• Proceedings of the IEEK Conference
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• 2003.07c
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• pp.2733-2736
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• 2003

This paper proposes a dry-type active surface EMG electrode for the myoelectric prosthetic hand. The designed electrode is small size for embedding in the socket of prosthetic hand, and it has three leads including the reference of signal. To acquire EMG signal rejected the power noise, a precision differential amplifier and various filters such as the band pass filter band rejection filter, low pass and high pass filter are embedded on the electrode. The final output of the electrode is integrated absolute EMG (IEMG) obtained by full rectifier and moving average circuits. From experimental results using the implemented dry-type active surface EMG electrode, the proposed electrode is feasible for the myoelectric prosthetic hand.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.55 no.12
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• pp.550-557
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• 2006

This paper proposes a dry-type surface myoelectric sensor for the myoelectric hand prosthesis. The designed surface myoelectric sensor is composed of skin interface and processing circuits. The skin interface has one reference and two input electrodes, and the reference electrode is located in the center of two input electrodes. In this paper is proposed two types of sensors with the circle- and bar-shaped reference electrode, but all input electrodes are the bar-shaped. The metal material of the electrodes is the stainless steel (SUS440) that endures sweat and wet conditions. Considering the conduction velocity and the median frequency of the myoelectric signal, the inter-electrode distance (IED) between two input electrodes as 18mm, 20mm, and 22mm is selected. The signal processing circuit consists of a differential amplifier with a band pass filter, a band rejection filter for rejecting 60Hz power-line noise, amplifiers, and a mean absolute value(MAV) circuit. Using SUS440, six prototype skin interface with different reference electrode shape and IED is fabricated, and their output characteristics are evaluated by output signal obtained from the forearm of a healthy subject. The experimental results show that the skin interface with parallel bar shape and the 18mm IED has a good output characteristics. The fabricated dry-type surface myoelectric sensor is evaluated for the upper-limb amputee.

• Annals of Clinical Neurophysiology
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• v.13 no.2
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• pp.80-86
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• 2011

Background: A dry-type electrode is an alternative to the conventional wet-type electrode, because it can be applied without any skin preparation, such as a conductive electrolyte. However, because a dry-type electrode without electrolyte has high electrode-to-skin impedance, an impedance-converting amplifier is typically used to minimize the distortion of the bioelectric signal. In this study, we developed an active dry electroencephalography (EEG) electrode using an impedance converter, and compared its performance with a conventional Ag/AgCl EEG electrode. Methods: We developed an active dry electrode with an impedance converter using a chopper-stabilized operational amplifier. Two electrodes, a conventional Ag/AgCl electrode and our active electrode, were used to acquire EEG signals simultaneously, and the performance was tested in terms of (1) the electrode impedance, (2) raw data quality, and (3) the robustness of any artifacts. Results: The contact impedance of the developed electrode was lower than that of the Ag/AgCl electrode ($0.3{\pm}0.1$ vs. $2.7{\pm}0.7\;k{\Omega}$, respectively). The EEG signal and power spectrum were similar for both electrodes. Additionally, our electrode had a lower 60-Hz component than the Ag/AgCl electrode (16.64 vs. 24.33 dB, respectively). The change in potential of the developed electrode with a physical stimulus was lower than for the Ag/AgCl electrode ($58.7{\pm}30.6$ vs. $81.0{\pm}19.1\;{\mu}V$, respectively), and the difference was close to statistical significance (P=0.07). Conclusions: Our electrode can be used to replace Ag/AgCl electrodes, when EEG recording is emergently required, such as in emergency rooms or in intensive care units.

• Proceedings of the KIPE Conference
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• 2007.07a
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• pp.247-249
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• 2007

This paper proposes a dry-type surface myoelectric sensor for the myoelectric hand prosthesis. The designed surface myoelectric sensor is composed of skin interface and processing circuits. The skin interface has one reference and two input electrodes, and the reference electrode is located in the center of two input electrodes. Considering the conduction velocity and the median frequency of the myoelectric signal, the inter-electrode distance (IED) between two input electrodes as 18mm, 20mm, and 22mm is selected. The signal processing circuit consists of a differential amplifier with a band pass filter, a band rejection filter for rejecting 60㎐ power-line noise, amplifier, and a level circuit. Using SUS440, six prototype skin interface with different reference electrode shape and IED is fabricated, and their output characteristics are evaluated by output signal obtained from the forearm of a healthy subject. The experimental results show that the skin interface with parallel bar shape and the 18mm IED has a good output characteristics. The fabricated dry-type surface myoelectric sensor is evaluated for the upper-limb amputee.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.10 no.3
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• pp.92-97
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• 2011

In this paper, a controller recognizing human gestures using EMG signal is shown. The tiny and band-type controller is developed for image training to excercise the specific area in the body, and uses a dry-type silver fiber electrode easy to be attached or detached itself to a skin. The captured EMG signals are converted to 10-bit digital values via amplification and frequency filtering processes within the controller, and are transmitted to the server by wireless. As the gesture recognition ratio using the proposed controller on biceps is up to 80%, we expect the practical potential of the controller is very promising.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.15-19
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• 2003

In This paper, we developed 1.96 GHz air gap type FBAR BPF using ZnO as piezoelectric sputtered by RF magnetron at room temperature. FBAR BPF was fabricated by sputtering bottom electrode (Al), ZnO as piezoelectric and top electrode (Mo) on Si wafer one by one with RF magnetron sputter, then Si was dry etched to make an air hole. XRD test result of fabricated FBAR BPF showed that ZnO crystal was well pre-oriented as (002) and sigma value of XRC was 1.018. IL(Insertion loss) showed excellent result as 1 dB.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.10a
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• pp.411-414
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• 2009

Photo-capacitor electrodes are attracting great attention because of their high capacitance and potential applications in electronic devices. Carbon capacitor, active carbon capacitor and its combination will be fabricated using simple sandwich capacitor electrode method as carbonaceous material on each type of capacitor electrodes with 20 ${\times}$ 15 mm cell size. Carbon/active carbon cell was fabricated using sol-gel process with 120oC dry temperature in l hour and using sintering process with 500oC in 2 hour. The effect of sintering temperature on carbon properties was also investigated with X-ray diffraction technique to get the best sintering temperature. The detail of fabrication process will be explained. Elemental composition in electrode material can be measured using quantitative spectroscopic as and a cyclic voltammetric technique was used to study the combined effects of electrode material and effect of annealing temperature and also time on the capacitance of thermally treated in capacitor electrode. In this work, characterization impedance technique is used to measurement of capacitance and giving complementary results. Active carbon as carbonaceous material has a better capacitance in charge/discharge process with mean thickness $32{\mu}m$ and with particle size $1{\mu}m$ to $4.5{\mu}m$ in 20 ${\times}$ 15 mm sample size of capacitor electrode.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1393-1398
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• 2009

Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.

• Proceedings of the IEEK Conference
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• summer
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• pp.343-347
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• 2004

High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dry­reoxidation. Gate oxidation and Ar anneal temperature was $1150^{\circ}C.$ Ar annealing was performed after gate oxidation for 30 minutes. Dry-reoxidation condition was $950^{\circ}C,$ H2O ambient for 2 hours. Gate oxide thickness of dry, wet and dry-reoxidation samples were 38.0 nm, 38.7 nm, 38.5 nm, respectively. Mo was adopted for gate electrode. To investigate quality of these gate oxide films, high frequency C- V measurement, gate oxide leakage current, and interface trapped charge densities (Dit) were measured. The interface trapped charge densities (Dit) measured by conductance method was about $4\times10^{10}[cm^{-1}eV^{-1}]$ for dry and wet oxidation, the lowest ever reported, and $1\times10^{11}[cm^{-1}eV^{-1}]$ for dry-reoxidation

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.7
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• pp.57-63
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• 2010

Photo-capacitor electrodes are attracting great attention because of their high capacitance and potential applications in electronic devices. Carbon capacitor, active carbon capacitor and its combination will be fabricated using a sandwich method as carbonaceous material on each type of storable electrode with $20{\times}15$[mm] cell size. Carbon/active carbon cell was fabricated using sol-gel process with $120[^{\circ}C]$ dry temperature in 2hour and using sintering process with $500[^{\circ}C]$ in 2hour. The effect of sintering temperature on carbon properties was also investigated with an X-ray diffraction technique to get the best sintering temperature. The detail of the fabrication process will be explained. Active carbon as carbonaceous material has a better capacitance in storable electrode with mean thickness $32[{\mu}m]$ and with particle size $1[{\mu}m]$ to $4.5[{\mu}m]$ in $20{\times}15$[mm] sample size of storable electrode.