• Korean Chemical Engineering Research
• /
• 제55권1호
• /
• pp.27-33
• /
• 2017

이황화결합(Disulfide Bond)은 다양한 생리학적 혹은 병리학적 과정 중 단백질번역 후 변형(Post-Translational Modifications) 과정 중에 형성된다. 그러므로 이황화결합에 대한 정보는 단백질의 화학적 구조를 보다 종합적으로 이해하는데 매우 중요한 일이다. 질량분석기를 이용한 이황화결합 분석은 매우 효과적이며, 현재까지 질량 분석기를 활용한 다양한 이황화결합 분석법들이 개발되었다. 그러나, 대부분의 이황화결합 분석법의 경우, 이황화결합 분석 시 자유-시스테인잔기(Free Thiol Residues) 분석을 고려하지 않았다. 본 연구에서는 이황화결합에 관여하는 시스테인/자유-시스테인에 초점을 두고 총 4단계(1단계: 아미노산 서열을 통한 이황화결합 가능 부위를 예측, 2단계: 자유시스테인의 존재 유무의 확인, 3단계: 질량 분석기를 활용한 이황화결합 분석, 4단계: 이황화결합 분석법의 종합적인 검증)의 분석법을 개발하였다. 나아가, 본 연구에서 개발된 분석 기법을 실제 휴먼 유래 재조합 단백질(HRPE1)에 적용함으로써 개발된 이황화결합 분석법의 효용성을 확인하였다. HRPE1의 경우, 총 6개의 이황화결합(Inter-chain 형태: 1, Intra-chain 형태: 5)으로 구성된 것을 최종 확인하였다.

• 한국재료학회지
• /
• 제22권11호
• /
• pp.631-635
• /
• 2012

Nickel oxide was doped with a wide range of concentrations (mol%) of Aluminum (Al) by solvothermal synthesis; single-phased nano powder of nickel oxide was generated after calcination at$900^{\circ}C$. When the concentration of Al dopant was increased, the reduced intensity was confirmed through XRD analysis. Lattice parameters of the synthesized NiO powder were decreased after treatment of the dopant; parameters were increased when the concentration of Al was over the doping limit (5 mol% Al). The binding energy of $Ni^{2+}$ was chemically shifted to $Ni^{3+}$ by doping $Al^{3+}$ ion, as confirmed by the XPS analysis. The tilted structure of the synthesized NiO with 5 mol% Al dopant and the polycrystalline structure of the $Ni_{0.75}Al_{0.25}O$ were observed by HR-TEM analysis. The electrical conductivity of the newly synthesized NiO was highly improved by Al doping in the conductivity test. The electrical conductivity values of the commercial NiO and the synthesized NiO with 5 mol% Al dopant ($Ni_{0.95}Al_{0.05}O$) were 1,400 s/cm and 2,230 s/cm at $750^{\circ}C$, respectively. However, the electrical conductivity of the synthesized NiO with 10 mol% Al dopant ($Ni_{0.9}Al_{0.1}O$) decreased due to the scattering of free-electrons caused by the large number of impurity atoms; the electrical conductivity of $Ni_{0.9}Al_{0.1}O$ was 545 s/cm at $750^{\circ}C$.

• 한국전기전자재료학회논문지
• /
• 제27권9호
• /
• pp.555-560
• /
• 2014

In this paper, in order to develop outstanding Pb-free composition ceramics, the $Fe_2O_3$-doped ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ + 0.3 wt% $Bi_2O_3$ + x wt% $Fe_2O_3$ (x= 0~1.0 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effect of $Fe_2O_3$-doping on their microstructure and electrical properties were investigated. XRD diffraction pattern studies confirm that $Fe_2O_3$ completely diffused into the NKL-NST lattice to form a new stable soild solution with $Fe^{3+}$ entering the $Nb^{5+}$, $Sb^{5+}$ and $Ta^{5+}$ of B-site. And, phase structure of all the ceramics exhibited pure perovskite phase and no secondary phase was found in the ceramics. The ceramics doped with 0.6 wt% $Fe_2O_3$ have the optimum values of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient($k_p$) and mechanical quality factor($Q_m$) : $d_{33}$ = 233 [pC/N], $k_p$= 0.44, $Q_m$= 95. These results indicate that the ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ +0.3 wt% $Bi_2O_3$ + 0.6 wt% $Fe_2O_3$ ceramic is a promising candidate for lead-free piezoelectric ceramics.

• 한국전기전자재료학회논문지
• /
• 제28권11호
• /
• pp.690-693
• /
• 2015

In this paper, in order to develop excellent Pb-free composition ceramics for ultrasonic sensor. The $SnO_2$-doped ($Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3$)(abbreviated as NKL-NST) ceramics have been synthesized using the ordinary solid state reaction method. The effect of $SnO_2$-doping on their dielectric and piezoelectric properties was investigated. The ceramics doped with 0 wt% $SnO_2$ have the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33}.g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=195[pC/N]$, $d_{33}.g_{33}=5.62pm^2/N.kp=0.40$, $density=4.436[g/cm^3]$. suitable for duplex ultrasonic sensor application.

• 한국전기전자재료학회논문지
• /
• 제25권6호
• /
• pp.435-438
• /
• 2012

As lead-free piezoelectric materials, $Ag_2O$ doped $0.95(K_{0.5}Na_{0.5})NbO_3-0.05LiNbO_3+x$ mol% (where x = 0, 0.5, 1, 1.5, 2, 2.5 and 3, respectively) ceramics were fabricated by a conventional sintering process. The doping effects on the microstructure and electrical properties of the $0.95(K_{0.5}Na_{0.5})NbO_3-0.05LiNbO_3$ ceramics were systematically investigated. When the 3 mol % $Ag_2O$ doped $0.95(K_{0.5}Na_{0.5})NbO_3-0.05LiNbO_3$ samples were sintered at $1,080^{\circ}C$ for 5 hrs in air, these ceramics showed excellent values of density=4.20 $g/cm^3$, piezoelectric constant ($d_{33}$)=174 pC/N and phase transition temperature$(T_c)=421.6^{\circ}C$, respectively.

• Transactions on Electrical and Electronic Materials
• /
• 제18권1호
• /
• pp.1-6
• /
• 2017

A comparative study of microwave and conventional sintering of lead-free $Bi_{1/2}(Na_{0.82}K_{0.18})_{1/2}TiO_3-BaZrO_3-CuO$ ceramics is presented. It was found that microwave sintering (MWS) can be successfully applied to the fabrication of large strain Bi-perovskite with electric field-induced strains comparable to those obtained with conventional sintering (CFS). Although MWS resulted in smaller grained microstructures than CFS, the ferroelectric properties were stronger in MWS-derived specimens than in the CFS-derived ones. The piezoelectric strain constant $d_{33}{^*}$ of the CFS-derived specimens reached a maximum value of 372 pm/V after sintering at $1100^{\circ}C$, whereas that of MWS-derived specimens peaked at $950^{\circ}C$ with a $d_{33}{^*}$ value of 324 pm/V.

• Bulletin of the Korean Chemical Society
• /
• 제35권10호
• /
• pp.2917-2921
• /
• 2014

Cerium-activated yttrium aluminate ($Y_3Al_5O_{12}:Ce^{3+}$) exhibiting a garnet structure has been widely utilized in the production of light emitting diodes (LEDs) as a yellow emitting phosphor. The commercialized yttrium aluminum garnet (YAG) phosphor is typically synthesized by a solid-state reaction, which produces irregular shape particles with a size of several tens of micrometers by using the top-down method. To control the shape and size of particles, which had been the primary disadvantage of top-down synthetic methods, we synthesized YAG:Ce nanoparticles with a diameter of 500 nm using a coprecipitation method under the atmospheric pressure without the use of template or special equipment. The precursor particles were formed by refluxing an aqueous solution of the nitrate salts of Y, Al, and Ce, urea, and polyvinylpyrrolidone (55 K) at $100^{\circ}C$ for 12 h. YAG:Ce nanoparticles were formed by the calcination of precursor particles at $1100^{\circ}C$ for 10 h under atmospheric conditions. The phase identification, microstructure, and photoluminescent properties of the products were evaluated by X-ray powder diffraction, scanning electron microscopy, absorption spectrum and photoluminescence analyses.

• The Korean Journal of Ceramics
• /
• 제6권2호
• /
• pp.107-109
• /
• 2000

The crystallization process and the electrical properties of amorphous tin-doped indium oxide (ITO) films have been studied in contrast with those of undoped indium oxide (IO) films. Amorphous ITO and IO films were prepared by magnetron sputtering succeeded by annealing in the air at various temperatures. ITO films showed higher crystallization temperature compared with that of IO films, suggesting an excess free energy caused by the repulsion between the active donors ($Sn^{4+}$). The analysis of the electrical properties alternated with the phased annealing of films provided essential information for understanding the conduction mechanisms of ITO. It was also revealed that the amorphous IO/ITO films showed oxidation around $100^{\circ}C$ in contrast with crystalline IO/ITO films with the oxidation temperature above $200^{\circ}C$.

• Transactions on Electrical and Electronic Materials
• /
• 제9권6호
• /
• pp.227-230
• /
• 2008

Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.342-342
• /
• 2012

Resistance-change Random Access Memory (ReRAM), which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.