• 제목/요약/키워드: dual thickness

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Thrust Characteristics of Dual Flapping Airfoils in a Biplane Configuration (복엽기 배치의 복식 플랩핑 에어포일들의 추력 특성)

  • Yu, Young-Bok;Han, Cheol-Heui;Cho, Jin-Soo
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • 제33권7호
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    • pp.9-17
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    • 2005
  • The wake patterns and thrust characteristics of dual flapping airfoils in a biplane configuration are investigated using an unsteady panel method. To trace complicated wake shapes behind airfoils, a core addition scheme, a vortex core model, and the fourth order Runge-Kutta convection scheme are employed. Present results are verified by comparing them with flow visualization, exact solution and published computed results. The thickness and camber of thick airfoils has an effect of decreasing thrust. The airfoils produce maximum thrust when the phase angles between plunging and pitching motions are both 90 and 120 degrees. Thrust increases as the plunge velocity is increased, which is also found as the pitch amplitude is stepped up. Thrust decreases when the distance between the airfoils is less than 0.6c.

Role of $N_2$ flow rate on etch characteristics and variation of line edge roughness during etching of silicon nitride with extreme ultra-violet resist pattern in dual-frequency $CH_2F_2/N_2$/Ar capacitively coupled plasmas

  • Gwon, Bong-Su;Jeong, Chang-Ryong;Lee, Nae-Eung;Lee, Seong-Gwon
    • Proceedings of the Korean Vacuum Society Conference
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.458-458
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    • 2010
  • The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.

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Design of Wide band folded monopole slot antenna for 3G/4G/5G/Wi-Fi(dual band) services (3G/4G/5G/Wi-Fi(이중대역)용 광대역 모노폴 슬롯 안테나 설계)

  • Shin, Dong-Gi;Lee, Yeong-Min;Lee, Young-Soon
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • 제22권1호
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    • pp.127-134
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    • 2022
  • A modified folded monopole slot antenna for 3G WCDMA (1.91 ~ 2.17 GHz), 4G LTE (2.17 ~ 2.67 GHz), 3.5 GHz 5G (3.42 ~ 3.7 GHz) and Wi-Fi dual band (2.4 ~ 2.484 GHz / 5.15 ~ 5.825 GHz) was proposed for the first time. The proposed antenna is designed and fabricated on a FR-4 substrate with dielectric constant 4.3, thickness of 1.6 mm, and size of 35 × 60 mm2. The measured impedance bandwidth of the proposed antenna is 2910 MHz(1.84 ~ 4.75 GHz) and 930 MHz(5.11 ~ 6.04 GHz), antenna gain in each frequency band is from 1.811 to 3.450 dBi. In particular, it was possible to obtain a commercially suitable omni-directional radiation pattern in all frequency bands of interest.

The Effect of Cold-rolling on Microstructure and Transformation Behavior of Cu-Zn-Al shape Memory Alloy (냉간가공에 의한 CuZnAl계 현상기억합급의 결정립미세화와 특성평가)

  • Lee, Sang-Bong;Park, No-Jin
    • Korean Journal of Materials Research
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    • 제9권3호
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    • pp.322-326
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    • 1999
  • In this study, cold-rolling and appropriate annealing was adopted for the grain refining of Cu-26.65Zn-4. 05Al-0.31Ti(wt%) shape memory alloy. For the cold deformation of this alloy the ducti1e $\alpha$-phase must be contained. After heat treatment at $550^{\circ}C$ the $(\alpha+$\beta)$-dual phase with 40vol.% $\alpha$-phase was obtained which could be rolled at room temperature. This alloy was cold rolled into a final thickness of 1.0mm with total reduction degrees of 70% and 90%. The rolled sheets were betanized at $800^{\circ}C$ for various times, then quenched into ice water. The grain size of co]d rolled samples were $60~80\mu\textrm{m}$ which is much smaller comparing with the hot-rolled samples. And the 90% rolled sample showed smaller grain size than the case of the 70% rolled one. The small grain size had influence on the phase transformation temperatures and stabilization of the austenitic phases.

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Design of Zero-Layer FTP Memory IP (PMIC용 Zero Layer FTP Memory IP 설계)

  • Ha, Yoongyu;Jin, Hongzhou;Ha, Panbong;Kim, Younghee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • 제11권6호
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    • pp.742-750
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    • 2018
  • In this paper, in order to enable zero-layer FTP cell using only 5V MOS devices on the basis of $0.13{\mu}m$ BCD process, the tunnel oxide thickness is used as the gate oxide thickness of $125{\AA}$ of the 5V MOS device at 82A. The HDNW layer, which is the default in the BCD process, is used. Thus, the proposed zero layer FTP cell does not require the addition of tunnel oxide and DNW mask. Also, from the viewpoint of memory IP design, a single memory structure which is used only for trimming analog circuit of PMIC chip is used instead of the dual memory structure dividing into designer memory area and user memory area. The start-up circuit of the BGR (Bandgap Reference Voltage) generator circuit is designed to operate in the voltage range of 1.8V to 5.5V. On the other hand, when the 64-bit FTP memory IP is powered on, the internal read signal is designed to maintain the initial read data at 00H. The layout size of the 64-bit FTP IP designed using the $0.13-{\mu}m$ Magnachip process .is $485.21{\mu}m{\times}440.665{\mu}m$($=0.214mm^2$).

Stress Distribution in Concrete Pavements under Multi-Axle Vehicle Loads Obtained Using Transformed Field Domain Analysis (변환영역 해석법을 통한 콘크리트 도로 포장의 다축 차량 하중에 대한 응력 분포 분석)

  • Kim, Seong-Min;Shim, Jae-Soo;Park, Hee-Beom
    • Journal of the Korea Concrete Institute
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    • 제18권5호
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    • pp.695-702
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    • 2006
  • The stress distribution and the critical stresses in concrete pavements were analyzed using formulations in the transformed field domains when dual-wheel single-, tandem-, and tridem-axle loads were applied. First the accuracy of the transformed field domain analysis results was verified by comparing with the finite element analysis results. Then, the stress distribution along the longitudinal and transverse directions was investigated, and the effects of slab thickness, concrete elastic modulus, and foundation stiffness on the stress distribution were studied. The effect of the tire contact pressure related to the tire print area was also studied, and the location of the critical stress occurrence in concrete pavements was finally investigated. From this study, it was found that the critical concrete stress due to multi-axle loads became larger as the concrete elastic modulus increased, the slab thickness increased, and the foundation stiffness decreased. The number of axles did not tend to affect the critical stress ratio except for a small foundation stiffness value with which the critical stress ratio became significantly larger as the number of axles increased. The critical stress location in the transverse direction tended to move into the interior as the tire contact pressure increased, the concrete elastic modulus increased, the slab thickness increased, and the foundation stiffness decreased. The critical stress location in the longitudinal direction was under the axle for single- and tandem-axle loads, but for tridem-axle loads, it tended to move under the middle axle from the outer axles as the concrete elastic modulus and/or slab thickness increased and the foundation stiffness decreased.

Development of On-Board Dual-Band Antenna for Small Walkie-Talkie (소형 무전기를 위한 On-Board 이중대역 안테나 개발)

  • Park, Young-bae;Lee, Sang-suck;Lee, Young-hun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • 제26권10호
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    • pp.885-894
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    • 2015
  • In this paper, it can be applied to a walkie-talkie, the RFID / USN 920 MHz band(917~923.5 MHz) and WiFi 2.4GHz band(2.4~2.483 5GHz) return loss is 10 dB over the band, on-board dual band with omni-directional radiation characteristics is proposed. The basic structure designed antenna is used meander monopole antenna. It was used as double stubs and tabs for antenna designs that meet the criteria proposed. The double stub and the tab affects the reactance of the antenna to form a common-mode and differential-mode in the stub to improve the antenna characteristics and return loss in the bandwidth, gain and radiation characteristics. The system size of walkie-talkie is $52{\times}77mm^2$, the size of the antenna is limited to $52{\times}15mm^2$, the thickness of FR4 dielectric substrate is 0.8 mm, FR4 dielectric constant 4.4 is used. For experimental results, the return loss is measured more than 10 dB, the maximum gain is measured 1.95 dB, the maximum bandwidth is measured 360 MHz, the radiation characteristic is measured omni-directional. By a walkie-talkie terminal design applying the results of the paper, the handset's price competitiveness and production efficiency can be improved.

Design and Fabrication of Dual Linear Polarization Antenna for 28 GHz Band (28 GHz 대역에서 동작하는 이중 선형편파 안테나의 설계 및 제작)

  • Yoon, Joong-Han
    • The Journal of the Korea institute of electronic communication sciences
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    • 제17권1호
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    • pp.13-22
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    • 2022
  • In this paper, we propose single and array antenna with dual linear polarization characteristics for 28 GHz band. The proposed antenna is designed two microstirp feeding structure and Taconic TLY-5 substrate, which is thickness 0.5 mm, and the dielectric constant is 2.2. The size of single patch antenna is 3.4 mm×3.4 mm, and total size of single antenna is 15.11 mm×15.11 mm. Also, the size of array antenna is 3.15 mm×3.15 mm, and total size of array antenna is 21.5 mm×13.97 mm. From the fabrication and measurement results, for 1×2 array antenna, in case of vertical polarization, cross polarization ratios are obtained from 14.23 dB to 20.79 dB and in case of horizontal polarization, cross polarization ratios are obtained from 14.31 dB to 22.74 dB for input port 1. in case of vertical polarization, cross polarization ratios are obtained from 15.75 dB to 25.88 dB and in case of horizontal polarization, cross polarization ratios are obtained from 14.70 dB to 22.82 dB for input port 2.

Design and Fabrication of Dual Linear Polarization Antenna for mmWave Application using FR-4 Substrate

  • Choi, Tea-Il;Yoon, Joong-Han
    • Journal of the Korea Society of Computer and Information
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    • 제27권3호
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    • pp.71-77
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    • 2022
  • In this paper, we propose 1×2 array antenna with dual linear polarization characteristics for mmWave band operation. The proposed antenna is designed two microstirp feeding structure and FR-4 substrate, which is thickness 0.4 mm, and the dielectric constant is 4.3. The size of 1×2 array antenna is 2.33 mm×2.33 mm, and total size of array antenna is 13.0 mm×6.90 mm. From the fabrication and measurement results, bandwidths of 1.13 GHz (28.52~29.65 GHz) for port 1 and 1.08 GHz (28.45~29.53 GHz) for port 2 were obtained based on the impedance bandwidth. Cross polarization ratios are obtained from 7.68 dBi to 16.90 dBi in case of vertical polarization, and from 7.46 dBi to 15.97 dBi in case of horizontal polarization for input port 1, respectively. Also, cross polarization ratios are obtained from 8.59 dBi to 13.72 dBi in case of vertical polarization and from 9.03 dB to 14.0 dB in case of horizontal polarization for input port 2, respectively.

Design and Fabrication of Dual Linear Polarization Patch Antenna with Aperture Coupled Feeding Structure (개구 결합 급전 구조를 갖는 이중 선형편파 패치 안테나의 설계 및 제작)

  • Joong-Han Yoon
    • The Journal of the Korea institute of electronic communication sciences
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    • 제18권6호
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    • pp.1015-1022
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    • 2023
  • In this paper, we propose DLP(Dual Linear Polarization) antenna with aperture coupled feeding structure for private network. The proposed antenna has general aperture coupled structure and design two port between top and bottom layer to obtain the enhanced isolation. Also, The size of each substrate(top and bottom layer) is 34.0 mm(W)×34.0 mm(L), which is designed on the FR-4 substrate which thickness (h) is 1.0 mm, and the dielectric constant is 4.4. Also, the size of patch antenna is 12.70 mm(W2)×14.60 mm(L3), and it is located on the top layer. The size of feeding line is 24.0 mm(W2)×1.6 mm(L3), and is located at the bottom layer Also, rectangular slot is located on the ground plane between top layer and bottom layer. From the fabrication and measurement results, bandwidths of 300 MHz (4.52 to 4.82 GHz) for feeding port 1, and 170 MHz (4.65 to 4.82 GHz) for feeding port 2 are obtained on the basis of -10 dB return loss and transmission coefficient S21 is got under the -30 dB. Also, cross polarization isolation between each feeding port obtained