• Title/Summary/Keyword: drain layer

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Performance and SILC Characteristics of Flash Memory Cell With Ultra thin $N_2O$ Annealed Tunneling Oxide (초박막의 $N_2O$ 어닐링한 터널링 산화막을 갖는 Flash Memory Cell의 SILC 특성 및 성능)

  • Son, Jong-Hyoung;Chong, Jong-Wha
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.10
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    • pp.1-8
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    • 1999
  • In this paper, we have studies the transport mechanism and origin of SILC for the various thickness of wet oxide. Also, SILC characteristics of $N_2O$ annealed oxide was included in this study. We made the flash memory cell with $N_2O$ annealed oxide of 60Athick under $0.25{\mu}m$ design rule, and measured the characteristics of the cell. As a result, we have found that the origin of SILC is due to the trap formed inside of the oxide layer by electrical stress. And we reached the conclusion that the transport mechanism of SILC is ruled by the modified F-N tunneling if the electric field is lower than 8MV/cm or typical F-N tunneling if the electric field is higher than 8MV/cm. We could also confirm the fact that $N_2O$ annealed oxide of 60Athick have an improved resistance effect against SILC. In case that we apply $N_2O$ annealed oxide of 60Athick to the flash memory, we could confirm $10^6$ times endurance and more than 10 years drain disturb, and could get 8V programmable flash memory characteristics.

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Reduction of gate leakage current for AlGaN/GaN HEMT by ${N_2}O$ plasma (${N_2}O$ 플라즈마에 의한 AlGaN/GaN HEMT의 누설전류 감소)

  • Yang, Jeon-Wook
    • Journal of IKEEE
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    • v.11 no.4
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    • pp.152-157
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    • 2007
  • AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated and the effect of ${N_2}O$ plasma on the electrical characteristics of the devices was investigated. The HEMT exposed to ${N_2}O$ plasma formed by 40 W of RF power in a chamber with pressure of 20 mTorr at a temperature of $200^{\circ}C$, exhibited a reduction of gate leakage current from 246 nA to 1.2 pA by 10 seconds treatment. The current between the two isolated active regions reduced from 3 uA to 7 nA and the sheet resistance of the active layer was lowered also. The variations of electrical characteristics for HEMT were occurred within a short time expose of 10 seconds and the successive expose did not influence on the improvements of gate leakage characteristics and conductivity of the active region. The reduced leakage current level was not varied by successive $SiO_2$ deposition and its removal. The transconductnace and drain current of AlGaN/GaN HEMTs were increased also by the expose to the ${N_2}O$ plasma.

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Studies on the Fabrication of 0.2 ${\mu}m$Wide-Head T-Gate PHEMT′s (0.2 ${\mu}m$ Wide-Head T-Gate PHEMT 제작에 관한 연구)

  • Jeon, Byeong-Cheol;Yun, Yong-Sun;Park, Hyeon-Chang;Park, Hyeong-Mu;Lee, Jin-Gu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.1
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    • pp.18-24
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    • 2002
  • n this paper, we have fabricated pseudomorphic high electron mobility transistors (PHEMT) with a 0.2 ${\mu}{\textrm}{m}$ wide-head T-shaped gate using electron beam lithography by a dose split method. To make the T-shape gate with gate length of 0.2 ${\mu}{\textrm}{m}$ and gate head size of 1.3 ${\mu}{\textrm}{m}$ we have used triple layer resist structure of PMMA/P(MMA-MAA)/PMMA. The DC characteristics of PHEMT, which has 0.2 ${\mu}{\textrm}{m}$ of gate length, 80 ${\mu}{\textrm}{m}$ of unit gate width and 4 gate fingers, are drain current density of 323 ㎃/mm and maximum transconductance 232 mS/mm at $V_{gs}$ = -1.2V and $V_{ds}$ = 3V. The RF characteristics of the same device are 2.91㏈ of S21 gain and 11.42㏈ of MAG at 40GHz. The current gain cut-off frequency is 63GHz and maximum oscillation frequency is 150GHz, respectively.ively.

Characteristics of MHEMT Devices Having T-Shaped Gate Structure for W-Band MMIC (W-Band MMIC를 위한 T-형태 게이트 구조를 갖는 MHMET 소자 특성)

  • Lee, Jong-Min;Min, Byoung-Gue;Chang, Sung-Jae;Chang, Woo-Jin;Yoon, Hyung Sup;Jung, Hyun-Wook;Kim, Seong-Il;Kang, Dong Min;Kim, Wansik;Jung, Jooyong;Kim, Jongpil;Seo, Mihui;Kim, Sosu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.2
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    • pp.99-104
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    • 2020
  • In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

An Analysis of the Effect of PBD Discharge Capacity to Leave Period (방치기간에 따른 PBD의 통수능 효과 분석)

  • Lee, Keeyong;Park, Minchul;Jeong, Sangguk;Lee, Song
    • Journal of the Korean GEO-environmental Society
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    • v.12 no.10
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    • pp.39-49
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    • 2011
  • Recently PBD method, one of acceleration of consolidation methods is used in the soft ground to shorten consolidation time for fast settlement during construction. It is economical and easy to work. Discharge capacity of PBD is sensitive in proportion to thickness of soft ground layer, and drainage of PBD declines due to disturbance effect in surrounding ground by mandrel used for vertical drainage setting and setting machines and type. Also, deviation of discharge capacity is large according to ground condition, construction condition and soil properties. In addition, when embankment loading is not conducted instantly after PBD setting due to rain or lack of embankment material supply, it causes leaving period problems. But cause and analysis of those problems for discharge capacity is lack. So, in this test, ground improvement and discharge capacity is investigated by implementing composite discharge capacity test for analysis of an effect factor of PBD discharge capacity with leaving period. After fixing the vertical drain on a cylindrical cylinder, put churned sample into the cylinder. Then leave 0day, 30day, 60day and 90day. And then, load following the loading step of 30, 70 and 120kPa using a pressure device. As a result, the longer leaving period, discharge capacity is reduced. It is caused by a decrease of discharge area caused by creep transformation moisture absorption of PBD filter after long leaving period.

Performance of Pentacene-based Thin-film Transistors Fabricated at Different Deposition Rates (증착 속도에 따른 펜타센 박막 트랜지스터의 성능 연구)

  • Hwang, Jinho;Kim, Duri;Kim, Meenwoo;Lee, Hanju;Babajanyan, Arsen;Odabashyan, Levon;Baghdasaryan, Zhirayr;Lee, Kiejin;Cha, Deokjoon
    • New Physics: Sae Mulli
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    • v.68 no.11
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    • pp.1192-1195
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    • 2018
  • We studied the electrical properties of organic thin-film transistors (OTFTs) fabricated at different deposition rates by measuring the field-effect mobility and the threshold voltages. As the active layer, pentacene thin film with a thickness of 50 nm was deposited at a rate of $0.05{\AA}/s$ to $1.14{\AA}/s$. The thickness of the drain-source gold electrode was 50 nm. The mobility was $1.9{\times}10^{-1}cm^2/V{\cdot}s$ at a deposition rate of $0.05{\AA}/s$, the mobility increased to $5.2{\times}10^{-1}cm^2/V{\cdot}s$ when the deposition rate was increased to $0.4{\AA}/s$, and then the mobility decreased to $6.5{\times}10^{-1}cm^2/V{\cdot}s$ when the deposition rate decreased to $1.14{\AA}/s$. Thus, the mobility of pentacene OTFTs was observed to depend on the thermal deposition rate.

Division of Soil Properties in Reclaimed Land of the Mangyeong and Dongjin River Basin and Their Agricultural Engineering Management (만경강과 동진강 유역 간척농경지 토양특성 구분과 농공학적 관리 대책)

  • Hwang, Seon-Woong;Kang, Jong-Gook;Lee, Kyung-Do;Lee, Kyung-Bo;Park, Ki-Hun;Chung, Doug-Young
    • Korean Journal of Soil Science and Fertilizer
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    • v.45 no.3
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    • pp.444-450
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    • 2012
  • The physical and chemical properties of soil in the Mangyeong and Dongjin river basin had been investigated in order to establish the most optimum soil improvement plan on the reclaimed land. The total soil area by reclamation in Saemangeum basin is 113,971 ha. The classification by the distribution of soil series and soil texture is as following. 13 soil series including Chonnam, Buyong and Chonbuk series are period-unknown areas. Regarding the soil texture, they are fine silty ~ clayey very fine. From 1920s to 1960s, Mangyeong, Gwanghwal and Chonbuk series had coarse silty textured soil. After the 1970s, Mangyeong, Gwanghwal, Munpo, Yeompo, Poseung, Gapo and Hasa series have more sandy soil ~ moderately coarse loamy textured soil. Regarding the chemical properties, the concentrations of EC, Exch. $K^+$, $Mg^{2+}$, $Na^+$ and pH are high regardless of the time of reclamation. On the other hand, organic matter (OM) of top soil were 3.3~16.1 g $kg^{-1}$. The organic matter contents were very low though the soil had been farmed for a long time. Furthermore, the deep soil had almost no organic matter with 5.6~1.1 g $kg^{-1}$. The reason is believed that there had not been any movement of OM and clay because pressure or induced pans had been formed by large agricultural machineries and poor vertical drain. Regarding the forming of illuvial horizon (B layer) which tells the development extent of soil, only in the Hwapo reclaimed area where rice had been cultivated for past 90 years, Fe and Mn from top soil are deposited at underground 20~30 cm with 7~8 cm thickness by the movement of clay. It is believed that it had been possible because the earthiness is silty clay loam soil with relatively high content of clay. The soils are soil with concern of damage from sea water, soil on flimsy ground and sandy soil. Therefore, soil improvement for stable crop production can be expected; if the water table would be lowered by subsurface drainage, the water permeability would be enhanced by gypsum and organic matter, and the sandy soil would be replaced by red soil with high content of clay.

Recent Progress in Air-Conditioning and Refrigeration Research : A Review of Papers Published in the Korean Journal of Air-Conditioning and Refrigeration Engineering in 2013 (설비공학 분야의 최근 연구 동향 : 2013년 학회지 논문에 대한 종합적 고찰)

  • Lee, Dae-Young;Kim, Sa Ryang;Kim, Hyun-Jung;Kim, Dong-Seon;Park, Jun-Seok;Ihm, Pyeong Chan
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.26 no.12
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    • pp.605-619
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    • 2014
  • This article reviews the papers published in the Korean Journal of Air-Conditioning and Refrigeration Engineering during 2013. It is intended to understand the status of current research in the areas of heating, cooling, ventilation, sanitation, and indoor environments of buildings and plant facilities. Conclusions are as follows. (1) The research works on the thermal and fluid engineering have been reviewed as groups of fluid machinery, pipes and relative parts including orifices, dampers and ducts, fuel cells and power plants, cooling and air-conditioning, heat and mass transfer, two phase flow, and the flow around buildings and structures. Research issues dealing with home appliances, flows around buildings, nuclear power plant, and manufacturing processes are newly added in thermal and fluid engineering research area. (2) Research works on heat transfer area have been reviewed in the categories of heat transfer characteristics, pool boiling and condensing heat transfer and industrial heat exchangers. Researches on heat transfer characteristics included the results for general analytical model for desiccant wheels, the effects of water absorption on the thermal conductivity of insulation materials, thermal properties of Octadecane/xGnP shape-stabilized phase change materials and $CO_2$ and $CO_2$-Hydrate mixture, effect of ground source heat pump system, the heat flux meter location for the performance test of a refrigerator vacuum insulation panel, a parallel flow evaporator for a heat pump dryer, the condensation risk assessment of vacuum multi-layer glass and triple glass, optimization of a forced convection type PCM refrigeration module, surface temperature sensor using fluorescent nanoporous thin film. In the area of pool boiling and condensing heat transfer, researches on ammonia inside horizontal smooth small tube, R1234yf on various enhanced surfaces, HFC32/HFC152a on a plain surface, spray cooling up to critical heat flux on a low-fin enhanced surface were actively carried out. In the area of industrial heat exchangers, researches on a fin tube type adsorber, the mass-transfer kinetics of a fin-tube-type adsorption bed, fin-and-tube heat exchangers having sine wave fins and oval tubes, louvered fin heat exchanger were performed. (3) In the field of refrigeration, studies are categorized into three groups namely refrigeration cycle, refrigerant and modeling and control. In the category of refrigeration cycle, studies were focused on the enhancement or optimization of experimental or commercial systems including a R410a VRF(Various Refrigerant Flow) heat pump, a R134a 2-stage screw heat pump and a R134a double-heat source automotive air-conditioner system. In the category of refrigerant, studies were carried out for the application of alternative refrigerants or refrigeration technologies including $CO_2$ water heaters, a R1234yf automotive air-conditioner, a R436b water cooler and a thermoelectric refrigerator. In the category of modeling and control, theoretical and experimental studies were carried out to predict the performance of various thermal and control systems including the long-term energy analysis of a geo-thermal heat pump system coupled to cast-in-place energy piles, the dynamic simulation of a water heater-coupled hybrid heat pump and the numerical simulation of an integral optimum regulating controller for a system heat pump. (4) In building mechanical system research fields, twenty one studies were conducted to achieve effective design of the mechanical systems, and also to maximize the energy efficiency of buildings. The topics of the studies included heating and cooling, HVAC system, ventilation, and renewable energies in the buildings. Proposed designs, performance tests using numerical methods and experiments provide useful information and key data which can improve the energy efficiency of the buildings. (5) The field of architectural environment is mostly focused on indoor environment and building energy. The main researches of indoor environment are related to infiltration, ventilation, leak flow and airtightness performance in residential building. The subjects of building energy are worked on energy saving, operation method and optimum operation of building energy systems. The remained studies are related to the special facility such as cleanroom, internet data center and biosafety laboratory. water supply and drain system, defining standard input variables of BIM (Building Information Modeling) for facility management system, estimating capability and providing operation guidelines of subway station as shelter for refuge and evaluation of pollutant emissions from furniture-like products.

Characteristics of Si Floating Gate Nonvolatile Memory Based on Schottky Barrier Tunneling Transistor (쇼트키 장벽 관통 트랜지스터 구조를 적용한 실리콘 나노점 부유 게이트 비휘발성 메모리 특성)

  • Son, Dae-Ho;Kim, Eun-Kyeom;Kim, Jeong-Ho;Lee, Kyung-Su;Yim, Tae-Kyung;An, Seung-Man;Won, Sung-Hwan;Sok, Jung-Hyun;Hong, Wan-Shick;Kim, Tae-You;Jang, Moon-Gyu;Park, Kyoung-Wan
    • Journal of the Korean Vacuum Society
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    • v.18 no.4
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    • pp.302-309
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    • 2009
  • We fabricated a Si nano floating gate memory with Schottky barrier tunneling transistor structure. The device was consisted of Schottky barriers of Er-silicide at source/drain and Si nanoclusters in the gate stack formed by LPCVD-digital gas feeding method. Transistor operations due to the Schottky barrier tunneling were observed under small gate bias < 2V. The nonvolatile memory properties were investigated by measuring the threshold voltage shift along the gate bias voltage and time. We obtained the 10/50 mseconds for write/erase times and the memory window of $\sim5V$ under ${\pm}20\;V$ write/erase voltages. However, the memory window decreased to 0.4V after 104seconds, which was attributed to the Er-related defects in the tunneling oxide layer. Good write/erase endurance was maintained until $10^3$ write/erase times. However, the threshold voltages moved upward, and the memory window became small after more write/erase operations. Defects in the LPCVD control oxide were discussed for the endurance results. The experimental results point to the possibility of a Si nano floating gate memory with Schottky barrier tunneling transistor structure for Si nanoscale nonvolatile memory device.

A Study on the Construction method of Stamped earthen wall (판축토성(版築土城) 축조기법(築造技法)의 이해(理解) - 풍납토성(風納土城) 축조기술(築造技術)을 중심(中心)으로 -)

  • Shin, Hee-kweon
    • Korean Journal of Heritage: History & Science
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    • v.47 no.1
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    • pp.102-115
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    • 2014
  • The stamped earth method is a typical ancient engineering technique which consists of in-filling wooden frame with layers of stamped earth or sand. This method has been universally used to construct earthen walls and buildings, etc. The purpose of this article is to understand the construction method and principles of the stamped earthen wall through analysis of various construction techniques of Pungnaptoseong Fortress(Earthen Fortification in Pungnap-dong). First of all, the ground was leveled and the foundations for the construction of the earthen wall were laid. The underground foundation of the earthen walls was usually constructed by digging into the ground and then in-filling this space with layers of mud clay. Occasionally wooden posts or paving stones which may have been used to reinforce the soft ground were driven in. The method of adding layers of stamped earth at an oblique angle to either side of a central wall is the most characteristic feature of Pungnaptoseong Fortress. Even though the traces of fixing posts, boards, and the hardening of earth - all signatures of the stamped earth technique - have not been identified, evidence of a wooden frame has been found. It has also been observed that this section was constructed by including layers of mud clay and organic remains such as leaves and twigs in order to strengthen the adhesiveness of the structures. The outer part of the central wall was constructed by the anti-slope stamped earth technique to protect central wall. In addition a final layer of paved stones was added to the upper part of the wall. These stone layers and the stone wall were constructed in order to prevent the loss of the earthen wall and to discharge and drain water. Meanwhile, the technique of cementing with fire was used to control damp and remove water in stamped earth. It can not be said at present that the stamped earth method has been confirmed as the typical construction method of Korean ancient earthen walls. If we make a comparative study of the evidence of the stamped earth technique at Pungnaptoseong Fortress with other archeological sites, progress will be made in the investigation of the construction method and principles of stamped earthen wall.