• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.2-110.2
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• 2012

We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• Proceedings of the KSR Conference
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• 2006.11b
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• pp.1380-1384
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• 2006

Sediments deposited on lateral drain pipes in a tunnel make lateral porous pipes clogged. Since the safety of the tunnel can be affected by this phenomenon, it requires a regular maintenance of the lateral drain pipes. In this study, a series of centrifugal tests were conducted in order to find out the method which can reduce the clogging effect considerably. Four different types of tunnel drain configurations were selected in the experiments. By analysis of sediments for each configuration, the optimum drain configuration that can minimize sedimentation of cement constituents was investigated. As a results, the existing drain configuration which uses filter concrete appear to produce much sediments. In contrast, the new drain configuration appears to be able to reduce sedimentation ratio up to almost 50% comparing with the existing one. From these observations, it may be concluded that the new drain configuration, in which the lateral porous pipes of a tunnel are surrounded by gravel layer and non-woven geotextile, has high efficiency in maintenance.

• Journal of Korean Society of Rural Planning
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• v.30 no.2
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• pp.69-77
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• 2024

As impervious area increases due to urbanization, rainfall on the impervious area does not infiltrate into the ground, and stormwater drains quickly. Low impact development (LID) practices have been suggested as alternatives to infiltrate and store water in soil layers. The practices in South Korea is applied to urban development projects, urban renewal projects, urban regeneration projects, etc., it is required to perform literature research, watershed survey, soil quality, etc. for the LID practices implementation. Prior to the LID implementation at fields, there is a need to simulate its' effect on watershed hydrology, and Storm Water Management Model (SWMM) provides an opportunity to simulate LID practices. The LIDs applied in South Korea are infiltration-based practices, vegetation-based practices, rainwater-harvesting practices, etc. Vegetation-based practices includes bio-retention cell and rain garden, bio-retention cells are mostly employed in the model, adjusting the model parameters to simulate various practices. The bio-retention cell requires inputs regarding surface layer, soil layer, and drain layer, but the inputs for the drain layer are applied without sufficient examination, while the model parameters or inputs are somewhat influential to the practice effects. Thus, the approach to simulate vegetation-based LID practices in SWMM uses was explored and suggested for better LID simulation in South Korea.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.6
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• pp.1123-1127
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• 2009

This paper expands the scope of application of the thin film transistor (TFT) in which it is used as the switching element by making the amorphous silicon TFT with the non-volatile memory device,. It is the thing about the amorphous silicon non-volatile memory device which is suitable to an enlargement and in which this uses the additionally cheap substrate according to the amorphous silicon use. As to, the amorphous silicon TFT non-volatile memory device is comprised of the glass substrates and the gate, which evaporates on the glass substrates and in which it patterns the first insulation layer, in which it charges the gate the floating gate which evaporates on the first insulation layer and in which it patterns and the second insulation layer in which it charges the floating gate, and the active layer, in which it evaporates the amorphous silicon on the second insulation layer the source / drain layer which evaporates the n+ amorphous silicon on the active layer and in which it patterns and the source / drain layer electrode in which it evaporates on the source / drain layer.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.29-32
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• 2002

This paper describes a novel structure of NMOSFET with elevated SiGe source/drain region and ultra-shallow source/drain extension(SDE)region. A new ultra-shallow junction formation technology. Which is based on damage-free process for rcplacing of low energy ion implantation, is realized using ultra-high vacuum chemical vapor deposition(UHVCVD) and excimer laser annealing(ELA).

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.335-340
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• 2013

This paper is for the simulation design to enhance the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess and channel structures has been simulated and analyzed for the breakdown of the MHEMT devices. The fully removed recess structure at the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to almost 4 V as the saturation current at gate voltage of 0 V is reduced from 90 mA to 60 mA at drain voltage of 2 V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier and the $Si_3N_4$ passivation layers deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer and thus the impact ionization in the channel become smaller. In addition, the replaced InGaAs/InP composite channel with the same thickness in the same asymmetrically recessed structure increases the breakdown voltage to 5 V due to the smaller impact ionization and mobility of the InP layer at high drain voltage.

• Geotechnical Engineering
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• v.3 no.1
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• pp.7-24
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• 1987

Preloading surcharge method along with vertical drains was adopted to improve the performance of a very soft marine clay deposit. The onshore deposit, located in the Ulsan Bay area, consists of a 2 to 10m thick, very soft, highly compressible marine clay layer developed just below. the sea water level. The initial undrained shear strength of the clay layer was about 0.6 ton/m2. But, the deposit was designed after treatment to support some auxiliary facilities for a new ilo refinery plant, requiring bearing capacities of 3.6 to 5.4 ton/m2 and maximum allowablee settlement of less than 7.5cm. A total of 35, 000 wick drains Ivas installed to expedite drainage during preloading, and surcharge loads of up to 5m above the original ground level were applied in a step-by-step loading sequence to prevent ground failure by excess surcharge loads. An extensive program of field instrumentation was implemented to monitor the behavior of the clay deposit. Measurers!ends included settlements, excess pore pressure and its dissipation, ground farmer level fluctuation, and lateral movement of the so(t clay layer under the preloads. This paper describes the design concepts, construction methods and control procedures used for improvement of the clay layer. It also presents the ground behavior measured during construction, rind comparisons with theoretical predictions.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.4 no.1
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• pp.16-23
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• 2001

This study was conducted to analyse the relation between physical characteristics of soil surface and wild plants occurrence. Lots of natural occurrence on loamy soil and a little of natural occurrence on perlite. Those were used to observe the wild plants occurrence through the duration. Natural occurrence of wild plants were observed on uniform sand, perlite, loamy soil and 2cms loamy soil layer above the perlite. Uniform sand was compared with different height of drain ditch. The results of analysis were as followed. 1. Wild plants germinated on the uniform perlite layer, they did not grow larger. Because water in large pores of perlite surface drained rapidly and evaporated easily, therefore surface remained low moisture contents. 2. A lot of weed grew on 2cms loamy layer on perlite which stratified above the perlite layer. Because perlite had plenty of soil moisture and soil moisture moved easily from perlite to loamy soil layer. 3. Uniform loamy soil had similar occurrence on the uniform perlite. It was nearly same at surface moisture distribution but lower than layered loamy soil on perlite, and the vertical distributions at soil moisture was totally lower than 2cms loamy soil layer on perlite. 4. Wild plants were grew on uniform sand on different height of drain ditch. In this case, much more wild plants were grew on which had more higher drainage ditch. The number of wild plants occurred when it was affected by soil surface moisture, drain ditch and natural occurrence of wild plants. This could be controlled by layered soil at surface moisture. Therefore weed occurrence can control in planting ground, where soil layer would not be disturbed.