• Proceedings of the KIEE Conference
• /
• 1993.07b
• /
• pp.788-790
• /
• 1993

In the train position defection for the rail car, which is not able to obtain the short circuit between the track circuit and the wheel, the methods by the inductive radio of non-contact type are applicated. It is represented the principles and the methods of the inductive radio train detection on MLU, Transrapid, HSST, M-Bahn, and People Mover for MAGLEV, on Kobe system for the rubber-tired vehicle, and on ICE for wheel-on-rail.

• Journal of the Korean Society of Safety
• /
• v.32 no.5
• /
• pp.13-19
• /
• 2017

In this paper, study of vehicle fire cases caused by connector and power wiring of anti-lock brake system(ABS) module damage is presented. The purpose of ABS module is to improve braking and steering ability under sudden stop of the vehicle by repeatedly activating and releasing the brake with electric signal via electric control unit. The electric control unit for ABS may experience incomplete contact between power line and signal line or electrical breakdown on the printed circuit board by undergoing repetitive signal change which would consequently result in electrical heat and spark, eventually leading to automotive fire. Therefore, the purpose of this paper is to provide fundamental data by analyzing connector and power wiring of ABS module damage conducive to the precise investigation on the cause of vehicle fire.

• Journal of the Microelectronics and Packaging Society
• /
• v.10 no.4
• /
• pp.29-33
• /
• 2003

Material and electrical properties of copper-based ohmic contacts on n-type 4H-SiC were investigated for the effects of the post-annealing and the metal covering conditions. The ohmic contacts were prepared by sequential sputtering of Cu and Si layers on SiC substrate. The post-annealing treatment was performed using RTP (rapid thermal process) in vacuum and reduction ambient. The specific contact resistivity ($p_{c}$), sheet resistance ($R_{s}$), contact resistance ($R_{c}$), transfer length ($L_{T}$), were calculated from resistance (RT) versus contact spacing (d) measurements obtained from TLM (transmission line method) structure. The best result of the specific contact resistivity was obtained for the sample annealed in the reduction ambient as $p_{c}= 1.0 \times 10^{-6}\Omega \textrm{cm}^2$. The material properties of the copper contacts were also examined by using XRD. The results showed that copper silicide was formed on SiC as a result of intermixing Cu and Si layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.543-543
• /
• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.11
• /
• pp.841-845
• /
• 2013

We give a textured front on silicon wafer for high-efficiency solar cells by using micro contact printing method which uses PDMS (polydimethylsiloxane) silicon rubber as a stamp and SAM (self assembled monolayer)s as an ink. A random pyramidal texturing have been widely used for a front-surface texturing in low cost manufacturing line although the cell with random pyramids on front surface shows relatively low efficiency than the cell with inverted pyramids patterned by normal optical lithography. In the past two decades, the micro contact printing has been intensively studied in nano technology field for high resolution patterns on silicon wafer. However, this promising printing technique has surprisingly never applied so far to silicon based solar cell industry despite their simplicity of process and attractive aspects in terms of cost competitiveness. We employ a MHA (16-mercaptohexadecanoic acid) as an ink for Au deposited $SiO_2/Si$ substrate. The $SiO_2$ pattern which is same as the pattern printed by SAM ink on Au surface and later acts as a hard resist for anisotropic silicon etching was made by HF solution, and then inverted pyramidal pattern is formed after anisotropic wet etching. We compare three textured surface with different morphology (random texture, random pyramids and inverted pyramids) and then different geometry of inverted pyramid arrays in terms of reflectivity.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.59 no.3
• /
• pp.636-644
• /
• 2010

A method for the detection of on-road succeeding vehicles using visual characteristic features like horizontal edges, shadow, symmetry and intensity is proposed. The proposed method uses the prominent horizontal edges along with the shadow under the vehicle to generate an initial estimate of the vehicle-road surface contact. Fast symmetry detection, utilizing the edge pixels, is then performed to detect the presence of vertically symmetric object, possibly vehicle, in the region above the initially estimated vehicle-road surface contact. A window defined by the horizontal and the vertical line obtained from above along with local perspective information provides a narrow region for the final search of the vehicle. A bounding box around the vehicle is extracted from the horizontal edges, symmetry histogram and a proposed squared difference of intensity measure. Experiments have been performed on natural traffic scenes obtained from a camera mounted on the side view mirror of a host vehicle demonstrate good and reliable performance of the proposed method.

• Journal of IKEEE
• /
• v.22 no.2
• /
• pp.484-487
• /
• 2018

5 MeV proton-irradiation with total dose of $10^{15}/cm^2$ was performed on AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with various gate metals including Ni, TaN, W, and TiN to investigate the degradation characteristics. The positive shift of pinch-off voltage and the reduction of on-current were observed from irradiated HEMTs regardless of a type of gate materials. Hall and transmission line measurements revealed the reduction of carrier mobility and sheet charge concentration due to displacement damage by proton irradiation. The shift of pinch-off voltage was dependent on Schottky barrier heights of gate metals. Gate leakage and capacitance-voltage characteristics did not show any significant degradation demonstrating the superior radiation hardness of Schottky gate contacts on GaN.

• Electrical & Electronic Materials
• /
• v.7 no.3
• /
• pp.243-251
• /
• 1994

ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.

• Journal of the Korean Society for Railway
• /
• v.15 no.5
• /
• pp.447-453
• /
• 2012

It is studied that the structure of the contact plane geometry of the contact wire would be changed when the contact wire tension is increased in the existing overhead contact lines for the purpose of improving the operation speed temporarily. In this paper, the dropper length formula which could be well applied to the pre-sagged catenary is reviewed first. Second, the changing amount of the pre-sag if the contact wire tension change from 20kN to 23kN or from 20kN to 25kN for the Gyeongbu HSL(high speed line) 49.5m catenary is evaluated by using of the self-written program in accordance with the dropper length formula. Moreover, the increasing tension and measuring the pre-sag change experiment in the Gyeongbu 2 HSL was conducted. The calculated data are compared with the measured data. As a result, it is found that the geometry change is very little and will not make the current collection performance deteriorated.

• Proceedings of the KIEE Conference
• /
• 1997.07b
• /
• pp.406-408
• /
• 1997

This paper presents the new method of a nondestructive spot welding state inspection system using neural networks. The learning process of neural networks makes the inspection system to adapt the variable welding parameters. The inspecting process is working with on-line real-time after off-line learning process. This neural network based inspection system shows reliable results through the field test for variations of applied voltages, currents, and contact area of the welding electrode.