• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권1호
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• pp.59-63
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• 2000

For the Mo-tip field emitter array, the method by which the geometrical structure of the gate insulator wall could be modified in order to improve field emission properties(turn-on voltage and gate leakage current). The device having a gate insulator of complex shape, which means the combined geometrical structure with round shape made by wet etching and vertical shape made by dry etching processes, was fabricated and the field emission properties of the three kinds of devices were compared. As a result, the electric field applied to tip apex could be increased and gate leakage current could be decreased by employing the gate insulator having geometrical wall structure of mixed shape. Finally, the obtained empirical results were analyzed by simulation of electric field distribution at/near the tip apex and gate insulator using SNU-FEAT simulator.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1271-1276
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• 2004

Two-dimensionally arrayed nanocolumn lattices were fabricated by using double-exposure laser holographic method. The hexagonal lattice was formed by rotating the sample with 60 degree while the square lattice by 90 degree before the second laser-exposure. The reactive ion etching for a typical time of 30 min using CH$_4$/H$_2$ plasma enhanced the aspect-ratio by more than 1.5 with a slight increase of the bottom width of columns. The etch-damage was observed by photoluminescence (PL) spectroscopy which was removed by the wet chemical etching using HBr/$H_2O$$_2$/$H_2O$ solution, leading into the enhanced PL intensities of the PCs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1343-1345
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• 1998

This work was carried out to develop a pattern on the nanometer scale using plasma polymerization and plasma etching. This study is also aimed at developing a resist for the nano process and a vacuum lithography process. The thin films of plasma polymerization were fabricated by the plasma polymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern at accelerating voltage of 30[kV], ranging the dose of $1-500[{\mu}C/cm^2$], the pattern was developed with dry type and formed by plasma etching.

• 센서학회지
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• 제20권3호
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• pp.187-192
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• 2011

Abrasive blaster is similar to sand blaster, and effectively removes hard and brittle materials. Exiting abrasive blaster has applied to rough working such as deburring and rough finishing. As the need for machining of ceramics, semiconductor, electronic devices and LCD are increasing, micro abrasive blaster was developed, and became the inevitable technique to micromachining. This paper describes the performance of the micro blaster in MEMS process of glass and succeed in domestically producing complete micro blaster. Diameter of hole and width of line in this etching is 100 ${\mu}m$ ~ 1000 ${\mu}m$. Experimental results showed good performance in micro channel and hole in glass wafer. Therefore, this micro blaster could be effectively applied to the micro machining of semiconductor, micro PCR chip.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1977-1979
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• 1996

Single-crystaIline silicon diaphgrams and features are fabricated without using an etch stop process. The process involves vertical dry etching, double-sided alignment, followed by wet-chemical etching from the back side. The abvantages of this process are that $5{\sim}50{\mu}m$ diaphgrams and features can be fabricated accurately and inexpensively. In addition, since no impurity-based process is introduced, highly uniform and homogenous properties can be achieved

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.404-407
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• 2003

Among the ferroeletric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, the $SrBi_2Ta_2O_9$ (SBT) thin film is appropriate as a memory capacitor material due to its excellent fatigue endurance. SBT thin films were etched in high-density $Cl_2/Ar$ in inductively coupled plasma. The maximum etch rate of SBT film is $1834\;{\AA}/min$ under $Cl_2/(Cl_2+Ar)$ of 30 %, rf power of 700 W, dc-bias voltage of -250 V, chamber pressure of 11 mTorr and gas flow rate of 20 sccm.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1224-1231
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• 2003

This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91％.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1277-1279
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• 1997

In this study, the mechanism underlying the corrosion problem have been investigated using X-ray photoelectron spectroscopy(XPS) and scanning electron microscopy(SEM), AES(Auger electron spectroscopy) In regard to the removal of Al-Cu corrsion, the subsequent treatment of the $SF_6$ plasma has also been completed. This work evaluated the effects of grain boundary on the AlCu after dry etching and the role of subsequent $SF_6$ plasma for the removal of AlCu corrosion.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.824-828
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• 2016

In this study, effects of ICP (inductively coupled plasma) treatment on PAR thin film have been investigated. A maximum etch rate of the PAR thin films and the selectivity of PAR to PR were obtained as 110 nm/minand 1.1 in the $CF_4/O_2$ (5:15 sccm) gas mixture. We present the surface properties of PAR thin film with various treatment conditions. The surface morphology and cross section of the PAR thin film was observed by AFM (atomic force microscopy) and FE-SEM (filed emission scanning electron microscopy).

• Transactions on Electrical and Electronic Materials
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• 제13권1호
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• pp.6-9
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• 2012

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.