenary current. In order to analyze field testing results, the current ratio between contact and catenary current have been analyzed by means of Carson-Pollaczek equation. And the current wave forms between catenary and contact wire are presented based on the simulation results.

Pt/Si/Ti P형 4H-SiC 오옴성 접합에서 낮은 접촉 저항에 관한 연구 (Low resistivity ohmic Pt/Si/Ti contacts to p-type 4H-SiC)

  • 양성준;이주헌;노일호;김창교;조남인;정경화;김은동;김남균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.521-524
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    • 2001
  • In this letter. we report on the investigation of Ti. Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $500^{\circ}C$ for 1h. $950^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method. which resulted in specific contact resistivities in the $3.5{\times}10^{-3}$ and $6.2{\times}10^{-4}ohm/cm^{2}$, and the physical properties of the contacts were examined using x-ray diffraction. microscopy. AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si. migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

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Pt/Si/Ti P형 4H-SiC 오옴성 접합에서 낮은 접촉 저항에 관한 연구 (Low resistivity ohmic Pt/Si/Ti contacts to p-type 4H-SiC)

  • 양성준;이주헌;노일호;김창교;조남인;정경화;김은동;김남균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.521-524
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    • 2001
  • In this letter, we report on the investigation of Ti, Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at 500$^{\circ}C$ for 1h, 950$^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific contact resistivities in the 3.5x10$\^$-3/ and 6.2x10$\^$-4/ ohm/$\textrm{cm}^2$, and the physical properties of the contacts were examined using x-ray diffraction, microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

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III-V 광소자 제작을 위한 ITO/n+lnP 옴 접촉 특성연구 (Formation of ITO Ohmic Contact to ITO/n+lnP for III-V Optoelectronic Devices)

  • 황용한;한교용
    • 한국전기전자재료학회논문지
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    • 제15권5호
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    • pp.449-454
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    • 2002
  • The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.

고주파에서 높은 신호 격리도를 갖는 접촉식 RF MEMS 스위치의 설계 (Design of Ohmic Contact RF MEMS Silicon Switch with High Isolation at High Frequencies)

  • 이용석;장윤호;김정무;김용권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1509_1510
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    • 2009
  • This paper presents the design and simulation results of ohmic contact RF MEMS silicon switch with a high isolation at high frequencies along with the position of a contact part, initial off-state and intermediate off-state including the state where a contact part is placed right over a signal line of coplanar waveguide (CPW). The ohmic contact part is connected with comb drives made of high resistivity single crystalline silicon. The released contact part is $30{\mu}m$ apart from the edge of signal line on the glass substrate along the lateral direction (x-direction) at initial off-state. The electrostatic force of the comb electrode creates the x-directional movement thus initial state is converted to the intermediate off-state. The initial off-state of the switch results in isolations of -31 dB, -24 dB and reflections of -0.45 dB, -0.67 dB at 50 GHz and 110 GHz, respectively. It shows the isolation degradation when the contact part moves right over the signal line of CPW like an initial off-state of a conventional MEMS switch. The isolations and reflections are -31 dB, -24 dB and -0.50 dB, -1.31 dB at 50 GHz and 110 GHz, respectively at the intermediate off-state.

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비정질 산화물 SiZnSnO 반도체 박막의 전기적 특성 분석 (Investigation on Electrical Property of Amorphous Oxide SiZnSnO Semiconducting Thin Films)

  • 변재민;이상렬
    • 한국전기전자재료학회논문지
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    • 제32권4호
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    • pp.272-275
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    • 2019
  • We investigated the electrical characteristics of amorphous silicon-zinc-tin-oxide (a-SZTO) thin films deposited by RF-magnetron sputtering at room temperature depending on the deposition time. We fabricated a thin film transistor (TFT) with a bottom gate structure and various channel thicknesses. With increasing channel thickness, the threshold voltage shifted negatively from -0.44 V to -2.18 V, the on current ($I_{on}$) and field effect mobility (${\mu}_{FE}$) increased because of increasing carrier concentration. The a-SZTO film was fabricated and analyzed in terms of the contact resistance and channel resistance. In this study, the transmission line method (TLM) was adopted and investigated. With increasing channel thickness, the contact resistance and sheet resistance both decreased.

전차선의 집전상태 판단 알고리즘 구현 (On the Implementation of an Advanced Judgement Algorithm for Contact Loss of Catenary System)

  • 박영;정호성;윤일권;김원하
    • 전기학회논문지
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    • 제63권6호
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    • pp.850-854
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    • 2014
  • Analyzing dynamic performance between pantograph and contact wire depends on mechanical and electrical conditions such as contact force, currents, aerodynamics of pantograph and tension of overhead contact wire. For the characteristic of dynamic performance between pantograph and overhead contact wire, various evaluation systems are used to measuring of the interaction of the contact line and the pantograph. Among the various methods, the contact force and percentage of arcing are intended to prove the safety and the quality of the current collection system on the train. However, these methods are only capable of measuring on the train which are installed measurement systems. Therefore in this paper, a track-side monitoring system was implemented to measure electrical characteristics from active overhead contact wire systems in order to constantly estimate current collection performance of railway operation. In addition, a method to analyze loss of contact phenomena was proposed. According to simulation results, the proposed system was capable of measuring abnormal electrical behavior of pantograph and contact wires on the track-side. The advantage of the proposed system is possible to detect loss of contact or any other electrical abnormalities of all types of trains within sections from sub to sub without the need to install any on-board equipment on trains.

TiW 박막을 이용한 극한 환경 MEMS용 3C-SiC의 Ohmic contact 형성 (Ohmic Contact Formation of SiC for Harsh Environment MEMS Using a TiW Thin-film)

  • 정수용;노상수;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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    • pp.133-136
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    • 2004
  • In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.

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