• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.344-345
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• 2015

Various concentration of copper was dopped in Fe-35%Ni thin sheet by electroforming and their electromagnetic, surface properties were determined. Microstructure observation by scanning electron microscopy revealed that the thin sheet had columnar grains with about 150 nm long. Phase analysis by X-ray diffractometry revealed that the alloy thin sheets were fine crystalline. The average surface roughnesses measured by atomic force microscopy (AFM) were about 14.38 nm. Nano hardnesses determined by tribo-nano indenter were 4.13 GPa. The surface resistances were 2.28 ohm/sq. The maximum magnetization, residual magnetization and coercive force depended on the copper concentration.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.671-677
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• 1993

Effects of PbTiO3 addition on dielectric properties and extent of PbO loss in Nd-doped Pb(Mg1/3Nb2/3)O3 system were investigated. As the proportion of dopping increased, the phase transition temperature shifted to low region, and the dielectric constant at room temperature decreased rapidly. But as the proportion of PbTiO3 increased, the phase transition temperature shifted to high retion, and the dielectric constant at room temperature increased. The substitution of Nd3+ for Pb2+ decreased the amount of PbO evaporation, therefore the sample sintered well in case of only 1 mole% adding excess PbO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.677-680
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• 1999

Rapid developing automation technology enhances the need of sensors. Among many materials, silicon has the advantages of electrical and mechanical property, Single-crystalline silicon has different piezoresistivity on 야fferent directions and a current leakage at elevated temperature, but poly-crystalline silicon has the possibility of controling resistivity using dopping ions, and operation at high temperature, which is grown on insulating layers. Each wafer has slightly different thicknesses that make difficult to obtain the precisely same thickness of a diaphragm. This paper deals with the fabrication process to make poly-crystalline silicon based pressure sensors which includes diaphragm thickness and wet-etching techniques for each layer. Diaphragms of the same thickness can be fabricated consisting of deposited layers by silicon bulk etching. HF etches silicon nitride, HNO$_3$+HF does poly -crystalline silicon at room temperature very fast. Whereas ethylenediamice based etchant is used to etch silicon at 11$0^{\circ}C$ slowly.

• YAKHAK HOEJI
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• v.36 no.2
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• pp.188-190
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• 1992

Two clones of monconal antibodies(Co-1 and Co-2) against BSA-benzoylecgonine(BSABE) were produced. Both monoclonal antibodies showed high binding affinity to BSA-BE. Observing from ELISA inhibition assay, Co-1 reacted only weakly with soluble benzoylecgonine, while Co-2 showed considerable reactivity with soluble benzoylecgonine.

• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.55-56
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• 1995

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.492-496
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). In this paper, We investigated dopants(As, Cl) composition rate to improve dark resistivity and transport properties of charge carrier in amorphous selenium using by direct X-ray conversion material. Alloying a-Se with As inhibits the recrystallization of a-Se but introduces undesirable deep hole traps. then doping with Cl(in the ppm range) compensates for the deep hole traps. We investigated their composition rate in various doping conditions and then obtained optimum dopant composition rate. The result was Se-As 0.3%-Cl 30 ppm and X-ray Sensitivity was 0.57 pc/pixel$.$mR at 137 $\mu\textrm{m}$ x 137 $\mu\textrm{m}$ Pixel area.

• Journal of the KSME
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• v.37 no.12
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• pp.47-52
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• 1997

엑사이머 레이저는 Ar, Kr, Xe등의 희귀가스와 F, Cl과 같은 할로겐족 가스를 혼합하여 방전여기에 의해 발진되는 157-350mm 파장대에 자외선 레이저이다. UV레이저를 이용하면 종래의 기계 가공 공정으로 실현할 수 없는 극소형 및 초정밀의 기계구조, 센서 또는 액츄에이터를 비접촉식으로 할 수 있고 가공시 열손상이 거의 없다. 최근 제품의 소형화 및 박막화 추세에 따른 미세가공 기술의 급속한 발전을 살펴보면, Uv레이저를 이용한 실리콘 표면의 도핑(dopping)에 관한 연구, 미소전자 패키징에 레이저를 이용하는 방법뿐만 아니라, 레이저 유도에 의한 금속과 혼합물의 물질전달 현상을 활용한 마이크로 패터닝에 관한 연구도 진행되고 있다. 본 글에서는 여러가지 응용분야 중 레이저 어블레이션, 레이저유도화학에칭, 레이저 PVD등에 대하여 기술한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.217-220
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• 1995

By substituting Cd$\^$2+/ into both A-site and B-site in PNN-PZ-PT ternary perovskite material, it is possible to determine the effects of the substitution site of Cd$\^$2+/ on sintering behavior. Sintering was performed in the temperature range from 1000$^{\circ}C$ to 1300$^{\circ}C$. The substitution site of Cd$\^$2+/ is identified by XPS spectra. Although Cd$\^$2+/ is substituted into both A-site and B-site in PNN-PZ-PT, Cd$\^$2+/ prefers A-site to B-site. The density is influenced by substitution site of Cd$\^$2+/. If Cd$\^$2+/ replaces Pv$\^$2+/, weight gain is observed during sinterig process. On the contrary, if Cd$\^$2+/ replaces Ni$\^$2+/, weight loss is promoted during sintering. From these weight changes, it is believed that Cd$\^$2+/ changes the bonding strength between B-site cation and oxygen of octahedron in perovskite structure. The changes of lattice parameters as a function of Cd$\^$2+/ content were consistent with those of the bonding strength. The densities of A-site-doped compositions were higher than those of B-site-doped composition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.492-496
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). In this paper, We investigated dopants(As, Cl) composition rate to improve dark resistivity and transport properties of charge carrier in amorphous selenium using by direct X-ray conversion material. Alloying a-Se with As inhibits the recrystallization of a-Se but introduces undesirable deep hole traps. then doping with Cl(in the ppm range) compensates for the deep hole traps. We investigated their composition rate in various doping conditions and then obtained optimum dopant composition rate. The result was Se-As 0.3%-c] 30 ppm and X-ray Sensitivity was 0.57 pC/$pixel{\cdot}mR$ at $137{\mu}m{\times}137{\mu}m$ Pixel area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.292-294
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• 1996

Dielectric properties were investigated at Mn doped 0.17($Ba_{0.53}$, $Pb_{0.47}$)0-$0.16Nd_2O_3$-$0.67TiO_2$ system in microwave frequency. It was observed that dielectric constant of 90.1, quality factor of 1320 (at 3.8GHz) and temperature coefficient of resonance frequency 2.3 ppm/$^{\circ}C$ for 0.5wt% Mn doped 0.17($Ba_{0.53}$, $Pb_{0.47}$)0-$0.16Nd_2O_3$-$0.67TiO_2$ system in sintering condition $1290^{\circ}C$/2hr. The quality factor increase due to the compensation effect of Mn ions yp to 0.5wt% and the decrease due to the interface relaxation effect. The temperature coefficient of resonance frequency increases to negative direction with increasing the amounts of Mn.