• Title/Summary/Keyword: electrical Q-value

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Low-temperature sintering and microwave dielectric properties of $ZnAl_2O_4$ with ZnO-$B_2O_3-SiO_2$ glass (ZnO-$B_2O_3-SiO_2$ 유리가 첨가된 $ZnAl_2O_4$의 저온 소결 및 마이크로파 유전 특성)

  • Kim, Kwan-Soo;Yoon, Sang-Ok;Kim, Shin;Kim, Yun-Han;Lee, Joo-Sik;Kim, Kyung-Mi
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.265-265
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    • 2007
  • In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

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Effect of freezing on electrical properties and quality of thawed chicken breast meat

  • Wei, Ran;Wang, Peng;Han, Minyi;Chen, Tianhao;Xu, Xinglian;Zhou, Guanghong
    • Asian-Australasian Journal of Animal Sciences
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    • v.30 no.4
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    • pp.569-575
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    • 2017
  • Objective: The objective of this research was to study the electrical properties and quality of frozen-thawed chicken breast meat and to investigate the relationship between these parameters at different times of frozen storage. Methods: Thawed samples of chicken breast muscles were evaluated after being kept in frozen storage at $-18^{\circ}C$ for different periods of time (1, 2, 3, 4, 5, 6, 7, and 8 months). Results: The results showed that water-holding capacity (WHC) and protein solubility decreased while thiobarbituric acid-reactive substances content increased with increasing storage time. The impedance module of samples decreased during 8-month frozen storage. Pearson correlation coefficients showed that the impedance change ratio (Q value) was significantly (p<0.05) related to pH, color, WHC, lipid oxidation and protein solubility, indicating a good relationship between the electrical properties and qualities of frozen-thawed chicken breast meat. Conclusion: Impedance measurement has a potential to assess the quality of frozen chicken meat combining with quality indices.

Magnetic Properties of NixFe100-x(x=40~50) Permalloy Powders and Dust Cores Prepared by Gas-Atomization (가스 분무법으로 제조된 NixFe100-x(x=40~50) 퍼멀로이 분말 및 압분 코아의 자기적 특성)

  • Noh, T.H.;Kim, G.H.;Choi, G.B.;Kim, K.Y.
    • Journal of the Korean Magnetics Society
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    • v.12 no.6
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    • pp.218-223
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    • 2002
  • We investigated the magnetic properties of High Flux-type $Ni_{x}Fe_{100-x}$(x=40∼50, wt.%) permalloy powders and dust cores. The powder was prepared by conventional gas atomization in mass production scale. At the composition of $Ni_{x}Fe_{55}$, saturation magnetization was maximum. In case of lower Ni content than X=45, the $M_{s}$, decreased largely with the decrease in Ni content, which is due to the invar effect. The permeability of compressed powder cores increased with the decrease in Ni content, which was considered to be due to the decrease in the magnetostriction. In addition, the dust core with Ni=45% showed the lowest core loss because of the increase in electrical resistivity leading to the low eddy current loss. From the better frequency dependence of permeability, larger Q value and superior DC bias characteristics of Ni=45% than those of Ni=50% core, it was confirmed that the 45%Ni-55%Fe powder alloy was better material for the dust core than commercial High Flux core materials.

(Development of Ring Core Auto-Classifier by Multi-Motor Control) (여러 개의 모터에 의하여 제어되는 링-코어 자동 선별기 개발)

  • Park, In-Gyu
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.39 no.2
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    • pp.104-115
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    • 2002
  • Core is the main component of inductor. This core should be classified into around 10 classes according to the value of inductance and Q. The coil should be winded with the outer-boundary of this core by different number of turns. Theses kind of precise inductors would be required in the future environment which PCs and communication devices demand more high speed and lower voltage level. It would be quite unefficient that only one core is classified once a time. There, it will be developed so that 10 cores are classified simultaneously. For the operation of classifying 10 cores once in a time, suppose 10 test instruments could be used. In this case, it would take much cost since a test instrument Is expensive. So, by using only one test instrument, it is really more desirable that this system is developed. Each core classified by 10 different classes is to be stored into the corresponding box through the corresponding rubber hose. 10 cores are passed on a serial line and are placed on each testing slot. Here, each core located at each slot is tested, and then the bowl located on the top of a step motor is moved into the corresponding spot by rotating step motor with some angles. Each bowl connected with the corresponding box through rubber hose. Actually 100 hoses are connected, 10 step motors are rotated at 10 different angles, so the size is really so big, the shape of connecting 100 hoses is so complicated. Therefore it is anticipated that the system would be going to be easily out of ordered. In this paper the main purpose is to make several suggestions to be able to work well in these kinds of being affected by the abnormal operation of motors and the flow of cores.

Preparation of the SiO2 Films with Low-Dit by Low Temperature Oxidation Process (저온 산화공정에 의해 낮은 Dit를 갖는 실리콘 산화막의 제조)

  • Jeon, Bup-Ju;Jung, Il-Hyun
    • Applied Chemistry for Engineering
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    • v.9 no.7
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    • pp.990-997
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    • 1998
  • In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.

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Fabrication of GHz-Band FBAR with AIN Film on Mo/SiO2/Si(100) Using MOCVD (Mo/SiO2/Si(100)기판 위에 MOCVD법으로 성장시킨 AIN박막이용 GHz대역의 FBAR제작에 관한 연구)

  • Yang, Chung-Mo;Kim, Seong-Kweon;Cha, Jae-Sang;Park, Ku-Man
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.20 no.4
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    • pp.7-11
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    • 2006
  • In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

Low-temperature Sintering and Microwave Dielectric Properties of the B2O3 and CuO-added Ba(Mg1/3Nb2/3)O3 Ceramics (B2O3와 CuO가 첨가된 Ba(Mg1/3Nb2/3)O3 세라믹스의 저온소결과 마이크로파 유전특성 연구)

  • Lim, Jong-Bong;Son, Jin-Ok;Nahm, Sahn;Yoo, Myong-Jea;Lee, Woo-Sung;Kang, Nam-Kee;Lee, Hwack-Joo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.1
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    • pp.38-42
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    • 2005
  • B$_2$O$_3$ added Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ (BBMN) ceramics were not sintered below 900 $^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at 850 $^{\circ}C$. The amount of the $Ba_2$B$_2$O$_{5}$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B$_2$O$_3$ inhibiting the reaction between B$_2$O$_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and B$_2$O$_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density, the dielectric constant ($\varepsilon$$_{r}$) and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf = 21500 GHz, $\varepsilon$$_{r}$ = 31 and temperature coefficient of resonance frequency($\tau$$_{f}$) = 21.3 ppm/$^{\circ}C$ were obtained for the Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$+2.0 mol%B$_2$O$_3$+10.0 mol%CuO ceramic sintered at 875 $^{\circ}C$ for 2 h.h.2 h.h.

Analysis of Response Time and Reflectivity According to Driving Conditions of Barrier Rib-Type E-Paper Fabricated by Charged Particle Filtering Method (격벽형 전자종이의 하전입자 필터링 방법 및 구동조건에 따른 응답시간 및 반사율 분석)

  • Lee, Joo-Won;Kim, Young-Cho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.6
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    • pp.475-482
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    • 2020
  • For electronic paper displays using electrophoresis, the response time and reflectivity of the image panel fabricated by filtering are analyzed. For the filtering process, a square wave and ramp wave are applied to white charged particles with a unique q/m value. We divide the sample panels into #1 to #4 according to the applied waveform in the filtering process. Step waves comprising two steps are used to drive the panel; therefore, we divide the driving conditions into D1~D4. The applied voltage at the first stage of the half cycle of the driving waveform moves the charged particles attached via the image force from the electrode, and the applied voltage at the second stage moves the floating charged particles by detaching. As mentioned, four types of driving conditions (D1 to D4) classified according to the half cycle of the driving waveform are applied to the samples #1 to #4), which are classified according to four types of filtering process. When driving condition D1 is applied to the four types of sample panels, the rise time of #1 is 1.59s, #2 is 1.706s, #3 is 1.853s, and #4 is 1.235s, resulting in #4 being relatively faster compared with other sample panels, and showing the same trend in other driving conditions. As a result, we confirm that applying the driving condition D1 causes abrupt movement of the white charged particles injected into the cell. When the same driving waveform (D1) is applied to each sample, reflectivities of 32.1% for #1, 31.4% for #2, 27.9% for #3, and 63.4% for #4 are measured. From the experiment, we confirm that the driving condition D1 (1s of 3.5 V, 9s of 3.0 V) and ramp wave #4 in filtering are desirable for good reflectivity and response time. Our research is expected to contribute to the improvement of the filtering process and optimization of the driving waveform.

Low-Temperature Sintering and Microwave Dielectric Properties of the $B_2O_3-$ and CuO-added $Ba(Mg_{1/3}Nb_{2/3})O_3$ Ceramics ($B_2O_3$ 와 CuO가 첨가된 $Ba(Mg_{1/3}Nb_{2/3})O_3$ 세라믹스의 저온소결과 마이크로파 유전특성 연구)

  • Lim, Jong-Bong;Son, Jin-Ok;Nahm, Sahn;Yu, Myeong-Jae;Lee, Woo-Sung;Kang, Nam-Kee;Lee, Hwack-Joo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.838-841
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    • 2004
  • [ $B_2O_3$ ] added $Ba(Mg_{1/3}Nb_{2/3})O_3$ (BBMN) ceramics were not sintered below $900^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at $850^{\circ}C$. The amount of the $Ba_2B_2O_5$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the $B_2O_3$ inhibiting the reaction between $B_2O_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and $B_2O_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density the dielectric constant $({\varepsilon}_r)$ and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf=21500 GHz, ${\varepsilon}_r=31$ and temperature coefficient of resonance frequency$({\tau}_f)=21.3\;ppm/^{\circ}C$ were obtained for the $Ba(Mg_{1/3}Nb_{2/3})O_3+2.0\;mol%B_2O_3+10.0$ mol%CuO ceramic sintered at $875^{\circ}C$ for 2h.

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