• Title/Summary/Keyword: dopping

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A Study on the Reaction Kinetics of Nitrogen Compounds over Bimetallic Molybdenum Catalysts (이금속성 형태 몰리브덴 촉매를 이용한 질소화합물의 반응속도 연구)

  • Ahn, Beom-Shu
    • Journal of the Korean Applied Science and Technology
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    • v.22 no.4
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    • pp.349-354
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    • 2005
  • It is interesting to discover the reaction kinetics of the newly developed molybdenum containing catalysts. The dissociation/adsorption of nitrogen on molybdenum surface is known to be structure sensitive, which is similar to that of nitrogen on iron surface. The rates over molybdenum nitride catalysts are increased with the increase of total pressure. This tendency is the same as that for iron catalyst, but is quite different from that for ruthenium catalyst. The activation energies of the molybdenum nitride catalysts are almost on the same level, although the activity is changed by the addition of the second component. The reaction rate is expressed as a function of the concentration of reactants and products. The surface nature of $CO_3Mo_3N$ is drastically changed by the addition of alkali, changing the main adsorbed species from $NH_2$ to NH on the surface. The strength of $NH_x$ adsorption is found to be changed by alkali dopping.

A stable solid state quantum dot sensitized solar cell with p-type CuSCN semiconductor and its dopping effect

  • Kim, Hui-Jin;Seol, Min-Su;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.378-378
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    • 2011
  • 본 연구에서는 ZnO 나노선 기판을 제작하여 그 위에 밴드갭이 낮은 물질인 CdS, CdSe를 증착시킨 후 p-type 반도체 물질인 CuSCN을 증착시켜 안정성이 향상된 양자점 감응형 태양전지를 제작하였다. ZnO 나노선 기판은 투명한 FTO 기판 위에 ZnO를 진공증착시켜 seed layer를 제작하고 그 위에 $10{\mu}m$정도의 길이의 나노와이어를 성장시킨 후, 밴드갭이 낮은 CdS, CdSe 물질과의 다중접합을 이용하여 제작하고, 이러한 나노선 구조위에 chemical solution deposition을 이용하여 ${\beta}$-CuSCN을 형성시켰다. 양자점 감응형 태양전지는 ZnO 나노선을 photoanode로 이용하고 ZnO 나노선은 암모니아수와 아연염을 이용한, 비교적 저온의 수열합성법을 통해 합성하였고, sensitizer로 쓰인 CdS, CdSe 물질은 CBD방식을 통하여 합성된 나노선 위에 in-situ로 접합시켰다. 또한, 기존의 액체전해질을 이용한 양자점 감응형 태양전지의 안정성을 향상시키기 위해 p-type의 반도체 물질인 CuSCN물질을 propyl sulfide를 이용, ${\sim}80^{\circ}C$의 열을 가하여 in-situ 방식으로 다공성 구조에 효율적으로 접합이 가능하도록 deposition하였다. 일반적으로, CuSCN film은 홀 전도체로서의 장점을 지닌 반면, 전도성이 낮은 단점이 있기 때문에 이를 향상시키기 위해서 첨가제를 이용, 농도에 따라서 전도도가 향상되고 셀의 성능이 향상되는 것을 확인하였다. 이와 같이 합성된 구조는 주사전자현미경(SEM), X-선 회절(XRD), 솔라시뮬레이터 등의 분석장비를 이용하여 태양전지로서의 특성을 분석하였다. 또한 안정성 평가를 위하여 시간에 따른 셀의 특성변화도 비교하였다.

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A study on the piezoelectric characteristics of 0.05PAN-0.95PZT ceramics with additive (첨가제에 의한 0.05PAN-0.95PZT계 세라믹의 압전특성에 관한 연구)

  • 김현철;허석현;김진섭;임인호;배선기
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.419-422
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    • 2000
  • This paper was to measure the structure, piezoelectric properties of 0.05Pb($A1_{0.5}$$Nb_{0.5}$)-0.95Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramics dopped with additive after creating the specimens with a general method. It is shown that X-ray diffraction pattern variation of lines (200) have tendency to move in simple peak by addition of additive. According to the increase of $Cr_2$$O_3$, tetragonality hardly have variation, according to the increase of $Fe_2$$O_3$, tetragonality decreased on the whole. According to dopping with $Cr_2$$O_3$ and $Fe_2$$O_3$, electromechanical factor(kp) largely increased, in case of sintering at $1200^{\circ}C$ kp was maximum value of 40.04[%] at $Cr_2$$O_3$ 0.3wt%, and maximum value of kp 42.9 [%] at $Fe_2$$O_3$, 0.9wt%. In case of sintering at 120$0^{\circ}C$, mechanical duality factor(Qm) was maximum value of Qm 268.8 at $Cr_2$$O_3$, 0.9 wt%.

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Volatile Components of Parsley Leaf and Seed (Petroselinum crispum) (파슬리의 잎과 씨의 휘발성 성분)

  • Kim, Young-Hoi;Kim, Kun-Soo;Hong, Chong-Ki
    • Applied Biological Chemistry
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    • v.33 no.1
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    • pp.62-67
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    • 1990
  • The volatile oils of the fresh leaf and seed of parsley(Petroselinum crispum) were isolated by simultaneous steam distillation and extraction procedure. The compositions of the resulting oils were investigated by gas chromatography and gas chromatography-mass spectrometry. The volatile oil contents of leaf and seed were 0.06 % and 3.11 %, respectively. Fifty-eight components including 15 partially characterized components were identified in leaf oil and 23 components in seed oil. Seven of them are suggested as new parsley leaf volatiles. Terpenoids were represented as much as 46.4 % of total leaf volatiles and 49.3 % of total seed volatiles. The leaf volatiles contained a lot of myrcene(3.02%), 4-isopropenyl-1-methyl benzene(4.52%) and p-1,3,8-menthatriene(10. 49 % ), but the seed volatiles were characterized by greater quantities of the isomers, ${\alpha}-pinene$(22.28 %) and ${\beta}-pinene$(16.20 %), although these compounds were contained only trace in leaf volatiles. Of the components identified in both oils, the most abundant component was myristicin, constituting 21.80 % of the leaf volatiles and 47.54 % of the seed volatiles.

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pphotoemission study of rare-earth metal(Eu) on the CdTe(110) surface

  • Kwanghyun-Cho;Oh, J.H.;Chung, J.;K.H.ppark;Oh, S.J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1994.02a
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    • pp.43-43
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    • 1994
  • We studied chemical reactio of Eu metal on the in situ cleaved CdTe(110) surface by pphotoemission sppectroscoppy using synchrotron radiation. The chamber was maintained with base ppressure $\leq$2${\times}$10-10 mb during the expperiment. The expperiment was carried out in pphoton Factory in Jappan. Core level pphotoemission sppectroscoppy was carried out with Al K${\alpha}$ Line. The CdTe simiconductor was determined to be pp-typpe with low dopping concentration from Hall measurement. We found that there are two reacted pphases of Te with Eu (related to divalent Eu and trivalent Eu, resppectively) from least square fitting of Te 4d sppectra, but three is no indication of Cd reaction. Trivalent Eu exists after roughly one monolayer depposition (600 sec. depposition time is considered as one monolayer), which is also observed at Eu 3d core level sppectra. Overlayer Eu is metallized after roughly 2 monolayers depposition, as can be deduced from the fact that metallic edge near Fermi level begins to appear. The intensity of core-level of Te decreases expponentially at the initial stage (near one monolayer) and after one monolayer depposition it decreases more slowly due to Te out-diffusion. We categorized the growth mode of Eu on CdTe as S-K growth mode (cluster formation after one monolayer deppisition) from the relative intensity pplot of Te 4d normalized to the cleaved surface. At cleaved surface band bending is already established due to surface defects. At first 100 sec. depposition time the shift toward lower binding side by 0.6 eV is found at all core level sppectra of all elements in semiconductor. This shift is considered as the re-adjustment of surface Fermi level to the pposition induced by Eu metal (0.2 eV above the valence band maximum).

Effects of Mn-dopping in Orthoferrite $LaFeO_3$ (Orthoferrite $LaFeO_3$에서의 Mn 치환 효과)

  • 채광표;이성환;이성호;이영배
    • Journal of the Korean Magnetics Society
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    • v.10 no.2
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    • pp.81-85
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    • 2000
  • Crystallographic and magnetic properties of the Mn-doped orthoferrite LaFe$_{1-x}$Mn$_{x}$ O$_3$(0.0$\leq$x$\leq$O.4) system have been investigated by means of x-ray diffractometry, M ssbauer spectroscopy, vibrating sample magnetometer and super-conducting quantum interference device. The structure of the system was found to be orthorhombic distorted perovskite structure. At room temperature, the M ssbauer spectra for x=0.0 consists of one Zeeman sextets from Fe$^{3+}$ ions at octahedral sites. The M ssbauer spectra of two Zeeman sextets (x$\leq$0.1) change one Zeeman sextets and a paramagnetic doublet (x=0.4). The saturation magnetization increases but the coercivity decreases with increasing x in LaFe$_{1-x}$Mn$_{x}$ O$_3$.

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Electrochemical Performances of LiMn2O4:Al Synthesized by Solid State Method (고상법으로 합성한 LiMn2O4:Al의 전기화학적 특성)

  • Park, Hye-Jung;Park, Sun-Min;Roh, Gwang-Chul;Han, Cheong-Hwa
    • Journal of the Korean Ceramic Society
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    • v.48 no.6
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    • pp.531-536
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    • 2011
  • Al doped $LiMn_2O_4$ ($LiMn_2O_4:Al$) synthesized by several Al doping process and Solid State method. The Al contents in $Mn_{1-x}Al_xO_2$ for $LiMn_2O_4:Al$ were analyzed 1.7 wt% by EDS. The $LiMn_2O_4:Al$ confirmed cubic spinel structure and approximately 5 ${\mu}m$ particles regardless of three kinds of doping process by solid state method. In the result of electrochemical performances, initial discharge capacity had 115 mAh/g in case of $LiMn_2O_4$ and 111 mAh/g of $LiMn_2O_4:Al$ after 100th cycle at room temperature. But the capacity retention results showed that $LiMn_2O_4$ and $LiMn_2O_4:Al$ were 44% and 69% respectively in the 100th cycle at 60$^{\circ}C$. Therefore we are confirmed that $LiMn_2O_4:Al$ increased the capacity retention about 25% than $LiMn_2O_4$, thus the effect of Al dopping on $LiMn_2O_4$ capacity retention.

Synthesis of Metal Doped ZnO Nanoclusters by Microwave Assisted Polyol Process (마이크로웨이브 폴리올 공정에서 금속 도핑 산화아연 나노클러스터의 합성)

  • Kwon, Oh-San;Kang, Kuk-Hyoun;Lee, Dong-Kyu
    • Journal of the Korean Applied Science and Technology
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    • v.31 no.3
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    • pp.525-533
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    • 2014
  • ZnO has attracted much attention such as photocatalysts, sensors, piezoelectricity and etc. At present, an economical and rapid synthesis route based on the efficient microwave polyol process is used to synthesized metal-doped ZnO nanoclusters. Diethylene glycol has a property of high polarizability, and is an excellent microwave absorbing agent, thus leading to a high heating rate and a significantly shorter reaction time. In this study, metal-doped ZnO nanoclusters are obtained with different seed volumes, when zinc acetate dihydrate is used as a precursor, and metal acetate hydrate is used as a doped-metal and diethylene glycol is used as a solvent. The obtained metal-doped ZnO nanoclusters were characterized by FE-SEM, XRD, Raman and PSA.

A Review on Safety of Herbal Medicines for Doping (한약의 도핑 안전성에 대한 고찰)

  • Kim, Ju-ran;Yun, Sung Joong;Lee, Yun Kyu;Lee, Hyun-Jong;Kim, Jae Soo
    • The Journal of Korean Medicine
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    • v.40 no.3
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    • pp.139-176
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    • 2019
  • Objectives: This study aims to review the herbal medicines containing substances banned by World Anti-Doping Agency(WADA), and to consider criteria for the using of herbal medicines. Methods: Using foreign(Pubmed, Cochrane, Embase, Google Scholar, WANFANG, CiNii) and domestic databases (NDSL, OASIS, RISS), we analyzed the content and pharmacokinetics of the prohibited substances in herbal medicines. Results: Herbal medicines containing the prohibited substances proposed in Korea, China, and Japan are Ephedrae Herba, Cannabis Semen, Strychni Semen, Strychni Ignatii Semen, Pinelliae Tuber, Rhizoma Pinelliae, Chelidonii Herba, Papaveris Fructus Deseminatus, Liriopis Tuber, Rehmanniae Radix Recens, Cistanchis Herba, Ponciri Fructus Immaturus, Aurantii Fructus Immaturus, Moschus, Testudinis Plastrum, Otariae Testis et Penis, and Hominis Placenta. Of these, when using Ephedrae Herba, Cannabis Semen, Strychni Semen, Moschus, Strychni Ignatii Semen, and Otariae Testis et Penis, caution is needed in relation to the doping test. Other herbal medicines are considered safe for the doping test. In addition, by analyzing data related to higenamine added to the WADA's prohibited list of doping since 2017, we don't recommend using Nelumbinis Plumula. And in the case of the other herbal medicines containing higenamine, it is considered that care should be taken in doping test depending on the amount of usage. Conclusions: As a result of analyzing the herbal medicines which are in prohibited list about doping, we were able to know the criteria and precautions to use when prescribing the herbal medicines. Further research will be needed about common used herbal medicines and the amount of detection depending on extraction and boiling method.

Growth of p-type ZnSe/GaAs epilayers by Rf reactive sputtering and Its characteristics (고주파 반응성 스퍼터링에 의한 p형 ZnSe/GaAs 박막성장 및 특성연구)

  • 유평렬;정태수;신영진
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.1
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    • pp.107-112
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    • 1999
  • The ZnSe/GaAs epilayers were grown by RF reactive sputtering. In order to obtain the optimum condition of the growth, we have studied the dependence of Ar pressure, input power of sputter, temperature of substrate, and the distande between substrate and target. Through the observation of the grown epilayer via electronic microscope, we confirmed that the layer's surface was uniform and the boundary of the substrate and the layer was well defined. The defotmation of lattice distortion and the distortion ratio were obtained by DCRC measurements. From mrasurements of photoluminescence, in the ZnSe/GaAs sample without injection of $N_2$gas, we found that the intensity of bound exciton $I_2$is stronger than that of $I_1$and the bound exiton $I_1$represents the deep acceptor level, $I_1\;^d$. On the other hand, in the ZnSe/GaAs sample with injection of$N_2$gas, the peak of$I_1$ was much higher than that of the $I_2$and the half width appeared to be narrow. We concluded that the p-type of ZnSe/GaAs epilayer was grown successfully, because of stronger peak of the bound exciton $I_1$due to the $N_2$dopping.

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