• 대한치과교정학회지
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• 제33권1호
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• pp.51-61
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• 2003

본 연구는 6세대 교정용 접착 시스템인 Transbond Plus Self-Etching Primer(3M/Unitek Dental Products, Monorovia, Calif)를 이용하여 법랑질면에 브라켓을 접착하는 방법과, 통상적인 산부식 방법에 의해 브라켓를 접착한 경우의 전단결합강도 차이를 비교$\cdot$평가하고, self etching primer를 이용하여 브라켓을 접착할 때 치면에 존재하는 수분이 브라켓의 저단결합강도에 미치는 영향에 관하여 조사하였다. $37\%$ 인산용액과 Self-Etching Primer를 이 용하여 법랑질을 표면 처 리하고 Transbond XT를 이 용하여 브라켓을 치면에 부착하였다. 또한 수분의 존재에 따른 전단결합강포의 차이를 평가하기 위해 인공타액을 치면예 도보후 Self-Etching Primer를 사용하여 브라켓을 부착한 후 30분과 24시간에 따른 전단결합강도를 비교 평가하여 다음과 같은 결론을 얻었다. 1. Self-etching primer군에서 건조군과 습윤군의 전단결합강도는 $37\%$인산처리군의 결합강도보다 낮았다(p<0.05). 그러나 Self-etching primer군의 전단결합강도는 일상적으로 유용한 수준의 이상이었다. 2. 모든군에서 24시간군의 전단결합강도가 30분군의 전단결합강도보다 높았으며 (p<0.05), 이는 브라켓 접착후 일정시간의 경과가 결합강도를 증가시켜 줌을 알 수 있었다. 3. Self-etcing primer군에서 습윤군의 전단결합강도는 건조군보다 높은 경향이었으나 통계적 유의성은 인정되지 않았다(P>0.05). 4 ARI 점수의 비교결과 인산처리군에서는 0점과 1점의 빈도가 높았으며, Self-etching primer 건조군과 습윤군에서는 2점과 3점의 빈도가 높아(p<0.05) Self-etching primer군이 인산처리군보다 법랑질-레진 접착계면부위에서의 파절이 많이 일어남을 알 수 있었다.

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 동계학술발표회 논문집
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• pp.133-134
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• 2009

Cold temperature development (CTD) of electron beam (EB) patterned resists and subsequent dry etching were investigated for fabrication of nano-patterned Niobium (Nb). Bulky Nb fims on GaAs substrates were deposited with EB evaporation. Line patterns on Nb cathode were fabricated by EB patterning and reactive ion etching (RIE). Size deviations of nano-sized line patterns from CAD designed patterns are dependent on the EB total exposure, but it can be improved by CTD of EB-exposed resist. Line patterns of 10 to 300 nm widths of EB-exposed resist patterns were drawn under various exposure conditions of $0.2{\mu}s$/dot (total 240,000 dot) with a constant current (50 pA). Compared with room temperature development (RTD), the CTD improves pattern resolution due to the suppression of backscattering effect. RIE with $CF_4$ was performed for formation of several nano-sized line patterns on Nb. Each EB-resist patterned samples with RTDs and CTDs were etched with two different $CF_4$ gas pressures of 5 Pa. Nb etching rate increases while GaAs (or ZEP) etching rate decreases as the chamber pressure increases. This different dependent of the etching rate on the $CF_4$ pressure between Nb and GaAs (or ZEP) has a significant meaning because selective etching of nano-sized Nb line patterns is possible without etching of the underlying active layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1038-1041
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• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

• 한국진공학회지
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• 제17권2호
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• pp.113-116
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• 2008

반도체 소자 집적도의 비약적인 발전으로 인하여 반도체 공정은 더욱 다층화 되어가고 있다. 이러한 다층화 공정에서는 필수적으로 여러 단계의 패턴을 형성하기 위하여 Photoresist(PR)를 이용한 식각 공정을 사용하게 된다. 이러한 식각 공정에서 다단계 식각 공정으로 인한 공정시간 증가와 식각 후 남은 잔여 PR residue는 초고집적화된 현 반도체 산업에서는 소자에 치명적인 문제를 발생시킨다. 따라서 본 연구에서는 기존 PR strip 용액을 플라즈마에 의하여 액체 상태로 활성화하여 기존의 건식세정법과 습식세정법을 동시에 사용하여 PR을 효과적으로 제거하기 위한 방법을 연구하였다. 플라즈마에 의하여 약액을 활성화하기 위하여 먼저 플라즈마 약액활성화를 위한 장치를 simulation하여 실험 장치에서 균일한 gas흐름을 확인하였다. 이후 플라즈마의 세기를 0V에서 100V까지 증가시켜 약액을 활성화한 후 PR을 strip하여 각 플라즈마 세기에서의 식각률을 조사하였으며 80V에서 가장 빠른 식각률을 나타났다. 또한 0V와 80V의 Dilution에 대한 영향을 확인하였으며 약액을 Dilution 후에도 식각률은 더욱 향상됨을 확인할 수 있었다. 이러한 세정 시간의 단축은 여러 단계의 식각 공정 시간을 단축하여 반도체 공정에서 소자 생산을 위한 시간을 단축하게 된다. 또한 각 세정공정마다 증가한 세정 공정으로 인하여 세정액의 사용이 많아져 세정액 폐수로 인한 환경문제가 심각해지고 있다. 세정 약액 활성화 방법을 사용함으로써 세정액의 절감효과가 나타난다.

• 한국재료학회지
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• 제10권6호
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• pp.450-455
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• 2000

실리콘 소자가 더욱 미세화되면서, 발생되는 power consumption, crosstalk와 interconnection delay 등을 감소시키기 위해 $SiO_2$ 대신에 저유전 상수막의 적용이 고려되어진다. 본 논문에서는, 저유전 상수 층간 절연막 재료로 유망한 폴리이미드의 식각 특성에 $O_2/SF_6$ 가스가 미치는 영향을 연구하였다. 폴리이미드의 식각률을 SF(sub)6 가스의 첨가에 따라 산소와 hydrocarbon 폴리머 간의 반응을 억제하는 비휘발성 물질은 fluorine 화합물의 형성에 의해 감소되었다. 반면에, 기판 전극의 전압 증가는 물리적인 충격을 통해 식각 공정을 증가시켰다. 또한 작은 량의 SF(sub)6 가스 첨가는 식각 topography에 바람직하였다. 폴리이미드 식각을 위한 $SiO_2$ hard mask 사용은 산소 플라즈마 식각 하에서 효과적이었다(선택비-30). 반면에 $O_2SF_6$ 가스 조성은 식각 선택비를 4로 저하시키게 되었다. 이러한 결과를 기초로, $1-2\mu\textrm{m}$ 선폭을 가진 PI 2610의 식각을 원활히 수행할 수 있었다.

• 한국세라믹학회지
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• 제40권9호
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• pp.886-890
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• 2003

단결정 LiNbO$_3$를 helicon wave plasma 방법으로 식각시 bias power와 CF$_4$, HBr, SR$_{6}$가 혼합된 gas 유량에 따른 식각 속도와 rms roughness 값의 특성을 관찰하였다. 식각된 깊이는 surface profiler로 관찰하였으며 rms roughness 값은 Atomic Force Microscopy (AFM)으로 측정하였다. Bias power 증가함에 따라 500W에서 가장 높은 식각 속도와 가장 평탄한 표면형상을 얻을 수 있었으며, CF$_4$, HBr, SF$_{6}$ gas 유량을 각각 10～30 sccm으로 증가시킴에 따라 식각 속도는 CF$_4$, HBr, SF$_{6}$ gas 유량이 10 sccm, 30 sccm, 10 sccm에서 가장 높게 나타났으며, rms roughness 값은 CF$_4$, HBr, SF$_{6}$ gas 유량이 30 sccm, 10 sccm, 30 sccm에서 가장 낮은 표면 조도를 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.448-448
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• 2010

Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

• Restorative Dentistry and Endodontics
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• 제25권2호
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• pp.243-253
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• 2000

The purpose of this in vitro study was to evaluate dentin bonding by two different dentin bonding systems(DBS) using acetone based primer or adhesive [All Bond 2(AB2), One Step(OS)] when they were applied by wet or dry bonding technique. Morphology of resin-dentin interface and hybrid layer thickness(HLT) were investigated using Confocal Laser Scanning Microscope(CLSM) and compared to shear bond strength(SBS). 72 extracted sound human molars were randomly divided into 4 groups of 18 teeth each - Group 1.(AW); AB2 by wet bonding. Group 2(AD); AB2 by dry bonding. Group 3.(OW); OS by wet bonding, Group 4.(OD); OS by dry bonding. In 6 teeth of each group, notch-shaped class V cavities(depth 2mm) were prepared on buccal and lingual surface at the cementoenamel juction(12 cavities per group). To obtain color contrast in CLSM observation, bonding resins of each DBS were mixed with rhodamine B and primer of AB2 was mixed with sodium fluorescein. Prepared teeth of each group were treated with AB2, OS, respectively according to the manufacturer's instructions except for dentin surface moisture treatment after acid etching. In group 1 and 3, after acid etching, excess water was removed with wet tissue(Kimwipes), leaving consistently shiny, visibly hydrated dentin surface. In group 2 and 4, dentin surface was dried for 10 seconds at 1 inch distance. The treated teeth were then packed with composite resin(${\AE}$litefil) and light-cured. 12 microscopic samples($60{\sim}80{\mu}m$ thickness) of each group were obtained after longitudinal section and grinding(Exakt cutting and grinding system). Morphological investigation of resin-dentin interface and HLT measurement using CLSM were done. For measurement of SBS, remaining 12 teeth of each group were flattened occlusally to remove all enamel and grinded to 500 grit SiC(Pedemet Specimen Preparation Equipment). After applying DBS on the exposed dentin surface, composite resin was applied in the shape of cylinder, which has 5mm diameter, 1.5mm thickness, and light cured. SBS was measured using Instron with a crosshead speed of 0.5mm/min. It was concluded as follows, 1. HLT of AW(mean: $2.59{\mu}m$) was thicker than any other group, and followed by AD, OW, OD in descending order(mean; 2.37, 2.28, $1.92{\mu}m$). Only OD had statistically significant differences(p<0.05) to AW and AD. 2. There were intimate contact of resin and dentin at the interface in wet bonding groups, but gaps or irregular interfaces were observed in dry bonding groups. 3. The length, diameter, density of resin tags were various even in the same group without significant differences between groups and lots of adhesive lateral branches were observed. 4. There were no statistically significant difference of SBS between AB2 and OS, but SBS of wet bonding groups were significantly higher(p<0.05) than dry bonding groups. 5. There were no consistent relationships between HLT and SBS.

• Restorative Dentistry and Endodontics
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• 제37권3호
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• pp.155-159
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• 2012

Objectives: To investigate the effect of dentin moisture degree and air-drying time on dentin-bond strength of two different one-step self-etching adhesive systems. Materials and Methods: Twenty-four human third molars were used for microtensile bond strength testing of G-Bond and Clearfil $S^3$ Bond. The dentin surface was either blot-dried or air-dried before applying these adhesive agents. After application of the adhesive agent, three different air drying times were evaluated: 1, 5, and 10 sec. Composite resin was build up to 4 mm thickness and light cured for 40 sec with 2 separate layers. Then the tooth was sectioned and trimmed to measure the microtensile bond strength using a universal testing machine. The measured bond strengths were analyzed with three-way ANOVA and regression analysis was done (p = 0.05). Results: All three factors, materials, dentin wetness and air drying time, showed significant effect on the microtensile bond strength. Clearfil $S^3$ Bond, dry dentin surface and 10 sec air drying time showed higher bond strength. Conclusions: Within the limitation of this experiment, air drying time after the application of the one-step self-etching adhesive agent was the most significant factor affecting the bond strength, followed by the material difference and dentin moisture before applying the adhesive agent.

• Transactions on Electrical and Electronic Materials
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• 제14권4호
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• pp.216-220
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• 2013

The etching characteristics of indium zinc oxide (IZO) in $Cl_2/Ar$ plasma were investigated, including the etch rate and selectivity of IZO. The IZO etch rate showed non-monotonic behavior with increasing $Cl_2$ fraction in the $Cl_2/Ar$ plasma, and with increasing source power, bias power, and process pressure. In the $Cl_2/Ar$ (75:25%) gas mixture, a maximum IZO etch rate of 87.6 nm/min and etch selectivity of 1.09 for IZO to $SiO_2$ were obtained. Owing to the relatively low volatility of the by-products formation, ion bombardment was required, in addition to physical sputtering, to obtain high IZO etch rates. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. These data suggested that the IZO etch mechanism was ion-enhanced chemical etching.