• Title/Summary/Keyword: double texturing

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Fiber Laser를 이용한 다결정 태양전지 Surface Texturing

  • Kim, Tae-Hun;Kim, Seon-Yong;Go, Ji-Su;Park, Hong-Jin;Kim, Gwang-Yeol;Choe, Byeong-Deok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.270-270
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    • 2009
  • The surface texturing technology is one of the methods to improve the efficiency of crystalline silicon solar cell. This process reduced the reflectance at the surface by the so-called double bounce effect and increased the light trapping. Among these surface texturing technology, the laser texturing is effective for multi-crystalline silicon solar cells which have random crystallographic directions. We investigated the characteristics of laser processing on the surface of the multi-crystalline silicon solar cells using the fiber laser.

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Investigation of Wet Chemical Etching for Surface Texturing of Multi-crystalline Silicon Wafers (다결정 실리콘 웨이퍼의 표면 텍스쳐링을 위한 습식 화학 식각에 대한 연구)

  • Kim, Bum-Ho;Lee, Hyun-Woo;Lee, Eun-Joo;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.19-20
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    • 2006
  • Two methods that can reduce reflectance in solar cells are surface texturing and anti-reflection coating. Wet chemical etching is a typical method that surface texturing of multi-crystalline silicon. Wet chemical etching methods are the acid texturization of saw damage on the surface of multi-crystalline silicon or double-step chemical etching after KOH saw damage removal too. These methods of surface texturing are realized by chemical etching in acid solutions HF-$HNO_3$-$H_2O$. In this solutions we can reduce reflectance spectra by simple process etching of multi-crystalline silicon surface. We have obtained reflectance of 27.19% m 400~1100nm from acidic chemical etching after KOH saw damage removal. This result is about 7% less than just saw damage removal substrate. The surface morphology observed by microscope and scanning electron microscopy (SEM).

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The Single-Side Textured Crystalline Silicon Solar Cell Using Dielectric Coating Layer (절연막을 이용한 단면 표면조직화 결정질 실리콘 태양전지)

  • Do, Kyeom-Seon;Park, Seok-Gi;Myoung, Jae-Min;Yu, Gwon-Jong;Song, Hee-Eun
    • 한국태양에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.245-248
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    • 2011
  • Many researches have been carried out to improve light absorption in the crystalline silicon solar cell fabrication. The rear reflection is applied to increase the path length of light, resulting in the light absorption enhancement and thus the efficiency improvement mainly due to increase in short circuit current. In this paper, we manufactured the silicon solar cell using the mono crystalline silicon wafers with $156{\times}156mm^2$, 0.5~3.0 ${\Omega}{\cdot}cm$ of resistivity and p-type. After saw damage removal, the dielectric film ($SiN_x$)on the back surface was deposited, followed by surface texturing in the KOH solution. It resulted in single-side texturing wafer. Then the dielectric film was removed in the HF solution. The silicon wafers were doped with phosphorus by $POCl_3$ with the sheet resistance 50 ${\Omega}/{\Box}$ and then the silicon nitride was deposited on the front surface by the PECVD with 80nm thickness. The electrodes were formed by screen-printing with Ag and Al paste for front and back surface, respectively. The reflectance and transmittance for the single-sided and double-sided textured wafers were compared. The double-sided textured wafer showed higher reflectance and lower transmittance at the long wavelength region, compared to single-sided. The completed crystalline silicon solar cells with different back surface texture showed the conversion efficiency of 17.4% for the single sided and 17.3% for the double sided. The efficiency improvement with single-sided textured solar cell resulted from reflectance increase on back surface and light absorption enhancement.

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Characteristics of Double Texturization by Laser and Reactive Ion Etching for Crystalline Silicon Solar Cell (레이저를 이용한 결정질 실리콘 태양전지의 Double Texturing 제조 및 특성)

  • Kwon, Jun-Young;Han, Kyu-Min;Choi, Sung-Jin;Song, Hee-Eun;Yoo, Jin-Soo;Yoo, Kwon-Jong;Kim, Nam-Soo
    • Korean Journal of Materials Research
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    • v.20 no.12
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    • pp.649-653
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    • 2010
  • In this paper, double texturization of multi crystalline silicon solar cells was studied with laser and reactive ion etching (RIE). In the case of multi crystalline silicon wafers, chemical etching has problems in producing a uniform surface texture. Thus various etching methods such as laser and dry texturization have been studied for multi crystalline silicon wafers. In this study, laser texturization with an Nd:$YVO_4$ green laser was performed first to get the proper hole spacing and $300{\mu}m$ was found to be the most proper value. Laser texturization on crystalline silicon wafers was followed by damage removal in acid solution and RIE to achieve double texturization. This study showed that double texturization on multi crystalline silicon wafers with laser firing and RIE resulted in lower reflectance, higher quantum yield and better efficiency than that process without RIE. However, RIE formed sharp structures on the silicon wafer surfaces, which resulted in 0.8% decrease of fill factor at solar cell characterization. While chemical etching makes it difficult to obtain a uniform surface texture for multi crystalline silicon solar cells, the process of double texturization with laser and RIE yields a uniform surface structure, diminished reflectance, and improved efficiency. This finding lays the foundation for the study of low-cost, high efficiency multi crystalline silicon solar cells.

Multi-crystalline Silicon Solar Cell with Reactive Ion Etching Texturization

  • Park, Seok Gi;Kang, Min Gu;Lee, Jeong In;Song, Hee-eun;Chang, Hyo Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.419-419
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    • 2016
  • High efficiency silicon solar cell requires the textured front surface to reduce reflectance and to improve the light trapping. In case of mono-crystalline silicon solar cell, wet etching with alkaline solution is widespread. However, the alkali texturing methods are ineffective in case of multi-crystalline silicon wafer due to grain boundary of random crystallographic orientation. The acid texturing method is generally used in multi-crystalline silicon wafer to reduce the surface reflectance. However the acid textured solar cell gives low short-circuit current due to high reflectivity while it improves the open-circuit voltage. To reduce the reflectivity of multi-crystalline silicon wafer, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE experimental condition with change of RF power (100W, 150W, 200W, 250W, 300W). During experiment, the gas ratio of SF6 and O2 was fixed as 30:10.

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Study on Improving Surface Structure with Changing RF Power Conditions in RIE (reactive ion etching) (반응성 이온 건식식각에서 RF Power 변화에 따른 표면 조직화 개선 연구)

  • Park, Seok-Gi;Lee, Jeong In;Kang, Min Gu;Kang, Gi-Hwan;Song, Hee-eun;Chang, Hyo Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.8
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    • pp.455-460
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    • 2016
  • A textured front surface is required in high efficiency silicon solar cells to reduce reflectance and to improve light trapping. Wet etching with alkaline solution is usually applied for mono crystalline silicon solar cells. However, alkali texturing method is not appropriate for multi-crystalline silicon wafers due to grain boundary of random crystallographic orientation. Accordingly, acid texturing method is generally used for multi-crystalline silicon wafers to reduce the surface reflectance. To reduce reflectivity of multi-crystalline silicon wafers, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE condition by different RF power condition (100, 150, 200, 250, 300 W).

고효율 태양전지를 위한 ICP-RIE기반 결정질 실리콘 표면 Texturing 공정연구

  • Lee, Myeong-Bok;Lee, Byeong-Chan;Park, Gwang-Muk;Jeong, Ji-Hui;Yun, Gyeong-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.315-315
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    • 2010
  • 결정질 실리콘을 포함하는 태양전지의 광전효율은 표면에 입사되는 태양광의 반사를 제외하면 흡수된 광자에 의해 생성되는 전자-정공쌍의 상대적인 비율인 내부양자효율에 의존하게 된다. 실제 생성된 전자-정공쌍은 기판재료의 결정상태와 전기광학적 물성 등에 의해 일부가 재결합되어 2차적인 광자의 생성이나 열로서 작용하고 최종적으로 전자와 정공이 완전히 분리되고 전극에 포집되어 실질적인 유효전류로 작용한다. 16% 이상의 고효율 결정질 실리콘 태양전지양산이 요구되고 있는 현실에서 광전효율 개선 위해 가장 우선적으로 고려되어야 할 변수는 입력 태양광스펙트럼에 대한 결정질 실리콘 표면반사율을 최소화하여 광흡수를 극대화하는 것이라 할 수 있다. 이의 해결을 위하여 대기와 실리콘표면 사이의 굴절률차이가 크면 클수록 태양광스펙트럼에 대한 결정질 실리콘의 광반사는 증가하기 때문에 상대적으로 낮은 굴절률의 $SiO_x$$SiN_x$와 같은 반사방지막을 광입력 실리콘표면에 증착하여 광반사율 저감공정을 적용하고 있다. 이와 더불어 결정질 실리콘표면을 화학적으로 혹은 플라즈마이온으로 50-100nm 직경의 바늘형 피라미드형상으로 texturing 함으로 광자들의 다중반사 등에 기인하는 광흡수율의 증가를 기대할 수 있기 때문에 태양전지효율 개선에 긍정적인 영향을 미치는 것으로 이해된다. 본 실험에서도 고효율 다결정 실리콘 태양전지 양산공정에 적용 가능한 ICP-RIE기반 결정질 실리콘표면에 대한 texturing 공정기술을 연구하였다. Double Langmuir 플라즈마 진단시스템(DLP2000)을 적용하여 사용한 $SF_6$$O_2$ 개스유량과 챔버압력, 플라즈마 파워에 따른 이온밀도, 전자온도, 포화이온전류밀도, 플라즈마포텐셜의 공간분포를 모니터링하였고 texturing이 완료된 시료에 대하여 A1.5G 표준태양광스펙트럼의 300-1100nm 파장대역에서 반사율을 측정하여 그 변화를 관찰하였다. 본 연구에서 얻어진 결과를 간략히 정리하면 Si texturing에 가장 적합한 플라즈마파워는 100W, $SF_6/O_2$ 혼합비는 18:22, 챔버압력은 30mtorr 등이고 이에 상응하는 플라즈마의 이온밀도는 $2{\sim}3{\times}10^8\;ions/cm^3$, 전자온도는 14~15eV, 포화전류밀도는 $0.014{\sim}0.015mA/cm^2$, 플라즈마포텐셜은 38~39V 범위 등이었다. 현재까지 얻어진 최소 평균반사율은 14.2% 였으며 최적의 texturing패턴 플라즈마공정 조건은 이온에 의한 Si표면원자들의 스퍼터링과 화학반응에 의한 증착이 교차하는 플라즈마 에너지 및 밀도 상태인 것으로 해석된다.

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Double Texturing of Glass Substrate and ZnO : Al Transparent Electrode Surfaces for High Performance Thin Film Solar Cells (고성능 박막태양전지를 위한 유리 기판 및 산화 아연 투명 전극의 2중 구조 표면 조직화 공정 연구)

  • Kang, Dong-Won
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.8
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    • pp.1230-1235
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    • 2017
  • We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

A Study on MgF$_2$/CeO$_2$ AR Coating of Mono-Crystalline Silicon Solar Cell (단결정 실리콘 태양전지의 MgF$_2$/CeO$_2$ 반사 방지막에 환한 연구)

  • 유진수;이재형;이준신
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.10
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    • pp.447-450
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    • 2003
  • This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ deposited at 40$0^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4${\mu}{\textrm}{m}$ to 1.1${\mu}{\textrm}{m}$. We achieved the efficiencies of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details on MgF$_2$, CeO$_2$ films, and cell fabrication parameters are presented in this paper.

Machining of Repetitive Micro Patterns using Oscillation Micro Milling (진동 마이크로 밀링을 이용한 미세 반복 패턴 가공 기술 연구)

  • Ro, Seung-Kook;Khim, Gyungho;Park, Jong-Kweon
    • Journal of the Korean Society for Precision Engineering
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    • v.31 no.5
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    • pp.381-387
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    • 2014
  • This paper introduces a system to machine micro-sized patterns effectively on surface based on micro-milling process using tools with simultaneous rotation and oscillation, oscillation micro milling. To review the effectiveness of proposed concept, we integrated a micro-spindle supported by active magnetic bearings with a precision 3-axis air bearing stage using double-wedge mechanism, and tested this oscillation milling. Two types of oscillation milling were tested, which are linear oscillation milling with a flat end mill and elliptical oscillation milling with a ball end mill with 0.3 mm of diameter. The spindle was rotating 110 krpm and workpiece was moving constant speed of 2~8 mm/sec during the oscillation milling. As the results, multiple oval shape dimples were generated in regular spacing, and the variation of elliptical motion made different shapes of patterns. The results showed that proposed oscillation milling can be successfully used for machining repeated micro-patterns.