• Clean Technology
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• v.20 no.4
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• pp.433-438
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• 2014

There is an increasing interest in the development of rechargeable batteries suitable for use in both hybrid electric vehicles and energy storage systems that require higher charge & discharge rates, bigger battery sizes and increased safety of the batteries. Spinel-type lithium titanium oxide ($Li_4Ti_5O_{12}$) as a potential anode for lithium ion batteries has many advantages. It is a zero-strain materials and it experiences no structural change during the charge/discharge precess. Thus, it has long cycle life due to its structural integrity. It also offers a stable operation voltage of approximately 1.55 V versus $Li^+/Li$, above the reduction potential of most organic electrolyte. In this study, Ru added $Li_4Ti_5O_{12}$ composites were synthesized by solid state process. The characteristics of active material were investigated with TGA-DTA, XRD, SEM and charge/discharge test. The capacity was reduced when Ru was added, however, the polarization decreased. The capacity rate of $Li_4Ti_5O_{12}$ with Ru (3%, 4%) addition was reduced during the charge/discharge precess with 10 C-rate as a high current density.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.276-276
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• 2010

Localized surface plasmon resonance (LSPR) has been explored recently as a promising approach to increase energy conversion efficiency in photovoltaic devices, particularly for thin film hydrogenated amorphous silicon (a-Si:H) solar cells. The LSPR is frequently excited via an electromagnetic (EM) radiation in proximate metallic nanostructures and its primary con sequences are selective photon extinction and local EM enhancement which gives rise to improved photogeneration of electron-hole (e-h) pairs, and consequently increases photocurrent. In this work, high-dielectric-constant (k) $ZrO_2$ (refractive index n=2.22, dielectric constant $\varepsilon=4.93$ at the wavelength of 550 nm) is proposed as spacing layer to enhance the LSPR for application to the thin film silicon solar cells. Compared to excitation of the LSPR using $SiO_2$ (n=1.46, $\varepsilon=2.13$ at the wavelength of 546.1 nm) spacing layer with Au nanoparticles of the radius of 45nm, that using $ZrO_2$ dielectric shows the advantages of(i) ~2.5 times greater polarizability, (ii) ~3.5 times larger scattering cross-section and ~1.5 times larger absorption cross-section, (iii) 4.5% higher transmission coefficient of the same thickness and (iv) 7.8% greater transmitted electric filed intensity at the same depth. All those results are calculated by Mie theory and Fresnel equations, and simulated by finite-difference time-domain (FDTD) calculations with proper boundary conditions. Red-shifting of the LSPR wavelength using high-k $ZrO_2$ dielectric is also observed according to location of the peak and this is consistent with the other's report. Finally, our experimental results show that variation of short-circuit current density ($J_{sc}$) of the LSPR enhanced a-Si:H solar cell by using the $ZrO_2$ spacing layer is 45.4% higher than that using the $SiO_2$ spacing layer, supporting our calculation and theory.

• Korean Chemical Engineering Research
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• v.61 no.3
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• pp.341-347
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• 2023

In PEMFC, PtCo/C alloy catalysts are widely used because of good performance and durability. However, few studies have been reported on the durability of carbon supports of PtCo/C evaluated at high voltages (1.0~1.5 V). In this study, the durability of PtCo/C catalysts and Pt/C catalysts were compared after applying the accelerated degradation protocol of catalyst support. After repeating the 1.0↔1.5V voltage change cycles, the mass activity, electrochemical surface area (ECSA), electric double layer capacitance (DLC), Pt dissolution and the particle growth were analyzed. After 2,000 cycles of voltage change, the current density per catalyst mass at 0.9V decreased by more than 1.5 times compared to the Pt/C catalyst. This result was because the degradation rate of the carbon support of the PtCo/C catalyst was higher than that of the Pt/C catalyst. The Pt/C catalyst showed more than 1.5 times higher ECSA reduction than the PtCo/C catalyst, but the corrosion of the carbon support of the Pt/C catalyst was small, resulting in a small decrease in I-V performance. In order to improve the high voltage durability of the PtCo/C catalyst, it was shown that improving the durability of the carbon support is essential.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Korean Journal of Ecology and Environment
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• v.50 no.1
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• pp.1-15
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• 2017

Daecheong Reservoir was made by the construction of a large dam (>15 m in height) on the middle to downstream of the Geum River and the discharge systems have the watergate-spillway (WS), a hydropower penstock (HPP), and two intake towers. The purpose of this study was to investigate the limnological anomalies of turbid water reduction, green algae phenomenon, and oligotrophic state in the lower part of reservoir dam site, and compared with hydro-meteorological factors. Field surveys were conducted in two stations of near dam and the outlet of HPP with one week intervals from January to December 2000. Rainfall was closely related to the fluctuations of inflow, outflow and water level. The rainfall pattern was depended on the storm of monsoon and typhoon, and the increase of discharge and turbidity responded more strongly to the intensity than the frequency. Water temperature and DO fluctuations within the reservoir water layer were influenced by meteorological and hydrological events, and these were mainly caused by water level fluctuation based on temperature stratification, density current and discharge types. The discharges of WS and HPP induced to the flow of water bodies and the outflows of turbid water and nutrients such as nitrogen and phosphorus, respectively. Especially, when hypoxic or low-oxygen condition was present in the bottom water, the discharge through HPP has contributed significantly to the outflow of phosphorus released from the sediment into the downstream of dam. In addition, HPP effluent which be continuously operated throughout the year, was the main factor that could change to a low trophic level in the downreservoir (lacustrine zone). And water-bloom (green-tide) occurring in the lower part of reservoir was the result that the water body of upreservoir being transported and diffused toward the downreseroir, when discharging through the WS. Finally, the hydropower effluent was included the importance and dynamics that could have a temporal and spatial impacts on the physical, chemical and biological factors of the reservoir ecosystem.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.367-371
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• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.