• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.148-152
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• 2009

Recent CMOS technology scaling has seriously eroded the bit-line noise immunity of register files due to the consequent increase in active bit-line leakage currents. To restore its noise immunity while maintaining performance, we propose and evaluate a $256{\times}40$-bit register file incorporating dual-$V_t$ bit-lines with a boosted gate overdrive voltage in 65 nm bulk CMOS technology. Simulation results show that the proposed bootsrapping scheme lowers leakage current by a factor of 450 without its performance penalty.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.527-530
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• 2009

We report on the fabrication of ZnO-based dual gate (DG) thin-film transistors (TFTs) with 20 nm-thick $Al_2O_3$ for both top and bottom dielectrics, which were deposited by atomic layer deposition on glass substrates at $200^{\circ}C$. Whether top or bottom gate is biased for sweep, our TFT almost symmetrically operates under a low voltage of 5 V showing a field mobility of ~0.4 $cm^2/V{\cdot}s$ along with the on/off ratio of $5{\times}10^4$. The threshold voltage of our DG TFT was systematically controlled from 0.5 to 2.0 V by varying counter gate input from +5 to -2 V.

• Journal of applied mathematics & informatics
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• v.5 no.2
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• pp.449-456
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• 1998

In this paper a new type of t-operators with double threshold a,b,$\in$(0,1). a$\leq$b, is presented, each pair (t-norm, t-conorm) consisting of two dual elements with respect to a negation with double threshold.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1103-1106
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• 2006

We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.

• Journal of Biomedical Engineering Research
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• v.23 no.6
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• pp.477-484
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• 2002

A pacemaker autosense algorithm with dual thresholds. one for noise or tachyarrhythmia detection (noise threshold, NT) and the other for intrinsic beat detection (sensing threshold. ST), was developed to improve the sensing performance in single pass VDD electrograms. unipolar electrograms, or atrial fibrillation detection. When a deflection in an electrogram exceeds the NT (defined as 50% of 57), the autosense algorithm with dual thresholds checks if the deflection also exceeds the ST. If it does, the autosense algorithm calculates the signal to noise ratio (SNR) of the deflection to the highest deflection detected by NT but lower than ST during the last cardiac cycle. If the SNR 2, the autosense algorithm declares an intrinsic beat detection and calculates the next ST based on the three most recent intrinsic peaks. If the SNR $\geq$2, the autosense algorithm checks the number of deflections detected by NT during the last cardiac cycle in order to determine if it is a noise detection or tachyarrhythmia detection. Usually the autosense algorithm tries to set the 57 at 37.5% of the average of the three intrinsic beats, although it changes the percentage according to event classifications. The autosense algorithm was tested through computer simulation of atrial electrograms from 5 patients obtained during EP study, to simulate a worst sensing situation. The result showed that the ST levels for autosense algorithm tracked the electrogram amplitudes properly, providing more noise immunity whenever necessary. Also, the autosense algorithm with dual thresholds achieved sensing performance as good as the conventional fixed sensitivity method that was optimized retrospectively.

• Journal of applied mathematics & informatics
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• v.19 no.1_2
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• pp.1-17
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• 2005

In this paper we present a pair of operators (t-norm, t-conorm) dual with a strong negation with n-threshold $a_1,\;{\ldots}, a_n\;{\in}(0,1),\;a_1\;<\;a_2\;<\;{\ldots}\;<\;a_n$. In this way we obtain an extension of operators with threshold, that are obtained for n = 1. The new pair is obtained from given one.

• Proceedings of the Korea Water Resources Association Conference
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• 2021.06a
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• pp.141-141
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• 2021

This study proposed an equation for Rainfall Threshold for Flood Warning (RTFW) for urban areas based on computer simulations. First, a coupled 1D-2D dual-drainage model was developed for nine watersheds in Seoul, Korea. Next, the model simulation was repeated for a total of 540 combinations of the synthetic rainfall events and watershed imperviousness (9 watersheds × 4 NRCS Curve Number (CN) values × 15 rainfall events). Then, the results of the 101 simulations with the critical flooded depth (0.25m-0.35m) were used to develop the equation that relates the value of RTFW to the rainfall event temporal variability (represented as coefficient of variation) and the watershed Curve Number. The results suggest that 1) the rainfall with greater temporal variability causes critical floods with less amount of total rainfall; and that 2) the greater imperviousness requires less rainfall to have critical floods. For validation, the proposed equation was applied for the flood warning system with two storm events occurred in 2010 and 2011 over 239 watersheds in Seoul. The results of the application showed high performance of the warning system in issuing the flood warning, with the hit, false and missed alarm rates at 68%, 32% and 7.4% respectively for the 2010 event and 49%, 51% and 10.7% for the event in 2011.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.504-510
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• 2015

This paper presents a power and area efficient SAR ADC for multi-channel near threshold-voltage (NTV) applications such as neural recording systems. This work proposes a split dual-capacitive-array (S-DCA) structure with shifted input range for ultra low-switching energy and architecture of multi-channel single-ended SAR ADC which employs only one comparator. In addition, the proposed ADC has the same amount of equivalent capacitance at two comparator inputs, which minimizes the kickback noise. Compared with conventional SAR ADC, this work reduces the total capacitance and switching energy by 84.8% and 91.3%, respectively.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.1
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• pp.69-75
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• 2019

The standard application area of over-sampled discrete wavelet transform is noise removal technology for digital images. Comparing dual density discrete wavelet transform with dual tree discrete wavelet transform, we have almost similar characteristics. In this paper, several discrete wavelet transforms are accomplished on digital image existing with noise, noises are removed with threshold processing algorithm on subband, performance evaluation experiments of the reconstructed images are accomplished. If we decide appropriate threshold value, the effect noise removal is possible. In this paper, we can certified that the suggested algorithm of 3-direction separable processing with 2 dimension dual density discrete wavelet transform is superior to several experiment results.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.6
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• pp.154-159
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• 2003

In this paper, we proposed variable threshold dual rate ADPCM coding method which adapts two coding rates of the standard ADPCM of ITU G.726 for speech quality improvement at a comparably low coding rates. The ZCR(Zero Crossing Rate) is computed for speecd data and under the noisy environment, noise data dominant region showed higher ZCR and speech data dominant region showed lower ZCR. The speech data with the higher ZCR is encoded by low coding rate for reduced coded data and the speech data with the lower ZCR is encoded by high coding rate for speech quality improvements. For coded data, 2 bits are assigned for low coding rate of 16[Kbps] and 5 bits are is assigned for high coding rate of 40[Kbps]. Through the simulation, the proposed idea is evaluated and shown that the variable dual rate ADPCM coding technique shows the qood speech quality at low coding rate.