• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.203-212
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• 2010

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

• Nuclear Engineering and Technology
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• v.51 no.1
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• pp.13-30
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• 2019

This paper presents the recent improvements in the DeCART code for HTGR analysis. A new 190-group DeCART cross-section library based on ENDF/B-VII.0 was generated using the KAERI library processing system for HTGR. Two methods for the eigen-mode adjoint flux calculation were implemented. An azimuthal angle discretization method based on the Gaussian quadrature was implemented to reduce the error from the azimuthal angle discretization. A two-level parallelization using MPI and OpenMP was adopted for massive parallel computations. A quadratic depletion solver was implemented to reduce the error involved in the Gd depletion. A module to generate equivalent group constants was implemented for the nodal codes. The capabilities of the DeCART code were improved for geometry handling including an approximate treatment of a cylindrical outer boundary, an explicit border model, the R-G-B checker-board model, and a super-cell model for a hexagonal geometry. The newly improved and implemented functionalities were verified against various numerical benchmarks such as OECD/MHTGR-350 benchmark phase III problems, two-dimensional high temperature gas cooled reactor benchmark problems derived from the MHTGR-350 reference design, and numerical benchmark problems based on the compact nuclear power source experiment by comparing the DeCART solutions with the Monte-Carlo reference solutions obtained using the McCARD code.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.5
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• pp.904-911
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• 2010

This paper presents the design of acoustic resonance free and over current limit during transient state consideration electronic ballast for 1.5kW Metal-Halide Lamp(MHL) that employs frequency modulation (FM) technique. The proposed ballast consists of a Full-Bridge(FB) rectifier, a passive power factor correction (PFC) circuit, a full-bridge inverter, an ignitor using LC resonance and a control circuit for frequency modulation. The frequency modulation technique is the most effective solution to eliminate acoustic resonance among other technique. It spreads power spectrum of lamp to reduce the supplied power spectrum under the energy level of eigen-value frequency. Moreover, the proposed ballast is simple and cost effective above conventional ballast. A new PFC circuit is proposed which combines with LCD type and PCSR filter. A new PFC circuit has higher PF and lower THD than conventional LCD type and secure high reliability. Finally, to protected switching components in transient state, the surge current into ballast is limited by increase the switching frequency. Performance of the proposed ballast was validated through computer simulation using Pspice, experimentation and by applying it to an electronic ballast for a prototype 1.5kW MHL.