• Title/Summary/Keyword: doping material

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Physicochemical Properties and Antioxidative Activities of Omija(Schizandra chinensis Bailon) (오미자의 이화학적 특성 및 항산화 활성)

  • kim, Jwa-Suk;Choi, Sun-Young
    • The Korean Journal of Food And Nutrition
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    • v.21 no.1
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    • pp.35-42
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    • 2008
  • To develop physiological functionality of Omija extracted with water was evaluated on antioxidative activity. Omija, high acid material with pH 3.6, contain $57.5{\pm}1.03%$ of moisture, and $18.8{\pm}0.12%$ of crude fat. This material have $12.6{\pm}0.04%$ of carbohydrate and $11.1{\pm}0.07%$ of crude protein as well, but ash and crude protein contents were found less than 10%. 10 mineral contents were also found, too; K and Ca showed the highest level, then Al, Mg, Na and Mn were followed. In composition amino acid contents, glutamic acid took the largest portion, $131.7{\pm}1.3$ mg/100 g, aspartic acid $51.5{\pm}0.6%$, and other composition amino acid under 50%. In case of free sugar contents, 7 types were found. Most of them were glucose and fructose. Total phenolic compounds showed the highest level, $2,862.6{\pm}31.7$ mg/100 g. $197.8{\pm}14.6$ mg/100 g of flavonoid and $225.6{\pm}18.2$ mg/100 g were included. In terms of electron donating ability, radical scavenging ability activated as the amount of Omija extract increased. In particular, Omija extract in 1,000 ${\mu}g/m{\ell}$ demonstrated almost similar electron donating ability, $72.4{\pm}0.21%$, to BHT. It was also found that antioxidant activities of electron donating ability, SOD-like ability, hydroxyl radical scavenging ability and nitrite scavenging ability were highly promoted as Omija extract concentration increased. The nitrite scavenging ability was significant when the extract belonged to strong acid region and doping concentrations increased.

Piezoelectric and Dielectric Properties of (Na,K,Li)(Nb,Sb,Ta)O3 Ceramics as a Function of Fe2O3 Addition (Fe2O3첨가에 따른 (Na,K,Li)(Nb,Sb,Ta)O3계 세라믹스의 압전 및 유전 특성)

  • Lee, Gwang-Min;Shin, Sang-Hoon;Yoo, Ju-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.9
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    • pp.555-560
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    • 2014
  • In this paper, in order to develop outstanding Pb-free composition ceramics, the $Fe_2O_3$-doped ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ + 0.3 wt% $Bi_2O_3$ + x wt% $Fe_2O_3$ (x= 0~1.0 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effect of $Fe_2O_3$-doping on their microstructure and electrical properties were investigated. XRD diffraction pattern studies confirm that $Fe_2O_3$ completely diffused into the NKL-NST lattice to form a new stable soild solution with $Fe^{3+}$ entering the $Nb^{5+}$, $Sb^{5+}$ and $Ta^{5+}$ of B-site. And, phase structure of all the ceramics exhibited pure perovskite phase and no secondary phase was found in the ceramics. The ceramics doped with 0.6 wt% $Fe_2O_3$ have the optimum values of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient($k_p$) and mechanical quality factor($Q_m$) : $d_{33}$ = 233 [pC/N], $k_p$= 0.44, $Q_m$= 95. These results indicate that the ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ +0.3 wt% $Bi_2O_3$ + 0.6 wt% $Fe_2O_3$ ceramic is a promising candidate for lead-free piezoelectric ceramics.

Enhancement of Electrical Properties of Organic Light-Emitting Diodes Using F4-TCNQ Molecule as a Hole-Transport Layer (F4-TCNQ 분자를 정공 수송층에 이용한 유기 발광 소자의 전기적 특성 향상)

  • Na, Su Hwan;Lee, Won Jae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.11
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    • pp.717-721
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    • 2017
  • We studied the performance enhancement of organic light-emitting diodes (OLEDs) using 2,3,5,6-fluoro-7,7,8,8-tetracyanoquinodimethane ($F_4-TCNQ$) as the hole-transport layer. To investigate how $F_4-TCNQ$ affects the device performance, we fabricated a reference device in an ITO (170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm) structure. Several types of test devices were manufactured by either doping the $F_4-TCNQ$ in the TPD layer or forming a separate $F_4-TCNQ$ layer between the ITO anode and TPD layer. N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD), tri(8-hydroxyquinoline) aluminum ($Alq_3$), and $F_4-TCNQ$ layers were formed by thermal evaporation at a pressure of $10_{-6}$ torr. The deposition rate was $1.0-1.5{\AA}/s$ for TPD and $Alq_3$. The LiF was subsequently thermally evaporated at a deposition rate of $0.2{\AA}/s$. The performance of the OLEDs was considered with respect to the turn-on voltage, luminance, and current efficiency. It was found that the use of $F_4-TCNQ$ in OLEDs enhances the performance of the device. In particular, the use of a separate layer of $F_4-TCNQ$ realizes better device performance than other types of OLEDs.

Effect of LaFeO3 Doping on the Ferroelectric and Piezoelectric Properties of Bi0.5(Na0.78K0.22)0.5TiO3 Lead-Free Piezoceramics (LaFeO3 함량에 따른 (1-x)Bi0.5(Na0.78K0.22)0.5TiO3-xLaFeO3의 강유전, 압전 특성)

  • Park, Chun-Kil;Lim, Ji-Ho;Park, Jung-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.3
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    • pp.157-161
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    • 2017
  • $(1-x)Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3-xLaFeO_3$ ceramics were fabricated using a solid state reaction method. The microstructural, ferroelectric and piezoelectric properties were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM), and polarization hysteresis loops (P-E). XRD results indicated that BNKT ceramic crystal structure modified by $LaFeO_3$ was transformed from a ferroelectric tetragonal to a non-polar pesudo-cubic phase with increased $LaFeO_3$ content. The improved piezoelectric properties resulted from the addition of $LaFeO_3$ up to 3 mol%. The $LaFeO_3$ 3mol% sample showed markedly improved piezoelectric and strain behaviors in comparison with pure BNKT ceramic.

Effects of Nb2O5 Addition on Microstructure and Piezoelectric Characteristics of PNW-PMN-PZT Ceramics for Piezoelectric Transformer Driving PDA CCFL (PDA CCFL 구동을 위한 압전트랜스포머 용 PNW-PMN-PZT 세라믹스의 Nb2O5 첨가에 따른 미세구조 및 압전특성)

  • 류주현;황락훈;김철희;오동언;장은성;정영호;홍재일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.3
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    • pp.289-293
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    • 2004
  • PNW-PMN-PZT ceramics were fabricated with the variations of Nb$_2$O$_{5}$ addition and their microstructural and piezoelectric characteristics were investigated. When the amount of Nb$_2$O$_{5}$ increased, grain size decreased gradually. At 0.3wt% Nb$_2$O$_{5}$ which is the same weight percent with Fe$_2$O$_3$, maximum tetragonality(c/a) and density were shown due to the complexed doping effects. Also, this composition that showed Qm of 2,041, kp of 0.55, grain size of 2.5${\mu}{\textrm}{m}$ and $\varepsilon$r of 1704 were proper for high power application. Using this composition, Rosen-type piezoelectric transformer was fabricated as the size of 1 ${\times}$ 16 ${\times}$ 5㎣ and its electrical characteristics were investigated with the variations of load resistance and driving frequency. At the resistance of 200㏀, maximum step-up ratio of 13.68 was shown. After driving PDA CCFL for 25 min using the inverter circuit, at driving frequency of 214.4KHz, input voltage of 31.78 V and input current of 21.1mA were measured at the input part of piezoelectric transformer. And then, output voltage of 293.2 V and output current of 2.2mA were shown at the output part of piezoelectric transformer. At the same time, efficiency of 96.2% and temperature rise of 3.5$^{\circ}C$ were appeared at the piezoelectric transformer.ormer.

Microstructure and Electrical Properties of $Pr_6O_{11}$-Based ZnO Varistor Ceramics Doped With $Tb_4O_7$ ($Tb_4O_7$이 첨가된 $Pr_6O_{11}$계 ZnO 바리스터 세라믹스의 미세구조 및 전기적 특성)

  • Lee, Hong-Hee;Kim, Myung-Jun;Park, Jong-Ah;Nahm, Choon-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.705-709
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    • 2003
  • The microstructure and electrical properties of the $Pr_6O_{11}$-based ZnO varistor ceramics, which are composed of Zn-Pr-Co-Cr-Tb oxides, were investigated with $Tb_4O_7$ amount. The varistor ceramics exhibited very high densification based on increasing density in the range of $5.73{\sim}5.85g/cm^3$ as $Tb_4O_7$ amount is increased. The calculated nonlinear exponent( ${\alpha}$ ) in varistor ceramics without $Tb_4O_7$ was only 8.9, whereas the ${\alpha}$ value of the varistor ceramics with $Tb_4O_7$ was abruptly increased in the range of 18.6 to 42.0. In particular, the maximum value(42.0) of ${\alpha}$ was obtained by doping of 1.0 mol% $Tb_4O_7$. The measured leakage current($I_{\ell}$) in varistor ceramics without $Tb_4O_7$ was $40.1{\mu}A$, whereas the $I{\ell}$ value of the varistors with $Tb_4O_7$ was very abruptly decreased below $5{\mu}A$. It is estimated that $Tb_4O_7$ additives will is applied usefully in development of varistors possessing high performance.

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Improvement of efficiency and brightness by insertion of the novel layer in OLEDs (새로운 층을 삽입한 고효율 고발광의 OLEDs 제작 및 그 특성)

  • Kim, Young-Min;Lee, Joo-Won;Park, Jung-Su;Bae, Sung-Jin;Paek, Kyeong-Kap;Jang, Jin;Sung, Man-Young;Ju, Byeong-Kwon;Kim, Jai-Kyeong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.108-111
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    • 2004
  • An efficiency and brightness of the Organic Light-emitting Diodes(OLEDs) by insertion of the novel layer between a singlet emitter and an electron transporting layer without doping processes, has been improved. The novel layers named as the K-M1 and K-M2 layers have shown the excellent improvement in the carrier balance and recombination efficiency. New devices using the K-M1 and K-M2 layers have shown a high efficiencies of over 15cd/A and 61m/W$(at\;20mA/cm^2)$, and brightness of over $16,000cd/m^2(at\;100mA/cm^2)$, respectively.

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Spectro-electrochemical Analyses of Immobilization of Glucose Oxidase (Glucose Oxidase 고정화에 대한 전기화학적/광학적 분석)

  • Kim, Hyun-Cheol;Cho, Young-Jai;Gu, Hal-Bon;SaGon, Geon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.316-319
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    • 2000
  • In the case of immobilizing of glucose oxidase into polypyrrole (PPy) using electrosynthesis, the glucose oxidase (GOx) forms a coordinate bond with the polymer's backbone. However, because of intrinsic insulation and net-chain of the enzyme, the charge transfer and mass transport are obstructed during the film growth. Therefore, the film growth is dull. We synthesized the enzyme electrode by electropolymerization added some organic solvent, A formative seeds of film growth is delayed by adding the solvent. The delay is induced by radical transfer between the solvent and pyrrole monomer. In the case of adding ethanol, the radical transfer shares the contribution of dopant between electrolyte anion and GOx polyanion. This may lead to increase amount of immobilized the enzyme in ppy. However, adding tetrahydrofuran (THF), the radical transfer is more brisk, resulting in short chained polymer. Therefore, the doping level is lowered and then amount of immobilized of enzyme is decreased. For the UV absorption spectra of synthetic solution before synthesis and after, in the case of ethanol added, the optical density was slightly decreased for the GOx peaks. It suggests amount of GOx in the solution was decreased and amount of GOx in the film was increased. We established qualitatively that amount of immobilization can be improved by adding a little ethanol in the synthetic solution. It is due to radical transfer reaction. The radical transfer shares the contribution of dopant between small and fast electrolyte anion and big and slow GOx polyanion.

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The Piezoelectric Properties of (Na0.5K0.5)NbO3-K4CuNb8O23 Ceramics with Various K4CuNb8O23 Doping and Sintering Temperatures

  • Yoon, Jung-Rag;Lee, Chang-Bae;Lee, Kyung-Min;Lee, Heun-Young;Lee, Serk-Won
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.3
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    • pp.126-129
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    • 2010
  • (1-X) $(Na_{0.5}K_{0.5})NbO_3-X$ $K_4CuNb_8O_{23}$ (NKN-X KCN) ceramics were produced using the conventional solid state sintering method, and their sinterability and electric properties were investigated. The density, dielectric constant (${\varepsilon}_r$), piezoelectric constant $d_{33}$, electromechanical coupling factor $k_p$ and mechanical quality factor $Q_m$ value of the NKN ceramics depended upon the KCN content and the sintering temperature. In particular, the KCN addition to the NKN greatly improved the mechanical quality factor $Q_m$ value. The ceramic with X = 2.0 mol% sintered at $1,150^{\circ}C$ possesses the optimum properties (${\varepsilon}_r=241$, $d_{33}=78$, $k_p=0.34$ and $Q_m=1,121$). These results indicate that the ceramic is a promising candidate material for applications in lead free piezoelectric transformer and filter materials.

Electrical Properties of ZnO-Bi2O3-Co3O4 Varistor (ZnO-Bi2O3-Co3O4 바리스터의 전기적 특성)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.11
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    • pp.882-889
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    • 2011
  • In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.